GaSb半导体材料表面的化学蚀刻研究进展
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摘要
提高GaSb材料表面的湿法化学蚀刻速率以及调控蚀刻后GaSb材料的表面形貌,对增强锑化物激光器器件的性能具有重要意义。总结了各种蚀刻体系蚀刻GaSb材料的速率和蚀刻后的表面形貌,及近年来关于GaSb半导体材料化学蚀刻的最新研究进展,关注的体系包括无机酸蚀刻体系、有机酸蚀刻体系、混酸蚀刻体系及其他蚀刻体系,对各蚀刻体系的蚀刻速率及蚀刻后的表面形貌进行对比,指出了各蚀刻体系优点与不足及后续的研究方向,归纳总结各了蚀刻体系中主要组成的作用。综述发现,可用于GaSb化学蚀刻液中的氧化剂主要有H_2O_2、HNO_3、I_2、Br_2、KMnO_4,络合剂(或溶解剂)主要有酒石酸、HF、HCl、柠檬酸等,缓冲剂(或稀释剂)主要有HAc和H_2O等。盐酸、双氧水和无机酸组成蚀刻液的蚀刻速率适中,蚀刻表面较为光滑;硝酸、氢氟酸组成的蚀刻液具有蚀刻速率快的优点,可通过添加有机酸或缓冲剂改善蚀刻效果,具有很大的发展前景;磷酸体系则具有蚀刻后台面平整、下切效应小等优点,但蚀刻速率较慢,蚀刻后表面较粗糙;硫酸体系蚀刻后表面较粗糙,不适于GaSb的湿法蚀刻;单一的有机酸和碱性体系的蚀刻速率较慢,但由于具有很强的蚀刻选择性,被广泛应用于GaSb基材料的选择性蚀刻。总体来说,无机酸和有机酸组成的蚀刻体系更有利于提高Ga Sb材料的蚀刻速率及控制表面形貌,各蚀刻体系均存在蚀刻速率可调性不强、蚀刻形貌质量不可控、蚀刻可重复性较差等问题。基于此,总结了改进湿法化学蚀刻GaSb材料的多种研究思路,并对GaSb材料湿法蚀刻的未来发展方向进行展望。
Improving the wet chemical etching rate on GaSb surface and adjusting the etched surface morphology are of great significance to enhance the performance of antimonide laser devices. Therefore, the work summarized the etching rate and surface morphology of all kinds of corrosive liquid etching GaSb materials and the latest researches on chemical etching of Ga Sb semiconductor materials. The inorganic acid etching system, organic acid etching system and mixed acid etching system were mainly investigated, the etching rate and the etched surface morphology of each etching system were compared, the ad-vantages and disadvantages of each etching system and further research direction were pointed out, and the roles of main components in each etching system were summarized. H_2O_2, HNO_3, I_2, Br_2 and KMnO_4 were main oxidants used in GaSb chemical etching liquid. Complexing agent(or dissolving agent) mainly consisted of tartaric acid, HF, HCl, citric acid, etc. Buffer(or thinner) included HAc, H_2O, etc. The etching rate of hydrochloric acid, hydrogen peroxide and inorganic acid was moderate, and the etching surface was relatively smooth. The etching solution composed of nitric acid and hydrofluoric acid had the advantage of rapid corrosion rate, so the etching effect could be improved by adding organic acid or buffer, and the development prospect was great. The phosphoric acid system had the advantages of flat surface after etching and little effect of downward cutting, but it also had the disadvantages of slow etching and rough surface after etching. The surface of sulfuric acid system was rough after etching and not suitable for GaSb wet etching. Single organic acids and alkaline systems had a slow etching rate, but due to strong etching selectivity, they were widely used in the selective etching of GaSb based materials. On the whole, etching system composed of inorganic acids and organic acid was better to improve the etching rate and surface morphology of GaSb material and all the etching systems had problems such as weak adjustable etching rate,uncontrollable surface quality and poor etching repeatability. Therefore, the work summarizes a variety of research ideas to improve the wet chemical etching GaSb materials, and looks forward to the future development direction of GaSb materials wet etching.
Improving the wet chemical etching rate on GaSb surface and adjusting the etched surface morphology are of great significance to enhance the performance of antimonide laser devices. Therefore, the work summarized the etching rate and surface morphology of all kinds of corrosive liquid etching GaSb materials and the latest researches on chemical etching of Ga Sb semiconductor materials. The inorganic acid etching system, organic acid etching system and mixed acid etching system were mainly investigated, the etching rate and the etched surface morphology of each etching system were compared, the ad-vantages and disadvantages of each etching system and further research direction were pointed out, and the roles of main components in each etching system were summarized. H_2O_2, HNO_3, I_2, Br_2 and KMnO_4 were main oxidants used in GaSb chemical etching liquid. Complexing agent(or dissolving agent) mainly consisted of tartaric acid, HF, HCl, citric acid, etc. Buffer(or thinner) included HAc, H_2O, etc. The etching rate of hydrochloric acid, hydrogen peroxide and inorganic acid was moderate, and the etching surface was relatively smooth. The etching solution composed of nitric acid and hydrofluoric acid had the advantage of rapid corrosion rate, so the etching effect could be improved by adding organic acid or buffer, and the development prospect was great. The phosphoric acid system had the advantages of flat surface after etching and little effect of downward cutting, but it also had the disadvantages of slow etching and rough surface after etching. The surface of sulfuric acid system was rough after etching and not suitable for GaSb wet etching. Single organic acids and alkaline systems had a slow etching rate, but due to strong etching selectivity, they were widely used in the selective etching of GaSb based materials. On the whole, etching system composed of inorganic acids and organic acid was better to improve the etching rate and surface morphology of GaSb material and all the etching systems had problems such as weak adjustable etching rate,uncontrollable surface quality and poor etching repeatability. Therefore, the work summarizes a variety of research ideas to improve the wet chemical etching GaSb materials, and looks forward to the future development direction of GaSb materials wet etching.
引文
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