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Numerical Study on the Thermal Stress and its Formation Mechanism of a Thermoelectric Device
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  • 英文篇名:Numerical Study on the Thermal Stress and its Formation Mechanism of a Thermoelectric Device
  • 作者:PAN ; Tao ; GONG ; Tingrui ; YANG ; Wei ; WU ; Yongjia
  • 英文作者:PAN Tao;GONG Tingrui;YANG Wei;WU Yongjia;Product Engineering Department,Wuhan Branch of SAIC-GM ltd;Microsystem and Terahertz Research Center, China Academy of Engineering Physics;Institute of Electronic Engineering, China Academy of Engineering Physics;Hubei Institute of Aerospace Chemical Technology;School of Mechanical Engineering, Virginia Polytechnic Institute and State University;
  • 英文关键词:Solar Thermoelectric Power Generator;;Thermal Stress;;Thermal Radiation;;Numerical Simulation
  • 中文刊名:RKXY
  • 英文刊名:热科学学报(英文版)
  • 机构:Product Engineering Department,Wuhan Branch of SAIC-GM ltd;Microsystem and Terahertz Research Center, China Academy of Engineering Physics;Institute of Electronic Engineering, China Academy of Engineering Physics;Hubei Institute of Aerospace Chemical Technology;School of Mechanical Engineering, Virginia Polytechnic Institute and State University;
  • 出版日期:2018-05-15
  • 出版单位:Journal of Thermal Science
  • 年:2018
  • 期:v.27
  • 基金:financially supported by the Science Challenge Project(Grant No.TZ2018003)
  • 语种:英文;
  • 页:RKXY201803007
  • 页数:10
  • CN:03
  • ISSN:11-2853/O4
  • 分类号:57-66
摘要
The strong thermo-mechanical stress is one of the most critical failure mechanisms that affect the durability of thermoelectric devices. In this study, numerical simulations on the formation mechanism of the maximum thermal stress inside the thermoelectric device have been performed by using finite element method. The influences of the material properties and the thermal radiation on the thermal stress have been examined. The results indicate that the maximum thermal stress was located at the contact position between the two materials and occurred due to differential thermal expansions and displacement constraints of the materials. The difference in the calculated thermal stress value between the constant and the variable material properties was between 3% and 4%. At a heat flux of 1 W·cm~(-2) and an emissivity of 0.5, the influence of the radiation heat transfer on the thermal stress was only about 5%; however, when the heat flux was 20 W·cm~(-2) and the emissivity was 0.7, the influence of the radiation heat transfer was more than 30%.
        The strong thermo-mechanical stress is one of the most critical failure mechanisms that affect the durability of thermoelectric devices. In this study, numerical simulations on the formation mechanism of the maximum thermal stress inside the thermoelectric device have been performed by using finite element method. The influences of the material properties and the thermal radiation on the thermal stress have been examined. The results indicate that the maximum thermal stress was located at the contact position between the two materials and occurred due to differential thermal expansions and displacement constraints of the materials. The difference in the calculated thermal stress value between the constant and the variable material properties was between 3% and 4%. At a heat flux of 1 W·cm~(-2) and an emissivity of 0.5, the influence of the radiation heat transfer on the thermal stress was only about 5%; however, when the heat flux was 20 W·cm~(-2) and the emissivity was 0.7, the influence of the radiation heat transfer was more than 30%.
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