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Morphology Control and Electroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution
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文摘
We report on the morphology control and electroluminescence of well-aligned ZnO nanorod/p-GaN heterojunctions prepared by an aqueous solution route at low temperature (90 °C). We found that the density and size of the grown nanorods and microrods depended significantly on the ZnO seed density. Synchrotron X-ray scattering measurements showed an epitaxial relationship between the ZnO nanorods and the p-GaN thin film. ZnO nanorod/p-GaN heterojunction light-emitting diodes (LEDs) with an individual chip size of 300 × 300 μm2 were fabricated. Room-temperature electroluminescence spectra in the visible range were obtained from the LED at forward bias voltage. This result indicates that such heterojunction LEDs fabricated from solution are a promising approach for realizing large-area light-emitting sources that have high external quantum efficiency.

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