单晶硅表层机械力学特性的各向异性分析
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摘要
为探究挠性筋结构单晶硅材料的各向异性特性以及KOH腐蚀工艺对其力学性能的影响规律,进行纳米压痕实验,并结合原子力显微镜观察单晶硅表层3个主晶面上压痕裂纹形貌随晶向的变化规律,分析单晶硅材料表层弹性模量、硬度、断裂韧性等机械力学特性参数在(001)、(110)及(111)3个主要晶面上沿各个晶向的变化规律;分析挠性筋结构单晶硅材料(001)晶面的KOH腐蚀工艺对其材料表面机械特性的影响规律.结果表明:挠性筋单晶硅在(001)晶面上弹性模量的各向异性变化幅度明显,硬度及断裂韧性各向异性的变化幅度不大;挠性筋单晶硅在(110)晶面弹性模量和断裂韧性的各向异性变化幅度明显,硬度各向异性变化幅度不大;挠性筋单晶硅在(111)晶面硬度值、弹性模量及断裂韧性参数的变化幅度幅值均较小;确定了单晶硅表层3个晶面裂纹最易扩展的晶向方向,KOH腐蚀工艺使得单晶硅表面质量降低,腐蚀后暴露的表面微裂纹、缺陷等会使得单晶硅(001)晶面表层硬度、断裂韧性降低,从而降低了挠性筋结构的实际断裂强度.
To explore the effect of anisotropy and KOH corrosion process on the mechanical properties of monocrystalline silicon flexible rib structure, the morphological changes of indentation-induced cracks with respect to the crystal orientation on the three primary crystal planes were observed by nano-indentation experiments combined with atomic force microscope(AFM). The change rule of elastic modulus, hardness, fracture toughness of monocrystalline silicon on the three primary crystal planes(001),(110) and(111) with respect to crystal orientation was analyzed. Meanwhile, the influence of KOH corrosion process on the surface mechanical properties of(001) crystal plane was investigated as well. The result shows that with the variation of crystal orientation, the elastic modulus on the(001) crystal plane appears the greatest change, while the hardness and fracture toughness have no significant changes. On the(110) crystal plane, both the elastic modulus and fracture toughness show obvious changes, but the hardness possesses no significant change. However, on the(111) crystal plane, the mechanical parameters(including elastic modulus, fracture toughness and hardness) of flexible rib monocrystalline silicon have no obvious anisotropic behaviors. The directions which are sensitive to the crack propagation are determined on the three primary crystal planes of flexible rib monocrystalline silicon. The surface quality of silicon processed by KOH erosion would deteriorate and the exposed surface micro-cracks and defects would result in the decrease of hardness and fracture toughness, which should greatly weaken the actual fracture strength of flexible rib structure.
To explore the effect of anisotropy and KOH corrosion process on the mechanical properties of monocrystalline silicon flexible rib structure, the morphological changes of indentation-induced cracks with respect to the crystal orientation on the three primary crystal planes were observed by nano-indentation experiments combined with atomic force microscope(AFM). The change rule of elastic modulus, hardness, fracture toughness of monocrystalline silicon on the three primary crystal planes(001),(110) and(111) with respect to crystal orientation was analyzed. Meanwhile, the influence of KOH corrosion process on the surface mechanical properties of(001) crystal plane was investigated as well. The result shows that with the variation of crystal orientation, the elastic modulus on the(001) crystal plane appears the greatest change, while the hardness and fracture toughness have no significant changes. On the(110) crystal plane, both the elastic modulus and fracture toughness show obvious changes, but the hardness possesses no significant change. However, on the(111) crystal plane, the mechanical parameters(including elastic modulus, fracture toughness and hardness) of flexible rib monocrystalline silicon have no obvious anisotropic behaviors. The directions which are sensitive to the crack propagation are determined on the three primary crystal planes of flexible rib monocrystalline silicon. The surface quality of silicon processed by KOH erosion would deteriorate and the exposed surface micro-cracks and defects would result in the decrease of hardness and fracture toughness, which should greatly weaken the actual fracture strength of flexible rib structure.
引文
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[2] PANTANO M F,ESPINOSA H D,PAGNOTTA L.Mechanical characterization of materials at small length scales[J].Journal of Mechanical Science and Technology,2012,26(2):545.DOI:10.1007/s12206-011-1214-1
[3] 吕扬.单晶硅晶体特性的压痕仿真与试验研究[D].长春:吉林大学,2013 Lü Yang.The research on FE simulation and experiment of nanoindentation for the crystal characteristics of monocrystal[D].Changchun:Jilin University,2013
[4] PRAMANIK A,ZHANG L C.Residual stresses in silicon-on-sapphire thin film systems[J].International Journal of Solids and Structures,2011,48(9):1290.DOI:10.016/j.ijsolstr.2011.01.010
[5] 余继军.单晶硅材料动态压痕试验系统的建立及试验研究[D].哈尔滨:哈尔滨工业大学,2006 YU Jijun.Establishing of single crystal silicon dynamic indentation experimental system and research[D].Harbin:Harbin Institute of Technology,2006
[6] 赵宏伟,杨柏豪,赵宏建,等.单晶硅纳米力学性能的测试[J].光学精密工程,2009,17(7):1602 ZHAO Hongwei,YANG Baihao,ZHAO Hongjian,et al.Test of nanomechanical properties of single crystal silicon[J].Optics and Precision Engineering,2009,17(7):1602
[7] 韩光平,刘凯,王秀红,等.单晶硅微桥式梁力学性能的弯曲测试[J].仪器仪表学报,2006,27(2):176 HAN Guangping,LIU Kai,WANG Xiuhong,et al.Bending test of single crystal silicon micro-bridge beams for mechanical properties[J].Chinese Journal of Scientific Instrument,2006,27(2):176
[8] LI D,LIANG Y C,BAI Q S,et al.Nano-indentation of single crystal silicon (111) plane by molecular dynamics and experiments[J].Nanotechnology and Precision Engineering,2008,4(4):242
[9] BOUZAKIS K D,MICHAILIDIS N.An accurate and fast approach for determining materials stress-strain curves by nanoindentation and its FEM-based simulation[J].Materials Characterization,2006,56:147.DOI:10.1016/j.matchar.2005.10.005
[10]FANG T H,CHANG W J.Nanoindentation and nanoscratch characteristics of Si and GaAs[J].Microelectronic Engineering,2005,77(3):389.DOI:10.1016/j.mee.2005.01.025.
[11]YONENAGA I,SUZUKI T.Indentation hardnesses of semiconductors and a scaling rule[J].Philosophical Magazine Letters,2002,82(10):535.DOI:10.1080/095008302100 0022288
[12]TAKAHIRO N,YOSHITADA I,TAKESHI T.Plastic deformation of nanometric single crystalsilicon wire in AFM bending test at intermediate temperatures[J].Journal of Microelectro-Mechanical Systems,2002,11(2):125.DOI:10.1109/84.993447
[13]蔡传荣,张琼,叶剑文,等.载荷对单晶硅开裂影响的电镜观察[J].电子显微学报,1998,17(5):531 CAI Chuanrong,ZHANG Qiong,YE Jianwen,et al.SEM observation of load’s effect on monocrystal silicon cracking[J].Journal of Chinese Electron Microscopy Society,1998,17(5):531
[14]YANG X J,ZHANG W X.The research of nano-mechanical properties of mono-crystalline silicon[J].Advanced Materials Research,2013,834:18.DOI:10.4028/www.scientific.net/AMR.834-836.18
[15]ANSTIS G R,CHANTIKUL P.A critical evaluation of indentation techniques for measuring fracture toughness:I,direct crack measurements[J].Journal of the American Ceramic Society,1981,64(9):533.DOI:10.1111/j.1151-2916.1981.tb10320.x
[16]MUKHIYA R,KUMAR A.Static characterization of bulk micromachined accelerometer structure using a nanoindenter[J].Materials Science in Semiconductor Processing,2012,15(4):353.DOI:10.1016/j.mssp.2011.11.002
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