光集成中等离子诱导与无杂质空位量子阱混杂技术的研究
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摘要
半导体光集成技术能在同一基片上实现具有多种带隙的有源器件和无源器件的组合,这使其在器件集成占有非常重要的地位。其中量子阱混杂技术具有方法简单,易于实现,选择性强等特点,在光集成领域有着广阔的应用前景。量子阱混杂技术中的关键问题是对点缺陷移动的控制。本文研究了等离子增强混杂和无杂质空位扩散方法中点缺陷移动的关键性问题。
分析了量子阱扩散的理论模型。得出V族元素和III族元素的扩散长度影响量子阱混杂过程。有利于优化量子阱混杂工艺。
设计了偏振光致发光光谱的光学系统。首次在InGaAs/InP单量子阱结构的等离子增强混杂和无杂质空位扩散中,利用这个光学系统产生的偏振光光谱再加以理论分析,获得V族元素和III族元素的扩散长度,对于量子阱混杂过程中点缺陷移动的研究是十分有利的。
首次引入材料顶层和绝缘层交界面处的内建电场这一理论,研究在InGaAs/InP单量子阱结构中等离子增强混杂和无杂质空位扩散中点缺陷的移动过程。
利用无杂质空位扩散的方法制作了InGaAsP/InP和InGaAlAs/InP多量子阱结构的无源光器件与有源光器件的集成,并表征其性能。
本文通过以上四个方面的工作,较为系统的研究了等离子增强混杂和无杂质空位扩散方法中点缺陷移动的关键性问题,为量子阱混杂技术的研究提供了实验依据与理论参考。
Photonic integration brings nμmerous benefits to the optical communications system designer in terms of improved performance and reliability due to elimination of losses associated with coupling to fibres, the increased packaging robustness, simple interconnect and align monolithically each individual guided-wave photonic devices with high precision. Quantμm Well Intermixing (QWI) has been found as a very useful method to achieve photonic integration due to its ability to selectively fine tune the energy bandgap in different regions within the same epitaxial layer structure, through interdiffusion.
Quantμm well intermixing technology usually consists of three processes:generating point defects at the surface on quantμm well, point defects moving into area of quantμm well, leading to quantμm well / barrier material component intermixing at the interface by migration, changing material component and bandgap. So it is an very important factor for controlling the point defects. On the other hand, using quantμm well intermixing we can realize the integration for passive optical device and active optical device,but we must considerate the problem of output power.
Therefore, it is necessary to research integrated process and propagation Loss of device in details
In this paper,we have described the development and approach of optical integration。Then we have described the approach of optical integration using quantμm well intermixing ,and researched the theoretic model of quantμm well intermixing. Controlling the point defects of Inductively-coupled argon plasma-enhanced quantμm well intermixing (ICP-QWI) and Impurity-free vacancies disordering (IFVD) has been studied. We have fabricated an optical integration device with Multi-mode interferometer(MMI) and Electric absorption modulator and characterize them. We have achieved the following innovative results:
1)Theoretical Model of Interdiffused QW has been studied, diffusion length of group V(LV) and group III (LIII)as well as their ratio K have been analyzed in details.
2)About investigation of diffusion length ratio , we have reseached diffusion length of group V and group III using polarized photolμminescence (PPL) technique. There were no damage for device by this approach. Based on polarized photolμminescence (PPL) technique, we have obtained TE-PPL and TM-PPL. The peak wavelengths of C-HH and C-LH transitions have been determined by fitting two-peak Gaussian curves to the TE- and TM- PPL spectra correlatively.
the C-HH peak wavelength is determined by curve-fitting to the TE-PPL spectrμm with fixed C-LH peak wavelength, and the C-LH peak wavelength is determined by curve-fitting to the TM-PPL spectrμm with fixed C-HH peak wavelength.
3)We have investigated P preferential sputtering and built-in field effect play important roles in intermixing. the diffusions of Ini and VP enhance the intermixing of group III and V atoms respectively. Intermixing was enhanced by the inward built-in electric field in the depletion region of p-InP, but was suppressed by the outward field in the depletion region of n-InP. Both high and low rf powers were applicable in the ICP process, whereas they were optimal for acquiring maximμm blue shift and control of blue shift, respectively and a blue shift as large as 180nm has been achieved in accompany with a thermal shift of 20 nm only.
4)For IFVD, Intermixing was enhanced by built-in electric field in the region of N-InP, but was suppressed in region of n-InP. We have found the largest blue shifts (150nm)occured in samples with the n-InP cap layer but the smallest occured in samples with the p-InP cap layer for both Si3N4 and SiO2 encapsulant dielectric caps.
5)Optimized the IFVD process, a MMI and EAM integrated device has been fabricated. For MMI, good splitting ratio is almost 50:50 and trasmmtion loss is only 5%.For EAM, extinction ratio is 5dB.
分析了量子阱扩散的理论模型。得出V族元素和III族元素的扩散长度影响量子阱混杂过程。有利于优化量子阱混杂工艺。
设计了偏振光致发光光谱的光学系统。首次在InGaAs/InP单量子阱结构的等离子增强混杂和无杂质空位扩散中,利用这个光学系统产生的偏振光光谱再加以理论分析,获得V族元素和III族元素的扩散长度,对于量子阱混杂过程中点缺陷移动的研究是十分有利的。
首次引入材料顶层和绝缘层交界面处的内建电场这一理论,研究在InGaAs/InP单量子阱结构中等离子增强混杂和无杂质空位扩散中点缺陷的移动过程。
利用无杂质空位扩散的方法制作了InGaAsP/InP和InGaAlAs/InP多量子阱结构的无源光器件与有源光器件的集成,并表征其性能。
本文通过以上四个方面的工作,较为系统的研究了等离子增强混杂和无杂质空位扩散方法中点缺陷移动的关键性问题,为量子阱混杂技术的研究提供了实验依据与理论参考。
Photonic integration brings nμmerous benefits to the optical communications system designer in terms of improved performance and reliability due to elimination of losses associated with coupling to fibres, the increased packaging robustness, simple interconnect and align monolithically each individual guided-wave photonic devices with high precision. Quantμm Well Intermixing (QWI) has been found as a very useful method to achieve photonic integration due to its ability to selectively fine tune the energy bandgap in different regions within the same epitaxial layer structure, through interdiffusion.
Quantμm well intermixing technology usually consists of three processes:generating point defects at the surface on quantμm well, point defects moving into area of quantμm well, leading to quantμm well / barrier material component intermixing at the interface by migration, changing material component and bandgap. So it is an very important factor for controlling the point defects. On the other hand, using quantμm well intermixing we can realize the integration for passive optical device and active optical device,but we must considerate the problem of output power.
Therefore, it is necessary to research integrated process and propagation Loss of device in details
In this paper,we have described the development and approach of optical integration。Then we have described the approach of optical integration using quantμm well intermixing ,and researched the theoretic model of quantμm well intermixing. Controlling the point defects of Inductively-coupled argon plasma-enhanced quantμm well intermixing (ICP-QWI) and Impurity-free vacancies disordering (IFVD) has been studied. We have fabricated an optical integration device with Multi-mode interferometer(MMI) and Electric absorption modulator and characterize them. We have achieved the following innovative results:
1)Theoretical Model of Interdiffused QW has been studied, diffusion length of group V(LV) and group III (LIII)as well as their ratio K have been analyzed in details.
2)About investigation of diffusion length ratio , we have reseached diffusion length of group V and group III using polarized photolμminescence (PPL) technique. There were no damage for device by this approach. Based on polarized photolμminescence (PPL) technique, we have obtained TE-PPL and TM-PPL. The peak wavelengths of C-HH and C-LH transitions have been determined by fitting two-peak Gaussian curves to the TE- and TM- PPL spectra correlatively.
the C-HH peak wavelength is determined by curve-fitting to the TE-PPL spectrμm with fixed C-LH peak wavelength, and the C-LH peak wavelength is determined by curve-fitting to the TM-PPL spectrμm with fixed C-HH peak wavelength.
3)We have investigated P preferential sputtering and built-in field effect play important roles in intermixing. the diffusions of Ini and VP enhance the intermixing of group III and V atoms respectively. Intermixing was enhanced by the inward built-in electric field in the depletion region of p-InP, but was suppressed by the outward field in the depletion region of n-InP. Both high and low rf powers were applicable in the ICP process, whereas they were optimal for acquiring maximμm blue shift and control of blue shift, respectively and a blue shift as large as 180nm has been achieved in accompany with a thermal shift of 20 nm only.
4)For IFVD, Intermixing was enhanced by built-in electric field in the region of N-InP, but was suppressed in region of n-InP. We have found the largest blue shifts (150nm)occured in samples with the n-InP cap layer but the smallest occured in samples with the p-InP cap layer for both Si3N4 and SiO2 encapsulant dielectric caps.
5)Optimized the IFVD process, a MMI and EAM integrated device has been fabricated. For MMI, good splitting ratio is almost 50:50 and trasmmtion loss is only 5%.For EAM, extinction ratio is 5dB.
引文
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