Stretched Contact Printing of One-Dimensional Nanostructures for Hybrid Inorganic鈥揙rganic Field Effect Transistors

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• 作者：Gen-Wen Hsieh ; JinJin Wang ; Ken Ogata ; John Robertson ; Stephan Hofmann ; William I. Milne
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：March 29, 2012
• 年：2012
• 卷：116
• 期：12
• 页码：7118-7125
• 全文大小：523K
• 年卷期：v.116,no.12(March 29, 2012)
• ISSN：1932-7455

文摘

We demonstrate a stretched contact printing technique to assemble one-dimensional nanostructures with controlled density and orientation from either dry or wet sources. The random, chaotically arranged nanostructures can gradually transform to a highly aligned configuration. Our results show that up to 90% of the printed nanowires are aligned within 卤15掳 of the primary stretching direction. This approach is easily applicable to a variety of nanowires and nanotubes on different substrates, and we demonstrate various field effect transistors with nanowire and hybrid nanowire鈥損olymer networks. The hybrid inorganic鈥搊rganic transistors based on a parallel aligned nanowire network and a semiconducting polymer revealed a significant enhancement in transistor mobility, a 10-fold reduction in subthreshold slope (0.26 V decade^鈥?), and superior air stability compared to a pristine polymer host.