激光烧蚀硅靶下荷电粒子和纳米晶粒的电流响应研究
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摘要
采用波长为308 nm的XeCl脉冲准分子激光器,在5~50 Pa的Ar气压下烧蚀高阻抗单晶硅(Si)靶。在烧蚀点正前方、距靶1.5 cm处放置一个中心开孔直径为2 mm的挡板,挡板后面上下对称放置两个极板,然后串联一个标准电阻接地,电阻大小为10Ω,利用高分辨数字存储示波器记录并测量回路中产生的瞬间电流来研究荷电粒子和纳米晶粒的电流响应。实验结果表明烧蚀产物中的正离子在气压为5 Pa时到达极板上数量最多。纳米Si晶粒带正电并且随着气压的增加纳米Si晶粒下落到极板的数量呈现先增大后减小趋势,在气压为8 Pa时达到最大值,这与扫描电子显微镜的测量结果基本一致。所得结果为进一步研究烧蚀粒子在环境气体中的输运动力学过程提供了依据。
The high resistivity single crystalline Si target was ablated by a XeCl pulsed excimer laser(wavelength 308 nm)at the ambient pressure of 5-50 Pa of pure argon gas.A baffle with 2 mm aperture in the center was placed in front of the ablation dot with the distance of 1.5 cm.Two electrode plates were horizontally symmetrical placed behind the baffle.The underlaid electrode connecting a 10 Ωstandard resistor was earthed.The electric current responsivity was studied by using a high resolution oscilloscope to record and measure the instantaneous current in the loop.The result shows that the number of positive ion arriveing the electrode plates is the largest at the pressure of 5 Pa.The Si nanocrystal particles are positive charged.The number of Si nanocrystal particles first increases and then decreases with the ambient pressure increasing and it reaches a maximum at the pressure of 8 Pa.It is consistent with the results of scanning electron microscopy measure.These results provide foundation for the further investigation of the transport dynamics of the ablated particles in ambient gases by pulsed laser deposition.
The high resistivity single crystalline Si target was ablated by a XeCl pulsed excimer laser(wavelength 308 nm)at the ambient pressure of 5-50 Pa of pure argon gas.A baffle with 2 mm aperture in the center was placed in front of the ablation dot with the distance of 1.5 cm.Two electrode plates were horizontally symmetrical placed behind the baffle.The underlaid electrode connecting a 10 Ωstandard resistor was earthed.The electric current responsivity was studied by using a high resolution oscilloscope to record and measure the instantaneous current in the loop.The result shows that the number of positive ion arriveing the electrode plates is the largest at the pressure of 5 Pa.The Si nanocrystal particles are positive charged.The number of Si nanocrystal particles first increases and then decreases with the ambient pressure increasing and it reaches a maximum at the pressure of 8 Pa.It is consistent with the results of scanning electron microscopy measure.These results provide foundation for the further investigation of the transport dynamics of the ablated particles in ambient gases by pulsed laser deposition.
引文
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[2]Yoshida T,Takeyama S,Yamada Y,et al.Nanometer-sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas[J].Appl.Phys.Lett.,1996,68:1772-1774.
[3]Masini G,Colace L,Assanto G.Si Based Optoelectronics For Communications[J].Mater.Sci.Eng.B.,2002,89(s1-3):2-9.
[4]Ouyang Z,Pillai S,Beck F,et al.Effective Light Trapping in Polycrystalline Silicon Thin-film Solar Cells by Means of Rear Localized Surface Plasmons[J].Appl.Phys.Lett.,2010,96(26):261109-1-3.
[5]Vach H,Brulin Q.Controlled Growth of Silicon Nanocrystals in a Plasma Teactor[J].Phys.Rev.Lett.,2005,95(16):5502.
[6]Wang Y L,Deng Z C,Chu L Z,et al.The Difference of Energies of Si Atoms with Single-crystalline,Amorphous,Free and Nanoparticle Configurations[J].Euro.Phys.Lett.,2009,86:15001.
[7]褚立志,邓泽超,丁学成,等.Ar环境气压对纳米Si晶粒成核区范围的影响[J].物理学报,2012,61(10):1081022012.
[8]王英龙,高建聪,褚立志,等.低压环境中外加氩气流对激光沉积纳米硅晶粒尺寸及分布的影响[J].人工晶体学报,2012,41(5):1211-1215.
[9]Wang Y L,Zhang H S,Chu L Z,et al.Simulation of the Initial Polarization Curves and Hysteresis Loops for Ferroelectric Films by an Extensive Time-dependent Ginzburg Landau Model[J].Journal of Materials Science,2011,46(8):2695-2699.
[10]Muramoto J,Sakamoto I,Nakata Y,et al.Influence of Electric Field on the Behavior of Si Nanoparticles Generated by Laser Ablation[J].Appl.Phys.Lett.,1999,75(6):751-753.
[11]Seto T,Kawakami Y,Suzuki N,et al.Laser Synthesis of Uniform Silicon Single Nanodots[J].Nano Letters,2001,1(6):315-318.
[12]Wang Y L,Zhou Y,Chu L Z,et al.Influence of the Ambient Pressure of Ar on the Average Size of Si Nanoparticles Deposited by Pulsed Laser Ablation[J].Journal of Materials Engineering,2005,54(4):1683-1686.
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