摘要
嵌段共聚物纳米刻蚀技术因具有易大批量生产的优点,在集成电路硅片、生物芯片等技术领域引起了广泛的关注。本研究进一步改进了该技术,通过旋涂得到嵌段共聚物自组装模板,然后通过湿式腐蚀在硅表面上形成相应的点阵状SiH_x纳米坑,进而生成聚合物刷的纳米点阵结构。用原子力显微镜对每一步的形貌进行了拍摄,用多次透射-反射红外光谱对每一步的表面分子结构进行了表征。此外,根据所观察到的树突状结构,提出了聚合物刷树突状生长和扩散受限聚集的生长机理。
Block copolymer nano-etching technology has attracted wide attention in the field of integrated circuit silicon chip and biochip because of its advantages of mass production. We further improved the technique. The self-assembly template of block copolymer was obtained by spin coa-ting, then the corresponding SiH_x nano-pits were fabricated on the silicon surface by wet etching, and further the nano-array structure of polymer brushes was generated. The morphology was imaged by atomic force microscope(AFM), and the surface molecular structure was characterized by multiple transmitter-reflection infrared spectroscopy(MTR-IR) in each step for the whole sequential stepwise reactions. In addition, according to the observed dendritic structure in the AFM images, the growth mechanism of dendritic appearence and diffusion restricted aggregation of polymer brushes was proposed.
引文
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