Quantum Transport in Gated Dangling-Bond Atomic Wires

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• 作者：S. BohloulQ. Shi ; Robert A. Wolkow ; Hong Guo
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：January 11, 2017
• 年：2017
• 卷：17
• 期：1
• 页码：322-327
• 全文大小：504K
• ISSN：1530-6992

文摘

A single line of dangling bonds (DBs) on Si(100)-2 × 1:H surface forms a perfect metallic atomic-wire. In this work, we investigate quantum transport properties of such dangling bond wires (DBWs) by a state-of-the-art first-principles technique. It is found that the conductance of the DBW can be gated by electrostatic potential and orbital overlap due to only a single DB center (DBC) within a distance of ∼16 Å from the DBW. The gating effect is more pronounced for two DBCs and especially, when these two DB “gates” are within ∼3.9 Å from each other. These effective length scales are in excellent agreement with those measured in scanning tunnelling microscope experiments. By analyzing transmission spectrum and density of states of DBC–DBW systems, with or without subsurface doping, for different length of the DBW, distance between DBCs and the DBW, and distance between DB gates, we conclude that charge transport in a DBW can be regulated to have both an on-state and an off-state using only one or two DBs.