Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer

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• 作者：Qiu-lin Wei 魏秋林 ; Zuo-xing Guo 郭作兴 ; Lei Zhao 赵磊 ; Liang Zhao 赵亮…
• 刊名：Optoelectronics Letters
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：12
• 期：6
• 页码：441-445
• 全文大小：645 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Applied Optics, Optoelectronics and Optical Devices
  Chinese Library of Science
  
• 出版者：Tianjin University of Technology, co-published with Springer-Verlag GmbH
• ISSN：1993-5013
• 卷排序：12

文摘

Microstructure and misfit dislocation behavior in In_xGa_1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_0.82Ga_0.18As/InP heterostructure, the In_xGa_1-xAs buffer layer was grown. The residual strain of the In_0.82Ga_0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium (In) content In_0.82Ga_0.82As epitaxial layer has significant influence on the carrier concentration.