RF MEMS移相器和太赫兹波导滤波器研究
摘要
RF MEMS（射频微机械）技术的出现为微波器件的设计和加工提供了新途径。RF MEMS器件具有可集成、低功耗、高线性度以及小型化等优异性能，在民用和军事领域都有着非常广阔的应用前景。为兼顾RF MEMS可动与固定器件，本文针对RF MEMS移相器和基于MEMS工艺的太赫兹波导滤波器进行性能优化和工艺实现两方面的研究，主要研究内容和取得的创新成果如下：
（1）通过分析串联MAM电容的分布式移相器中电磁波传输的不连续性，提取寄生参数，得到等效电路模型。仿真结果的拟合度表明，所建立的电路模型能精确反映器件性能，较目前常用模型准确度得到了极大提高。
提出传输线分解的建模思想，将RF MEMS器件分解为典型结构，将这些典型结构看作不同结构的传输线分别建模，级联获得器件等效电路模型。验证结果表明，应用该思想建立的电路模型在较宽频段内均能反映分布式移相器性能变化规律。这种方法将复杂的三维电磁场分析转化为传输线问题进行处理，简单易行，而且由于RF MEMS器件中基本结构的一致性，所得典型结构的电路模型具备通用性。
（2）提出了以分布式移相器物理长度为优化目标的设计方法，并研究如何得到工艺依赖性小的设计。基于此，设计、加工和测试了一种X波段五位分布式移相器。解决了结构层残余应力、MEMS梁锚点可靠性和工艺精度等问题，突破牺牲层、结构层和介质层制备等关键工艺步骤，形成了可用于制作包含悬空梁结构的RF MEMS器件的表面微加工工艺流程。同文献报道的MEMS分布式移相器相比，所得移相器具有工艺难度小、尺寸小以及下拉电压低的特点。
（3）提出了一种弯折型分布式移相器，通过在共用地线的弯折CPW上加载MEMS桥，大幅度减小了器件长度，得到紧凑结构，从而确保了工艺一致性。同时，本文提出非周期性MEMS分布式移相器结构，将不同相移量的单元级联，增加了设计自由度，并减少了MEMS梁的数目。利用所提出的结构进行周期性和非周期性弯折型五位分布式移相器的设计仿真，性能理想，面积分别为5.36mm*4.72mm和4.8mm*3.75mm。
（4）针对多位分布式移相器的特殊性，全面分析了相移误差来源。提出并证明了影响多位分布式移相器相移精度的关键因素是在相移状态的切换过程中位与位之间失配。并提出了多位分布式移相器相移量不同位的最优排列顺序，改善移相精度。
提出了一种多偏置分布式移相器结构，通过移相单元离散控制避免了因位与位之间的失配引起的多次反射，也缓解了回波损耗和小型化之间的矛盾。设计结果表明，这种结构的分布式移相器相移精度得到明显改善，同时回波损耗和插入损耗也得到改善。同时本文将多偏置结构和非周期结构结合起来，大幅度减小了多位移相器的MEMS梁数目，得到只有16个MEMS梁的五位分布式移相器。提出一种单电压控制多个MEMS梁的分布式移相器结构，直流偏置焊盘可以减少3-4倍，减轻了封装时互联线的寄生效应以及引起的性能恶化。
（5）研究RF MEMS移相器的另外一种类型---开关线型移相器，采用单刀双掷开关和单刀四掷开关得到五位开关线型移相器紧凑结构，分析MEMS开关的电路模型以及开关和外围电路连接时金丝焊线的影响，通过加工和测试得到了较好的测试结果。
（6）提出应用MEMS加工技术制作太赫兹并联电感耦合波导带通滤波器的方法。立足于现有工艺条件，通过分析加工因素对滤波器电磁性能的影响，将工艺和设计参数相互折中达到优化设计的目的，避免因工艺原因造成的器件性能急剧恶化。进行MEMS深刻蚀（ICP）、溅射电镀金属、键合等关键工艺步骤研究，解决了膜片陡直度、金属厚度以及粗糙度等问题，提出滤波器工艺流程。通过加工和测试最终得到插入损耗小、可靠性好、可集成的THz滤波器，中心频率140GHz和170GHz处功率衰减小于1dB。
The appearance of RF MEMS technology provides a new way to design andfabricate microwave devices. With high performances including integrability, low loss,high linearity and miniature, RF MEMS devices have broad prospects in applying bothfor civil use and for military use. In the dissertation, taking account of both movable andfixed devices, RF MEMS Phase Shifters and Terahertz Waveguide Filters are studied insome aspects of performance optimization and process realization. The main researchesand innovative achievements are as follows.
(1) Extracting parasitic parameters by analyzing the discontinued of distributedMEMS phase shifter with MAM capacitor, equivalent-circuit models are presented. Thefitting degree of simulation results shows that, compared with existingequivalent-circuit model, the model’s accuracy was improved greatly, which couldreflect the performances accurately.
A modeling idea of transmission line decomposition is advanced, that is, RFMEMSdevice is divided into some typical structures, which can be considered as differenttransmission lines and be modeled respectively to get equivalent circuit model of thedevice by cascading. The verification results indicate that the equivalent-circuit modelobtained by the idea could reflect the device performance over a wide frequency band.This method turns the complex three-dimensional electromagnetic field analysis into thetransmission line problem，which is easier and more applicable. With the similarity ofbasic structures of RF MEMS devices, the obtained circuit models of typical structureshave versatility.
(2) The design method to optimize the physic length of MEMS distributed phaseshifters is presented. The researches are carried out on how to achieve designs with lowdependence on processing. Based on those, an X-band5-bit distributed phase shifterwas designed, processed and tested. After solving problems including the residual stressof the structural layer, the reliability of MEMS beam anchor and process accuracy, andbreaking through critical processing steps like the sacrificial layer, the structure layer and the dielectric layer, the formed surface micromachining process could be used to fabr icate RF MEMS devices that contain suspended beam structure. Compared with MEMSdistributed phase shifters reported in the literature, the fabricated phase shifter hascharacteristics of easier process, smaller size and lower actuated voltage.
(3) A novel meander distributed phase shifter is advanced. By loading MEMSbridges on meander CPW lines making full use of common ground plane, the length ofdevices are greatly reduced to get a compact structure, thus ensuring processconsistency. Besides, aperiodic distributed phase shifters are advanced, in which unitcells with different phase shifts was cascaded, design flexibility was added and thenumber of MEMS bridges was reduced. Making use of the proposed structures, periodicand aperiodic5-bit distributed phase shifters are designed and simulated to achievesatisfactory performances and in the area of5.36mm*4.72mm and4.8mm*3.75mm.
(4) Aimed to the particularity of multi-bit MEMS distributed phase shifters,sources of phase error are investigated comprehensively. The key factor influencing thephase error of phase shifters is proposed and verified, which is mismatch betweenadjacent bits in the phase states switching process. An optimal arrangement of bits withdifferent phase shifts for multi-bit MEMS distributed phase shifters is put forward toimprove phase error.
A novel distributed phase shifter with more biased pads is proposed, by controllingthe phase shifter from the unit cell level, multiple reflection of the signal resulted frommismatch between bits is avoided. The contradiction of miniaturization and return lossis also alleviated to some extent. The design results show that phase error of distributedphase shifters using the structure was improved. The return loss and insertion loss arealso improved.Combining the structure of more biased pads with aperiodic structure, thenumber of MEMS bridges in distributed phase shifter is decreased sharply and5-bitphase shifter with only16MEMS bridges is obtained. The structure of distributed phaseshifter in which single bias control many MEMS bridges is given. So bias pads can bereduced three or four times and the interconnection parasitic effects and performancedeterioration in package are alleviated.
(5) Another type of RF MEMS phase shifters---switched-line phase shifters areresearched. A compact5-bit phase shifter is designed which adopts SP2T and SP4T. Thecircuit model of MEMS switches and the effects of the bonding wire connectedswitches and peripheral circuits are analyzed. Good measurements results are got after processing and testing.
(6) The method of fabricating Terahertz iris band-pass filter by adopting MEMStechnology is presented. Based on the existing process conditions, through analyzing theinfluence of process factors on electromagnetic performace of filters, the process anddesigning parameters are mutually compromised to obtain optimized design. Sharpdeterioration of device performance due to process factors is avoided. Meanwhile, somecritical processing steps like MEMS ICP etching, electroplating gold and bonding andso on were researched, thus solving the problems like iris sidewall angle, metalthickness and roughness. The micromachining process of the filters is proposed.Ultimately the integratable THz filters of small insertion loss and high reliability isobtained by fabrication and test，whose power attenuation are below1dB at the centerfrequency140GHz and170GHz.
（1）通过分析串联MAM电容的分布式移相器中电磁波传输的不连续性，提取寄生参数，得到等效电路模型。仿真结果的拟合度表明，所建立的电路模型能精确反映器件性能，较目前常用模型准确度得到了极大提高。
提出传输线分解的建模思想，将RF MEMS器件分解为典型结构，将这些典型结构看作不同结构的传输线分别建模，级联获得器件等效电路模型。验证结果表明，应用该思想建立的电路模型在较宽频段内均能反映分布式移相器性能变化规律。这种方法将复杂的三维电磁场分析转化为传输线问题进行处理，简单易行，而且由于RF MEMS器件中基本结构的一致性，所得典型结构的电路模型具备通用性。
（2）提出了以分布式移相器物理长度为优化目标的设计方法，并研究如何得到工艺依赖性小的设计。基于此，设计、加工和测试了一种X波段五位分布式移相器。解决了结构层残余应力、MEMS梁锚点可靠性和工艺精度等问题，突破牺牲层、结构层和介质层制备等关键工艺步骤，形成了可用于制作包含悬空梁结构的RF MEMS器件的表面微加工工艺流程。同文献报道的MEMS分布式移相器相比，所得移相器具有工艺难度小、尺寸小以及下拉电压低的特点。
（3）提出了一种弯折型分布式移相器，通过在共用地线的弯折CPW上加载MEMS桥，大幅度减小了器件长度，得到紧凑结构，从而确保了工艺一致性。同时，本文提出非周期性MEMS分布式移相器结构，将不同相移量的单元级联，增加了设计自由度，并减少了MEMS梁的数目。利用所提出的结构进行周期性和非周期性弯折型五位分布式移相器的设计仿真，性能理想，面积分别为5.36mm*4.72mm和4.8mm*3.75mm。
（4）针对多位分布式移相器的特殊性，全面分析了相移误差来源。提出并证明了影响多位分布式移相器相移精度的关键因素是在相移状态的切换过程中位与位之间失配。并提出了多位分布式移相器相移量不同位的最优排列顺序，改善移相精度。
提出了一种多偏置分布式移相器结构，通过移相单元离散控制避免了因位与位之间的失配引起的多次反射，也缓解了回波损耗和小型化之间的矛盾。设计结果表明，这种结构的分布式移相器相移精度得到明显改善，同时回波损耗和插入损耗也得到改善。同时本文将多偏置结构和非周期结构结合起来，大幅度减小了多位移相器的MEMS梁数目，得到只有16个MEMS梁的五位分布式移相器。提出一种单电压控制多个MEMS梁的分布式移相器结构，直流偏置焊盘可以减少3-4倍，减轻了封装时互联线的寄生效应以及引起的性能恶化。
（5）研究RF MEMS移相器的另外一种类型---开关线型移相器，采用单刀双掷开关和单刀四掷开关得到五位开关线型移相器紧凑结构，分析MEMS开关的电路模型以及开关和外围电路连接时金丝焊线的影响，通过加工和测试得到了较好的测试结果。
（6）提出应用MEMS加工技术制作太赫兹并联电感耦合波导带通滤波器的方法。立足于现有工艺条件，通过分析加工因素对滤波器电磁性能的影响，将工艺和设计参数相互折中达到优化设计的目的，避免因工艺原因造成的器件性能急剧恶化。进行MEMS深刻蚀（ICP）、溅射电镀金属、键合等关键工艺步骤研究，解决了膜片陡直度、金属厚度以及粗糙度等问题，提出滤波器工艺流程。通过加工和测试最终得到插入损耗小、可靠性好、可集成的THz滤波器，中心频率140GHz和170GHz处功率衰减小于1dB。
The appearance of RF MEMS technology provides a new way to design andfabricate microwave devices. With high performances including integrability, low loss,high linearity and miniature, RF MEMS devices have broad prospects in applying bothfor civil use and for military use. In the dissertation, taking account of both movable andfixed devices, RF MEMS Phase Shifters and Terahertz Waveguide Filters are studied insome aspects of performance optimization and process realization. The main researchesand innovative achievements are as follows.
(1) Extracting parasitic parameters by analyzing the discontinued of distributedMEMS phase shifter with MAM capacitor, equivalent-circuit models are presented. Thefitting degree of simulation results shows that, compared with existingequivalent-circuit model, the model’s accuracy was improved greatly, which couldreflect the performances accurately.
A modeling idea of transmission line decomposition is advanced, that is, RFMEMSdevice is divided into some typical structures, which can be considered as differenttransmission lines and be modeled respectively to get equivalent circuit model of thedevice by cascading. The verification results indicate that the equivalent-circuit modelobtained by the idea could reflect the device performance over a wide frequency band.This method turns the complex three-dimensional electromagnetic field analysis into thetransmission line problem，which is easier and more applicable. With the similarity ofbasic structures of RF MEMS devices, the obtained circuit models of typical structureshave versatility.
(2) The design method to optimize the physic length of MEMS distributed phaseshifters is presented. The researches are carried out on how to achieve designs with lowdependence on processing. Based on those, an X-band5-bit distributed phase shifterwas designed, processed and tested. After solving problems including the residual stressof the structural layer, the reliability of MEMS beam anchor and process accuracy, andbreaking through critical processing steps like the sacrificial layer, the structure layer and the dielectric layer, the formed surface micromachining process could be used to fabr icate RF MEMS devices that contain suspended beam structure. Compared with MEMSdistributed phase shifters reported in the literature, the fabricated phase shifter hascharacteristics of easier process, smaller size and lower actuated voltage.
(3) A novel meander distributed phase shifter is advanced. By loading MEMSbridges on meander CPW lines making full use of common ground plane, the length ofdevices are greatly reduced to get a compact structure, thus ensuring processconsistency. Besides, aperiodic distributed phase shifters are advanced, in which unitcells with different phase shifts was cascaded, design flexibility was added and thenumber of MEMS bridges was reduced. Making use of the proposed structures, periodicand aperiodic5-bit distributed phase shifters are designed and simulated to achievesatisfactory performances and in the area of5.36mm*4.72mm and4.8mm*3.75mm.
(4) Aimed to the particularity of multi-bit MEMS distributed phase shifters,sources of phase error are investigated comprehensively. The key factor influencing thephase error of phase shifters is proposed and verified, which is mismatch betweenadjacent bits in the phase states switching process. An optimal arrangement of bits withdifferent phase shifts for multi-bit MEMS distributed phase shifters is put forward toimprove phase error.
A novel distributed phase shifter with more biased pads is proposed, by controllingthe phase shifter from the unit cell level, multiple reflection of the signal resulted frommismatch between bits is avoided. The contradiction of miniaturization and return lossis also alleviated to some extent. The design results show that phase error of distributedphase shifters using the structure was improved. The return loss and insertion loss arealso improved.Combining the structure of more biased pads with aperiodic structure, thenumber of MEMS bridges in distributed phase shifter is decreased sharply and5-bitphase shifter with only16MEMS bridges is obtained. The structure of distributed phaseshifter in which single bias control many MEMS bridges is given. So bias pads can bereduced three or four times and the interconnection parasitic effects and performancedeterioration in package are alleviated.
(5) Another type of RF MEMS phase shifters---switched-line phase shifters areresearched. A compact5-bit phase shifter is designed which adopts SP2T and SP4T. Thecircuit model of MEMS switches and the effects of the bonding wire connectedswitches and peripheral circuits are analyzed. Good measurements results are got after processing and testing.
(6) The method of fabricating Terahertz iris band-pass filter by adopting MEMStechnology is presented. Based on the existing process conditions, through analyzing theinfluence of process factors on electromagnetic performace of filters, the process anddesigning parameters are mutually compromised to obtain optimized design. Sharpdeterioration of device performance due to process factors is avoided. Meanwhile, somecritical processing steps like MEMS ICP etching, electroplating gold and bonding andso on were researched, thus solving the problems like iris sidewall angle, metalthickness and roughness. The micromachining process of the filters is proposed.Ultimately the integratable THz filters of small insertion loss and high reliability isobtained by fabrication and test，whose power attenuation are below1dB at the centerfrequency140GHz and170GHz.
引文
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