激光二极管触发GaAs光导开关导通特性
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摘要
基于固态平板传输线、同轴电缆、GaAs光导开关和激光二极管触发系统,设计了两种脉冲形成线电路结构,研究了激光二极管触发条件下的GaAs光导开关的导通特性:基于GaAs光导开关的固态Blumlein脉冲形成线可输出具有快前沿的高功率、窄脉冲电压;给出了测量光导开关抖动和导通电阻的方法,测得光导开关的抖动、导通电阻都随激光能量和充电电压的增大而减小,其最小抖动约0.12ns,导通电阻为欧姆量级;测得光导开关导通电流约250～300A(平板传输线特征阻抗Z0=25?),并探索了光导开关并联分流的可行性;测量出光导开关的导通时间约0.4～0.6ns,随工作次数的增多,导通时间逐渐增大。
Based on solid-state planar transmission lines, coaxial transmission lines, GaAs photoconductive semiconductor switches(PCSS) and laser diode triggers, two types of pulse forming lines were designed to study the on-state properties of GaAs PCSS triggered by laser diode. The solid-state Blumlein pulse forming lines based on GaAs PCSS could output a high-power pulse voltage with short duration and rising time. The methods of measurement about the time jitter and on-state resistance are presented, and both the time jitter and on-state resistance of GaAs PCSS decrease as the laser energy and input voltage increase. It is measured that the minimum switch's jitter is 0.12 ns, and on-state resistance is in an order of ohms magnitude. The on-state current of GaAs PCSS is about 250～300 A(Z0=25 ?), which can be shunted by using two GaAs PCSS in parallel. The on-state time is measured to be 0.4～0.6 ns, and increases with the shot accumulating.
Based on solid-state planar transmission lines, coaxial transmission lines, GaAs photoconductive semiconductor switches(PCSS) and laser diode triggers, two types of pulse forming lines were designed to study the on-state properties of GaAs PCSS triggered by laser diode. The solid-state Blumlein pulse forming lines based on GaAs PCSS could output a high-power pulse voltage with short duration and rising time. The methods of measurement about the time jitter and on-state resistance are presented, and both the time jitter and on-state resistance of GaAs PCSS decrease as the laser energy and input voltage increase. It is measured that the minimum switch's jitter is 0.12 ns, and on-state resistance is in an order of ohms magnitude. The on-state current of GaAs PCSS is about 250～300 A(Z0=25 ?), which can be shunted by using two GaAs PCSS in parallel. The on-state time is measured to be 0.4～0.6 ns, and increases with the shot accumulating.
引文
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[13]赵越,谢卫平,李洪涛,等.影响高功率光导开关临界频率热因素的数值分析[J].强激光与粒子束,2010,22(11):2778-2782.ZHAO Yue,XIE Weiping,LI Hongtao,et al.Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch[J].High Power Laser and Particle Beams,2010,22(11):2778-2782.
[2]袁建强,刘宏伟,马勋,等.基于光导开关的固态脉冲功率源及其应用[J].高电压技术,2015,41(6):1807-1817.YUAN Jianqiang,LIU Hongwei,MA Xun,et al.Development and application of solid state pulsed power generators based on photoconductive semiconductor switches[J].High Voltage Engineering,2015,41(6):1807-1817.
[3]杨宏春,崔海娟,孙云卿,等.高功率长寿命Ga As光电导开关[J].科学通报,2010,55(16):1618-1625.YANG Hongchun,CUI Haijun,SUN Yunqin,et al.High power,longevity gallium arsenide photoconductive semicon-ductor switches[J].Chinese Science Bulletin,2010,55(16):1331-1337.
[4]LEE C H.Picosecond optoelectronic switching in Ga As[J].Applied Physics Letters,1977,30(2):84-86.
[5]EL AMARI S,DE ANGELIS A,ARNAUD-CORMOS D,et al.Characterization of a linear photoconductive switch used in nanosecond pulsed electric field generator[J].IEEE Photonics Technology Letters,2011,23(11):673-675.
[6]LOUBRIEL G M,O’MALLEY M W,ZUTAVERN F J.Toward pulsed power uses for photoconductive semiconductor switches:closing switches[C]∥6th IEEE Pulsed Power Conference.Arlington,USA:IEEE,1987:145-148.
[7]PARTAIN L,DAY D,POWELL R.Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches[J].Journal of Applied Physics,1993,74(1):335-340.
[8]章林文,夏连胜,谌怡,等.介质壁加速器关键技术[J].高电压技术,2015,41(6):1769-1775.ZHANG Linwen,XIA Liansheng,SHEN Yi,et al.Technologies of dielectric wall accelerator[J].High Voltage Engineering,2015,41(6):1769-1775.
[9]MAR A,LOUBRIEL G M,ZUTAVERN F J,et al.Fireset applications of improved longevity optically activated GaAs photoconductive semiconductor switches[C]//Pulsed Power Plasma Science,2001.[s.n.]:IEEE,2001:166-169.
[10]SHI W,JIANG H,LI M,et al.Investigation of electric field threshold of Ga As photoconductive semiconductor switch triggered by 1.6μJlaser diode[J].Applied Physics Letters,2014,104(4):042108.
[11]WANG W,XIA L S,CHEN Y,et al.Research on synchronization of15 parallel high gain photoconductive semiconductor switches triggered by high power laser diodes[J].Applied Physics Letters,2015,106(2):022108.
[12]谌怡,刘毅,陈莹,等.介质壁加速器用固态脉冲形成线设计与实验[J].强激光与粒子束,2014,26(10):105102.SHEN Yi,LIU Yi,CHEN Ying,et al.Design and experiments of solid-state pulse forming lines for dielectric wall accelerator[J].High Power Laser and Particle Beams,2014,26(10):105102.
[13]赵越,谢卫平,李洪涛,等.影响高功率光导开关临界频率热因素的数值分析[J].强激光与粒子束,2010,22(11):2778-2782.ZHAO Yue,XIE Weiping,LI Hongtao,et al.Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch[J].High Power Laser and Particle Beams,2010,22(11):2778-2782.
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