Improving Charge Mobility of Polymer Transistors by Judicious Choice of the Molecular Weight of Insulating Polymer Additive

详细信息    查看全文

• 作者：Huihuang Yang ; Guocheng Zhang ; Jie Zhu ; Weixin He ; Shuqiong Lan ; Lei Liao ; Huipeng Chen ; Tailiang Guo
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：August 11, 2016
• 年：2016
• 卷：120
• 期：31
• 页码：17282-17289
• 全文大小：462K
• 年卷期：0
• ISSN：1932-7455

文摘

In this work, we have carefully examined the morphology of semiconducting polymer:insulating polymer blends, which were deposited from inkjet printing. We attempted to study the impact of molecular weight (MW) of insulating polymer on the nanoscale morphology and function of the blends. The morphology of all of the inkjet-printed samples was characterized by small-angle neutron scattering (SANS), grazing incidence X-ray diffraction (GIXD), and atomic force microscopy (AFM). The SANS results show that the domain size of the blends increases by increasing the MW of insulating polymer, while the domain purity reaches the maximum with proper molecular weight of insulating polymer. AFM images show that the connectivity of semiconducting polymer domains is disrupted with addition of polystyrene (PS) with low molecular weight (M_w = 2.5K and 20K), while well-interconnected domains are observed with addition of PS with high molecular weight (M_w = 182K and 2000K). GIXD results indicate that the π–π stacking distance of semiconducting polymer can be shortened with addition of PS and decreases with an increase of PS molecular weight from 2.5K to 182K. Further increasing molecular weight of PS to 2000K results in very weak π–π stacking ordering. This work demonstrates that the domain purity, connectivity of semiconducting polymer domains, and molecular packing are crucial for the charge transport. The judicious choice of the MW of insulating polymer could carefully control the nanoscale morphology of semiconducting polymer:insulating polymer blends, which could provide blend morphology with high domain purity, well-connected domains, along with reduced π–π stacking distance, all of which facilitate charge transport, resulting in a significant improvement of charge mobility.