Three-step vapor Se/N2/vapor Se reaction of electrodeposited Cu/In/Ga precursor for preparing CuInGaSe2 thin films
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- 作者：Jinlian Bia ; Jianping Aoa ; Aojp@nankai.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Ming-Jer Jengb ; c ; Liyong Yaoa ; Shoushuai Gaoa ; Guozhong Suna ; Qing Hea ; Zhiqiang Zhoua ; Yun Suna ; Yu-Ling Xiaob ; Liann-Be Changb ; c
- 关键词：Cu(In ; Ga)Se2 ; Electrodeposition ; Selenization ; Solar cell
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：352-361
- 全文大小：3830 K
文摘
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Solid Se source is used to provide Se atmosphere for selenizing Cu/In/Ga precursors.
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Three-step reaction has been used to solve the common issue of Ga accumulation.
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Selenization without CuGaSe2 phase formation in the first step favors the Ga diffusion.
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Ga re-diffusion and significant grain growth happened during the second step.
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