新型研磨垫对单晶氧化镓研磨的实验研究

详细信息    查看全文 | 推荐本文 |

英文篇名：Experimental research on lapping of single crystal gallium oxide with new type lapping pad 作者：龚凯 ; 周海 ; 黄传锦 ; 韦嘉辉 ; 王晨宇 英文作者：Gong Kai;Zhou Hai;Huang Chuanjin;Wei Jiahui;Wang Chenyu;School of Mechanical Engineering,Yancheng Institute of Technology;School of Mechanical Engineering,Jiangsu University;Jiangsu Jeshine New Material Co.,Ltd.; 关键词：研磨垫 ; 单晶氧化镓 ; 研磨 ; 材料去除率 ; 表面质量 英文关键词：lapping pad;;single crystal gallium oxide;;lapping;;material removal rate;;surface quality 中文刊名：XXGY 英文刊名：Modern Manufacturing Engineering 机构：盐城工学院机械工程学院;江苏大学机械工程学院;江苏吉星新材料有限公司; 出版日期：2019-05-18 出版单位：现代制造工程 年：2019 期：No.464 基金：国家自然科学基金项目(51675457);; 江苏省产学研前瞻性创新资金项目(BY2016065-55);; 江苏省科技成果转化项目(BA2015165) 语种：中文; 页：XXGY201905003 页数：5 CN：05 ISSN：11-4659/TH 分类号：19-23

摘要

为抑制氧化镓晶片在研磨过程中的解理现象,通过NAKAMURA的方法,重新设计、研制一种黏弹性固着磨料新型研磨垫对氧化镓晶片进行研磨实验研究,对比分析其与传统铸铁研磨盘对单晶氧化镓研磨的材料去除率和表面质量的影响规律,结果表明:在同一研磨参数下,采用铸铁盘研磨时,晶片材料去除率较高,为358 nm/min,研磨后晶片表面粗糙度Ra由初始的269 nm降低到117 nm,降幅仅为56. 5%;而采用新型研磨垫研磨时,其材料去除率虽较低,为263nm/min,但研磨后晶片表面粗糙度Ra却降低至58 nm,降幅达到78. 4%,晶片表面质量得到明显提高,为后续氧化镓晶片的抛光奠定了良好的基础,因而新型研磨垫更适合对氧化镓进行研磨。同时,也为氧化镓晶片研磨提供了参考依据。
        In order to restrain the cleavage phenomenon of gallium oxide wafer in the lapping process,redesigns and develops a new type of viscoelastic fixing abrasive lapping pad to grind the gallium oxide wafer by NAKAMURA method,and compares it with the traditional cast iron lapping disc on the influence of single crystal gallium oxide material removal rate and surface quality. The result indicates that: under the same lapping parameters,the material removal rate is higher by using the cast iron plate lapping,which is 358 nm/min,but the surface roughness of the wafer reduces from the initial 269 nm to 117 nm,a decline of only56. 5 %; while using a new lapping pad lapping,the material removal rate is low by only 263 nm/min and the surface roughness of the wafer reduces to 58 nm,a decline of 78. 4 %. The wafer surface quality has been significantly improved,which settles a good foundation for the subsequent gallium oxide wafer polishing. So the new type of lapping pad is more suitable for lapping gallium oxide. At the same time,it also provides a reference for gallium oxide wafer lapping.

引文

[1]半导体照明网.日本研制出氧化镓基板白色LED[EB/OL]. http://www. ofweek. com/(Japan Developed the Gallium Oxide Substrate White LED. Semiconductor lighting network. http://www. ofweek. com/).
    [2] LED在线.日本NICT和田村制作所等正式发表使用氧化镓单晶基板的低成本晶体管成果[EB/OL]. http://www.ledinside. cn/news/20120109-18670. html.
    [3]潘继生,阎秋生,李伟.单面研磨6H-SiC单晶片的加工表面性能分析[J].金刚石与磨料磨具工程,2014,34(6):1-6.
    [4]李国明,阎秋生,潘继生.钛酸钡陶瓷基片的双面研抛加工研究[J].金刚石与磨料磨具工程,2015,35(1):11-16.
    [5]范文开,李秀红,李文辉.粘弹性磁性磨具的细观力学数值模拟及实验研究[J].现代制造工程,2014(11):87-90.
    [6] SU J X,ZHANG X M,FU S F,et al. Study on Fixed-Abrasive Lapping Si C Crystal Substrate Based on Diamond Particle[J]. Advanced Materials Research,2014,3410(1017):520-525.
    [7]苏建修,张学铭,万秀颖,等.固着磨料研磨Si C单晶基片(0001)C面研究[J].纳米技术与精密工程,2014(6):417-423.
    [8] KIM H M,MANIVANNAN R,MOON D J,et al. Evaluation of double sided polishing using a fixed abrasive pad for sapphire substrates[J]. Wear of Materials,2013,302(1/2):1340-1344.
    [9] NAKAMURA H,YAN J W,SYOJI K,et al. Development of a Polishing Disc Containing Granulated Fine Abrasives[J].Key Engineering Materials,2003,238-239(6):257-262.
    [10]弭伟. Beta-氧化镓异质外延薄膜的制备及特性研究[D].济南:山东大学,2014.
    [11] DEY M,DEITZEL J M,JR J W G,et al. Influence of sizing formulations on glass/epoxy interphase properties[J]. Composites Part A,2014,63(18):59-67.