To probe the performance of perovskite memory device:defects property and hysteresis

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• 英文论文题名：To probe the performance of perovskite memory device:defects property and hysteresis
• 论文作者：Ziqi Xu ; Nengxu Li ; Guanhaojie Zheng ; Qi Chen ; Huanping Zhou
• 英文论文作者：Ziqi Xu ; Nengxu Li ; Guanhaojie Zheng ; Qi Chen ; Huanping Zhou ; Happy Lab ; College of Engineering ; Peking University
• 年：2017
• 作者机构：Happy Lab, College of Engineering,Peking University;
• 英文论文关键词：perovskite ; memory device ; set voltage ; trap density ; hysteresis
• 会议召开时间：2017-05-27
• 会议录名称：第四届新型太阳能电池学术研讨会论文集
• 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
• 语种：英文
• 分类号：TP333
• 学会代码：ZKYQ
• 会议名称：第四届新型太阳能电池学术研讨会
• 会议地点：中国北京
• 主办单位：中国可再生能源学会光化学专业委员会
• 学会名称：中国科学院物理研究所清洁能源实验室
• 页数：1
• 文件大小：517k
• 原文格式：D
• 会议级别：全国

摘要

Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics.Along with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel materials.Here, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile memory.The memory device shows the operate voltage as low as 0.25 V, and a decent on/off ratio.More importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device performance.The findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.
Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics.Along with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel materials.Here, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile memory.The memory device shows the operate voltage as low as 0.25 V, and a decent on/off ratio.More importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device performance.The findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.

引文

[1]Z.Xu,Z.Liu,Y.Huang,G.Zheng,Q.Chen and H.Zhou,J.Mater.Chem.C,2017,DOI:10 .1039/c7tc00266a