偏轴磁控溅射法外延BiFeO_3薄膜的介电性能与阻变效应
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摘要
利用偏轴射频磁控溅射法,在(001)SrTiO_3(STO)单晶基片上制备了Pt/BiFeO_3/La_(0.5)Sr_(0.5)CoO_3/STO(Pt/BFO/LSCO/STO)异质结电容器。研究了BiFeO_3薄膜的结构和物理性能。原子力显微镜(AFM)和X射线衍射(XRD)分析表明:BFO薄膜结晶质量良好,且为单相(00l)外延钙钛矿结构。介电性能测试结果发现:在5 V驱动电压下,Pt/BFO/LSCO电容器呈现饱和的蝶形回线,调谐率和介电损耗分别为14.1%和0.19。此外,阻变机制研究表明:在0→5→0 V正向电压和0→–5→0 V负向电压下,阻变均为高阻向低阻转变规律,呈现为铁电二极管的阻变开关行为。通过I–V曲线拟合,得到0→5→0→–5 V时阻变机制为空间电荷限制电流陷阱能级的填充和脱陷,而–5→0 V时符合界面限制的F-N隧穿机制。
The Pt/BiFeO_3/La_(0.5) Sr_(0.5) CoO_3/SrTiO_3(Pt/BFO/LSCO/STO) heterostructures were fabricated on(001) SrTiO_3 substrate by off-axis RF magnetron sputtering, on which epitaxial BiFeO_3(BFO) thin films were suecessfully grown. The BFO thin film shows good crystal quality with(00 l) epitaxial growth as confirmed by the atomic force microscope(AFM) and X-ray diffraction(XRD). Pt/BFO/LSCO capacitor exhibits a saturated butterfly loop with tuning rate of 14.1% and dielectric loss of 0.19 at 5 V driving voltage. Moreover, the resistance changes from high value to low value with positive voltage 0→5→0 V and negative voltage 0→–5→0 V, which displays switch behavior of ferroelectric diode resistance-change. Based on the I–V fitting curves, the resistance change mechanism fits the space charge limited current trap level when 0→5→0→–5 V and the interface limit F-N tunneling mechanism as –5→0 V, respectively.
The Pt/BiFeO_3/La_(0.5) Sr_(0.5) CoO_3/SrTiO_3(Pt/BFO/LSCO/STO) heterostructures were fabricated on(001) SrTiO_3 substrate by off-axis RF magnetron sputtering, on which epitaxial BiFeO_3(BFO) thin films were suecessfully grown. The BFO thin film shows good crystal quality with(00 l) epitaxial growth as confirmed by the atomic force microscope(AFM) and X-ray diffraction(XRD). Pt/BFO/LSCO capacitor exhibits a saturated butterfly loop with tuning rate of 14.1% and dielectric loss of 0.19 at 5 V driving voltage. Moreover, the resistance changes from high value to low value with positive voltage 0→5→0 V and negative voltage 0→–5→0 V, which displays switch behavior of ferroelectric diode resistance-change. Based on the I–V fitting curves, the resistance change mechanism fits the space charge limited current trap level when 0→5→0→–5 V and the interface limit F-N tunneling mechanism as –5→0 V, respectively.
引文
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[26]EBRAHIMPOUR Z,MANSOUR N.Annealing effects on electrical behavior of gold nanoparticle film:conversion of ohmic to non-ohmic conductivity.Appl.Surf.Sci.,2017,394:240–247.
[2]TIAN B B,LIU Y,CHEN L F,et al.Space-charge effect on electroresistance in metal-ferroelectric-metal capacitors.Sci.Rep.,2015,5:18297–1–9.
[3]ABUWASIB M,LU H,LI T,et al.Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions.Appl.Phys.Lett.,2016,108(15):152904–1–5.
[4]SILVA J P B,KAMAKSHI K,SEKHAR K C,et al.Light-controlled resistive switching in laser-assisted annealed Ba0.8Sr0.2Ti O3 thin films.Physica.Status.Solidi.A,2016,213(4):1082–1087.
[5]BARRIONUEVO D,ZHANG L,ORTEGA N,et al.Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field.Integr.Ferroelectr.,2016,174(1):174–185.
[6]WANG C,JIN K J,XU Z T,et al.Switchable diode effect and ferroelectric resistive switching in epitaxial Bi Fe O3 thin films.Appl.Phys.Lett.,2011,98(19):192901–1–3.
[7]XU H M,WANG H C,SHEN Y,et al.Photocatalytic and magnetic behaviors of Bi Fe O3 thin films deposited on different substrates.J.Appl.Phys.,2014,116(17):174307–1–5.
[8]MOUBAH R,ROUSSEAU O,COLSON D,et al.Photoelectric effects in single domain Bi Fe O3 crystals.Adv.Funct.Mater.,2012,22(22):4814–4818.
[9]LI M,ZHUGE F,ZHU X,et al.Nonvolatile resistive switching in metal/La-doped Bi Fe O3/Pt sandwiches.Nanotech.,2010,21(42):425202–1–5.
[10]ZHU H,ZHANG Y,JIANG A,et al.Effect of poling process on resistive switching in Au/Bi Fe O3/Sr Ru O3 structures.Appl.Phys.Lett.,2016,109(25):252901–1–4.
[11]HONG S,CHOI T,JEON J H,et al.Large resistive switching in ferroelectric Bi Fe O3 nano-island based switchable diodes.Adv.Mater.,2013,25(16):2339–2343.
[12]YAMADA H,GARCIA V,FUSIL S,et al.Giant electroresistance of super-tetragonal Bi Fe O3-based ferroelectric tunnel junctions.ACS Nano.,2013,7(6):5385–5390.
[13]LIN Y B,YAN Z B,LU X B,et al.Temperature-dependent and polarization-tuned resistive switching in Au/Bi Fe O3/Sr Ru O3 junctions.Appl.Phys.Lett.,2014,104(14):143503–1–5.
[14]WANG Y,JIANG Q H,HE H C,et al.Multiferroic Bi Fe O3 thin films prepared via a simple Sol-Gel method.Appl.Phys.Lett.,2006,88(14):142503–1–3.
[15]TRASSIN M,CLARKSON J D,BOWDEN S R,et al.Interfacial coupling in multiferroic-ferromagnet heterostructures.Phys.Rev.B,2013,87(13):134426–1–6.
[16]QI X,TSAI PC,CHEN YC,et al.Ferroelectric properties and dielectric responses of multiferroic Bi Fe O3 films grown by RF magnetron sputtering.J.Phys.D:Appl.Phys.,2008,41(23):232001–1–5.
[17]WU J,WANG J.Bi Fe O3 thin films of(111)-orientation deposited on Sr Ru O3 buffered Pt/Ti O/Si O/Si(100)substrates.Acta Mater.,2010,58(5):1688–1697.
[18]HAO Y L,LIU B T,PENG Z W,et al.Effect of retained temperature on the structure and property of Bi Fe O3 thin film prepared by off-axis magnetron sputtering method.J.Synth.Cryst.,2013,42(2):246–250.
[19]FAN X M,LIAN J S,GUO Z X,et al.Microstructure and photoluminescence properties of Zn O thin films grown by PLD on Si(111)substrates.Appl.Surf.Sci.,2005,239(2):176–181.
[20]WANG C,CHEN Z,HU H,et al.Effect of the oxygen pressure on the microstructure and optical properties of Zn O films prepared by laser molecular beam epitaxy.Phys.B,2009,404(21):4075–4082.
[21]NAGARAJ B,AGGARWAL S,RAMESH R.Influence of contact electrodes on leakage characteristics in ferroelectric thin films.J.Appl.Phys.,2001,90(1):375–382.
[22]SHANG D S,WANG Q,CHEN L D,et al.Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3Mn O3/Pt heterostructures.Phys.Rev.B,2006,73(24):245427–1–7.
[23]WANG S Y,CHENG B L,WANG C,et al.Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5Ti O3/Nb-Sr Ti O3 capacitor.Appl.Phys.Lett.,2004,84(20):4116–4118.
[24]CHEN X,WU G,JIANG P,et al.Colossal resistance switching effect in Pt/spinel-Mg Zn O/Pt devices for nonvolatile memory applications.Appl.Phys.Lett.,2009,94(3):033501–1–3.
[25]ZHU H,ZHANG Y Q,WANG P F,et al.Resistive switching effect and conduction mechanism of Bi Fe O3 thin films.J.Chin.Ceram.Soc.,2017,45(4):467–471.
[26]EBRAHIMPOUR Z,MANSOUR N.Annealing effects on electrical behavior of gold nanoparticle film:conversion of ohmic to non-ohmic conductivity.Appl.Surf.Sci.,2017,394:240–247.
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