Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe2

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• 作者：Sun Young Choi ; Yonghun Kim ; Hee-Suk Chung ; Ah Ra Kim ; Jung-Dae Kwon ; Jucheol Park ; Young Lae Kim ; Se-Hun Kwon ; Myung Gwan Hahm ; Byungjin Cho
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：February 1, 2017
• 年：2017
• 卷：9
• 期：4
• 页码：3817-3823
• 全文大小：533K
• ISSN：1944-8252

文摘

Here, we report that Nb doping of two-dimensional (2D) MoSe₂ layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, Nb atoms were incorporated into a 2D MoSe₂ host matrix, and the Nb doping concentration could be precisely controlled by varying the number of Nb₂O₅ deposition cycles in the plasma enhanced atomic layer deposition process. At relatively low Nb dopant concentrations, MoSe₂ showed enhanced device durability as well as NO₂ gas response, attributed to its small grains and stabilized grain boundaries. Meanwhile, an increase in the Nb doping concentration deteriorated the NO₂ gas response. This might be attributed to a considerable increase in the number of metallic NbSe₂ regions, which do not respond to gas molecules. This novel method of doping 2D transition metal dichalcogenide-based nanomaterials with metal atoms is a promising approach to improve the performance such as stability and gas response of 2D gas sensors.