High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors

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• 作者：Felix Jaehnike ; Duy Vu Pham ; Ralf Anselmann ; Claudia Bock ; Ulrich Kunze
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：July 1, 2015
• 年：2015
• 卷：7
• 期：25
• 页码：14011-14017
• 全文大小：373K
• ISSN：1944-8252

文摘

A silicon oxide gate dielectric was synthesized by a facile sol鈥揼el reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiO_x sol鈥揼el was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 掳C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10聽nA/cm² at 1 MV/cm) to thermally grown silicon dioxide (SiO₂). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO₂. Both transistor types have field-effect mobility values as high as 28 cm²/(Vs) with an on/off current ratio of 10⁸, subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol鈥揼el-derived SiO₂ is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.