Resistive switching behavior of Ag/Mg_0.2Zn_0.8O/ZnMn₂O₄/p⁺-Si heterostructure devices for nonvolatile memory applications

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• 作者：Changcheng Wei 韦长成 ; Hua Wang 王华 ; Jiwen Xu…
• 关键词：Key wordsheterostructure ; Ag/Mg0.2Zn0.8O/ZnMn2O4/p+ ; Si ; devices ; resistive switching properties
• 刊名：Journal of Wuhan University of Technology-Mater. Sci. Ed.
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：32
• 期：1
• 页码：29-32
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Materials Science, general;
• 出版者：Wuhan University of Technology
• ISSN：1993-0437
• 卷排序：32

文摘

The Ag/Mg_0.2Zn_0.8O/ZnMn₂O₄/p+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior, conduction mechanism, endurance characteristic, and retention properties were investigated. A distinct bipolar resistive switching behavior of the devices was observed at room temperature. The resistance ratio R_HRS/R_LRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V. The dominant conduction mechanism of the device is trap-controlled space charge limited current (SCLC). The devices exhibit good durability under 1×103 cycles and the degradation is invisible for more than 106 s.