新型无铅Na_(0.5)Y_(0.5)TiO_3铁电薄膜的制备及性能
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摘要
采用射频磁控溅射法在[001]取向的掺铌钛酸锶(Nb:STO)单晶衬底上制备Na_(0.5)Y_(0.5)TiO_3(NYT)铁电薄膜,研究了该铁电薄膜的物相组成、显微结构、铁电性能、电输运性能。结果表明:NYT薄膜具有[001]取向的外延结构,其表面平整,界面清晰,结晶质量良好;NYT薄膜具有铁电性能,其剩余极化强度为0.3μC·cm~(-2),矫顽场为178kV·cm~(-1);NYT薄膜/电极界面存在肖特基势垒,反偏状态的肖特基结能够显著降低NYT薄膜的漏电流密度,提高其耐压强度,肖特基结处于正偏状态时的电流传导符合陷阱态控制的空间电荷限制电流机制。
Na_(0.5)Y_(0.5)TiO_3(NYT) ferroelectric thin film was prepared on the substrate of single-crystal niobium doped strontium titanate(Nb:STO)with[001]orientation by radio frequency magnetron sputtering.The phase composition,microstructure,ferroelectric properties and electrical transport properties of the ferroelectric thin film were studied.The results show that the NYT thin film had a[001] oriented epitaxial structure,the surface was smooth,the interface was clear,and the crystalline quality was good.The NYT thin film had ferroelectric properties with remanent polarization of 0.3μC·cm~(-2) and coercive field of 178 kV·cm~(-1).The Schottky barrier was found at the NYT thin film/electrode interface.The reverse-biased Schottky junction decreased the leakage current density significantly and increased the breakdown electric field strength of NYT thin film.The current conduction in the forward-biased state of Schottky junction complied with the space charge limited current mechanism controlled by trapping state.
Na_(0.5)Y_(0.5)TiO_3(NYT) ferroelectric thin film was prepared on the substrate of single-crystal niobium doped strontium titanate(Nb:STO)with[001]orientation by radio frequency magnetron sputtering.The phase composition,microstructure,ferroelectric properties and electrical transport properties of the ferroelectric thin film were studied.The results show that the NYT thin film had a[001] oriented epitaxial structure,the surface was smooth,the interface was clear,and the crystalline quality was good.The NYT thin film had ferroelectric properties with remanent polarization of 0.3μC·cm~(-2) and coercive field of 178 kV·cm~(-1).The Schottky barrier was found at the NYT thin film/electrode interface.The reverse-biased Schottky junction decreased the leakage current density significantly and increased the breakdown electric field strength of NYT thin film.The current conduction in the forward-biased state of Schottky junction complied with the space charge limited current mechanism controlled by trapping state.
引文
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[2]JEONG D S,THOMAS R,KATIYAR R S,et al.Emerging memories:Resistive switching mechanisms and current status[J].Reports on Progress in Physics,2012,75(7):076502.
[3]LIU Y,WANG S F,CHEN Z J,et al.Applications of ferroelectrics in photovoltaic devices[J].Science China Materials,2016,59(10):851-866.
[4]MA J,HU J,LI Z,et al.Recent progress in multiferroic magnetoelectric composites:From bulk to thin films[J].Advanced Materials,2011,23(9):1062-1087.
[5]陈敏,肖定全,孙勇,等.钛酸铋钠基无铅压电陶瓷研究近期进展[J].功能材料,2007,38(8):1229-1233.
[6]INAGUMA Y,TSUCHIYA T,KATSUMATA T.Systematic study of photoluminescence upon band gap excitation in perovskite-type titanates R1/2Na1/2TiO3:Pr(R=La,Gd,Lu,and Y)[J].Journal of Solid State Chemistry,2007,180(5):1678-1685.
[7]BOUTINAUD P,SARAKHA L,MAHIOU R,et al.Intervalence charge transfer in perovskite titanates R1/2Na1/2TiO3:Pr3+(R=La,Gd,Y,Lu)[J].Journal of Luminescence,2010,130(10):1725-1729.
[8]BARIK S K,CHOUDHARY R N P,MAHAPATRA P K.Structural and dielectric studies of lead-free ceramics:Na1/2Y1/2TiO3[J].Central European Journal of Physics,2008,6(4):849-852.
[9]PINTILIE L,BOERASU I,GOMES M J M,et al.Metalferroelectric-metal structures with Schottky contacts.II.Analysis of the experimental current-voltage and capacitancevoltage characteristics of Pb(Zr,Ti)O3thin films[J].Journal of Applied Physics,2005,98(12):2107-2107.
[10]付跃举,刘保亭,郭颖楠,等.沉积温度对磁控溅射法制备La0.5Sr0.5CoO3薄膜微结构和导电性能的影响[J].机械工程材料,2009,33(4):18-21.
[11]黄佳佳,张勇,陈继春.高储能密度介电材料的研究进展[J].材料导报,2009,23(增刊2):307-312.
[12]YU K,NIU Y,XIANG F,et al.Enhanced electric breakdown strength and high energy density of barium titanate filled polymer nanocomposites[J].Journal of Applied Physics,2013,114(17):339-339.
[13]SHANG D S,WANG Q,CHEN L D,et al.Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures[J].Physical Review B,2006,73(24):245427.
[14]WANG S Y,CHENG B L,WANG C,et al.Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5 TiO3/NbSrTiO3 capacitor[J].Applied Physics Letters,2004,84(20):4116-4118.
[15]WANG W,ZHU Q X,LI X M,et al.Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates[J].Journal of Materials Science:Materials in Electronics,2013,24(10):3782-3787.
[16]WANG H,BAI Y,NING X,et al.Enhanced electrical properties in ferroelectric thin films on conductive AuLaNiO3nanocomposite electrodes via modulation of Schottky potential barrier[J].RSC Advances,2015,5(126):104203-104209.
[17]易姝慧,王亚林,彭庆军,等.温度对交联聚乙烯中的空间电荷积累以及迁移的影响[J].中国电机工程学报,2017,37(19):5796-5803.
[18]LZ,WANG X,WU K,et al.Dependence of charge accumulation on sample thickness in nano-SiO2doped LDPE[J].IEEE Transactions on Dielectrics&Electrical Insulation,2013,20(1):337-345.
[19]KIM C,JEON D.Electric force microscopy imaging of charge accumulation and barrier lowering at Al/pentacene junction[J].Applied Physics Letters,2009,95(15):153302.
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