磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究（英文）
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摘要
采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性,通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3 V时,整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性,在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间,它能作为一个介于GZO和晶Si之间的缓冲层,能有效地减少GZO和p-Si之间的界面态。因此,我们获得了GZO/CdS/p-Si异质结明显光伏特性。
In this work,Ga doped ZnO( GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural,optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD,SEM,XPS,UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR( IFand IRstand for forward and reverse current,respectively) at ± 3 V is found to be as high as21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic.High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si,it can be used for a buffer layer between GZO and Si,to effectively reduce the interface states between GZO and p-Si. Therefore,we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.
In this work,Ga doped ZnO( GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural,optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD,SEM,XPS,UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR( IFand IRstand for forward and reverse current,respectively) at ± 3 V is found to be as high as21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic.High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si,it can be used for a buffer layer between GZO and Si,to effectively reduce the interface states between GZO and p-Si. Therefore,we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.
引文
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[14]LI L,SHAN C X,LI B H. Light-Harvesting in n-ZnO/p-Silicon Heterojunctions[J]. Journal of ELECTRONIC MATERIALS,2010,39:2467-2470.
[15]Daza1 L G,Martin-Tovar1 E A,Castro-Rodriguez R. AluminumDoped Zinc Oxide Thin Films Deposited on Flexible Cellulose Triacetate Substrates Prepared by RF Sputtering[J]. J Inorg Organomet Polym,2017,27:1563-1571.
[16]Bo He,Jing Xu,HuanPo Ning et al,Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. J. infrared millim. Waves,2017,36(2):139-143.
[2]Shen L,Ma Z Q,Shen C,et al. Studies on fabrication and characterization of a ZnO/p-Si-based solar cell[J]. Superlattices and Microstructures,2010,48:426-433.
[3]Poonam Shokeen,Amit Jain,Avinashi Kapoor,Plasmonic ZnO/p-silicon heterojunction solar cell[J]. Optical Materials,2017,67:32-37.
[4]Bo He,Jing Xu,Huai Zhong Xing,et al. The effect of substrate temperature on high quality c-axis oriented AZO thin films prepared by DC reactive magnetron sputtering for photoelectric device applications[J].Superlattices and Microstructures,2013,64:319-330.
[5]Wang Lia,YingyiLi,GuopingDu. Enhanced electrical and optical properties of boron-doped ZnO films grown by low pressure chemical vapor deposition for amorphous silicon solar cells[J]. Ceramics International,2016,42:1361-1365.
[6]Wen B,Liu C Q,Wang N. Properties of transparent conductive boron-doped ZnO thin films deposited by pulsed DC magnetron sputtering from Zn1-xBxO targets[J]. Applied Physics A,2017,123:211.
[7]Anil Singh,Sujeet Chaudhary,D. K. Pandya,High conductivity indium doped Zn O films by metal target reactive co-sputtering[J]. Acta Materialia,2016 111:1-9.
[8]Hyun-Woo Parka,Kwun-BumChunga,Jin-SeongParkb. Electronic structure of conducting Al-doped Zn O films as a function of Al doping concentration[J]. Ceramics International,2015,41:1641-1645.
[9]ShuqunChen,Michael E. A. Warwick,Effects of film thickness and thermal treatment on thestructural and opto-electronicpr Operties of GadopedZnO films deposited by sol-gel method[J]. Solar Energy Materials&Solar Cells,2015,137:202-209.
[10]Donguk Kim,Young Park,Minha Kim,Optical and structural properties of sputtered CdS films for thin film solar cell applications[J].Materials Research Bulletin,2015,69:78-83.
[11]Bo Liu,Run Luo,Bing Li. Effects of deposition temperature and CdCl2annealing on the CdS thin films prepared by pulsed laser deposition[J]. Journal of Alloys and Compounds,2016,654:333-339.
[12]Sivaraman T,Narasimman V,Nagarethinam V S. Effect of chlorine doping on the structural,morphological,optical and electrical properties of spray deposited CdS thin films[J]. Progress in Natural Science:Materials International,2015,25:392-398.
[13]Abdolahzadeh Ziabari A,Ghodsi F E. Influence of Cu doping and post-heat treatment on the microstructure,optical properties and photoluminescence features of sol–gel derived nanostructured CdS thin films[J]. Journal of Luminescence,2013,141:121-129.
[14]LI L,SHAN C X,LI B H. Light-Harvesting in n-ZnO/p-Silicon Heterojunctions[J]. Journal of ELECTRONIC MATERIALS,2010,39:2467-2470.
[15]Daza1 L G,Martin-Tovar1 E A,Castro-Rodriguez R. AluminumDoped Zinc Oxide Thin Films Deposited on Flexible Cellulose Triacetate Substrates Prepared by RF Sputtering[J]. J Inorg Organomet Polym,2017,27:1563-1571.
[16]Bo He,Jing Xu,HuanPo Ning et al,Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. J. infrared millim. Waves,2017,36(2):139-143.
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