Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5

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• 作者：M. B. Sreedhara ; J. Ghatak ; B. Bharath ; C. N. R. Rao
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：January 25, 2017
• 年：2017
• 卷：9
• 期：3
• 页码：3178-3185
• 全文大小：665K
• ISSN：1944-8252

文摘

Ultrathin epitaxial films (10–90 nm thick) of V₂O₅ have been grown on c-Al₂O₃ by atomic layer deposition using vanadyl acetylacetonate as the vanadium precursor along with oxygen plasma. Various process parameters have been optimized for the purpose, and excellent crystalline films could be obtained below 200 °C, without the need for post-heat treatment. With a moderate temperature window, the process yields a growth rate of 0.45 Å/cycle. The films have been characterized by electron microscopy, atomic force microscopy, Raman spectroscopy, and other means. The films exhibit a (001) preferred orientation with respect to c-Al₂O₃ and undergo compressive strain at the initial few monolayer growth to adjust epitaxially with the substrate. Heterojunction diodes based on TiO₂(p)–(n)V₂O₅ as well as a humidity sensor have been fabricated using the V₂O₅ films.