双极晶体管辐射损伤效应及深能级缺陷研究
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摘要
本文以双极晶体管为研究对象，通过辐照源特点及模拟计算分析，选取电子、质子、Co-60射线及重离子作为辐照源，研究了双极晶体管电离效应、位移效应及其协合效应的特点和电性能退化规律。基于双极晶体管辐射效应和电性能退化规律表征、深能级瞬态谱分析及退火效应研究3种技术途径，揭示了双极晶体管的电离效应、位移效应及电离/位移协合效应的机制，建立了双极晶体管电离损伤和位移损伤量化模型。
研究结果表明，不同种类的辐照源辐照时，NPN和PNP型双极晶体管的电性能参数呈现类似的变化趋势，器件类型对电性能参数变化趋势的影响不大。电离辐射损伤条件下，双极晶体管的电性能参数退化随辐照注量逐渐趋于饱和。基于深能级瞬态谱(DLTS)分析结果可知，电离辐射损伤会在双极晶体管集电区产生类深能级缺陷信号，在NPN型晶体管集电区表现为多子俘获陷阱，在PNP型晶体管集电区表现为少子俘获陷阱。位移和电离/位移协合辐射损伤时，双极晶体管的电性能随辐照注量持续退化，未见饱和趋势。位移辐射损伤在双极晶体管集电区中产生的深能级缺陷以多子俘获陷阱为主。基于双极晶体管的电离损伤机制，构建了过剩基极电流的表达式，提出了双极晶体管电流增益随电离辐照注量变化的简化模型，与试验数据吻合良好。
不同种类重离子辐照试验结果表明，在相同位移吸收剂量下，不同种类的重离子对双极晶体管所造成的电性能退化程度和深能级缺陷浓度不同。穿透能力较弱的粒子，易在射程末端产生级联效应，导致深能级缺陷浓度明显提高并加剧晶体管的电性能退化；而穿透力较强的离子，主要在入射路径周围产生空位及间隙原子，所产生的深能级缺陷的浓度较低，电性能退化程度较小。基于入射粒子在晶体管基区产生位移吸收剂量分布的不均匀性和电离效应的影响，提出了优化NIEL方法的新思路，建立了不同种类粒子位移损伤等效性转换关系，与试验结果吻合良好。
经20MeV Br离子辐照的双极晶体管顺序进行110keV电子辐照时，随着电子辐照注量的增加，电流增益的退化先逐渐恢复后继续加剧。DLTS测试结果表明，当低能电子辐照注量较小时，有利于低能电子产生的电离损伤使重离子位移辐射缺陷信号部分恢复，导致双极晶体管的电流增益逐渐恢复；当低能电子注量较大时，低能电子电离辐射损伤效应增强，促进重离子位移辐射缺陷浓度明显增加和电流增益衰降。
不同偏置条件下低能质子和电子顺序辐照试验结果表明，相同辐照注量条件下，双极晶体管发射结零偏时所受辐射损伤程度最大，发射结反偏时辐射损伤程度居中，发射结正偏时辐射损伤程度最小。偏置条件对电离/位移协合辐射效应的影响规律与其对位移辐射效应的影响相同。通过重离子或低能质子与低能电子进行综合辐照试验，揭示了双极晶体管电离损伤对位移损伤起退火和加剧两种作用机制。
在等时退火过程中，经不同类型粒子辐照后的晶体管电性能参数随着退火温度的升高均逐渐恢复。当退火温度达到700K时，NPN和PNP型双极晶体管的电性能参数均可恢复至辐照前的水平。随着退火温度的升高，电离辐射损伤缺陷浓度逐渐降低。对于位移辐射损伤，退火温度较低时(<550K)，随着退火温度的升高，能级较深的缺陷浓度逐渐降低，而能级较浅的缺陷浓度逐渐升高；退火温度较高时(>550K)，随退火温度的升高，辐照缺陷浓度均逐渐降低。
The degradation caused by electrons, protons, heavy ions with various energiesand Co-60source radiation is examined for the bipolar junction transistors, basedon analysis of the space radiation environment and ground-based simulationexperiments. Based on the research of radiation effects and electrical degradation,deep level transient spectra (DLTS) and annealing effects on BJTs, the mechanismsof synergistic effects between ionization and displacement damage are revealed.The model of ionization and displacement damage for the bipolar transistors isgiven.
Experimental results show that with increasing irradiation fluence, thedegradation trends of NPN and PNP bipolar transistors are similar, under a givencondition for different particles, fluxes and energies. For ionizing radiation damage,the degradation of bipolar transistor shows a saturated trend with increasing fluence.Based on the DLTS results, there are the DLTS signals in the base collector junctionof a transistor induced by ionizing radiation. The majority carrier trap defect isfound in the base collector junction of the NPN transistor, while the minority carriertrap defects are measured in the base collector junction of PNP transistor inducedby gamma rays and110keV electrons. However, for displacement and synergisticradiation damage, the degradation of bipolar transistor has no saturated trend. Thedeep level defect in transistor induced by displacement radiation mainly is majoritycarrier trap defect. Based on the mechanism of ionizing damage, the function of theexcess base current and the simple model of current gain degradation in bipolartransistor are built, while the model and the experimental data match well.
The results of various heavy ions radiation experiments show that the electricaldegradation and concentration of defects induced by various heavy ions aredifferent. The particle with small range can produce more clusters and more deeplevel defects, induce more degradation of electrical parameters. The particles withlong range can produce fewer vacancies and interstice atom, and less deep leveldefects, induce less degradation of electrical parameters. Considering theinhomogeneity of the displacement dose in the base region of a bipolar transistorand the impact of ionizing radiation, the equivalence of damage induced by variousdisplacement sources is built, while the model and the experimental data match well.
Based on the experimental results of20MeV Br ions and110keV electronssequence irradiations, the current gain of the transistor irradiated by low energy electrons after heavy ions irradiation, recovers slowly at lower fluence andcontinues degrading at higher fluence. Based on the DLTS results, the ionizingdamage can recover a part of displacement defects, which make the current gainrecovery at lower electron fluence. However, the defects induced by radiationdamage increase with the increasing electron fluence, the current gain of transistorcontinue degrading.
During the sequence exposure of electrons and protons under various biascases, it is observed that the radiation damage in transistor with emitter-basejunction zero bias case is biggest, and the radiation damage under reverse bias caseis smaller, the radiation damage under forward bias case is smallest. The impact ofbias case on synergistic radiation damage is similar as the impact of bias case ondisplacement damage. Based on the combined radiation of heavy ions or lowerenergy protons and electrons, it is clear that the ionization damage could giveannealing and enhancement effect to displacement damage in bipolar junctiontransistors.
In isochronal annealing experiment, the electrical parameters of bipolartransistors recovered with increasing annealing temperature. For various radiationdamages, the electrical parameters of bipolar transistors totally recovered, when theannealing temperature is up to700K. The concentration of the defects induced byionizing radiation damage goes down with the increasing temperature. Fordisplacement damage, the deeper energy level defects decrease and the shallowerenergy level defects with the increasing annealing temperature, when thetemperature is below550K. Meanwhile, all of the defects decrease with theincreasing annealing temperature, when the temperature is above550K.
研究结果表明，不同种类的辐照源辐照时，NPN和PNP型双极晶体管的电性能参数呈现类似的变化趋势，器件类型对电性能参数变化趋势的影响不大。电离辐射损伤条件下，双极晶体管的电性能参数退化随辐照注量逐渐趋于饱和。基于深能级瞬态谱(DLTS)分析结果可知，电离辐射损伤会在双极晶体管集电区产生类深能级缺陷信号，在NPN型晶体管集电区表现为多子俘获陷阱，在PNP型晶体管集电区表现为少子俘获陷阱。位移和电离/位移协合辐射损伤时，双极晶体管的电性能随辐照注量持续退化，未见饱和趋势。位移辐射损伤在双极晶体管集电区中产生的深能级缺陷以多子俘获陷阱为主。基于双极晶体管的电离损伤机制，构建了过剩基极电流的表达式，提出了双极晶体管电流增益随电离辐照注量变化的简化模型，与试验数据吻合良好。
不同种类重离子辐照试验结果表明，在相同位移吸收剂量下，不同种类的重离子对双极晶体管所造成的电性能退化程度和深能级缺陷浓度不同。穿透能力较弱的粒子，易在射程末端产生级联效应，导致深能级缺陷浓度明显提高并加剧晶体管的电性能退化；而穿透力较强的离子，主要在入射路径周围产生空位及间隙原子，所产生的深能级缺陷的浓度较低，电性能退化程度较小。基于入射粒子在晶体管基区产生位移吸收剂量分布的不均匀性和电离效应的影响，提出了优化NIEL方法的新思路，建立了不同种类粒子位移损伤等效性转换关系，与试验结果吻合良好。
经20MeV Br离子辐照的双极晶体管顺序进行110keV电子辐照时，随着电子辐照注量的增加，电流增益的退化先逐渐恢复后继续加剧。DLTS测试结果表明，当低能电子辐照注量较小时，有利于低能电子产生的电离损伤使重离子位移辐射缺陷信号部分恢复，导致双极晶体管的电流增益逐渐恢复；当低能电子注量较大时，低能电子电离辐射损伤效应增强，促进重离子位移辐射缺陷浓度明显增加和电流增益衰降。
不同偏置条件下低能质子和电子顺序辐照试验结果表明，相同辐照注量条件下，双极晶体管发射结零偏时所受辐射损伤程度最大，发射结反偏时辐射损伤程度居中，发射结正偏时辐射损伤程度最小。偏置条件对电离/位移协合辐射效应的影响规律与其对位移辐射效应的影响相同。通过重离子或低能质子与低能电子进行综合辐照试验，揭示了双极晶体管电离损伤对位移损伤起退火和加剧两种作用机制。
在等时退火过程中，经不同类型粒子辐照后的晶体管电性能参数随着退火温度的升高均逐渐恢复。当退火温度达到700K时，NPN和PNP型双极晶体管的电性能参数均可恢复至辐照前的水平。随着退火温度的升高，电离辐射损伤缺陷浓度逐渐降低。对于位移辐射损伤，退火温度较低时(<550K)，随着退火温度的升高，能级较深的缺陷浓度逐渐降低，而能级较浅的缺陷浓度逐渐升高；退火温度较高时(>550K)，随退火温度的升高，辐照缺陷浓度均逐渐降低。
The degradation caused by electrons, protons, heavy ions with various energiesand Co-60source radiation is examined for the bipolar junction transistors, basedon analysis of the space radiation environment and ground-based simulationexperiments. Based on the research of radiation effects and electrical degradation,deep level transient spectra (DLTS) and annealing effects on BJTs, the mechanismsof synergistic effects between ionization and displacement damage are revealed.The model of ionization and displacement damage for the bipolar transistors isgiven.
Experimental results show that with increasing irradiation fluence, thedegradation trends of NPN and PNP bipolar transistors are similar, under a givencondition for different particles, fluxes and energies. For ionizing radiation damage,the degradation of bipolar transistor shows a saturated trend with increasing fluence.Based on the DLTS results, there are the DLTS signals in the base collector junctionof a transistor induced by ionizing radiation. The majority carrier trap defect isfound in the base collector junction of the NPN transistor, while the minority carriertrap defects are measured in the base collector junction of PNP transistor inducedby gamma rays and110keV electrons. However, for displacement and synergisticradiation damage, the degradation of bipolar transistor has no saturated trend. Thedeep level defect in transistor induced by displacement radiation mainly is majoritycarrier trap defect. Based on the mechanism of ionizing damage, the function of theexcess base current and the simple model of current gain degradation in bipolartransistor are built, while the model and the experimental data match well.
The results of various heavy ions radiation experiments show that the electricaldegradation and concentration of defects induced by various heavy ions aredifferent. The particle with small range can produce more clusters and more deeplevel defects, induce more degradation of electrical parameters. The particles withlong range can produce fewer vacancies and interstice atom, and less deep leveldefects, induce less degradation of electrical parameters. Considering theinhomogeneity of the displacement dose in the base region of a bipolar transistorand the impact of ionizing radiation, the equivalence of damage induced by variousdisplacement sources is built, while the model and the experimental data match well.
Based on the experimental results of20MeV Br ions and110keV electronssequence irradiations, the current gain of the transistor irradiated by low energy electrons after heavy ions irradiation, recovers slowly at lower fluence andcontinues degrading at higher fluence. Based on the DLTS results, the ionizingdamage can recover a part of displacement defects, which make the current gainrecovery at lower electron fluence. However, the defects induced by radiationdamage increase with the increasing electron fluence, the current gain of transistorcontinue degrading.
During the sequence exposure of electrons and protons under various biascases, it is observed that the radiation damage in transistor with emitter-basejunction zero bias case is biggest, and the radiation damage under reverse bias caseis smaller, the radiation damage under forward bias case is smallest. The impact ofbias case on synergistic radiation damage is similar as the impact of bias case ondisplacement damage. Based on the combined radiation of heavy ions or lowerenergy protons and electrons, it is clear that the ionization damage could giveannealing and enhancement effect to displacement damage in bipolar junctiontransistors.
In isochronal annealing experiment, the electrical parameters of bipolartransistors recovered with increasing annealing temperature. For various radiationdamages, the electrical parameters of bipolar transistors totally recovered, when theannealing temperature is up to700K. The concentration of the defects induced byionizing radiation damage goes down with the increasing temperature. Fordisplacement damage, the deeper energy level defects decrease and the shallowerenergy level defects with the increasing annealing temperature, when thetemperature is below550K. Meanwhile, all of the defects decrease with theincreasing annealing temperature, when the temperature is above550K.
引文
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