透射式变掺杂GaAs光电阴极及其在微光像增强器中应用研究
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摘要
为了提高我国三代微光像增强器的技术水平,本文围绕透射式变掺杂GaAs光电阴极材料及组件的制备及评价、组件光学性能、自动激活技术、透射式光谱响应理论以及透射式变掺杂GaAs光电阴极应用等方面开展了系统研究。
采用MBE和MOCVD生长了八种不同掺杂结构的透射式变掺杂GaAs光电阴极材料,对光电阴极材料进行了电化学C-V测试,说明了光电阴极材料实现指数掺杂、梯度掺杂、变组分等不同结构的可行性。对阴极材料和组件进行了X射线衍射测试,建立了GaAlAs/GaAs光电阴极X射线相对衍射强度与灵敏度之间的关系,提出了用X射线相对衍射强度评价GaAlAs/GaAs光电阴极晶体结构的完整性。
建立了透射式阴极组件薄膜光学矩阵理论模型,分析了透射式GaAs光电阴极组件反射率和透射率曲线与膜层几何厚度的关系。利用分光光度计测试了透射式指数掺杂阴极组件样品的反射率和透射率曲线,通过编写的光学性能测试软件很好地拟合了反射率和透射率曲线,获得了阴极组件中各膜层厚度。
通过重新设计微弱信号检测模块,采用程控铯源和氧源电流源,以及优化激活工艺流程,成功研制了透射式变掺杂GaAs光电阴极自动激活系统,实现了变掺杂GaAs光电阴极的自动激活,避免了人工激活误操作的影响,大大提高了光电阴极的激活效率和工艺重复性,从而为高性能透射式变掺杂GaAs光电阴极的量产奠定了坚实的基础。
通过求解一维连续性方程,从短波截止、光学性能两方面修正了透射式GaAs光电阴极量子效率公式,利用该公式很好地拟合了国内外透射式GaAs光电阴极量子效率曲线,获得了相关阴极性能参量。国内外GaAs光电阴极性能参量对比表明,国内变掺杂GaAs光电阴极的电子扩散长度和表面电子逸出几率已经接近甚至超过国外水平,但后界面复合速率仍比国外阴极大,导致国产阴极的短波响应尚不及国外阴极。
对采用透射式变掺杂GaAs光电阴极的12只微光像增强器的灵敏度、分辨力、等效背景照度和亮度增益等参数分别进行了测试,测试得到平均灵敏度为1947μA/lm,平均分辨力为49lp/mm,平均等效背景照度为1.76×10-7lx,平均亮度增益为11155.14。开展了变掺杂GaAs光电阴极微光像增强器的光谱响应监测试验、冲击试验、振动试验和高低温试验的研究,评估了采用透射式变掺杂GaAs光电阴极的微光像增强器光谱灵敏度的稳定性,结果表明变掺杂像管的稳定性要优于均匀掺杂像管,验证了透射式变掺杂GaAs光电阴极在微光像增强器中应用的优越性。
In order to improve the technical level of domestic3rd low-light-level image intensifier, the systematic researches on the preparation and evaluation of transmission-mode varied-doping GaAs cathode material and module, optical performance of cathode module, automatic activation technology, tranmission-mode spectral response theory and application of the tranmission-mode varied-doping GaAs photocathode were carried out in this thesis.
Eight transmission-mode varied-doping GaAs photocathode materials of different doping structures were grown by MBE and MOCVD. The cathode material structure was measured by electrochemical C-V, which validates the feasibility of achievement of the exponential-doping, gradient-doping and varied-composition structure. The cathode material quality was measured by X-ray diffraction, and the relationship between X-ray relative diffraction intensity and integral sensitivity of GaAlAs/GaAs photocathode was established, which proposed an evaluation methode for the crystal lattice integrality of GaAlAs/GaAs photocathode material.
A theoretical mode using the thin film optical matrix for transmission-mode cathode module was set up, which analyzed the relationship between the the reflectance and transmittance curve of transmission-mdoe GaAs photocathode module and the film geometrical thickness. The reflectance and transmittance curves of transmission-mode exponential-doping cathode modules were tested by the spectrophotometer, and were well fitted by the programmed optical performance testing software which could reveal the respective film thickness value in the cathode module.
A computer-automated system that could activate transmission-mode varied-doping GaAs photocathode was developed by redesigning the weak signal detection module, adopting the programmable current source regarding cesium source and oxygen source, and optimizing the activation process flow. This system realized the automatic activation of varied-doping GaAs photocathode, which avoided the manual mis-operation and greatly increased the photocathode activation efficiency and process repeatability. Development of the system laid a foundation for mass-production of high-performance varied-doping GaAs photocathode.
By solving one-dimensional continuity equation, the quantum efficiency formula of transmission-mode GaAs photocathode was revised, which considers the shortwave cutoff and the optical performance. Using the formula, the domestic and foreign quantum efficiency curves of the transmission-mode GaAs photocathode were well fitted and the cathode performance parameters were obtained. Comparison of domestic and foreign GaAs cathode performance parameters shows that the electron diffusion length and surface electron escape probability of varied-doping GaAs photocathode is close to or above the foreign level, while the interface recombination rate is still higher than the foreign cathode, which leads to the backwardness of shortwave response for the domestic cathode.
The sensitivity, resolution, equivalent background input and brightness gain of12low-light-level image intensifiers adopting transmission-mode varied-doping GaAs photocathode were measured, and the measured average sensitivity, average resolution, average equivalent background input and average brightness gain were1947μA/lm,49lp/mm,1.76x10-7lx, and11155.14, respectively. The spectral response monitoring test, impact test, vibration test and high-low temperature test of the image intensifier with varied-doping GaAs photocathode was carried out to assess the spectral sensitivity stability of the low-light-level image intensifier equipped with transmission-mode varied-doping GaAs photocathode. The results show that the the better stability of the varied-doping image intensifier than the uniform-doping one, whihch verifies the superiority in application of the transmission-mode varied-doping GaAs photocathode into image intensifier.
采用MBE和MOCVD生长了八种不同掺杂结构的透射式变掺杂GaAs光电阴极材料,对光电阴极材料进行了电化学C-V测试,说明了光电阴极材料实现指数掺杂、梯度掺杂、变组分等不同结构的可行性。对阴极材料和组件进行了X射线衍射测试,建立了GaAlAs/GaAs光电阴极X射线相对衍射强度与灵敏度之间的关系,提出了用X射线相对衍射强度评价GaAlAs/GaAs光电阴极晶体结构的完整性。
建立了透射式阴极组件薄膜光学矩阵理论模型,分析了透射式GaAs光电阴极组件反射率和透射率曲线与膜层几何厚度的关系。利用分光光度计测试了透射式指数掺杂阴极组件样品的反射率和透射率曲线,通过编写的光学性能测试软件很好地拟合了反射率和透射率曲线,获得了阴极组件中各膜层厚度。
通过重新设计微弱信号检测模块,采用程控铯源和氧源电流源,以及优化激活工艺流程,成功研制了透射式变掺杂GaAs光电阴极自动激活系统,实现了变掺杂GaAs光电阴极的自动激活,避免了人工激活误操作的影响,大大提高了光电阴极的激活效率和工艺重复性,从而为高性能透射式变掺杂GaAs光电阴极的量产奠定了坚实的基础。
通过求解一维连续性方程,从短波截止、光学性能两方面修正了透射式GaAs光电阴极量子效率公式,利用该公式很好地拟合了国内外透射式GaAs光电阴极量子效率曲线,获得了相关阴极性能参量。国内外GaAs光电阴极性能参量对比表明,国内变掺杂GaAs光电阴极的电子扩散长度和表面电子逸出几率已经接近甚至超过国外水平,但后界面复合速率仍比国外阴极大,导致国产阴极的短波响应尚不及国外阴极。
对采用透射式变掺杂GaAs光电阴极的12只微光像增强器的灵敏度、分辨力、等效背景照度和亮度增益等参数分别进行了测试,测试得到平均灵敏度为1947μA/lm,平均分辨力为49lp/mm,平均等效背景照度为1.76×10-7lx,平均亮度增益为11155.14。开展了变掺杂GaAs光电阴极微光像增强器的光谱响应监测试验、冲击试验、振动试验和高低温试验的研究,评估了采用透射式变掺杂GaAs光电阴极的微光像增强器光谱灵敏度的稳定性,结果表明变掺杂像管的稳定性要优于均匀掺杂像管,验证了透射式变掺杂GaAs光电阴极在微光像增强器中应用的优越性。
In order to improve the technical level of domestic3rd low-light-level image intensifier, the systematic researches on the preparation and evaluation of transmission-mode varied-doping GaAs cathode material and module, optical performance of cathode module, automatic activation technology, tranmission-mode spectral response theory and application of the tranmission-mode varied-doping GaAs photocathode were carried out in this thesis.
Eight transmission-mode varied-doping GaAs photocathode materials of different doping structures were grown by MBE and MOCVD. The cathode material structure was measured by electrochemical C-V, which validates the feasibility of achievement of the exponential-doping, gradient-doping and varied-composition structure. The cathode material quality was measured by X-ray diffraction, and the relationship between X-ray relative diffraction intensity and integral sensitivity of GaAlAs/GaAs photocathode was established, which proposed an evaluation methode for the crystal lattice integrality of GaAlAs/GaAs photocathode material.
A theoretical mode using the thin film optical matrix for transmission-mode cathode module was set up, which analyzed the relationship between the the reflectance and transmittance curve of transmission-mdoe GaAs photocathode module and the film geometrical thickness. The reflectance and transmittance curves of transmission-mode exponential-doping cathode modules were tested by the spectrophotometer, and were well fitted by the programmed optical performance testing software which could reveal the respective film thickness value in the cathode module.
A computer-automated system that could activate transmission-mode varied-doping GaAs photocathode was developed by redesigning the weak signal detection module, adopting the programmable current source regarding cesium source and oxygen source, and optimizing the activation process flow. This system realized the automatic activation of varied-doping GaAs photocathode, which avoided the manual mis-operation and greatly increased the photocathode activation efficiency and process repeatability. Development of the system laid a foundation for mass-production of high-performance varied-doping GaAs photocathode.
By solving one-dimensional continuity equation, the quantum efficiency formula of transmission-mode GaAs photocathode was revised, which considers the shortwave cutoff and the optical performance. Using the formula, the domestic and foreign quantum efficiency curves of the transmission-mode GaAs photocathode were well fitted and the cathode performance parameters were obtained. Comparison of domestic and foreign GaAs cathode performance parameters shows that the electron diffusion length and surface electron escape probability of varied-doping GaAs photocathode is close to or above the foreign level, while the interface recombination rate is still higher than the foreign cathode, which leads to the backwardness of shortwave response for the domestic cathode.
The sensitivity, resolution, equivalent background input and brightness gain of12low-light-level image intensifiers adopting transmission-mode varied-doping GaAs photocathode were measured, and the measured average sensitivity, average resolution, average equivalent background input and average brightness gain were1947μA/lm,49lp/mm,1.76x10-7lx, and11155.14, respectively. The spectral response monitoring test, impact test, vibration test and high-low temperature test of the image intensifier with varied-doping GaAs photocathode was carried out to assess the spectral sensitivity stability of the low-light-level image intensifier equipped with transmission-mode varied-doping GaAs photocathode. The results show that the the better stability of the varied-doping image intensifier than the uniform-doping one, whihch verifies the superiority in application of the transmission-mode varied-doping GaAs photocathode into image intensifier.
引文
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