Transformation from ε-FeSi to β- FeSi₂ in RF-sputtered FeSi_x films

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• 作者：Naoki Kawabata^a ; Kazuhiro Nakamura ; ^a ; ^{knaka@kansai-u.ac.jp}
• 关键词：Iron disilicide ( ; none ; color ; black"" href=""/science?_ob=MathURL&_method=retrieve&_udi=B8JJ4-524GNNT-G&_mathId=mml11&_user=10&_cdi=43716&_pii=S187538921100037X&_rdoc=22&_issn=18753892&_acct=C000060114&_version=1
• 刊名：Physics Procedia
• 出版年：2011
• 出版时间：2011
• 年：2011
• 卷：11
• 期：Complete
• 页码：87-90
• 全文大小：402 K

文摘

FeSi_x films were deposited on Si (100) substrates using RF sputtering at room temperature and at 300 °C. After deposition, FeSi_x films were annealed at 400–900 °C in Ar ambient. XRD measurements revealed that the FeSi_x films deposited at R. T. for 30 min were completely transformed to β-phase due to annealing at 900 °C for 1 h. On the contrary, the FeSi_x films deposited at 300 °C for 30 min contained both ε-FeSi and β- FeSi₂ after annealing at 900 °C for 1 h. The FeSi_x films deposited at 300 °C for 3 min were completely transformed to β-phase due to annealing at 800 °C for 1 h. For the FeSi_x films deposited at 300 °C for 30 min, ε-FeSi transformed to β- FeSi₂ in RF-sputtered films due to long time annealing of 10 h. It can be concluded that high-temperature and long-time annealing is necessary for the ε-FeSi bonds in the FeSi_x films to decompose and for the Fe atoms to be diffused into Si substrates leaving only β-phase FeSi₂ in the films.