薄膜厚度对FeZrBNb单层膜巨磁阻抗效应的影响
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摘要
用射频溅射法制备了FeZrBNb合金薄膜,研究薄膜厚度对巨磁阻抗效应的影响。结果表明,适当增大薄膜的厚度可以降低薄膜样品的临界频率,提高阻抗比。频率为13MHz时,厚度为10.8μm的薄膜样品的最大纵向阻抗比达到了5.9%,高于3.5μm的薄膜样品(最大纵向阻抗比为1.9%);而临界频率为400kHz,远低于薄膜厚度为3.5μm的样品(临界频率为1.3MHz)。
The FeZrBNb soft magnetic alloy films were deposited by radio frequency sputtering on the substrate of single crystal Si.Giant magneto-impedance(GMI) effect was investigated in different thickness FeZrBNb single films.The results show that increasing the thickness of the film can reduce the critical frequency,improve the GMI ratios.The maximum values of longitudinal GMI ratios are 5.9% and 1.9% for 10.8μm and 3.5μm thin films,respectively,at the frequency of 13MHz.The critical frequencies are 400kHz and 1.3MHz for 10.8μm and 3.5μm thin films,respectively.
The FeZrBNb soft magnetic alloy films were deposited by radio frequency sputtering on the substrate of single crystal Si.Giant magneto-impedance(GMI) effect was investigated in different thickness FeZrBNb single films.The results show that increasing the thickness of the film can reduce the critical frequency,improve the GMI ratios.The maximum values of longitudinal GMI ratios are 5.9% and 1.9% for 10.8μm and 3.5μm thin films,respectively,at the frequency of 13MHz.The critical frequencies are 400kHz and 1.3MHz for 10.8μm and 3.5μm thin films,respectively.
引文
[1]Mohri K,Kohzawa T,Kawashima K,Yoshida H andPanina L V.Magneto-inductive effect in amorphouswires.[J]IEEE Trans Magn.1992,28(5).
[2]Sommer R L,Chien C L.Longitudinal and transversemagneto-impedance in amorphous FeCuNbSiB films.[J]Appl.Phys.Lett.1995,67(22).
[3]Suzuki K et al.High Saturation Magnetization and SoftMagnetic Properties of bcc Fe-Zr-B and Fe-Zr-B-M(M=Transition Metal)Alloys with NanoscaleGrain Size.[J]Mater Trans JIM.1991,32(1).
[4]周勇,丁文,陈吉安,高孝裕,王明军,张亚民.薄膜厚度对多层膜巨磁阻抗效应的影响研究[J]功能材料与器件学报.2004,10(2).
[5]葛副鼎,库万军,朱静.软磁薄带巨磁阻抗效应的数值分析[J]功能材料与器件学报.1997,3(4).
[6]王宗篪.纵向驱动巨磁阻抗效应的解释[J]集美大学学报.2002,7(1).
[7]陈卫平,冯尚申,邵先亦,萧淑琴,刘宜华.磁场沉积态FeCuCrVSiB薄膜的软磁特性和巨磁阻抗效应[J]金属学报.2009,45(5).
[8]孙光飞,强文江,磁功能材料[M]北京:化学工业出版社,2007.
[2]Sommer R L,Chien C L.Longitudinal and transversemagneto-impedance in amorphous FeCuNbSiB films.[J]Appl.Phys.Lett.1995,67(22).
[3]Suzuki K et al.High Saturation Magnetization and SoftMagnetic Properties of bcc Fe-Zr-B and Fe-Zr-B-M(M=Transition Metal)Alloys with NanoscaleGrain Size.[J]Mater Trans JIM.1991,32(1).
[4]周勇,丁文,陈吉安,高孝裕,王明军,张亚民.薄膜厚度对多层膜巨磁阻抗效应的影响研究[J]功能材料与器件学报.2004,10(2).
[5]葛副鼎,库万军,朱静.软磁薄带巨磁阻抗效应的数值分析[J]功能材料与器件学报.1997,3(4).
[6]王宗篪.纵向驱动巨磁阻抗效应的解释[J]集美大学学报.2002,7(1).
[7]陈卫平,冯尚申,邵先亦,萧淑琴,刘宜华.磁场沉积态FeCuCrVSiB薄膜的软磁特性和巨磁阻抗效应[J]金属学报.2009,45(5).
[8]孙光飞,强文江,磁功能材料[M]北京:化学工业出版社,2007.