In-Doped Gallium Oxide Micro- and Nanostructures: Morphology, Structure, and Luminescence Properties

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• 作者：I帽aki L贸pez ; Antonio D. Utrilla ; Emilio Nogales ; Bianchi M茅ndez ; Javier Piqueras ; Andrea Peche ; J. Ram铆rez-Castellanos ; Jose M. Gonz谩lez-Calbet
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：February 16, 2012
• 年：2012
• 卷：116
• 期：6
• 页码：3935-3943
• 全文大小：594K
• 年卷期：v.116,no.6(February 16, 2012)
• ISSN：1932-7455

文摘

The influence of indium doping on morphology, structural, and luminescence properties of gallium oxide micro- and nanostructures is reported. Indium-doped gallium oxide micro- and nanostructures have been grown by thermal oxidation of metallic gallium in the presence of indium oxide. The dominant morphologies are beltlike structures, which in many cases are twisted leading to springlike structures, showing that In diffusion in Ga₂O₃ influences the microstructure shapes. High-resolution transmission electron microscopy has revealed the presence of twins in the belts, and energy-dispersive X-ray spectroscopy in the scanning electron microscopy (SEM) has detected a segregation of indium impurities at the edges of planar structures. These results suggest that indium plays a major role in the observed morphologies and support the assumption of a layer by layer model as growth mechanism. An additional assessment of indium influence on the defect structure has been performed by cathodoluminescence in the SEM, X-ray photoelectron microscopy, and spatially resolved Raman spectroscopy.