Impact of geometry changes in the channel pore by the gating movements on the channel’s conductance

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• 作者：Agata Wawrzkiewicz-Jałowiecka ; ^{agata.wawrzkiewicz-jalowiecka@polsl.pl} ; ^{agata.wawrzkiewicz@gmail.com} ; Przemysław Borys ; Zbigniew J. Grzywna
• 关键词：Geometric modelling ; Kv 1.2 channels ; Voltage activation ; Channel subdomains' movement ; Channel pore geometry
• 刊名：Biochimica et Biophysica Acta (BBA) - Biomembranes
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：1859
• 期：3
• 页码：446-458
• 全文大小：1422 K
• 卷排序：1859

文摘

The role of ohmic conductance in ion permeation through the channel is evaluated. The channel's segments reorientation is evaluated during gating. The best model for S4 reorientation under applied voltage is made. Fluctuations are the only option to explain the effective channel's conductance.