Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO_2/Si gate stacks by Al_2O_3 incorporation
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- 英文论文题名：Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO_2/Si gate stacks by Al_2O_3 incorporation
- 论文作者：Juan Gao ; Gang He ; Zhaoqi Sun ; Dongqi Xiao
- 英文论文作者：Juan Gao ; Gang He ; Zhaoqi Sun ; Dongqi Xiao ; School of physics and Materials Science ; Radiation Detection Materials & Devices Lab ; Anhui University ; School of Sciences ; Anhui University of Science and Technology
- 年：2016
- 作者机构：School of physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University;School of Sciences, Anhui University of Science and Technology;
- 英文论文关键词：High-k gate dielectric ; Atomic-layer-deposition ; Electrical properties ; Carrier transportation mechanism ; Incorporation
- 会议召开时间：2016-10-21
- 会议录名称：安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会论文集
- 语种：英文
- 分类号：O614.413;O646
- 学会代码：AHZK
- 会议名称：安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会
- 会议地点：中国安徽安庆
- 主办单位：安徽省真空学会
- 学会名称：安徽省真空学会
- 页数：15
- 文件大小：1002k
- 原文格式：D
- 会议级别：地方
摘要
Effect of Al_2O_3 incorporation on the electrical properties and carrier transportation of atomic-layer-deposited(ALD) Hf Al O high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of Hf Al O/Si gate stack has been is improved and leakage current is reduced after Al_2O_3 incorporation into HfO_2. Additionally,the Hf Al O/n-Si sample with precursor ratio of 4:2 exhibits the lowest interface charge density( D_(it))of 3.6×10~(11)cm~(-2)e V~(-1), the lowest border trapped oxide charge density( N_(bt)) of 2.4×10~(11)cm~(-2), the lower density of oxide charge( Q_(ox)) of 0.9×10~(12)cm~(-2), and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO_2 and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that that Poole-Frenkle(P-F) emission is main conduction mechanism at the low electric field, and direct tunneling(D-T)dominates the conduction mechanism at the high field, respectively.
Effect of Al_2O_3 incorporation on the electrical properties and carrier transportation of atomic-layer-deposited(ALD) Hf Al O high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of Hf Al O/Si gate stack has been is improved and leakage current is reduced after Al_2O_3 incorporation into HfO_2. Additionally,the Hf Al O/n-Si sample with precursor ratio of 4:2 exhibits the lowest interface charge density( D_(it))of 3.6×10~(11)cm~(-2)e V~(-1), the lowest border trapped oxide charge density( N_(bt)) of 2.4×10~(11)cm~(-2), the lower density of oxide charge( Q_(ox)) of 0.9×10~(12)cm~(-2), and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO_2 and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that that Poole-Frenkle(P-F) emission is main conduction mechanism at the low electric field, and direct tunneling(D-T)dominates the conduction mechanism at the high field, respectively.
Effect of Al_2O_3 incorporation on the electrical properties and carrier transportation of atomic-layer-deposited(ALD) Hf Al O high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of Hf Al O/Si gate stack has been is improved and leakage current is reduced after Al_2O_3 incorporation into HfO_2. Additionally,the Hf Al O/n-Si sample with precursor ratio of 4:2 exhibits the lowest interface charge density( D_(it))of 3.6×10~(11)cm~(-2)e V~(-1), the lowest border trapped oxide charge density( N_(bt)) of 2.4×10~(11)cm~(-2), the lower density of oxide charge( Q_(ox)) of 0.9×10~(12)cm~(-2), and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO_2 and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that that Poole-Frenkle(P-F) emission is main conduction mechanism at the low electric field, and direct tunneling(D-T)dominates the conduction mechanism at the high field, respectively.
引文
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[8]C.Mahata,Y.C.Byun,C.H.An,S.Choi,Y.An,H.Kim,Comparative study of Atomic-Layer-Deposited stacked(Hf O2/Al2O3)and nanolaminated(Hf Al Ox)dielectrics on In Ga0.53As0.47,ACS Appl.Mater.Interfaces 5(2013)4195-4201.
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[11]R.E.Herbert,Y.Hwang,and S.Stemmer,Improved AC conductance and Gray-Brown methods to characterize fast and slowtraps in Ge metal–oxide–semiconductor capacitors,J.Appl.Phys.108,124101(2010).
[12]P.T.Lai,S.Chakraborty,C.L.Chan,Y.C.Cheng,Effects of nitridation and annealing on interface properties of thermally oxidized Si O2/Si C metal–oxide–semiconductor system,Appl.Phys.Lett.76(2000)3744-3746.
[13]K.K.S.Curreem,P.F.Lee,J.Y.Dai,Effects of oxygen partial pressure onstructural and electrical characteristics of Hf Al O high-k gate dielectric grown on strained Si Ge by pulsed-laser deposition,Mater.Sci.Semicond.Process.9(2006)940-944.
[14]H.J.Quah,K.Y.Cheong,Z.Hassan,Z.Lockman,Investigation of forming-gas annealed Ce O2thin film on Ga N,J.Mater.Sci.:Mat.Electron.22(2011)583-591.
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[16]M.H.Zhang,I.J.Ok,H.S.Kim,F.Zhu,T.Lee,G.Thareja,L.Yu,J.C.Lee,Characteristics of sputtered Hf1-XSi XO/Si/Ga As gate stacks,Appl.Phys.Lett.89(2006)042902-1-042902-3.
[17]T.T.Tan,Chemical structure and electrical properties of sputtered Hf O2films on Si substrates annealed by rapid thermal annealing,vacuum83(2009)1155-1158.
[18]Z.Xu,M.Houssa,D.S.Gendt,M.Heyns,Polarity effect on the temperature dependence of leakage current Si O2 gate dielectric stacks through Hf O2,Appl.Phys.Lett.80(2002)1975-1977.
[19]F.C.Chiu,Interface characterization and carrier transportation in metal/Hf O2/silicon structure,J.Appl.Phys.100(2006)114102-1-114102-5.
[20]C.Licitra,E.Martinez,N.Rochat,T.Veyron,H.Grampeix,M.Gely,J.P.Colonna,G.Molas,Coupling of advanced optical and chemical characterization techniques for optimization of high-k dielectrics with nanometer range thickness,AIP Conference Proceedings 931(2007)292-296.
[21]D.K.Schroder,Semiconductor Material and Device Characterization,Wiley,New York,1998.
[22]K.Y.Cheong,J.H.Moon,H.J.Kim,W.Bahng,N.K.Kim,Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide,Appl.Phys.Lett.90(2007)162113-1-162113-3.
[23]R.Puthenkoviakam,M.Sawkar,J.P.Chang,Electrical characteristics of postdepositionannealed Hf O2 on silicon,Appl.Phys.Lett.86(2005)202902-202905.
[24]S.J.Ding,D.W.Zhang,L.K.Wang,Atomic-layer-deposited Al2O3-Hf O2 laminated and sandwiched dielectrics for metal-insulator-metal capacitor,J.Phys.D:Appl.Phys.40(2007)1072-1076.
[25]M.Koike,T.Ino,Y.Kamimuta,Dielectric properties of noncrystalline Hf Si ON,Phys.Rev.B.73(2006)125123-1-125123-6.
[26]J.Kim,S.A.Krishnan,S.Narayanan,M.P.Chudzik,M.V.Fischetti,Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs,Microelectro.Reliab.52(2012)2907-2913.
[27]G.He,L.Q.Zhu,M.Liu,Optical and electrical properties of plasma-oxidation derived Hf O2gate dielectric films,Appl.Surf.Sci.253(2007)3413-3418.
[28]F.C.Chiu,Interface characterization and carrier transportation in metal/Hf O2/silicon structure,J.Appl.Phys.100(2006)114102-1-114102-5.
[29]X.Y.Qiu,G.D.Zhou,J.Li,Y.Chen,X.H.Wang,J.Y.Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded Hf Al Ox films on Si83Ge17/Si substrate,Thin Solid Films 562(2014)674–679.
[30]D.Gitlin,J.Karp,B.Moyzhes,Graded tunnelling barrierandoxygenconcentrationinthermallygrownultrathin Si O2gateoxide,J.Phys.D:Appl.Phys.40(2007)2143-2149.
[31]C.Manfredotti,F.Fizzotti,and G.Amato,Frenkel effect in SIPOS films,physica status solidi(a),108(1)(1988)K25-K30.
[2]S.H.Bae,C.H.Lee,R.Clark,D.L.Kwong,MOS characteristics of ultrathin CVD Hf Al O gate dielectrics,IEEE Electron Device Lett.24(2003)556-558.
[3]M.S.Joo,B.J.Cho,C.C.Yeo,S.S.Chan,S.J.Whoang,S.Mathew,L.K.Bera,D.L.Kwong,Formation of Hafnium-Aluminum-Oxide gate dielectric using single cocktail liquid source in MOCVD process,IEEE Trans.Electron Devices 50(2003)2088-2094.
[4]P.Samanta,C.L.Cheng,Y.J.Lee,M.Chan,Electrical stress-induced charge carrier generation/trapping related and Hf O2/Si O2 gate dielectrics tacks degradation of Hf Al O/Si O2,J.Appl.Phys.105(2009)124507-1-124507-8.
[5]H.Y.Gou,S.Chen,S.J.Ding,Q.Q.Sun,H.L.Lu,D.W Zhang,P.F.Wang,Influence of Hf Al O composition on memory effects of metal-oxide-semiconductor Capacitors with Al2O3/Hf Al O/Al2O3 layers and Pd electrode,Thin Solid Films 529(2013)380–384.
[6]D.Cao,X.H.Cheng,T.T Jia,L.Zheng,D.W Xu,ZJ.Wang,C.Xia,Y.H Yu,Properties of Hf Al O film deposited by plasma enhanced atomic layer deposition,Nulear.Instru.Math.Phys.Res.B307(2013)463–467.
[7]P.S.Dasa,A.Biswas,Improved electrical and interfacial properties of RF-sputtered Hf Al Ox on-Ga As with effective Si passivation,Appl.Sur.Sci.256(2010)6618–6625.
[8]C.Mahata,Y.C.Byun,C.H.An,S.Choi,Y.An,H.Kim,Comparative study of Atomic-Layer-Deposited stacked(Hf O2/Al2O3)and nanolaminated(Hf Al Ox)dielectrics on In Ga0.53As0.47,ACS Appl.Mater.Interfaces 5(2013)4195-4201.
[9]R.L.Puurunen,Surface chemistry of atomic layer deposition:a casestudy for the trimethylaluminum/water process,J.Appl.Phys.97(2005)121301-1-121301-52.
[10]H.Y.Yu,M.F.Li,B.J.Cho,C.C.Yeo,M.S.Joo,D.-L.Kwong,J.S.Pan,C.H.Ang,J.Z.Zheng,and S.Ramanathan,Energy gap and band alignment for(Hf O2)x(Al2O3)1-x on(100)Si,Appl.Phys.Lett.81(2002)376-378.
[11]R.E.Herbert,Y.Hwang,and S.Stemmer,Improved AC conductance and Gray-Brown methods to characterize fast and slowtraps in Ge metal–oxide–semiconductor capacitors,J.Appl.Phys.108,124101(2010).
[12]P.T.Lai,S.Chakraborty,C.L.Chan,Y.C.Cheng,Effects of nitridation and annealing on interface properties of thermally oxidized Si O2/Si C metal–oxide–semiconductor system,Appl.Phys.Lett.76(2000)3744-3746.
[13]K.K.S.Curreem,P.F.Lee,J.Y.Dai,Effects of oxygen partial pressure onstructural and electrical characteristics of Hf Al O high-k gate dielectric grown on strained Si Ge by pulsed-laser deposition,Mater.Sci.Semicond.Process.9(2006)940-944.
[14]H.J.Quah,K.Y.Cheong,Z.Hassan,Z.Lockman,Investigation of forming-gas annealed Ce O2thin film on Ga N,J.Mater.Sci.:Mat.Electron.22(2011)583-591.
[15]L.M.Terman,An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,Solid-State Electron.5(1962)285-299.
[16]M.H.Zhang,I.J.Ok,H.S.Kim,F.Zhu,T.Lee,G.Thareja,L.Yu,J.C.Lee,Characteristics of sputtered Hf1-XSi XO/Si/Ga As gate stacks,Appl.Phys.Lett.89(2006)042902-1-042902-3.
[17]T.T.Tan,Chemical structure and electrical properties of sputtered Hf O2films on Si substrates annealed by rapid thermal annealing,vacuum83(2009)1155-1158.
[18]Z.Xu,M.Houssa,D.S.Gendt,M.Heyns,Polarity effect on the temperature dependence of leakage current Si O2 gate dielectric stacks through Hf O2,Appl.Phys.Lett.80(2002)1975-1977.
[19]F.C.Chiu,Interface characterization and carrier transportation in metal/Hf O2/silicon structure,J.Appl.Phys.100(2006)114102-1-114102-5.
[20]C.Licitra,E.Martinez,N.Rochat,T.Veyron,H.Grampeix,M.Gely,J.P.Colonna,G.Molas,Coupling of advanced optical and chemical characterization techniques for optimization of high-k dielectrics with nanometer range thickness,AIP Conference Proceedings 931(2007)292-296.
[21]D.K.Schroder,Semiconductor Material and Device Characterization,Wiley,New York,1998.
[22]K.Y.Cheong,J.H.Moon,H.J.Kim,W.Bahng,N.K.Kim,Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide,Appl.Phys.Lett.90(2007)162113-1-162113-3.
[23]R.Puthenkoviakam,M.Sawkar,J.P.Chang,Electrical characteristics of postdepositionannealed Hf O2 on silicon,Appl.Phys.Lett.86(2005)202902-202905.
[24]S.J.Ding,D.W.Zhang,L.K.Wang,Atomic-layer-deposited Al2O3-Hf O2 laminated and sandwiched dielectrics for metal-insulator-metal capacitor,J.Phys.D:Appl.Phys.40(2007)1072-1076.
[25]M.Koike,T.Ino,Y.Kamimuta,Dielectric properties of noncrystalline Hf Si ON,Phys.Rev.B.73(2006)125123-1-125123-6.
[26]J.Kim,S.A.Krishnan,S.Narayanan,M.P.Chudzik,M.V.Fischetti,Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs,Microelectro.Reliab.52(2012)2907-2913.
[27]G.He,L.Q.Zhu,M.Liu,Optical and electrical properties of plasma-oxidation derived Hf O2gate dielectric films,Appl.Surf.Sci.253(2007)3413-3418.
[28]F.C.Chiu,Interface characterization and carrier transportation in metal/Hf O2/silicon structure,J.Appl.Phys.100(2006)114102-1-114102-5.
[29]X.Y.Qiu,G.D.Zhou,J.Li,Y.Chen,X.H.Wang,J.Y.Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded Hf Al Ox films on Si83Ge17/Si substrate,Thin Solid Films 562(2014)674–679.
[30]D.Gitlin,J.Karp,B.Moyzhes,Graded tunnelling barrierandoxygenconcentrationinthermallygrownultrathin Si O2gateoxide,J.Phys.D:Appl.Phys.40(2007)2143-2149.
[31]C.Manfredotti,F.Fizzotti,and G.Amato,Frenkel effect in SIPOS films,physica status solidi(a),108(1)(1988)K25-K30.
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