Stable, Fast UV–Vis–NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap

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• 作者：Jiandong Yao ; Zexiang Deng ; Zhaoqiang Zheng ; Guowei Yang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 17, 2016
• 年：2016
• 卷：8
• 期：32
• 页码：20872-20879
• 全文大小：551K
• 年卷期：0
• ISSN：1944-8252

文摘

Photoelectric conversion is of great importance to extensive applications. However, thus far, photodetectors integrated with high responsivity, excellent detectivity, large phototo-dark current ratio, fast response speed, broad spectral range, and good stability are rarely achieved. Herein, we deposited large-scale and high-quality polycrystalline indium sesquitelluride (α-In₂Te₃) films via pulsed-laser deposition. Then, we demonstrated that the photodetectors made of the prepared α-In₂Te₃ films possess stable photoswitching behavior from 370 to 1064 nm and short response time better than ca. 15 ms. At a source-drain voltage of 5 V, the device achieves a high responsivity of 44 A/W, along with an outstanding detectivity of 6 × 10¹² cm H^1/2 W^–1 and an excellent sensitivity of 2.5 × 10⁵ cm²/W. All of these figures-of-merit are the best among those of the reported α-In₂Te₃ photodetectors. In fact, they are comparable to the state-of-the-art commercial Si and Ge photodetectors. For the first time, we established the theoretical evidence that α-In₂Te₃ possesses a direct bandgap structure, which reasonably accounts for the superior photodetection performances above. Importantly, the device exhibits a good stability against the multiple photoswitching operation and ambient environment, along with no obvious voltage-scan hysteresis. These excellent figures-of-merit, together with the broad spectral range and good stability, underscore α-In₂Te₃ as a promising candidate material for next-generation photodetection.