文摘
Solution processing of semiconductor nanocrystal (NC) solids represents an attractive platform for the development of next-generation optoelectronic devices. In search of enhanced light-emitting performance, NC solids are typically designed to have large interparticle gaps that minimize exciton diffusion to dissociative sites. This strategy, however, reduces electrical coupling between nanoparticles in a film, making the injection of charges inefficient. Here, we demonstrate that bright emission from nanocrystal solids can be achieved without compromising their electrical conductivity. Our study shows that solids featuring a low absorption-emission spectral overlap (J) exhibit an intrinsically slower exciton diffusion to recombination centers, promoting longer exciton lifetimes. As a result, enhanced emission is achieved despite a strong electronic coupling. The observed phenomenon was found consistent with a decreased resonant energy transfer in films exhibiting a reduced J value. The inverse correlation between film luminescence and J was revealed through a comparative analysis of CdSe/CdS and ZnSe/CdS solids and further confirmed in two control systems (ZnTe/CdSe and Mn2+-doped ZnCdSe/ZnS). Exceptionally slow exciton diffusion (∼0.3 ms) and high brightness were observed for Mn2+-doped Zn1–xCdxSe/ZnS NC films exhibiting a nearly vanishing J parameter. We expect that the demonstrated combination of electrical coupling and bright emission in nanocrystal solids featuring low J can benefit the development of nanocrystal light-emitting technologies.