极低温散粒噪声测试系统及隧道结噪声测量
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摘要
介观体系输运过程中载流子的离散性导致了散粒噪声.通过测量散粒噪声可以得到传统的基于时间平均值的电导测量无法得到的随时间涨落信息,因而作为一种重要手段在极低温量子输运研究中得到了一定的应用.极低温环境下的噪声测量是一种难度很大的极端条件下的微弱信号测量,通常需要在低温端安装前置放大器并且尽量靠近待测器件以提高测量信噪比和带宽,因此对放大器的噪声水平和功耗都有严格的要求.提出了在稀释制冷机内搭建的散粒噪声测量系统,以及利用此套系统得到了在mK温区超导隧道结散粒噪声的测量结果.自行研制的高电子迁移率晶体管低温前置放大器采用整体封装,便于安装在商用干式稀释制冷机的4 K温区,本底电压噪声为0.25 nV/√Hz,功耗仅为0.754 mW.通过对隧道结进行散粒噪声测量,得到的Fano因子和理论计算吻合.
Traditionally, electrical noise is considered as an interference source for low level measurements. Shot noise is the current fluctuation caused by the discreteness of electrons. In a mesoscopic system, shot noise is sensitive to the interaction of charge carriers. Since the 20~(th) century, it has been found that the shot noise measurement can provide the information about quantum fluctuations, which cannot be measured with traditional transport measurement method. It is usually difficult to measure weak noise signal at ultra-low temperature due to technical difficulties. It is necessary to mount a cryogenic preamplifier close to the sample to improve signal-tonoise ratio and to increase the bandwidth. Therefore, the ultra-low background noise and the power consumption of the amplifier should be used. In this report we present a shot noise measurement system at dilution refrigerator temperatures. We also introduce and analyze the noise model of our shot noise measurement system. With customized high electron mobility transistors, we make a series of ultra-low noise cryogenic preamplifiers. All the electronic components of the amplifier are packed into a shielding box, which makes the installation of the cryogenic amplifier more convenient. The amplifier is mounted on the 4 K stage of a dry dilution refrigerator and the total power consumption is less than 0.754 mW. The gains and the background noises of the amplifiers are calibrated with the Johnson-Nyquist noise of the combination of a superconducting resistor and a normal resistor at various temperatures. The measured input referred noise voltage can be as low as 0.25 nV/√Hz. In this report, the performance of the system is demonstrated by the shot noise measurement of an Al/AlO_x/Al tunnel junction at various temperatures. Above the superconducting transition temperature of aluminum, the measured Fano factor of the system is very close to 1, which is in a good agreement with the theory prediction.
Traditionally, electrical noise is considered as an interference source for low level measurements. Shot noise is the current fluctuation caused by the discreteness of electrons. In a mesoscopic system, shot noise is sensitive to the interaction of charge carriers. Since the 20~(th) century, it has been found that the shot noise measurement can provide the information about quantum fluctuations, which cannot be measured with traditional transport measurement method. It is usually difficult to measure weak noise signal at ultra-low temperature due to technical difficulties. It is necessary to mount a cryogenic preamplifier close to the sample to improve signal-tonoise ratio and to increase the bandwidth. Therefore, the ultra-low background noise and the power consumption of the amplifier should be used. In this report we present a shot noise measurement system at dilution refrigerator temperatures. We also introduce and analyze the noise model of our shot noise measurement system. With customized high electron mobility transistors, we make a series of ultra-low noise cryogenic preamplifiers. All the electronic components of the amplifier are packed into a shielding box, which makes the installation of the cryogenic amplifier more convenient. The amplifier is mounted on the 4 K stage of a dry dilution refrigerator and the total power consumption is less than 0.754 mW. The gains and the background noises of the amplifiers are calibrated with the Johnson-Nyquist noise of the combination of a superconducting resistor and a normal resistor at various temperatures. The measured input referred noise voltage can be as low as 0.25 nV/√Hz. In this report, the performance of the system is demonstrated by the shot noise measurement of an Al/AlO_x/Al tunnel junction at various temperatures. Above the superconducting transition temperature of aluminum, the measured Fano factor of the system is very close to 1, which is in a good agreement with the theory prediction.
引文
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[36]Dicarlo L,Williams J R,Zhang Y,McClure D T,Marcus CM 2008 Phys.Rev.Lett.100 156801
[2]Schottky W 1918 Ann.Phys.57 541
[3]Beenakker C,Sch?nenberger C 2003 Phys.Today 56 37
[4]Blanter Y M,Büttiker M 2000 Phys.Rep.336 1
[5]Lesovik G B 1989 JETP Lett.49 513
[6]Buttiker M 1990 Phys.Rev.Lett.65 2901
[7]Beenakker C W J,Büttiker M 1992 Phys.Rev.B 46 1889
[8]Reznikov M,Heiblum M,Shtrikman H,Mahalu D 1995 Phys.Rev.Lett.75 3340
[9]Kumar A,Saminadayar L,Glattli D C 1996 Phys.Rev.Lett.76 2778
[10]Picciotto R D,Reznikov M,Heiblum M,Umansky V,Bunin G,Mahalu D 1997 Nature 389 162
[11]Saminadayar L,Glattli D C,Jin Y,Etienne B 1997 Phys.Rev.Lett.79 2526
[12]Reznikov M,de Picciotto R,Griffiths T G,Heiblum M,Umansky V 1999 Nature 399 238
[13]Hasan M Z,Kane C L 2010 Rev.Mod.Phys.82 3045
[14]Nayak C,Simon S H,Stern A,Freedman M,Das Sarma S2008 Rev.Mod.Phys.80 1083
[15]Zhang H,Liu C X,Gazibegovic S,Xu D,Logan J A,Wang G,van Loo N,Bommer J D S,de Moor M W A,Car D,Op Het Veld R L M,van Veldhoven P J,Koelling S,Verheijen MA,Pendharkar M,Pennachio D J,Shojaei B,Lee J S,Palmstrom C J,Bakkers E,Sarma S D,Kouwenhoven L P2018 Nature 556 74
[16]Armitage N P,Mele E J,Vishwanath A 2018 Rev.Mod.Phys.90 015001
[17]Sbierski B,Pohl G,Bergholtz E J,Brouwer P W 2014 Phys.Rev.Lett.113 026602
[18]Trescher M,Sbierski B,Brouwer P W,Bergholtz E J 2015Phys.Rev.B 91 115135
[19]Matveeva P G,Aristov D N,Meidan D,Gutman D B 2017Phys.Rev.B 96 165406
[20]Yang Y L,Bai C X,Xu X G,Jiang Y 2018 Nanotechnology29 074002
[21]Golub A,Horovitz B 2011 Phys.Rev.B 83 153415
[22]Bolech C J,Demler E 2007 Phys.Rev.Lett.98 237002
[23]Soller H,Komnik A 2014 Physica E 63 99
[24]Bolech C J,Demler E 2008 Physica B 403 994
[25]Akhmerov A R,Dahlhaus J P,Hassler F,Wimmer M,Beenakker C W 2011 Phys.Rev.Lett.106 057001
[26]LüH F,Guo Z,Ke S S,Guo Y,Zhang H W 2015 J.Appl.Phys.117 164312
[27]DiCarlo L,Zhang Y,McClure D T,Marcus C M,Pfeiffer LN,West K W 2006 Rev.Sci.Instrum.77 073906
[28]Hashisaka M,Nakamura S,Yamauchi Y,Kasai S,Kobayash K,Ono T 2008 Phys.Status Solidi C 5 182
[29]Arakawa T,Nishihara Y,Maeda M,Norimoto S,Kobayash K 2013 Appl.Phys.Lett.103 172104
[30]Robinson A M,Talyanskii V I 2004 Rev.Sci.Instrum.753169
[31]Ronen Y,Cohen Y,Kang J H,Haim A,Rieder M T,Heiblum M,Mahalu D,Shtrikman H 2016 Proc.Natl Acad.Sci.USA113 1743
[32]Chen W H,Du L,Zhuang Y Q,Bao J L,He L,Chen H,Sun P,Wang T L 2011 Acta Phys.Sin.60 050704(in Chinese)[陈文豪,杜磊,庄奕琪,包军林,何亮,陈华,孙鹏,王婷岚2011物理学报60 050704]
[33]Yang W H,Wei J 2018 Chin.Phys.B 27 060702
[34]Dong Q,Liang Y X,Ferry D,Cavanna A,Gennser U,Couraud L,Jin Y 2014 Appl.Phys.Lett.105 013504
[35]Hashisaka M,Yamauchi Y,Nakamura S,Kasai S,Kobayashi K,Ono T 2008 J.Phys.:Conf.Ser.109 012013
[36]Dicarlo L,Williams J R,Zhang Y,McClure D T,Marcus CM 2008 Phys.Rev.Lett.100 156801
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