The Chemistry of Imperfections in N-Graphene

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• 作者：Dmitry Usachov ; Alexander Fedorov ; Oleg Vilkov ; Boris Senkovskiy ; Vera K. Adamchuk ; Lada V. Yashina ; Andrey A. Volykhov ; Mani Farjam ; Nikolay I. Verbitskiy ; Alexander Gr眉neis ; Clemens Laubschat ; Denis V. Vyalikh
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：September 10, 2014
• 年：2014
• 卷：14
• 期：9
• 页码：4982-4988
• 全文大小：381K
• ISSN：1530-6992

文摘

Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.

Keywords:

Graphene; nitrogen doping; electronic structure; XPS; ARPES