量子点红外探测器特性表征方法研究
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摘要
随着人类探测领域的不断扩大和深入，人们对高性能探测器的需求也不断地增加。近年来出现的量子点红外探测器由于具有低暗电流、高增益、高探测率等优越特性，引起了人们的广泛关注。这种新型光电导探测器采用了量子点纳米结构，使影响其特性的因素发生了明显的变化，而以往光电导探测器特性表征方法没有充分考虑这些因素的影响，因此本文从四个方面开展了对量子点红外探测器特性表征问题的研究，以期为探测器的优化设计提供可靠的理论支持。具体工作主要包括：
1.分析了量子点红外探测器中电子传输的特点，提出了新的暗电流模型。该模型考虑了微米尺度电子传输和纳米尺度电子传输共同对暗电流的影响，通过统计势垒中的移动载流子数，实现了对暗电流的预测和估算。在此基础上，通过考虑载流子漂移速度和探测器外加偏置电压之间的相互依赖关系，改进了这一暗电流模型，使探测器暗电流的计算更加准确。
2.基于前面改进的暗电流模型，结合探测器光电导增益的算法，提出了量子点红外探测器的噪声模型。首先分析了扩散限系统下载流子从激发态返回到基态的再复合时间，结合量子点红外探测器的结构特点，得到了光电导增益的理论模型；之后通过分析探测器的噪声特点，指出噪声主要来源于电子的产生-复合过程，结合增益模型，建立了量子点红外探测器的噪声模型。结果显示，该模型使噪声的量化更加符合探测器的实际运行机制。
3.基于前面提出的兼顾两种传输的暗电流模型，从电子激发和连续势能分布两个角度构建了探测器的性能模型。基于电子激发的性能模型认为电子激发有两种方式：热激发和场辅助隧穿激发。通过估算热激发和场辅助隧穿激发的速度来估算暗条件下的载流子数，得到了暗条件下的电流平衡关系，构建了光电流、响应率、探测率的理论模型。基于连续势能分布的探测器性能模型通过求解满足泊松方程的连续势能分布与穿过非平面小孔的电流之间的关系，与前面提出的暗电流模型一起建立了探测器的性能模型，主要包含光电流模型、探测率模型等。最后，把这两种模型进行了比较，指出了它们之间的差异性。
4.分析了不同入射模式下量子点红外探测器的特性。首先建立了垂直入射时探测器的J.Phllips模型，对垂直入射暗电流和探测率进行了研究；其次比较了垂直入射模式和斜入射模式下探测器的特性；最后通过与量子阱红外探测器相比较，给出了不同入射模式下量子点红外探测器的特性优势。
With the expanding and deepending of the detecting application, there are moreand more demands for the high performance and high quality detectors. Due to itsspecial quantum dot nano-structure, quantum dot infrared photodetectors, which emergein recent year, show more efficiency properties such as a low dark current, a high gain,and thus attract a wide attention. Since traditional performance methods don’t considerthe influence of these factors, the performance characterization methods of quamtumdot infrared photodetectors are studied from four aspects in this paper, which willprovide us with reliable theoretical support for the detector optimization. Specifically,these works are as follows.
1. Electron transports in quantum dot infrared photodetectors are analysised, and adark current model is proposed. In the model，the microscale and nanoscale electrontransports are considered, the dark current is forecasted and estimated by counting thecarriers in the barriers. This dark current model is improved with the consideration ofthe relationship between the drift velocity of electrons and the bias voltage of thephotodetector. As a result, the calculation of the dark current is more accurate than thatof the previous dark current.
2. Based on the improved dark current model, the noise model of quantum dotinfrared photodetectors is proposed with the calculation method of photoconductivegain. Firstly，after the time from the extend state to gound state of carriers in thediffusion limited system is analysed, the photoconductive gain model is obtained withthe structure characteristics of quantum dot infrared photodetector. Sencodly, the noisefeatures of the photodetector are analysed, and it is pointed out that the noise come fromthe generation-recombination procession of carriers. in the end, the noise model of thequantum dot infrared photodetector is built with the consideration of the gain model.The calculated results show that the model makes the calculation of the noise moreconsistent with the work mechanism of the photodetector.
3. Based on the dark current model including two electron transports, theperformance models of photodetectors are built from the two aspects which are theemission of and the continuous potential distribution of electrons. The performancemodel on the basis of electron emission supposes that there are two electron emissions:thermal emission and field-assisted tunneling emission. The number of carriers in aquantum dot is obtained by estimating the carriers rates of the thermal emission andfield–assisted tunneling emission, and the current balance relaition under the dark condition is obtained, thus the models for the photocurrent, responsivity and detectivityof the photodetectors is bulit. The performance model on the basis of the electronscontinuous potential distribution supposes that the potential distribution satisfied thepoisson distribution, by sloveling the Poisson equation and considering the relationbetween the current through the punctures in the planar potential barriers and potentialdistribution, the performance models of photodetectors such as photocurrent，detectivityare built together with the previous dark current model. Finally，the comparisionbetween two performance models is made，and the differences between them areillustrated.
4. The properties of quantum dot infrared photodetectors under different incidentmodels are analyzed. Firstly, J.Phllips model of the photodetector under the normalincidence is built, and then the normal incidence dark current and detectivity are studied.Secondly, the properties of the quantum dot infrared photodetector under the normalnormal incidence and oblique incidence model are compared. In the end, the advantagesin properties of quantum dot infrared photodetectors under different incidence modelsare presented by the comparision between quantum well infrared photodetectors andquantum dot infrared photodetectors.
1.分析了量子点红外探测器中电子传输的特点，提出了新的暗电流模型。该模型考虑了微米尺度电子传输和纳米尺度电子传输共同对暗电流的影响，通过统计势垒中的移动载流子数，实现了对暗电流的预测和估算。在此基础上，通过考虑载流子漂移速度和探测器外加偏置电压之间的相互依赖关系，改进了这一暗电流模型，使探测器暗电流的计算更加准确。
2.基于前面改进的暗电流模型，结合探测器光电导增益的算法，提出了量子点红外探测器的噪声模型。首先分析了扩散限系统下载流子从激发态返回到基态的再复合时间，结合量子点红外探测器的结构特点，得到了光电导增益的理论模型；之后通过分析探测器的噪声特点，指出噪声主要来源于电子的产生-复合过程，结合增益模型，建立了量子点红外探测器的噪声模型。结果显示，该模型使噪声的量化更加符合探测器的实际运行机制。
3.基于前面提出的兼顾两种传输的暗电流模型，从电子激发和连续势能分布两个角度构建了探测器的性能模型。基于电子激发的性能模型认为电子激发有两种方式：热激发和场辅助隧穿激发。通过估算热激发和场辅助隧穿激发的速度来估算暗条件下的载流子数，得到了暗条件下的电流平衡关系，构建了光电流、响应率、探测率的理论模型。基于连续势能分布的探测器性能模型通过求解满足泊松方程的连续势能分布与穿过非平面小孔的电流之间的关系，与前面提出的暗电流模型一起建立了探测器的性能模型，主要包含光电流模型、探测率模型等。最后，把这两种模型进行了比较，指出了它们之间的差异性。
4.分析了不同入射模式下量子点红外探测器的特性。首先建立了垂直入射时探测器的J.Phllips模型，对垂直入射暗电流和探测率进行了研究；其次比较了垂直入射模式和斜入射模式下探测器的特性；最后通过与量子阱红外探测器相比较，给出了不同入射模式下量子点红外探测器的特性优势。
With the expanding and deepending of the detecting application, there are moreand more demands for the high performance and high quality detectors. Due to itsspecial quantum dot nano-structure, quantum dot infrared photodetectors, which emergein recent year, show more efficiency properties such as a low dark current, a high gain,and thus attract a wide attention. Since traditional performance methods don’t considerthe influence of these factors, the performance characterization methods of quamtumdot infrared photodetectors are studied from four aspects in this paper, which willprovide us with reliable theoretical support for the detector optimization. Specifically,these works are as follows.
1. Electron transports in quantum dot infrared photodetectors are analysised, and adark current model is proposed. In the model，the microscale and nanoscale electrontransports are considered, the dark current is forecasted and estimated by counting thecarriers in the barriers. This dark current model is improved with the consideration ofthe relationship between the drift velocity of electrons and the bias voltage of thephotodetector. As a result, the calculation of the dark current is more accurate than thatof the previous dark current.
2. Based on the improved dark current model, the noise model of quantum dotinfrared photodetectors is proposed with the calculation method of photoconductivegain. Firstly，after the time from the extend state to gound state of carriers in thediffusion limited system is analysed, the photoconductive gain model is obtained withthe structure characteristics of quantum dot infrared photodetector. Sencodly, the noisefeatures of the photodetector are analysed, and it is pointed out that the noise come fromthe generation-recombination procession of carriers. in the end, the noise model of thequantum dot infrared photodetector is built with the consideration of the gain model.The calculated results show that the model makes the calculation of the noise moreconsistent with the work mechanism of the photodetector.
3. Based on the dark current model including two electron transports, theperformance models of photodetectors are built from the two aspects which are theemission of and the continuous potential distribution of electrons. The performancemodel on the basis of electron emission supposes that there are two electron emissions:thermal emission and field-assisted tunneling emission. The number of carriers in aquantum dot is obtained by estimating the carriers rates of the thermal emission andfield–assisted tunneling emission, and the current balance relaition under the dark condition is obtained, thus the models for the photocurrent, responsivity and detectivityof the photodetectors is bulit. The performance model on the basis of the electronscontinuous potential distribution supposes that the potential distribution satisfied thepoisson distribution, by sloveling the Poisson equation and considering the relationbetween the current through the punctures in the planar potential barriers and potentialdistribution, the performance models of photodetectors such as photocurrent，detectivityare built together with the previous dark current model. Finally，the comparisionbetween two performance models is made，and the differences between them areillustrated.
4. The properties of quantum dot infrared photodetectors under different incidentmodels are analyzed. Firstly, J.Phllips model of the photodetector under the normalincidence is built, and then the normal incidence dark current and detectivity are studied.Secondly, the properties of the quantum dot infrared photodetector under the normalnormal incidence and oblique incidence model are compared. In the end, the advantagesin properties of quantum dot infrared photodetectors under different incidence modelsare presented by the comparision between quantum well infrared photodetectors andquantum dot infrared photodetectors.
引文
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