超细间距引线键合工艺的试验研究
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摘要
随着市场和技术的发展,芯片功能不断增强,引线越来越多,而体积却越来越小,导致焊盘(pad)在整个芯片中所占的面积比不断上升,因此,研究超细间距(ultra-Fine -pitch)键合技术是解决芯片小型化必须解决的一个关键技术。引线键合是芯片制造后道工艺中的主要工序,直接影响着集成电路和器件的可靠性和成本。目前我国的引线键合设备和相关技术还依赖进口,成为制约微电子制造业发展的瓶颈。研究开发具有自主知识产权的键合技术有利于我国一些传统制造企业转型,对打破国外的技术垄断,推动我国相关产业的技术进步具有十分重要的意义。
本文从微电子制造业的IC 封装相关技术入手,介绍了微电子封装的产生、地位和作用,阐述了微电子封装的主要形式、基本功能和层次,不同封装工艺的优缺点,并对当前封装技术的特点和发展趋势进行了分析。本文对核心引线键合相关技术做了详细的阐述、分析。介绍了芯片焊接设备、引线键合主要工艺过程和发展趋势,为超细间距引线键合的试验分析和研究打下基础。
超细间距引线键合将部分参数推向其物理极限值,要求更小直径的金球(free air ball)和键合球(bonded ball),所采用的金线直径更小。试验选取K&S 8028S 型、1484XQ型引线键合机和与45 所联合开发的WB-950 引线键合机为试验平台,观测和测量设备分别选取了XTL-1 型彩色电视体显微镜和Buchler 1500-6400 测量仪。文中对影响引线键合的相关因素进行了深入的分析,并找出最佳可行试验方案,为正式试验研究做好了充分的准备。
正式试验选用正交试验法作为本次试验研究的设计依据。利用数理统计学观点,应用正交性原理,从大量的试验中挑选适量的具有代表性、典型性的试验点,根据“正交表”来合理安排试验,同时运用极差分析法、方差分析法和趋势图对试验结果进行分析。通过对线尾、金球、键合球、键合质量的诸多影响因素的广泛工艺试验,最终总结出满足60μm 超细间距引线键合关键参数的影响规律。
通过对影响超细间距引线键合关键技术的各种主要因素的广泛试验研究,为下一阶段深入研究微细间距引线键合的影响机理和规律打下了基础。
With the development of market and technology, the function of the chip is being strengthened constantly, the number of the lead wire is getting more and more, and the size of the chip is becoming smaller and smaller. These factors cause pad-to-chip ratio rising constantly. So it is a key technology which must be solved in chip miniaturization to study the ultra-fine-pitch wire bonding technology. Wire bonding is the central back end process, and it influences the reliability and the cost of integrated circuit and device directly. At present wire bonding equipment and relevant technology are relyed on import in our country, which become bottleneck restraining development of microelectronics manufacturing industry. Researching and developping the wire bonding technology with independent intellectual property right benefit the transition of some traditional manufacturing companies in our country. It has very great meanings for breaking the monopolization of foreign technology, promoting the technological progress of the relevant industry of our country.
Started with the relevant technology of IC interconnection of the microelectronic manufacturing industry, this chaper has introduced the production, role and function of microelectronic interconnection. It has explained the main form, basic function and level of microelectronic interconnection, the advantages and disadvantages of different IC interconnection, and analyzed the characteristic of the interconnection technology and development trend of the interconnection technology at present. This paper has intensively analysed about the relevant technology of the wire bonding, recommended the weld equipment of the chip, the main process of wire bonding and the development trend, which have provided the foundation for test analyse and study of ultra-fine-pitch wire bonding.
Ultra-fine-pitch wire bonding may make some parameters to their physics extreme, require the free air ball and bonded ball of smaller diameter and the diameter of gold line adopted. The wire bonder of Model K&S 8028S, 1484XQ and that of WB-950 unit cooperated with No. 45 Research Institute are choosed as experimental platform. And XTL-1 type color TV microscope and Buchler 1500-6400 measuring apparatuses are choosed as measurement apparatuses. After deeply analyzing the relevant factors which affect wire bonding and find out the best feasible testing program, abundant preparation are made for
next formal experiment. The orthogonal text methods are selected as the basis of this experimental study .Utilizing the mathematical statistics view, using the orthogonal principle, and selecting the right amount test with representativeness, the test has been arranged according to " orthogonal text forms " rationally from a large number of tests. Using extremely bad analytic approach, the analytic approach of variance and trend figure are used to analyze the result of the test at the same time. Through analyzing of the factors influencing the wire end, free air ball, bonded ball, bonding quality, the test has found the influence rule which satisfies 60um ultra-fine-pitch wire bonding. Through abroad test and study of all kinds of main factors which affect the ultra-fine-pitch wire bonding technology, the tests have laid foundation for further investigating influence mechanism of very small pitch wire bonding and law for the next stage.
本文从微电子制造业的IC 封装相关技术入手,介绍了微电子封装的产生、地位和作用,阐述了微电子封装的主要形式、基本功能和层次,不同封装工艺的优缺点,并对当前封装技术的特点和发展趋势进行了分析。本文对核心引线键合相关技术做了详细的阐述、分析。介绍了芯片焊接设备、引线键合主要工艺过程和发展趋势,为超细间距引线键合的试验分析和研究打下基础。
超细间距引线键合将部分参数推向其物理极限值,要求更小直径的金球(free air ball)和键合球(bonded ball),所采用的金线直径更小。试验选取K&S 8028S 型、1484XQ型引线键合机和与45 所联合开发的WB-950 引线键合机为试验平台,观测和测量设备分别选取了XTL-1 型彩色电视体显微镜和Buchler 1500-6400 测量仪。文中对影响引线键合的相关因素进行了深入的分析,并找出最佳可行试验方案,为正式试验研究做好了充分的准备。
正式试验选用正交试验法作为本次试验研究的设计依据。利用数理统计学观点,应用正交性原理,从大量的试验中挑选适量的具有代表性、典型性的试验点,根据“正交表”来合理安排试验,同时运用极差分析法、方差分析法和趋势图对试验结果进行分析。通过对线尾、金球、键合球、键合质量的诸多影响因素的广泛工艺试验,最终总结出满足60μm 超细间距引线键合关键参数的影响规律。
通过对影响超细间距引线键合关键技术的各种主要因素的广泛试验研究,为下一阶段深入研究微细间距引线键合的影响机理和规律打下了基础。
With the development of market and technology, the function of the chip is being strengthened constantly, the number of the lead wire is getting more and more, and the size of the chip is becoming smaller and smaller. These factors cause pad-to-chip ratio rising constantly. So it is a key technology which must be solved in chip miniaturization to study the ultra-fine-pitch wire bonding technology. Wire bonding is the central back end process, and it influences the reliability and the cost of integrated circuit and device directly. At present wire bonding equipment and relevant technology are relyed on import in our country, which become bottleneck restraining development of microelectronics manufacturing industry. Researching and developping the wire bonding technology with independent intellectual property right benefit the transition of some traditional manufacturing companies in our country. It has very great meanings for breaking the monopolization of foreign technology, promoting the technological progress of the relevant industry of our country.
Started with the relevant technology of IC interconnection of the microelectronic manufacturing industry, this chaper has introduced the production, role and function of microelectronic interconnection. It has explained the main form, basic function and level of microelectronic interconnection, the advantages and disadvantages of different IC interconnection, and analyzed the characteristic of the interconnection technology and development trend of the interconnection technology at present. This paper has intensively analysed about the relevant technology of the wire bonding, recommended the weld equipment of the chip, the main process of wire bonding and the development trend, which have provided the foundation for test analyse and study of ultra-fine-pitch wire bonding.
Ultra-fine-pitch wire bonding may make some parameters to their physics extreme, require the free air ball and bonded ball of smaller diameter and the diameter of gold line adopted. The wire bonder of Model K&S 8028S, 1484XQ and that of WB-950 unit cooperated with No. 45 Research Institute are choosed as experimental platform. And XTL-1 type color TV microscope and Buchler 1500-6400 measuring apparatuses are choosed as measurement apparatuses. After deeply analyzing the relevant factors which affect wire bonding and find out the best feasible testing program, abundant preparation are made for
next formal experiment. The orthogonal text methods are selected as the basis of this experimental study .Utilizing the mathematical statistics view, using the orthogonal principle, and selecting the right amount test with representativeness, the test has been arranged according to " orthogonal text forms " rationally from a large number of tests. Using extremely bad analytic approach, the analytic approach of variance and trend figure are used to analyze the result of the test at the same time. Through analyzing of the factors influencing the wire end, free air ball, bonded ball, bonding quality, the test has found the influence rule which satisfies 60um ultra-fine-pitch wire bonding. Through abroad test and study of all kinds of main factors which affect the ultra-fine-pitch wire bonding technology, the tests have laid foundation for further investigating influence mechanism of very small pitch wire bonding and law for the next stage.
引文
[1] 张世恩等,我国半导体设备现状及发展建议,电子工业专用设备1998.1 :1～8
[2] Catching up to Flip Chip Technology,Connections Magazine, Vol. 1, 2001, Page 36.
[3] 葛励冲,微电子封装中芯片焊接技术及其设备的发展,电子工业专用设备2000.12 : 5～10
[4] 贾松良,微电子封装业和微电子封装设备,电子工业专用设备2003.5 :7～11
[5] 贾松良,微电子封装业在我国的发展,世界电子元器件2001.11 :46～47
[6] Jiromaru Tsujino, Hiroyuki Yoshihara, Tsutomu Sano, Shigeru Ihara, High frequency ultrasonic wire bonding systems, Ultrasonics, Vol.38, 2000:pp 77～80
[7] Y.M.Cheung, S.W.Or, Stephen Ching, Low Temperature Gold Wire Bonding, 1999 IEEE/CPMT Int’l Electronics Manufacturing Technology Symposium, pp 196～202
[8] S.W. Or, H.L.W.Chan, V.C.Lo, C.W.Yuen, Dynamics of an Ultrasonic Transducer Used for Wire Bonding, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol 45 No.6, 1998:pp 1453～1460
[9] Jiromaru Tsujino, Tetsugi UEOKA, Ichiro WATANABE, Yusuke KIMURA, New Methods of Ultrasonic Metal Welding, IEEE Ultrasonics Symposium, 1993:pp 405～410
[10] Gabriel Achanzer, Trends in Ultrasonics for Wire Bonding, http://www.fabtech.org/features/tap/articles/02.305.html
[11] Sung-Jac Hong, The Behavior of FAB(Free Air Ball) and HAZ(Heat Affected Zone) in Fine Gold Wire,2001 Int’l Symposium on Electronic Materials and Packaging, 52～55
[12] Jau-Liang Chen, A New Approach in Free Air Ball Formation Process Parameters Analysis, IEEE TRANSACTIONS ON PACKAGING MANUFACTURING, VOL. 23, NO. 2, 2000:pp 116～122
[13] R.Osorio, Simulation procedure to improve piezoresistive microsensors used for monitoring ball bonding , Sensors and Actuators A 92 ,2001, 299～304
[14] Mark K. Klossner, An Integrated Approach To Solving sub-45μm Wire Bond Process Challenges, Semicon Singapore 2001
[15] Ivy Qin, Wedge Bonding for Ultra-fine Pitch Applications, Semicon Singapore 2001
[16] R. Pufall, Automatic Process Control of Wire Bonding, Proc. 43th Electronic Components and Technology Conference 1993: 159～162
[17] John Ditri,Real time ultrasonic bond quality monitoring ,SMEICON Singapore 2002
[18] G.E.Servais,Wire Bonding-A Closer Look ,The 17th International Symposium for Testing & Failure Analysis,Los Angeles,California,USA,November,1991,11～15
[19] Jiju Antony ,Improving the wire bonding process quality using statisticallydesigned experiments , Microelectronics Journal 30 (1999) :161～168
[20] Z.N.Liang,A concept to relate wire bonding parameters to bondability and ball bond reliability , Microelectronics Reliability 38(1998):1287～1291
[21] Zonghe Lai,Effect of the microstructure of Ni/Au metrallization on bondability of FR-4 substrate ,The Swedish Institute of Production Engineering Research(IVF) S-431 53 Molndal,Sweden
[22] 高尚通等,现代电子封装技术,半导体情报1998.4 pp9～13
[23] 李枚,微电子封装技术的发展与展望,半导体杂志2000.6 pp32～36
[24] 田民波等,电子封装技术和封装材料,半导体情报1995.8 pp42～61
[25] 谢恩桓,新世纪IC封装的回顾和发展趋势展望,电子与封装2003.7 pp1～5
[26] 鲜飞,微电子封装技术的发展趋势,信息技术与标准化2004.6 pp21～24
[27] 李书军等,TAB封装工艺简介,微处理机1995.5 pp43～45
[28] 孟庆浩等,载带自动键合(TAB)引线技术,半导体杂志1997.12 pp32～39
[29] 张钦哉等,倒装片及其封装技术的现状和趋向,电子与自动化2001.1 pp12～13
[30] 李福泉等,倒装芯片凸点制作方法,电子工艺技术2003.3 pp62～66
[31] MaxumPLU超高速金球焊接机http://www.knschina.com/Datasheets/MaxumPlus.pdf
[32] 李俊哲,细间距封装技术发展与应用探讨电子产品世界2003.2 :63～65
[33] Catching up to Flip Chip Technology ,Connections Magazine, 2001, Vol.1:36
[34] 王晓光等,中国集成电路大全集成电路封装1993年5月第一版
[35] 马玉华等,对影响内引线键合可靠性的因素的分析与对策,半导体情报1999.10 pp53～56
[36] 邴守东.DB-6120全自动芯片键合机图像处理系统分析及软件处理. 电子工业专用设备2003(5)
[37] 韩为民.键合机三维工作台控制系统的设计. 电子工业专用设备2003(5)
[38] 拓扑选. 全自动引线键合机上的图像视觉系统. 电子工业专用设备2001(9)
[39] Maintenance and Hand Book of Model 1484XQ Automatic Wire Bonder
[40] 夏奇等,高精度自动贴片机视觉对准系统及其图像处理,光学技术2004.3:146～149
[41] Lee Levine,Choosing capillaries for fine pitch bonding ,the international magazine for semiconductor manufacturing
[42] Avishai Shklar ,Developing a Capillary for 50-μm Pad Pitch,Advancedbonding : 32~33
[43] 邱睿等. 高密度球键合质量的影响因素和解决方法. 电子封装技术2003(12)
[44] 中华人民共和国军用标准GJB548A-96,微电子器件试验方法和程序,北京,国防科工委军标出版社,1997
[45] George G Harman ,The Microelectronic Wire Bond Pull Test-How to use It, How to Abuse It IEEE Transactions on components,hybrids,and manufacturing technology 1978 : 203~210
[46] 黄强等. 双键合点破坏性引线键合拉力试验的测量误差分析. 电子与封装2003(9) pp13～16
[47] 杨瑞,浅谈正交试验法在生产实际中的应用,郑州煤炭管理干部学院学报2000.5:72～74
[48] 周康民,正交试验在实验设计中的应用江苏地质, 1998 22 (4) :213—215
[49] 郭峰等,应用正交试验确定脱氢最佳工艺条件,辽宁工学院学报1998.12:6～8
[50] Y.M.Cheung,Low Temperature Gold Wire Bonding ,IEEE International Electrics Manufacturing Technology Symposium 1999: 196～202
[51] Lorenzo Parrini ,Design of Advanced US Transducer for Welding Devices ,IEEE Transactions on Ultrasonics,Ferroelectrics,and Frequency Control ,2001 11 vol 48 no 6
[52] Michael Mayer, Oliver Paul1, Daniel Bolliger2 and Henry Baltes , In-Situ Calibration Of Wire Bonder Ultrasonic System Using Integrated Microsensor ,1998 IEEE/CPMT Electronics Packaging Technology Conference :219～223
[53] 谢敬华等,提高引线键合机超声系统性能的若干因素的分析,现代电子技术,2003,2 :65～67
[54] Howard R.Test ,Capillary Designs and Process for Fine Pitch Ball Bonding Patent Number 5,544,804
[55] Benjamin N.Eldridge ,Method and Apparatus for Wirebonding,for Severing Bond Wires,and for Forming Balls on The Ends of Bond Wires ,Patent Number 5,601,740
[2] Catching up to Flip Chip Technology,Connections Magazine, Vol. 1, 2001, Page 36.
[3] 葛励冲,微电子封装中芯片焊接技术及其设备的发展,电子工业专用设备2000.12 : 5～10
[4] 贾松良,微电子封装业和微电子封装设备,电子工业专用设备2003.5 :7～11
[5] 贾松良,微电子封装业在我国的发展,世界电子元器件2001.11 :46～47
[6] Jiromaru Tsujino, Hiroyuki Yoshihara, Tsutomu Sano, Shigeru Ihara, High frequency ultrasonic wire bonding systems, Ultrasonics, Vol.38, 2000:pp 77～80
[7] Y.M.Cheung, S.W.Or, Stephen Ching, Low Temperature Gold Wire Bonding, 1999 IEEE/CPMT Int’l Electronics Manufacturing Technology Symposium, pp 196～202
[8] S.W. Or, H.L.W.Chan, V.C.Lo, C.W.Yuen, Dynamics of an Ultrasonic Transducer Used for Wire Bonding, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol 45 No.6, 1998:pp 1453～1460
[9] Jiromaru Tsujino, Tetsugi UEOKA, Ichiro WATANABE, Yusuke KIMURA, New Methods of Ultrasonic Metal Welding, IEEE Ultrasonics Symposium, 1993:pp 405～410
[10] Gabriel Achanzer, Trends in Ultrasonics for Wire Bonding, http://www.fabtech.org/features/tap/articles/02.305.html
[11] Sung-Jac Hong, The Behavior of FAB(Free Air Ball) and HAZ(Heat Affected Zone) in Fine Gold Wire,2001 Int’l Symposium on Electronic Materials and Packaging, 52～55
[12] Jau-Liang Chen, A New Approach in Free Air Ball Formation Process Parameters Analysis, IEEE TRANSACTIONS ON PACKAGING MANUFACTURING, VOL. 23, NO. 2, 2000:pp 116～122
[13] R.Osorio, Simulation procedure to improve piezoresistive microsensors used for monitoring ball bonding , Sensors and Actuators A 92 ,2001, 299～304
[14] Mark K. Klossner, An Integrated Approach To Solving sub-45μm Wire Bond Process Challenges, Semicon Singapore 2001
[15] Ivy Qin, Wedge Bonding for Ultra-fine Pitch Applications, Semicon Singapore 2001
[16] R. Pufall, Automatic Process Control of Wire Bonding, Proc. 43th Electronic Components and Technology Conference 1993: 159～162
[17] John Ditri,Real time ultrasonic bond quality monitoring ,SMEICON Singapore 2002
[18] G.E.Servais,Wire Bonding-A Closer Look ,The 17th International Symposium for Testing & Failure Analysis,Los Angeles,California,USA,November,1991,11～15
[19] Jiju Antony ,Improving the wire bonding process quality using statisticallydesigned experiments , Microelectronics Journal 30 (1999) :161～168
[20] Z.N.Liang,A concept to relate wire bonding parameters to bondability and ball bond reliability , Microelectronics Reliability 38(1998):1287～1291
[21] Zonghe Lai,Effect of the microstructure of Ni/Au metrallization on bondability of FR-4 substrate ,The Swedish Institute of Production Engineering Research(IVF) S-431 53 Molndal,Sweden
[22] 高尚通等,现代电子封装技术,半导体情报1998.4 pp9～13
[23] 李枚,微电子封装技术的发展与展望,半导体杂志2000.6 pp32～36
[24] 田民波等,电子封装技术和封装材料,半导体情报1995.8 pp42～61
[25] 谢恩桓,新世纪IC封装的回顾和发展趋势展望,电子与封装2003.7 pp1～5
[26] 鲜飞,微电子封装技术的发展趋势,信息技术与标准化2004.6 pp21～24
[27] 李书军等,TAB封装工艺简介,微处理机1995.5 pp43～45
[28] 孟庆浩等,载带自动键合(TAB)引线技术,半导体杂志1997.12 pp32～39
[29] 张钦哉等,倒装片及其封装技术的现状和趋向,电子与自动化2001.1 pp12～13
[30] 李福泉等,倒装芯片凸点制作方法,电子工艺技术2003.3 pp62～66
[31] MaxumPLU超高速金球焊接机http://www.knschina.com/Datasheets/MaxumPlus.pdf
[32] 李俊哲,细间距封装技术发展与应用探讨电子产品世界2003.2 :63～65
[33] Catching up to Flip Chip Technology ,Connections Magazine, 2001, Vol.1:36
[34] 王晓光等,中国集成电路大全集成电路封装1993年5月第一版
[35] 马玉华等,对影响内引线键合可靠性的因素的分析与对策,半导体情报1999.10 pp53～56
[36] 邴守东.DB-6120全自动芯片键合机图像处理系统分析及软件处理. 电子工业专用设备2003(5)
[37] 韩为民.键合机三维工作台控制系统的设计. 电子工业专用设备2003(5)
[38] 拓扑选. 全自动引线键合机上的图像视觉系统. 电子工业专用设备2001(9)
[39] Maintenance and Hand Book of Model 1484XQ Automatic Wire Bonder
[40] 夏奇等,高精度自动贴片机视觉对准系统及其图像处理,光学技术2004.3:146～149
[41] Lee Levine,Choosing capillaries for fine pitch bonding ,the international magazine for semiconductor manufacturing
[42] Avishai Shklar ,Developing a Capillary for 50-μm Pad Pitch,Advancedbonding : 32~33
[43] 邱睿等. 高密度球键合质量的影响因素和解决方法. 电子封装技术2003(12)
[44] 中华人民共和国军用标准GJB548A-96,微电子器件试验方法和程序,北京,国防科工委军标出版社,1997
[45] George G Harman ,The Microelectronic Wire Bond Pull Test-How to use It, How to Abuse It IEEE Transactions on components,hybrids,and manufacturing technology 1978 : 203~210
[46] 黄强等. 双键合点破坏性引线键合拉力试验的测量误差分析. 电子与封装2003(9) pp13～16
[47] 杨瑞,浅谈正交试验法在生产实际中的应用,郑州煤炭管理干部学院学报2000.5:72～74
[48] 周康民,正交试验在实验设计中的应用江苏地质, 1998 22 (4) :213—215
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