钛酸铋系铁电薄膜材料改性研究
|
摘要
随着铁电存储器材料研究的深入,含铋层钙钛矿结构铁电薄膜(BLSF)近年来引起了人们的极大兴趣。其中,Bi_4Ti_3O_(12)(BTO)及其改性铁电薄膜是应用于铁电存储器的最热点材料之一。
本文首先概述了铁电体的基本特性以及铁电薄膜在电存储器中的应用。BTO被认为是最具有应用前景的铁电材料之一。然而,剩余极化较小以及较差的抗疲劳特性限制了其在工业中的广泛应用。针对BTO薄膜存在的主要问题,本文研究A位和B位掺杂以及A/B位共掺杂对BTO薄膜微结构和铁电性能的影响;在此基础上,考虑到在薄膜高温制备中Bi_2O_3易挥发问题,通过增加Bi_2O_3过量的方法来研究Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT)薄膜结构和铁电性能的变化规律;另外我们还研究缓冲层对BLT薄膜晶粒取向和微结构的影响。研究结果获得了克服以上问题的优化工艺,包括最佳Bi_2O_3过量值以及最佳的掺杂方式和掺杂量,并且发现缓冲层能够改善BLT薄膜的晶粒取向和漏电流特性。主要研究结果和结论如下:
将不同Bi_2O_3过量条件下制备的BLT薄膜在600℃-800℃下进行后期退火。研究结果显示:BLT薄膜的极化行为同时受到退火温度和Bi_2O_3过量值的影响。由于适当的Bi_2O_3过量能够补偿热处理过程的铋损失,从而可以提高BLT薄膜的极化和介电特性;但是,加入过多的Bi_2O_3会形成杂相,反而会削弱BLT薄膜的极化和介电特性。在所有BLT薄膜样品中,7.5 mol%Bi_2O_3过量所制得的BLT薄膜表现出最大的剩余极化值(2Pr)25.26μC/cm~2和相对较小的矫顽电压(Vc)3.62 V,以及最大的介电常数值252.6和较小的介电损耗0.066。同时,7.5 mol%Bi_2O_3过量的BLT薄膜表现出最好的抗疲劳特性,1×10~9读/写转换周期后,样品只有9.2%的初始极化的退化。
在不同温度下退火制备A位Pr掺杂Bi_(2.9)Pr_(0.9)Ti_3O_(12)(BPT-0.9)薄膜。在此基础上,在750℃下讨论退火时间不同对BPT-0.9薄膜铁电特性的影响,从而确定最佳的工艺参数。研究发现,当退火时间比较短的情况下(10分钟),薄膜XRD图中衍射峰强度相对较弱,峰也相对较宽,表明薄膜的结晶程度较低;随着退火时间的延长,衍射峰强度逐渐高,峰也变尖锐,表明BPT-0.9薄膜结晶程度的提高。然而,当退火时间超过25分钟,XRD图中出现了杂相烧绿石相,这表明高温下过长时间的退火不利于薄膜单相结晶。
溅射时基片温度的不同对薄膜的结晶取向也会产生影响。在不同基片温度(500℃-750℃)下沉积Bi_(3.63)Pr_(0.3)Ti_3O_(12)(BPT-0.3)薄膜。研究发现当基片温度低于650℃情况下,薄膜表现出(117)方向取向;随着基片温度的升高,(00l)系列的衍射峰逐渐变强,并且当基片温度升高到750℃,BPT-0.3薄膜表现出c轴优先取向。
制备B位Zr掺杂的Bi_(3.25)La_(0.75)Ti_(3-x)Zr_xO_(12)(BLTZ-x,x=0、0.2、0.5、0.8、1.2和1.6)薄膜。随着Zr掺量的增加,BLTZ薄膜的剩余极化值逐渐增加,当x=0.2时达到最大;然而随后随着Zr~(4+)掺量的继续增加,剩余极化值开始减小;不同Zr掺量的BLTZ薄膜矫顽电压V_c没有明显的变化。疲劳特性测试表明,与没有掺杂的BLT薄膜相比,适当Zr~(4+)替代Ti~(4+)的BLTZ-0.2薄膜表现出更好的抗疲劳特性。
利用固相反应法制备了B位Mn掺杂Bi_(3.25)La_(0.75)Ti_(3-x)Mn_xO_(12)(BLTM-x,x=0.02、0.04、0.06和0.08)陶瓷。研究结果发现,随着Mn掺杂量的增大,BLTM的居里温度(T_c)逐渐降低;另一方面,BLTM的剩余极化却逐渐增大,这可能是由于晶粒取向变化和尺度的增大引起的。
研究发现,用Pt等金属作为衬底存在一些缺陷:一是容易在BLT薄膜和Pt界面上由于晶格失配产生大的应力;二是高温处理中在薄膜和Pt界面间容易产生互扩散。我们通过在BLT薄膜和Pt界面间加入一层缓冲层(Bi_2O_3或TiO_2),可以改变BLT薄膜的结晶取向,并且可以改善界面互扩散现象,从而提高BLT薄膜的铁电特性。
Bismuth layered structure ferroelectrics(BLSFs) thin films have been widely investigated recently.Among them,as a typical kind of layer-structured ferroelectrics, Bi_4Ti_3O_(12)(BTO) ferroelectric thin film has attracted much attention due to their potential applications in nonvolatile ferroelectric random access memory(NvFRAM) devices.
In this thesis,we summarized the basic properties of ferroelectrics and application of ferroelectric film in memory.BTO has been considered one of the promising ferroelectirc materials.However,the low 2Pr and poor fatigue property of BTO thin film limit its industrial application.Aiming at those problems,the dopping effects of A-site and B-site substitution and A/B-sites cosubstitution of BTO thin films were discussed.Considering the easy volatilization of Bi_2O_3 in process of heat treatment,we studied the effect of Bi_2O_3 excess content on the microstructure,ferroelectric and dielectric properties of the Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT) films.In addition,the influences of buffer layers on structure and electrical properties of BLT thin film were investigated.The research result basicly attained what we expected.The main results are as follows:
The deposited BLT were annealed at 600℃—800℃for 20 minutes respectively. Study result reveals that the polarization behavior is affected by both the annealing temperature and the amount of Bi_2O_3 excess content.Excess Bi_2O_3 added to the BLT system can enhance the polarization and dielectric properties due to compensation of Bi loss occurred during calcinations and weaken the polarization and dielectric properties due to formation of a secondary phase such as bismuth oxide.For example,The BLT film sample derived from 7.5 mol%exhibits a remnant polarization(2Pr) 25.26μC/cm~2,and coercive voltage(Vc) of 3.62 V,together with a dielectric constant of 252.6 and a dielectric loss of 0.066.Also,the BLT thin film sample derived from 7.5 mol%Bi_2O_3 excess shows the best fatigue resistance characteristics and about 9.2%polarization degradation after 1×10~9 read/write switching cycles.
A-site Praseodymium doped BTO thin films with composition Bi_(2.9)Pr_(0.9)Ti_3O_(12) (BPT-0.9) were prepared after post annealed at different temperature.Based on it,for BPT-0.9 film annealed at 750℃,the effect of different annealing time on ferroelectric properties was discussed.It was found that when annealed for a short time(10 min), relatively broaden peaks were observed for the BPT-0.9 thin film,implying low crystallinity.With the increase of the annealing time length,the diffraction peaks become stronger,indicating the growth in crystallinity in the BLT films.However,when the annealing time is above 25 min,a pyrochlore phase peak appears in X-ray diffraction patterns.It indicates that too long annealing time is unfavorable to crystallinity of BPT-0.9 films.
Bi_(3.63)Pr_(0.3)Ti_3O_(12)(BPT-0.3) films were deposited by RF-magnetron sputtering with substrate temperature varied from 500 to 750℃and the effect of substrate temperature on growth orientation was investigation.Films deposited below 650℃showed no preferred c-axis orientation and(117)peak is the strongest peak.As the substrate temperature was increased,however,the intensity of the film(00l)-plane peaks increased leading to c-axis preferred orientation in the film at 750℃.
B-site Zr-doping Bi_(3.25)La_(0.75)Ti_(3-x)Zr)xO_(12)(BLTZ-x,x=0,0.2,0.5,0.8,1.2 and 1.6) were prepared successful.With the increasing of dopant concentration,the remanent polarization(2Pr) first increases then decrease while there is almost no obvious difference in the Vc values.In comparison with no Zr-doped BLT,the fatigue test indicates that appropriated Zr-doped BLTZ-0.2 exhibite better fatigue resistance characteristics.
B-site Mn-doped Bi_(3.25)La_(0.75)Ti_(3-x)Mn_xO_(12)(BLTM-x,x=0.02,0.04,0.06和0.08) were prepared by a solid-state reaction technique.It was found that The Curie temperature of Mn-doped BLT was steadily shifted to lower temperature with increasing Mn-doping content.It was the increase in crystal structure symmetry that led to a decrease in the Curie temperature of the samples.In addition,the remnant polarization of BLTM samples increased with the Mn-doping content,which might be due to modification in the orientation of grains and enhance of grains size.
Previous research found there are some disadvantages when used Pt as substrate, such as larger stress due to lattice dismatch and interdifusion between Pt and ferroelectric film when heat treatment.Through introduce buffer layer,such Bi_2O_3 or TiO_2,could change crystallization orientation and limit interdifusion.Because of those would improve the ferroelectric properties of BLT films.
本文首先概述了铁电体的基本特性以及铁电薄膜在电存储器中的应用。BTO被认为是最具有应用前景的铁电材料之一。然而,剩余极化较小以及较差的抗疲劳特性限制了其在工业中的广泛应用。针对BTO薄膜存在的主要问题,本文研究A位和B位掺杂以及A/B位共掺杂对BTO薄膜微结构和铁电性能的影响;在此基础上,考虑到在薄膜高温制备中Bi_2O_3易挥发问题,通过增加Bi_2O_3过量的方法来研究Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT)薄膜结构和铁电性能的变化规律;另外我们还研究缓冲层对BLT薄膜晶粒取向和微结构的影响。研究结果获得了克服以上问题的优化工艺,包括最佳Bi_2O_3过量值以及最佳的掺杂方式和掺杂量,并且发现缓冲层能够改善BLT薄膜的晶粒取向和漏电流特性。主要研究结果和结论如下:
将不同Bi_2O_3过量条件下制备的BLT薄膜在600℃-800℃下进行后期退火。研究结果显示:BLT薄膜的极化行为同时受到退火温度和Bi_2O_3过量值的影响。由于适当的Bi_2O_3过量能够补偿热处理过程的铋损失,从而可以提高BLT薄膜的极化和介电特性;但是,加入过多的Bi_2O_3会形成杂相,反而会削弱BLT薄膜的极化和介电特性。在所有BLT薄膜样品中,7.5 mol%Bi_2O_3过量所制得的BLT薄膜表现出最大的剩余极化值(2Pr)25.26μC/cm~2和相对较小的矫顽电压(Vc)3.62 V,以及最大的介电常数值252.6和较小的介电损耗0.066。同时,7.5 mol%Bi_2O_3过量的BLT薄膜表现出最好的抗疲劳特性,1×10~9读/写转换周期后,样品只有9.2%的初始极化的退化。
在不同温度下退火制备A位Pr掺杂Bi_(2.9)Pr_(0.9)Ti_3O_(12)(BPT-0.9)薄膜。在此基础上,在750℃下讨论退火时间不同对BPT-0.9薄膜铁电特性的影响,从而确定最佳的工艺参数。研究发现,当退火时间比较短的情况下(10分钟),薄膜XRD图中衍射峰强度相对较弱,峰也相对较宽,表明薄膜的结晶程度较低;随着退火时间的延长,衍射峰强度逐渐高,峰也变尖锐,表明BPT-0.9薄膜结晶程度的提高。然而,当退火时间超过25分钟,XRD图中出现了杂相烧绿石相,这表明高温下过长时间的退火不利于薄膜单相结晶。
溅射时基片温度的不同对薄膜的结晶取向也会产生影响。在不同基片温度(500℃-750℃)下沉积Bi_(3.63)Pr_(0.3)Ti_3O_(12)(BPT-0.3)薄膜。研究发现当基片温度低于650℃情况下,薄膜表现出(117)方向取向;随着基片温度的升高,(00l)系列的衍射峰逐渐变强,并且当基片温度升高到750℃,BPT-0.3薄膜表现出c轴优先取向。
制备B位Zr掺杂的Bi_(3.25)La_(0.75)Ti_(3-x)Zr_xO_(12)(BLTZ-x,x=0、0.2、0.5、0.8、1.2和1.6)薄膜。随着Zr掺量的增加,BLTZ薄膜的剩余极化值逐渐增加,当x=0.2时达到最大;然而随后随着Zr~(4+)掺量的继续增加,剩余极化值开始减小;不同Zr掺量的BLTZ薄膜矫顽电压V_c没有明显的变化。疲劳特性测试表明,与没有掺杂的BLT薄膜相比,适当Zr~(4+)替代Ti~(4+)的BLTZ-0.2薄膜表现出更好的抗疲劳特性。
利用固相反应法制备了B位Mn掺杂Bi_(3.25)La_(0.75)Ti_(3-x)Mn_xO_(12)(BLTM-x,x=0.02、0.04、0.06和0.08)陶瓷。研究结果发现,随着Mn掺杂量的增大,BLTM的居里温度(T_c)逐渐降低;另一方面,BLTM的剩余极化却逐渐增大,这可能是由于晶粒取向变化和尺度的增大引起的。
研究发现,用Pt等金属作为衬底存在一些缺陷:一是容易在BLT薄膜和Pt界面上由于晶格失配产生大的应力;二是高温处理中在薄膜和Pt界面间容易产生互扩散。我们通过在BLT薄膜和Pt界面间加入一层缓冲层(Bi_2O_3或TiO_2),可以改变BLT薄膜的结晶取向,并且可以改善界面互扩散现象,从而提高BLT薄膜的铁电特性。
Bismuth layered structure ferroelectrics(BLSFs) thin films have been widely investigated recently.Among them,as a typical kind of layer-structured ferroelectrics, Bi_4Ti_3O_(12)(BTO) ferroelectric thin film has attracted much attention due to their potential applications in nonvolatile ferroelectric random access memory(NvFRAM) devices.
In this thesis,we summarized the basic properties of ferroelectrics and application of ferroelectric film in memory.BTO has been considered one of the promising ferroelectirc materials.However,the low 2Pr and poor fatigue property of BTO thin film limit its industrial application.Aiming at those problems,the dopping effects of A-site and B-site substitution and A/B-sites cosubstitution of BTO thin films were discussed.Considering the easy volatilization of Bi_2O_3 in process of heat treatment,we studied the effect of Bi_2O_3 excess content on the microstructure,ferroelectric and dielectric properties of the Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT) films.In addition,the influences of buffer layers on structure and electrical properties of BLT thin film were investigated.The research result basicly attained what we expected.The main results are as follows:
The deposited BLT were annealed at 600℃—800℃for 20 minutes respectively. Study result reveals that the polarization behavior is affected by both the annealing temperature and the amount of Bi_2O_3 excess content.Excess Bi_2O_3 added to the BLT system can enhance the polarization and dielectric properties due to compensation of Bi loss occurred during calcinations and weaken the polarization and dielectric properties due to formation of a secondary phase such as bismuth oxide.For example,The BLT film sample derived from 7.5 mol%exhibits a remnant polarization(2Pr) 25.26μC/cm~2,and coercive voltage(Vc) of 3.62 V,together with a dielectric constant of 252.6 and a dielectric loss of 0.066.Also,the BLT thin film sample derived from 7.5 mol%Bi_2O_3 excess shows the best fatigue resistance characteristics and about 9.2%polarization degradation after 1×10~9 read/write switching cycles.
A-site Praseodymium doped BTO thin films with composition Bi_(2.9)Pr_(0.9)Ti_3O_(12) (BPT-0.9) were prepared after post annealed at different temperature.Based on it,for BPT-0.9 film annealed at 750℃,the effect of different annealing time on ferroelectric properties was discussed.It was found that when annealed for a short time(10 min), relatively broaden peaks were observed for the BPT-0.9 thin film,implying low crystallinity.With the increase of the annealing time length,the diffraction peaks become stronger,indicating the growth in crystallinity in the BLT films.However,when the annealing time is above 25 min,a pyrochlore phase peak appears in X-ray diffraction patterns.It indicates that too long annealing time is unfavorable to crystallinity of BPT-0.9 films.
Bi_(3.63)Pr_(0.3)Ti_3O_(12)(BPT-0.3) films were deposited by RF-magnetron sputtering with substrate temperature varied from 500 to 750℃and the effect of substrate temperature on growth orientation was investigation.Films deposited below 650℃showed no preferred c-axis orientation and(117)peak is the strongest peak.As the substrate temperature was increased,however,the intensity of the film(00l)-plane peaks increased leading to c-axis preferred orientation in the film at 750℃.
B-site Zr-doping Bi_(3.25)La_(0.75)Ti_(3-x)Zr)xO_(12)(BLTZ-x,x=0,0.2,0.5,0.8,1.2 and 1.6) were prepared successful.With the increasing of dopant concentration,the remanent polarization(2Pr) first increases then decrease while there is almost no obvious difference in the Vc values.In comparison with no Zr-doped BLT,the fatigue test indicates that appropriated Zr-doped BLTZ-0.2 exhibite better fatigue resistance characteristics.
B-site Mn-doped Bi_(3.25)La_(0.75)Ti_(3-x)Mn_xO_(12)(BLTM-x,x=0.02,0.04,0.06和0.08) were prepared by a solid-state reaction technique.It was found that The Curie temperature of Mn-doped BLT was steadily shifted to lower temperature with increasing Mn-doping content.It was the increase in crystal structure symmetry that led to a decrease in the Curie temperature of the samples.In addition,the remnant polarization of BLTM samples increased with the Mn-doping content,which might be due to modification in the orientation of grains and enhance of grains size.
Previous research found there are some disadvantages when used Pt as substrate, such as larger stress due to lattice dismatch and interdifusion between Pt and ferroelectric film when heat treatment.Through introduce buffer layer,such Bi_2O_3 or TiO_2,could change crystallization orientation and limit interdifusion.Because of those would improve the ferroelectric properties of BLT films.
引文
[1]J.Valask.Piezo-Electric Activity of Rochelle Salt under Various Conditions.Phys.Rev.,1922,19:478-491
[2]J.W.Zhai,B.Shen,X.Yao et al.Growth and ferroelectric study of Bi_(3.25)La_(0.75)Ti_3_(12) thin films on different substrates.Journal of Crystal Growth,2004,267:110-116
[3]S.Y.Chen,C.L.Sun,S.B.Chen et al.Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on ultrathin Al_2O_3 buffered Si for ferroelectric memory application.Appl.Phys.Lett.,2002,80:3168-3170
[4]A.Z.Simoes,A.Ries,F.M.Filho et al.Fatigue-free behavior of Bi_(3.25)La_(0.75)Ti_3O_(12)thin films grown on several bottom eletrodes by the polymeric precursor method.Appl.Phys.Lett.,2004,85:5962-5964
[5]J.C.Bae,S.S.Kim,E.K.Choi et al.Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method.Thin Solid Films,2005,472:90-95
[6]K.T.Kim,C.I.Kim.Characterization of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by metal organic decomposition method.Thin Solid Films,2005,478:6-12
[7]K.T.Kim,C.I.Kim.Electrical conduction behavior of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by a metalorganic decomposition method.Thin Solid Films,2004,177-178:774-778
[8]N.K.Kim,S.J.Yeom,S.Y.Kweon et al.(Bi,La)_4Ti_3O_(12)(BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices.Appl.Phys.Lett.,2004,85:4118-4120
[9]钟维烈.铁电体物理学.北京:科学出版社,1998,p248-264
[10]M.S.Tomar,R.E.Melgarejo,A.Hidalgo et al.Structural and ferroelectric studies of Bi_(3.44)La_(0.56)Ti_3O_(12) films.Appl.Phys.Lett.,2003,83:341-343
[11]K.T.Kim,C.I.Kim.The effect of orientation on structure and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.Surf.Coat.Tech.,2004,177-178: 770-773
[12]Y.M.Sun,Y.C.Chen,Jon Yiew Gan et al.Ferroelectric properties of(117)- and (001)-oriented Bi_(3.25)La_(0.75)Ti_3O_(12) polycrystalline thin films.Appl.Phys.Lett.,2002,81:3221-3223
[13]S.T.Zhang,G.L.Yuan,J.Wang et al.Temperature-dependent effect of oxygen vacancy on polarization switching of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.Solid State Commun.,2004,132:315-318
[14]S.Seo,J.G.Yoon,J.D.Kim et al.Hydrogen-induced degradation in ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12).Appl.Phys.Lett.,2002,81:1857-1859
[15]U.C.,K.B.Kim,H.M.Jang.Degradation mechanism of ferroelectric properties in Pt/Bi_(4-x)La_xTi_3O_(12)/Pt capacitors during forming gas annealing.Appl.Phys.Lett.,2001,79:2450-2452
[16]S.K.Lee,D.Hesse,U.Gosele et al.Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates.Appl.Phys.Lett.,2005,86:142903-142905
[17]J.K.Lee,C.H.Kim,H.S.Suh et al.Correlation between internal stress and ferroelectric fatigue in Bi_(4-x)La_xTi_3O_(12) thin films.Appl.Phys.Lett.,2002,80:3591-3593
[18]D.H.Bao,S.K.Lee,X.H.Zhu et al.Growth,structure and properties of all-epitaxial ferroelectric(Bi,La)_4Ti_3O_(12)/Pb(Zr_(0.4)Ti_(0.6))O_3/(Bi,La)_4Ti_3O_(12) trilayered thin films on SrRuO_3-covered SrTiO_3(011) substrates.Appl.Phys.Lett.,2005,86:082906-082908
[19]B.E Park,H.Ishiwara.Formation of silicate-added(Bi,La)_4Ti_3O_(12) films on LaAlO_3/Si(100) structures.Integr.Ferroelectr.,2003,52:179-186
[20]M.Jain,B.S.Kang and Q.X.Jia.Effect of conductive LaNiO_3 electrode on the structural and ferroelectfic properties of Bi_(3.25)La_(0.75)Ti_3O_(12) film.Appl.Phys.Lett.,2006,89:242903-242905
[21]方俊鑫,殷之文.电介质物理学.北京:科学出版社,1998,p 307-440
[22]黄昆,韩汝琦.固体物理学.北京:高等教育出版社,1988,p 32-33
[23]M.Dawber,K.M.Rabe,J.F.Scott.Physics of thin-film ferroelectric oxides. Review of modern physics,2005,77:1083-1131
[24]W.J.Takei,N.P.Formigoni,M.H.Francombe.Preparation and epitaxy of sputtered films of ferroelectric Bi_4Ti_3O_(12).J.Vacuum Science and Technology,1970,7:442-448
[25]S.K.Dey,K.D.Budd,D.A.Payne.Thin-Film ferroelectrics of PZT by Sol-Gel Processing.IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,1988,35:80-81
[26]M.Oikawa and K.Toda.Preparation of Pb(Zr,Ti)O_3 Thin-Films by electron Beam Evaporation Technique.Appl.Phys.Lett.,1976,29:491-492
[27]R.A.Rupp,A.E.Krumins,Karl Kerperin et al.Holographic investigation of Pb_(0.9)La_(0.1)(Zr_(0.65)Ti_(0.35))_(0.975)O_3 close to the diffuse phase transition.Phys.Rev.B,1989,39:9541-9554
[28]M.Ishida,H.Matsunami and T.Tanaka.Electro-optic effects of PLZT thin films.Appl.Phys.Lett.,1977,31:433-435
[29]T.Kawaguchi,K.Mizuuchi,K.Yamamoto et al.Fabrication of thin-film waveguide QPM-SHG devices by domain-inverted liquid-phase epitaxy.Journal of Crystal Growth,1998,191:125-129
[30]C.A.Araujo,J.F.Scott,R.B.Godfrey et al.Analysis of switching transients in KNbO_3 ferroelectric memories.Appl.Phys.Lett.,1986,48:1439-1440
[31]J.T.Evans and R.Womack.An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell.IEEE Journal of Solid State Circuits,1988,23:1171-1175
[32]G.C.Messenger and F.N.Coppage.Ferroelectric Memories:A Possible Answer to the hardened Nonvolatile Question.IEEE Transaction on Nuclear Science,1988,35:1461-1466
[33]D.W.Bondurant.Ferroelectric Memory Evaluation and Development System.IEEE,1991:308-309
[34]W.A.Geideman.Progress in Ferroelectric Memory Technology.IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,1991,38:704-711
[35]J.F.Scott and C.A.Paz de Araujo.Ferroelectric Memories.Science,1989,246:1400-1405
[36] M. T. Escote, F. M. Pontes and G. P. Mambrini. Improvement of the ferroelectric properties of ABO_3 (A=Pb, Ca, Ba; B=Ti, Zr) films. Journal of the European Ceramic Society, 2005, 25: 2341-2345
[37] K. B. Lee and S. B. Desu. Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti)O_3-based high-density nonvolatile ferroelectric memories. Current Applied Physics, 2001,1: 379-384
[38] J. F. Scott, C. A. Paz de Araujo and L. D. McMillan et al. Ferroelectric Thin Films in Integrated Microelectronic Devices. Ferroelectrics, 1992,133:47-50
[39] H. N. Al-Shareef, D. Dimos, W. L. Warren et al. Voltage offsets and imprint mechanism in SBT thin films. J. Appl. Phys., 1996, 80:4573-4580
[40] T. Yu, Z. X. Shen, W. S. Toh et al. Size effect on the ferroelectric phase transition in SrBi_2Ta_2O_9 nanoparticles. J. Appl. Phys., 2003, 94: 618-620
[41] J. Lettieri, Y. Jia, S. J. Fulk et al. Optimization of the growth of epitaxial SrBi_2Ta_2O_9 thin films by pulsed laser deposition. Thin Solid Films, 2000, 379: 64-71
[42] B. H. Park, B. S. Kang and S. D. Bu et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature, 1999,401: 682-684
[43] N. K. Kim, S. J. Yeom and S. Y. Kweon et al. (Bi,La)_4Ti_3O_(12) (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Appl. Phys. Lett, 2004, 85: 4118-4220
[44] Y. Hou, X. H. Xu and H. Wang et al. Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared on Si(100) by metalorganic decomposition method. Appl. Phys. Lett., 2001, 78: 1733-1735
[45] U. Chon, J. S. Shim and H. M. Jang et al. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate. J. Appl. Phys., 2003, 93: 4769-4775
[46] C. H. Yang, Z. Wang and J. F. Hu et al. Characteristics of metal-ferroelectric- insulator-semiconductor structure using a Nd-doped Bi_4Ti_3O_(12) ferroelectric layer. Journal of Crystal Growth, 2004, 267: 543-547
[47] S. S. Kim, J. S. Song and S. C. Kwon. Ferroelectric (Bi,La)_4Ti_3O_(12) thin films deposited on Pt(111)/Ti/SiO_2/Si and p-type Si(100) substrates. Journal of Crystal Growth,2004,271:90-98
[48]W.J.Kim,S.S.Kim,K.Jang et al.Ferroelectric Bi_(3.4)Eu_(0.6)Ti_3O_(12) thin films deposited on Si(100) and Pt/Ti/SiO_2/Si(100) substrates by a sol-gel process.Journal of Crystal Growth,2004,262:327-333
[49]C.L.Sun,S.Y.Chen,S.B.Chen et al.Effect of annealing temperature on physical and electrical properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on Al_2O_3-buffered Si.Appl.Phys.Lett.,2002,80:1984-1986
[50]T.W.Chiu,W.Naoki,S.Kazuo et al.Effects of heating process on crystalline orientation and electrical properties of(Bi,La)_4Ti_3O_(12) thin films derived by chemical solution deposition method.Integr.Ferroelectr.,2004,62:189-192
[51]K.T.Kim,C.I.Kim,D.H.Kang et al.Effect of grain size on the ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.International Journal of Modern Physics B,2002,16:4469-4474
[52]J.C.Bae,S.S.Kim,W.J.Kim et al.Ferroelectric lanthanum-substituted Bi_4Ti_3O_(12)thin films fabricated on p-type Si(100) substrates by a sol-gel method.Thin Solid Film,2004,468:23-27
[53]A.Hardy,D.Mondelaers,M.K.Van Bael et al.Synthesis of(Bi,La)_4Ti_3O_(12) by a new aqueous solution-gel route.Journal of the European Ceramic Society,2004,24:905-909
[54]张端明、赵修建、李智华等.脉冲激光沉积动力学与玻璃基薄膜,湖北:湖北科学技术出版社,2007,P36-28.
[55]T.Kojima,T.Sakai,T.Watanabe.Large remanent polarization of(Bi,Nd)_4Ti_3O_(12)epitaxial thin films grown by metalorganic chemical vapor deposition.Appl.Phys.Lett.,2002,80:2746-2748
[56]T.Watanabe,A.Saiki,K.Saito et al.Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi_4Ti_3O_(12) thin films prepared by metalorganic chemical vapor deposition.J.Appl.Phys.,2001,89:3934-3938
[57]张端明、李智华、郁伯铭等.脉冲激光制备薄膜材料的机理.中国科学(A 辑).2001,31:743-753
[58]张端明,候思普,关丽等,脉冲激光制备薄膜材料的烧蚀机理.物理学报,2004, 53:2237-2243.
[59]X.Y.Tan,D.M.Zhang,Z.H.Li et al.Ionization effect to plasma expansion study during nanosecond pulsed laser deposition.Phys.Lett.A.,2007,370:64-69
[60]张端明,关丽,郁伯铭,李智华等,脉冲激光制膜过程中等离子体演化规律的研究,物理学报,2003,52:242-246
[61]L Guan,D.M.Zhang,Xu Li,Z.H.Li,X.Y.Tan et al.Role of pulse repetition rate in film growth of pulsed laser deposition.2008,266:57-62
[62]D.M.Zhang,L Guan,Z.H.Li,G J.Pan,H.Z.Sun.Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition,Sur.Coat.Techn.,2006,200:4027-4031
[63]P Muralt.Piezoelectric and pyroelectric microsystems based on ferroelectric thin films.Ferroelectrics,1996,1:145-151
[64]I.L.Baginsky,E.G.Kostsov and L.N.Sterelykhina.Electronic devices based on niobate barium-strontium thin film.IEEE 7~(th) International Symposium on Applications of Ferroelectrics,1990:302-305
[65]F.Y.Chen,Y.K.Fang,C.Y.Shu et al.Numerical analysis ofa PbTiO_3 ferroelectric thin-film infrared optical diode.IEEE Transactions on Electron Devices,1997,44:937-942
[66]M.Quaddari,S.Delprat,F.Vidal et al.Microwave characterization of ferroelectric thin film materials.IEEE Transactions on Microwave Theory and Techniques,2005,53:1390-1397
[67]周志刚,王耘波,王华等.铁电存储器研究进展.信息记录材料,2002,3:31-35
[68]S.Sinharoy,H.Buhay,D.R.Lampe,et al.Integration of ferroelectric thin films into nonvolatile memorys.Journal of Vacuum Science and Technology,1992,A10:1554-1561
[69]D.R.Lampe,D.A.Adams,M.Austin,et al.Processing integration of the ferroelectric memory FFETs for NDRO FeRAM.Ferroelectrics,1992,133:61-64
[70]M.K.Choi,B.G.Jeon,N.Jang,et al.A 0.25μm 3.0-V 1T1C 32-Mb Nonvolatile Ferroelectric RAM With Address Transition Detector and Current Forcing Latch Sense Amplifier Scheme,IEEE J.solid-state circuits,2002,37:1472-1476
[71] Z Jia, T. l. Ren, D Xie, et al. A Novel Scheme Of Cross Bitlines For FeRAM Array, ISIE2005 shanghai, 2005,4,23
[72] H. B. Kang, J. J. Lee, J. H. Ahn, et al. A Double-Gate Cell (DGC) FeRAM With Non-Destructive Read Out (NDRO) and Random Access Scheme For Nanoscale and Terabit Non-Volatile Memory, ISIE2005 shanghai, 2005, 4, 23
[73] D.Y. Choi, J. H. Park, H. J. Joo, et al. Novel BC Plug Technology for Highly Reliable Mass Productive 0.18μm 1T1C COB Embedded FRAM, ISIE2005 shanghai, 2005,4,23
[74] T. Eshita. FRAM Reliability Issues and Improvement for Advanced FRAM, ISIE2005 shanghai, 2005,4,23
[75] Y. Murakuki. High Density and Low Power Non-Volatile FeRAM With Non-Driven Plate, Selected Driven Bit-Line And Complimentary Shielded Bit-Line Scheme, ISIE2005 shanghai, 2005,4,23
[76] S Sun, S. Bob, C. Terri, and D. Tom. Retention Lifetime Prediction For FRAM, ISIE2005 shanghai, 2005,4,23
[77] G. W. Taylor. Electrical properties of niobium-doped ferroelectric Pb(Zr,Sn,Ti)O_3 ceramics. J. Appl. Phys., 1967,38: 4697-4706
[78] H. M. Duiker, P. D. Beale, J. F. Scott et al. Fatigue and switching in ferroelectric memories: theory and experiment. J. Appl. Phys., 1990, 68: 5783-5791
[79] G. A. C. M. Spierines, M. J. E. Ulenaers, G. L. M. Kampscher et al. Preparation and ferroelectric properties of PbZr_(0.53)Ti_(0.47)O_3 thin films by spin coating and metal-organic decomposition. J. Appl. Phys., 1991, 70:2290-2298
[80] G. Arit and N. A. Pertsev. Force constant and effective mass of 90°domain walls in ferroelectric ceramics. J. Appl. Phys., 1991, 70: 2283-2289
[81] Q. Y. Jiang, W. W. Cao and L. E. Cross. Electric fatigue in lead zirconate titanate ceramics. Journal of the American Ceramic Society, 1994, 77: 211-215
[82] W. L. Warren, B. A. Tuttle, D. Duane et al. Imprint in Ferroelectric Capacitors. Jpn. J. Appl. Phys., 1996,35: 1521-1524
[83] M. Takashi, W. Hitoshi and C. A. Paz Araujo, Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O_3 Thin-Film Capacitors. Jpn. J.Appl. Phys., 1993, 32:4168-4174
[84] S. Sadashivan, S. Agganwal, T. K.Song et al. Evaluation of Imprint in Fully Integrated (La,Sr)CoO_3/Pb(Nb,Zr,Ti)O_3/(La,Sr)CoO_3 Ferroelectric Capacitors. J. Appl. Phys., 1998, 83: 2165-2168
[85] H. N. Al-Shareel, D. Dimos. Voltage Offsets and Imprint Mechanism in SrBi_2Ta_2O_9 Thin Films. J. Appl. Phys., 1996, 80: 4573-4577
[86] C. Y. Yau, R. Palan, K. Tran et al. Raman study of Bi site-occupancy effect on orientation and polarization in Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2004, 85: 4714-4716
[87] D. Wu, A. D. Li, N. B. Ming et al. Structure and electrical properties of Bi_(3.15)Nd_(0.85)Ti_3O_(12) ferroelectric thin films. J. Appl. Phys., 2004, 95: 4275-4281
[88] J. H. Ma, X. J. Meng, J. L. Sun et al. Ferroelectric and optical properties of Bi_(3.25)Nd_(0.75)Ti_3O_(12) thin films prepared by a chemical solution method. J. Phys. D: Appl. Phys., 2004, 37: 3160-3164
[89] U. Chon, H. M. Jang, M. G. Kim et al. Layered perovskites with giant spontaneous polarizations for nonvolatile memories. Phys. Rev. Lett., 2002, 89: 087601-087604
[90] S. T. Zhang, X. J. Zhang, H. W. Cheng et al. Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2003, 83: 4378-4380
[91] X. L. Zhong, J. B. Wang, X. J. Zheng et al. Structure evolution and ferroelectric and dielectric properties of Bi_(3.5)Nd_(0.5)Ti_3O_(12) thin films under a moderate temperature annealing. Appl. Phys. Lett., 2004, 85: 5661-5663
[92] J. H. Li, Y. Qiao, X. L. Liu et al. Microstructure and ferroelectric properties of sol-gel derived Bi_()3.15Nd_(0.85)Ti_3O_(12) thin films on Pt/Ti/SiO_2/Si(100). Appl. Phys. Lett., 2004, 85: 3193-3195
[93] A. Garg, A. Snedden, P. Lightfoot et al. Investigation of structural and ferroelectric properties of pulsed-laser-ablated epitaxial Nd-doped bismuth titanate films. J. Appl. Phys., 2004,96: 3408-3412
[94] A. Garg, Z. H. Barber, M. Dawber et al. Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi_(4-x)Nd_xTi_3O_(12) films. Appl. Phys. Lett., 2003, 83: 2414-2416
[95] X. S. Gao, J. M. Xue, J. Wang et al. Ferroelectric behaviors and charge carriers in Nd-doped Bi_4Ti_3O_(12) thin films.J.Appl.Phys.,2005,97:034101-034105
[96]李标荣.电子陶瓷工艺原理.武汉:华中理工大学出版社,1986:P3-59
[97]P.C.Joshi.Electrical studies on rapid thermally processed ferroelectric Bi_4Ti_3O_(12)thin films by Metallo-organic solution deposition.J.Appl.Phys.,1992,72:5827-5833
[98]H.Wendt,A.Spitzer,W.Bensch et al.Improvement of Oxide quality by rapid thermal annealing.J.Appl.Phys.,1990,67:7531-7535
[99]V.Chikarmace,C.Sudhama,J.Kim et al.Effect of post-deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate titanate(65/35) thin film capacitors.J.Vac.Sci.Technol.,1992,10(4):1562-1565
[100]H.Takashi,S.Tadashi.Preparation and switching kinetics of PZT thin films deposited by reactive sputtering.Jpn.J.Appl.Phys.,1991,30:2159-2163
[101]M.W.Chu,M.Ganne,M.T.Caldes,L.Brohan.X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds:Bi_(4-x)La_xTi_3O_(12)(x=0,0.5,0.75,1.0,1.5,and 2.0).J.Appl.Phys.2002,91:3178-3187
[102]H.N.Lee,D.Hesse.Anisotropic ferroelectric properties of epitaxially twinned Bi_(3.25)La_(0.75)Ti_3O_(12) thin films grown with three different orientations.Appl.Phys.Lett.,2002,80:1040-1042
[103]Y.Shimakawa,Y.Kubo,Y.Tauchi et al.Crystal and electronic structures of Bi_(4-x)La_xTi_3O_(12) ferroelectric materials.Appl.Phys.Lett.,2001,79:2791-2793
[104]K.T.Kim,C.I.Kim.Effect of bismuth excess on the crystallization of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on Pt/Ti/SiO_2/Si substrate.Microelectronic Engineering,2004,71:266-271
[105]J.L.Lin,T.L.Chang,W.T.Lin.Effects of excess Bi concentration,buffered Bi_2O_3layer,and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited Bi_(3.25)La_(0.75)Ti_3O_(12) films.Journal of electronic materials.2004,33:1248-1252.
[106]S.Kojima,S.Shimada.Soft mode spectroscopy of bismuth titanate single crystals Physica B. 1996, 219-220: 617-619
[107] S. Kojima, R. Imaizumi, S. Hamazake, M. Takashige. Raman Scattering Study of Bismuth Layer-Structure Ferroelectrics. Jpn. J. Appl. Phys., Part 1. 1994, 33: 5559-5564
[108] J. F. Meng, P. S. Dobal, R. S. Katiyar, G. T. Zou. Optical phonon modes and phase transition in the Bi_4Ge_(3-x)Ti_xO_(12) ceramic system. J. Raman Spectrosc.1998, 29: 1003-1008
[109] H. Idink, V. Srikanth, W. B. White, E. C. Subbarao. Raman study of low temperature phase transitions in bismuth titanate, Bi_4Ti_3O_(12). J. Appl. Phys. 1994, 76: 1819-1823
[110] N. Sugita, E. Tokuitsu, M. Osada, M. Kakihana. In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_(4-x)La_xTi_3O_(12) Films. Jpn. J. Appl. Phys. Part 2. 2003, 42: L944-L945
[111] S. S. Kim, T. K. Song, J. K. Kim, J. H. Kim. Ferroelectric properties of vanadium-doped Bi_4Ti_3O_(12) thin films deposited by a sol-gel method. J. Appl. Phys. 2002, 92:2213-2215
[112] M. M. Kumar, A. G. Ye. Dielectric and electric properties of donor- and acceptor-doped ferroelectric SrBi_2Ta_2O_9. J. Appl. Phys. 2001, 90: 934-938
[113] C. A. Paz de Araujo, L. D. McMillan, B. M. Melnick, J.D. Cuchiaro, J.F. Scott. Ferroelectric Memories. Ferroelectrics 1990, 104: 241-246
[114] Cheol Seong Hwang et al. A comparative study on the electrical conduction mechanisms of (Ba_(0.5)Sr_(0.5))TiO_3 thin films on Pt and IrO_2 electrodes. J. Appl. Phys. 1998, 83: 3703-6.
[115] Z. L. Liu, C. C. Wang, M. Chen, Y. Wang, K.L. Yao. Effects of Pr_6O_(11) doping on the microstructures and properties of Bi_4Ti_3O_(12) ferroelectric ceramics. Mater. Lett., 2004,58:3648-3651
[116] M. Chen, Z. L. Liu, C. C. Wang, X. S. Yang, K.L. Yao. Ferroelectric properties of Pr_6O_(11)-doped Bi_4Ti_3O_(12) .Solid State Communications. 2004, 130: 735-739
[117] Hirofumi Matsuda, Sachiko Ito, and Takashi Iijima. Uniform field-induced strain in a/b-axes-oriented Bi_(3.9)Pr_(0.1)Ti_3O_(12) thick films on IrO_2/Si substrates for lead-free piezoelectric microdevice applications. Appl. Phys. Lett., 2004, 85: 1220-1222
[118] G. D. Hu, S. H. Fan, X. Cheng. Anisotropy of ferroelectric and piezoelectric properties of Bi_(3.15)Pr_(0.85)Ti_3O_(12) thin films on Pt(100)/Ti/SiO_2/Si substrates. J. Appl. Phys. 2007, 101:054111-054116
[119] P. R.Graves, G. Hua, S. Myhra, J. G. Tompson. The Raman Modes of the Aurivillius Phases: Temperature and Polarization Dependence J Solid State Chem. 1995, 114: 112-122
[120] Y. Wang, G. Xu, X. Zhang, Y. Feng, W. Tang, G. Cheng, Y. Zhu. Structural and optical properties of Bi_(4-x)Nd_xTi_3O_(12) thin films prepared by metal-organic solution deposition. Mater. Lett., 2004, 58: 813-816
[121] C. B. Eom, A. F. Marshall, S. S. Laderman, R. D. Jacowitz, T. H.Geballe. Epitaxial and Smooth Films of a-Axis YBa_2Cu_3O_7. Science. 1990,249: 1549-52
[122] S. E. Cummins, L. E. Cross. Electrical and Optical Properties of Ferroelectric Bi_4Ti_3O_(12) Single Crystals. J. Appl. Phys., 1968, 39: 2268-2274
[123] T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, M. Miyayama. Effect of cosubstitution of La and V in Bi_4Ti_3O_(12) thin films on the low-temperature deposition. Appl. Phys. Lett., 2001, 80: 100-102
[124] K. Kim, M. Miayama, H. Yanagida. Electrica anisotropty and a plausible explanation for dielectric anomaly of Bi_4Ti_3Ti_(12) single crystal. Mater. Res. Bull. 1996,31:121-131
[125] R. E. Melgarejo, M. S. Tomar, S. Bhaskar, P. S. Dobal, R. S. Katiyar. Large ferroelectric response in Bi_(4-x)Nd_xTi_3O_(12) films prepared by sol-gel process. Appl. Phys. Lett., 2002, 81: 2611-2613
[126] D. Wu, A. D. Li, T. Zhu, Z. F. Li, Z. G. Liu, N. B. Ming. J. Mater. Res. 2001, 16: 1325-1329
[127] Y. Noguchi, M. Miyayama. Large remanent polarization of vanadium-doped Bi_4Ti_3O_(12). Appl. Phys. Lett. 2001, 78: 1903-1905
[128] M. Hiroshi, L. Naoya, T. Daichi et al. Electromechanical properties of Nd-doped Bi_4Ti_3O_(12) films: a candidate for lead-free thin-film piezoelectrics. Appl. Phys. Lett., 2002,78: 10-12
[129] U. Hiroshi, Y. Hiroki, O. Isao et al. Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd~(3+)/V~(5+) consubstitution. Appl. Phys. Lett, 2002, 80:2229-2231
[130] X. S. Wang, H. Ishiwara. Polarization enhancement and coercive field reduction in W- and Mo-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. Appl. Phys. Lett., 2003, 82: 2479-2481
[131] S. T. Zhang, Y. F. Chen, J. Wang et al. Ferroelectric properties of La and Zr substituted Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2004, 84: 3660-3662
[132] S. G. Hur, D. H. Park, T. W. Kim et al. Evolution of the chemical bonding nature of ferroelectric bismuth titanate upon cation substitution. Appl. Phys. Lett, 2004, 85: 4130-4132
[133] H. Ohki, X. S. Wang, H. Ishiwara. Ferroelectric Properties of Mo-Doped Bi_(4-x)La_xTi_3O_(12) Films. Integr. Ferroelectr, 2004, 61: 37-42
[134] J. S. Kim, C. W. Ahn, H. J. Lee et al. Retention characteristics of V-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin film. Ceramic International, 2004, 30: 1565-1568
[135] U. Chon and H. Jang. Recovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi_(4-x)La_xTi_3O_(12)/Pt capacitor. Appl. Phys. Lett, 2003, 82: 1577-1579
[136] S. H. Kim, S. H. Kang, I. W. Kim et al. Ferroelectric properties of Ta- and Mn-doped B_(3.3)La_(1.0)Ti_3O_(12) thin films. Ferroelectrics, 2002,271: 167-172
[137] W. Li, Y. Yin, D. Su et al. Ferroelectric properties of polycrystalline bismuth titanate films by Nd~(3+)/W~(6+) cosubstitution. J. Appl. Phys, 2005, 97: 084102
[138] W. Li, J. Gu, C. H. Song et al. B-site doping effect on ferroelectric property of bismuth titanate ceramic. J. Appl. Phys, 2005, 98: 114104
[139] L. P. Lv, S. T. Zhang, J. Wang et al. Effects of Zr substitution on structures and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. J. Phys. D: Appl. Phys, 2005, 38:1355-1360
[140] Y. Ding, J. S. Liu, H. X. Qin. Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes. Appl. Phys. Lett. 2001,78:4175-4177.
[141] S. T. Zhang, C. S. Xiao, A. A. Fang, B. Yang, B. Sun, Y. F. Chen, Z. G Liu, and N. B. Ming. Ferroelectric properties of Sr_2Bi_4Ti_5O_(18) thin films. Appl. Phys. Lett. 2000, 76:3112-3114.
[142] J. F. Scott, C. A. Araujo, B. M. Melnick, L. D. Mcmillan, R. Zuleeg. Quantitative measurement of space-charge effects in lead zirconate-titanate memories. J. Appl. Phys. 1991, 70: 382-388.
[143] L. Baudry. Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO_3 thin film capacitor. J. Appl. Phys. 1999, 86: 1096-1105.
[144] R. D. Shannon. Crystal Physics, Diffraction, Theoretical and General Crystallography. Acta Crystallogr. Sect A: Crystal Physics, Diffraction, Theoretical and General Crystallography. 1976, 32: 751-767
[145] R. E. Melgarelo, M. S. Tomar, S. Bhaskar, P. S. Dobal, R.S Katiyar. Large ferroelectric response in Bi_(4-x)Nd_xTi_3O_(12) films prepared by sol-gel process. Appl. Phys. Lett. 2002, 81:2611-2613
[146] B. S. Kang, B. H. Park, S. D. Bu, S. H. Kang, T. W. Noh. Different fatigue behaviors of SrBi_2Ta_2O_9 and Bi_3TiTaO_9 films: Role of perovskite layers. Appl. Phys. Lett. 1999, 75:2644-2646
[147] Yuji Noguchi, Takahiro Matsumoto and Masaru Miyayama. Impact of Defect Control on the Polarization Properties in Bi_4Ti_3O_(12) Ferroelectric Single Crystals. Jpn. J. Appl. Phys., Part 2. 2005,44: L570-L572
[148] K Yamamoto, Y Kitanaka, M Suzuki, M Miyayama, Y Noguchi, C Moriyoshi, Y Kuroiwa. High-oxygen-pressure crystal growth of ferroelectric Bi_4Ti_3O_(12) single crystals. Appl. Phys. Lett. 2007, 91:162909-162911
[149] Z. H. Bao, Y. Y. Yao, Y. N. Zhu, Y. N. Wang. Study on ferroelectric and dielectric properties of niobium doped Bi_4Ti_3O_(12) ceramics and thin films prepared by PLD... Mater. Lett., 2002, 56: 861-866.
[150] L. N. Zhang, R. Q. Chu, S. C. Zhao, G. R. Li, Q. R. Yin. Microstructure and electrical properties of niobium doped Bi_4Ti_3O_(12) layer-structured piezoelectric ceramics. Materials science and Engineering B. 2005, 116: 99-103
[151] T. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E. H. Poindexter, D. J. Keeble. Vacancy formation in (Pb,La)(Zr,Ti)O_3 capacitors with oxygen deficiency and the effect on voltage offset. Appl. Phys. Lett., 2000. 77: 127-129
[152] L Baudy. Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO_3 thin film capacitor J. Appl. Phys. 1999. 86: 1096-1105
[153] Q. Y. Jiang, E. C. Subbarao, L. E. Cross. Effect of composition and temperature on electric fatigue of La-doped lead zirconate titanate ceramics. J. Appl. Phys. 1994, 75:7433-7743
[154] H. L. Liu, S Yoon, S. L. Cooper, S. W. Cheng, P. D. Han and D.A Payne. Probing anisotropic magnetotransport in manganese perovskites using Raman spectroscopy. Phys. Rev. B. 1998, 58: 10115-10118
[155] T. X. Xu, J. Y. Shen, Z. M. Bo, C. X. Fangand and Y. F. Qu 1993 Electron Ceramic Materials, (Tianjin: Tianjin University Press).
[156] Y. Shimakawa, Y. Kubo, Y. Nakagawa, S. Goto, T. Kamiyama, H. Asano and F. Izumi. Crystal structure and ferroelectric properties of ABi_2Ta_2O_9 (A=Ca, Sr, and Ba). Phys. Rev. B, 2000, 61: 6559-6564
[157] N. K. Singh, R. N. P. Choudhary, A. Panigrahi. Ferroelectric phase transition in Ba_5LaTi_(3-x)Zr_xNb_7O_(30) [x=0, 1, 2, 3] ceramics. Mater. Lett., 2002, 57: 36-42
[158] Y. M. Kan, X. H. Jin, G. J. Zhang, P. L. Wang, Y. B. Cheng and D. S. Yan. Lanthanum modified bismuth titanate prepared by a hydrolysis method. J Mater Chern, 2004,14:3566-3570
[159] S. K. Singh, H. Ishiwara. Improved fatigue endurance in Mn-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. Solid State Communications. 2006,140: 430-434
[160] M. W. Chu, M. Ganne, M. T Caldes, E. Gautier, and L. Brohan. X-ray photoemission spectroscopy characterization of the electrode-ferroelectric interfaces in Pt/Bi_4Ti_3O_(12)/Pt and Pt/Bi_(3.25)La_(0.75)Ti_3O_(12)/Pt capacitors: Possible influence of defect structure on fatigue properties. Phys. Rev. B., 2003, 61: 014102-014113
[161] Y. B. Park, S. M. Jang, J. K. Lee and J. W. Park. Influence of second phases on the ferroelectric properties of SrBi_2TaNbO_9 thin films fabricated by radio-frequency magnetron sputtering. J. Vac. Sci. Technol. A., 2000, 18: 17-22
[162] W. Shin and S. Yoon. Improvement in ferroelectric properties of SrBi_2Ta_2O_9 thin films with Bi_2O_3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition. Appl. Phys. Lett., 2001, 79: 1519-1521
[163] Y. Fujimori, N. Izumi, T. Nakamura, A. Kamisawa and Y. Shigematsu. Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor. Jpn. J. Appl. Phys., 1997, 36: 5935-5938
[164] K. T. Kim, C. I. Kim. The effect of orientation on structure and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films .Surface and Coatings Technology. 2004, 177: 770-773
[165] S. K. Kim, M. Miyayama and H. Yanagida. Electrical anisotropy and a plausible explanation for dielectric anomaly of Bi_4Ti_3O_(12) single crystal Mater. Res. Bull. 1996,31:121-131
[166] O. Hiroshi and I. Hiroshi. Characterization of BLT films formed by using a flash-annealing process on Pt/(Cr,Ti)N/TiN/Ti bottom electrode. Integr. Ferroelectr., 2003,52:215-222
[167] R. Bouregba, G. Poullain, B. Vilquin. Orientation control of textured PZT thin films sputtered on silicon substrate with TiO_x seeding. Mater. Res. Bull., 2000, 35: 1381-1390
[168] K. Aoki, Y. Fukuda, K. Numata. Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique. Jpn. J. Appl. Phys., 1995, 34: 192-195
[169] T. Hase, T. Sakuma, Y. Miyasaka, K. Hirata, Preparation of Pb(Zr,Ti)O_3 Thin Films by Multi-Target Sputtering. Jpn. J. Appl. Phys., 1993, 32: 4061-4064
[170] S. T. Kim, H. H. Kim, M. Y. Lee, et al. Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O_3 films, Jpn. J. Appl. Phys., 1997, 36: 294-300
[171] K. Abe, H. Tomita, H. Toyoda et al. PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering. Jpn. J. Appl. Phys., 1991, 30: 2152-2154.
[172] K. Sreenivas, I. Reaney, T. Maeder et al. Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration, J. Appl. Phys., 1994, 75: 232-239
[173] A. Z. Simoes, R. F. C. Pianno, A. Ries et al. a-b axis-oriented lanthanum doped Bi_4Ti_3O_(12) thin films grown on a TiO_2 buffer layer. J. Appl. Phys., 2006, 100: 084106-084108
[2]J.W.Zhai,B.Shen,X.Yao et al.Growth and ferroelectric study of Bi_(3.25)La_(0.75)Ti_3_(12) thin films on different substrates.Journal of Crystal Growth,2004,267:110-116
[3]S.Y.Chen,C.L.Sun,S.B.Chen et al.Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on ultrathin Al_2O_3 buffered Si for ferroelectric memory application.Appl.Phys.Lett.,2002,80:3168-3170
[4]A.Z.Simoes,A.Ries,F.M.Filho et al.Fatigue-free behavior of Bi_(3.25)La_(0.75)Ti_3O_(12)thin films grown on several bottom eletrodes by the polymeric precursor method.Appl.Phys.Lett.,2004,85:5962-5964
[5]J.C.Bae,S.S.Kim,E.K.Choi et al.Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method.Thin Solid Films,2005,472:90-95
[6]K.T.Kim,C.I.Kim.Characterization of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by metal organic decomposition method.Thin Solid Films,2005,478:6-12
[7]K.T.Kim,C.I.Kim.Electrical conduction behavior of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared by a metalorganic decomposition method.Thin Solid Films,2004,177-178:774-778
[8]N.K.Kim,S.J.Yeom,S.Y.Kweon et al.(Bi,La)_4Ti_3O_(12)(BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices.Appl.Phys.Lett.,2004,85:4118-4120
[9]钟维烈.铁电体物理学.北京:科学出版社,1998,p248-264
[10]M.S.Tomar,R.E.Melgarejo,A.Hidalgo et al.Structural and ferroelectric studies of Bi_(3.44)La_(0.56)Ti_3O_(12) films.Appl.Phys.Lett.,2003,83:341-343
[11]K.T.Kim,C.I.Kim.The effect of orientation on structure and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.Surf.Coat.Tech.,2004,177-178: 770-773
[12]Y.M.Sun,Y.C.Chen,Jon Yiew Gan et al.Ferroelectric properties of(117)- and (001)-oriented Bi_(3.25)La_(0.75)Ti_3O_(12) polycrystalline thin films.Appl.Phys.Lett.,2002,81:3221-3223
[13]S.T.Zhang,G.L.Yuan,J.Wang et al.Temperature-dependent effect of oxygen vacancy on polarization switching of ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.Solid State Commun.,2004,132:315-318
[14]S.Seo,J.G.Yoon,J.D.Kim et al.Hydrogen-induced degradation in ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12).Appl.Phys.Lett.,2002,81:1857-1859
[15]U.C.,K.B.Kim,H.M.Jang.Degradation mechanism of ferroelectric properties in Pt/Bi_(4-x)La_xTi_3O_(12)/Pt capacitors during forming gas annealing.Appl.Phys.Lett.,2001,79:2450-2452
[16]S.K.Lee,D.Hesse,U.Gosele et al.Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates.Appl.Phys.Lett.,2005,86:142903-142905
[17]J.K.Lee,C.H.Kim,H.S.Suh et al.Correlation between internal stress and ferroelectric fatigue in Bi_(4-x)La_xTi_3O_(12) thin films.Appl.Phys.Lett.,2002,80:3591-3593
[18]D.H.Bao,S.K.Lee,X.H.Zhu et al.Growth,structure and properties of all-epitaxial ferroelectric(Bi,La)_4Ti_3O_(12)/Pb(Zr_(0.4)Ti_(0.6))O_3/(Bi,La)_4Ti_3O_(12) trilayered thin films on SrRuO_3-covered SrTiO_3(011) substrates.Appl.Phys.Lett.,2005,86:082906-082908
[19]B.E Park,H.Ishiwara.Formation of silicate-added(Bi,La)_4Ti_3O_(12) films on LaAlO_3/Si(100) structures.Integr.Ferroelectr.,2003,52:179-186
[20]M.Jain,B.S.Kang and Q.X.Jia.Effect of conductive LaNiO_3 electrode on the structural and ferroelectfic properties of Bi_(3.25)La_(0.75)Ti_3O_(12) film.Appl.Phys.Lett.,2006,89:242903-242905
[21]方俊鑫,殷之文.电介质物理学.北京:科学出版社,1998,p 307-440
[22]黄昆,韩汝琦.固体物理学.北京:高等教育出版社,1988,p 32-33
[23]M.Dawber,K.M.Rabe,J.F.Scott.Physics of thin-film ferroelectric oxides. Review of modern physics,2005,77:1083-1131
[24]W.J.Takei,N.P.Formigoni,M.H.Francombe.Preparation and epitaxy of sputtered films of ferroelectric Bi_4Ti_3O_(12).J.Vacuum Science and Technology,1970,7:442-448
[25]S.K.Dey,K.D.Budd,D.A.Payne.Thin-Film ferroelectrics of PZT by Sol-Gel Processing.IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,1988,35:80-81
[26]M.Oikawa and K.Toda.Preparation of Pb(Zr,Ti)O_3 Thin-Films by electron Beam Evaporation Technique.Appl.Phys.Lett.,1976,29:491-492
[27]R.A.Rupp,A.E.Krumins,Karl Kerperin et al.Holographic investigation of Pb_(0.9)La_(0.1)(Zr_(0.65)Ti_(0.35))_(0.975)O_3 close to the diffuse phase transition.Phys.Rev.B,1989,39:9541-9554
[28]M.Ishida,H.Matsunami and T.Tanaka.Electro-optic effects of PLZT thin films.Appl.Phys.Lett.,1977,31:433-435
[29]T.Kawaguchi,K.Mizuuchi,K.Yamamoto et al.Fabrication of thin-film waveguide QPM-SHG devices by domain-inverted liquid-phase epitaxy.Journal of Crystal Growth,1998,191:125-129
[30]C.A.Araujo,J.F.Scott,R.B.Godfrey et al.Analysis of switching transients in KNbO_3 ferroelectric memories.Appl.Phys.Lett.,1986,48:1439-1440
[31]J.T.Evans and R.Womack.An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell.IEEE Journal of Solid State Circuits,1988,23:1171-1175
[32]G.C.Messenger and F.N.Coppage.Ferroelectric Memories:A Possible Answer to the hardened Nonvolatile Question.IEEE Transaction on Nuclear Science,1988,35:1461-1466
[33]D.W.Bondurant.Ferroelectric Memory Evaluation and Development System.IEEE,1991:308-309
[34]W.A.Geideman.Progress in Ferroelectric Memory Technology.IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,1991,38:704-711
[35]J.F.Scott and C.A.Paz de Araujo.Ferroelectric Memories.Science,1989,246:1400-1405
[36] M. T. Escote, F. M. Pontes and G. P. Mambrini. Improvement of the ferroelectric properties of ABO_3 (A=Pb, Ca, Ba; B=Ti, Zr) films. Journal of the European Ceramic Society, 2005, 25: 2341-2345
[37] K. B. Lee and S. B. Desu. Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti)O_3-based high-density nonvolatile ferroelectric memories. Current Applied Physics, 2001,1: 379-384
[38] J. F. Scott, C. A. Paz de Araujo and L. D. McMillan et al. Ferroelectric Thin Films in Integrated Microelectronic Devices. Ferroelectrics, 1992,133:47-50
[39] H. N. Al-Shareef, D. Dimos, W. L. Warren et al. Voltage offsets and imprint mechanism in SBT thin films. J. Appl. Phys., 1996, 80:4573-4580
[40] T. Yu, Z. X. Shen, W. S. Toh et al. Size effect on the ferroelectric phase transition in SrBi_2Ta_2O_9 nanoparticles. J. Appl. Phys., 2003, 94: 618-620
[41] J. Lettieri, Y. Jia, S. J. Fulk et al. Optimization of the growth of epitaxial SrBi_2Ta_2O_9 thin films by pulsed laser deposition. Thin Solid Films, 2000, 379: 64-71
[42] B. H. Park, B. S. Kang and S. D. Bu et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature, 1999,401: 682-684
[43] N. K. Kim, S. J. Yeom and S. Y. Kweon et al. (Bi,La)_4Ti_3O_(12) (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Appl. Phys. Lett, 2004, 85: 4118-4220
[44] Y. Hou, X. H. Xu and H. Wang et al. Bi_(3.25)La_(0.75)Ti_3O_(12) thin films prepared on Si(100) by metalorganic decomposition method. Appl. Phys. Lett., 2001, 78: 1733-1735
[45] U. Chon, J. S. Shim and H. M. Jang et al. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate. J. Appl. Phys., 2003, 93: 4769-4775
[46] C. H. Yang, Z. Wang and J. F. Hu et al. Characteristics of metal-ferroelectric- insulator-semiconductor structure using a Nd-doped Bi_4Ti_3O_(12) ferroelectric layer. Journal of Crystal Growth, 2004, 267: 543-547
[47] S. S. Kim, J. S. Song and S. C. Kwon. Ferroelectric (Bi,La)_4Ti_3O_(12) thin films deposited on Pt(111)/Ti/SiO_2/Si and p-type Si(100) substrates. Journal of Crystal Growth,2004,271:90-98
[48]W.J.Kim,S.S.Kim,K.Jang et al.Ferroelectric Bi_(3.4)Eu_(0.6)Ti_3O_(12) thin films deposited on Si(100) and Pt/Ti/SiO_2/Si(100) substrates by a sol-gel process.Journal of Crystal Growth,2004,262:327-333
[49]C.L.Sun,S.Y.Chen,S.B.Chen et al.Effect of annealing temperature on physical and electrical properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on Al_2O_3-buffered Si.Appl.Phys.Lett.,2002,80:1984-1986
[50]T.W.Chiu,W.Naoki,S.Kazuo et al.Effects of heating process on crystalline orientation and electrical properties of(Bi,La)_4Ti_3O_(12) thin films derived by chemical solution deposition method.Integr.Ferroelectr.,2004,62:189-192
[51]K.T.Kim,C.I.Kim,D.H.Kang et al.Effect of grain size on the ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films.International Journal of Modern Physics B,2002,16:4469-4474
[52]J.C.Bae,S.S.Kim,W.J.Kim et al.Ferroelectric lanthanum-substituted Bi_4Ti_3O_(12)thin films fabricated on p-type Si(100) substrates by a sol-gel method.Thin Solid Film,2004,468:23-27
[53]A.Hardy,D.Mondelaers,M.K.Van Bael et al.Synthesis of(Bi,La)_4Ti_3O_(12) by a new aqueous solution-gel route.Journal of the European Ceramic Society,2004,24:905-909
[54]张端明、赵修建、李智华等.脉冲激光沉积动力学与玻璃基薄膜,湖北:湖北科学技术出版社,2007,P36-28.
[55]T.Kojima,T.Sakai,T.Watanabe.Large remanent polarization of(Bi,Nd)_4Ti_3O_(12)epitaxial thin films grown by metalorganic chemical vapor deposition.Appl.Phys.Lett.,2002,80:2746-2748
[56]T.Watanabe,A.Saiki,K.Saito et al.Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi_4Ti_3O_(12) thin films prepared by metalorganic chemical vapor deposition.J.Appl.Phys.,2001,89:3934-3938
[57]张端明、李智华、郁伯铭等.脉冲激光制备薄膜材料的机理.中国科学(A 辑).2001,31:743-753
[58]张端明,候思普,关丽等,脉冲激光制备薄膜材料的烧蚀机理.物理学报,2004, 53:2237-2243.
[59]X.Y.Tan,D.M.Zhang,Z.H.Li et al.Ionization effect to plasma expansion study during nanosecond pulsed laser deposition.Phys.Lett.A.,2007,370:64-69
[60]张端明,关丽,郁伯铭,李智华等,脉冲激光制膜过程中等离子体演化规律的研究,物理学报,2003,52:242-246
[61]L Guan,D.M.Zhang,Xu Li,Z.H.Li,X.Y.Tan et al.Role of pulse repetition rate in film growth of pulsed laser deposition.2008,266:57-62
[62]D.M.Zhang,L Guan,Z.H.Li,G J.Pan,H.Z.Sun.Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition,Sur.Coat.Techn.,2006,200:4027-4031
[63]P Muralt.Piezoelectric and pyroelectric microsystems based on ferroelectric thin films.Ferroelectrics,1996,1:145-151
[64]I.L.Baginsky,E.G.Kostsov and L.N.Sterelykhina.Electronic devices based on niobate barium-strontium thin film.IEEE 7~(th) International Symposium on Applications of Ferroelectrics,1990:302-305
[65]F.Y.Chen,Y.K.Fang,C.Y.Shu et al.Numerical analysis ofa PbTiO_3 ferroelectric thin-film infrared optical diode.IEEE Transactions on Electron Devices,1997,44:937-942
[66]M.Quaddari,S.Delprat,F.Vidal et al.Microwave characterization of ferroelectric thin film materials.IEEE Transactions on Microwave Theory and Techniques,2005,53:1390-1397
[67]周志刚,王耘波,王华等.铁电存储器研究进展.信息记录材料,2002,3:31-35
[68]S.Sinharoy,H.Buhay,D.R.Lampe,et al.Integration of ferroelectric thin films into nonvolatile memorys.Journal of Vacuum Science and Technology,1992,A10:1554-1561
[69]D.R.Lampe,D.A.Adams,M.Austin,et al.Processing integration of the ferroelectric memory FFETs for NDRO FeRAM.Ferroelectrics,1992,133:61-64
[70]M.K.Choi,B.G.Jeon,N.Jang,et al.A 0.25μm 3.0-V 1T1C 32-Mb Nonvolatile Ferroelectric RAM With Address Transition Detector and Current Forcing Latch Sense Amplifier Scheme,IEEE J.solid-state circuits,2002,37:1472-1476
[71] Z Jia, T. l. Ren, D Xie, et al. A Novel Scheme Of Cross Bitlines For FeRAM Array, ISIE2005 shanghai, 2005,4,23
[72] H. B. Kang, J. J. Lee, J. H. Ahn, et al. A Double-Gate Cell (DGC) FeRAM With Non-Destructive Read Out (NDRO) and Random Access Scheme For Nanoscale and Terabit Non-Volatile Memory, ISIE2005 shanghai, 2005, 4, 23
[73] D.Y. Choi, J. H. Park, H. J. Joo, et al. Novel BC Plug Technology for Highly Reliable Mass Productive 0.18μm 1T1C COB Embedded FRAM, ISIE2005 shanghai, 2005,4,23
[74] T. Eshita. FRAM Reliability Issues and Improvement for Advanced FRAM, ISIE2005 shanghai, 2005,4,23
[75] Y. Murakuki. High Density and Low Power Non-Volatile FeRAM With Non-Driven Plate, Selected Driven Bit-Line And Complimentary Shielded Bit-Line Scheme, ISIE2005 shanghai, 2005,4,23
[76] S Sun, S. Bob, C. Terri, and D. Tom. Retention Lifetime Prediction For FRAM, ISIE2005 shanghai, 2005,4,23
[77] G. W. Taylor. Electrical properties of niobium-doped ferroelectric Pb(Zr,Sn,Ti)O_3 ceramics. J. Appl. Phys., 1967,38: 4697-4706
[78] H. M. Duiker, P. D. Beale, J. F. Scott et al. Fatigue and switching in ferroelectric memories: theory and experiment. J. Appl. Phys., 1990, 68: 5783-5791
[79] G. A. C. M. Spierines, M. J. E. Ulenaers, G. L. M. Kampscher et al. Preparation and ferroelectric properties of PbZr_(0.53)Ti_(0.47)O_3 thin films by spin coating and metal-organic decomposition. J. Appl. Phys., 1991, 70:2290-2298
[80] G. Arit and N. A. Pertsev. Force constant and effective mass of 90°domain walls in ferroelectric ceramics. J. Appl. Phys., 1991, 70: 2283-2289
[81] Q. Y. Jiang, W. W. Cao and L. E. Cross. Electric fatigue in lead zirconate titanate ceramics. Journal of the American Ceramic Society, 1994, 77: 211-215
[82] W. L. Warren, B. A. Tuttle, D. Duane et al. Imprint in Ferroelectric Capacitors. Jpn. J. Appl. Phys., 1996,35: 1521-1524
[83] M. Takashi, W. Hitoshi and C. A. Paz Araujo, Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O_3 Thin-Film Capacitors. Jpn. J.Appl. Phys., 1993, 32:4168-4174
[84] S. Sadashivan, S. Agganwal, T. K.Song et al. Evaluation of Imprint in Fully Integrated (La,Sr)CoO_3/Pb(Nb,Zr,Ti)O_3/(La,Sr)CoO_3 Ferroelectric Capacitors. J. Appl. Phys., 1998, 83: 2165-2168
[85] H. N. Al-Shareel, D. Dimos. Voltage Offsets and Imprint Mechanism in SrBi_2Ta_2O_9 Thin Films. J. Appl. Phys., 1996, 80: 4573-4577
[86] C. Y. Yau, R. Palan, K. Tran et al. Raman study of Bi site-occupancy effect on orientation and polarization in Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2004, 85: 4714-4716
[87] D. Wu, A. D. Li, N. B. Ming et al. Structure and electrical properties of Bi_(3.15)Nd_(0.85)Ti_3O_(12) ferroelectric thin films. J. Appl. Phys., 2004, 95: 4275-4281
[88] J. H. Ma, X. J. Meng, J. L. Sun et al. Ferroelectric and optical properties of Bi_(3.25)Nd_(0.75)Ti_3O_(12) thin films prepared by a chemical solution method. J. Phys. D: Appl. Phys., 2004, 37: 3160-3164
[89] U. Chon, H. M. Jang, M. G. Kim et al. Layered perovskites with giant spontaneous polarizations for nonvolatile memories. Phys. Rev. Lett., 2002, 89: 087601-087604
[90] S. T. Zhang, X. J. Zhang, H. W. Cheng et al. Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2003, 83: 4378-4380
[91] X. L. Zhong, J. B. Wang, X. J. Zheng et al. Structure evolution and ferroelectric and dielectric properties of Bi_(3.5)Nd_(0.5)Ti_3O_(12) thin films under a moderate temperature annealing. Appl. Phys. Lett., 2004, 85: 5661-5663
[92] J. H. Li, Y. Qiao, X. L. Liu et al. Microstructure and ferroelectric properties of sol-gel derived Bi_()3.15Nd_(0.85)Ti_3O_(12) thin films on Pt/Ti/SiO_2/Si(100). Appl. Phys. Lett., 2004, 85: 3193-3195
[93] A. Garg, A. Snedden, P. Lightfoot et al. Investigation of structural and ferroelectric properties of pulsed-laser-ablated epitaxial Nd-doped bismuth titanate films. J. Appl. Phys., 2004,96: 3408-3412
[94] A. Garg, Z. H. Barber, M. Dawber et al. Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi_(4-x)Nd_xTi_3O_(12) films. Appl. Phys. Lett., 2003, 83: 2414-2416
[95] X. S. Gao, J. M. Xue, J. Wang et al. Ferroelectric behaviors and charge carriers in Nd-doped Bi_4Ti_3O_(12) thin films.J.Appl.Phys.,2005,97:034101-034105
[96]李标荣.电子陶瓷工艺原理.武汉:华中理工大学出版社,1986:P3-59
[97]P.C.Joshi.Electrical studies on rapid thermally processed ferroelectric Bi_4Ti_3O_(12)thin films by Metallo-organic solution deposition.J.Appl.Phys.,1992,72:5827-5833
[98]H.Wendt,A.Spitzer,W.Bensch et al.Improvement of Oxide quality by rapid thermal annealing.J.Appl.Phys.,1990,67:7531-7535
[99]V.Chikarmace,C.Sudhama,J.Kim et al.Effect of post-deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate titanate(65/35) thin film capacitors.J.Vac.Sci.Technol.,1992,10(4):1562-1565
[100]H.Takashi,S.Tadashi.Preparation and switching kinetics of PZT thin films deposited by reactive sputtering.Jpn.J.Appl.Phys.,1991,30:2159-2163
[101]M.W.Chu,M.Ganne,M.T.Caldes,L.Brohan.X-ray photoelectron spectroscopy and high resolution electron microscopy studies of Aurivillius compounds:Bi_(4-x)La_xTi_3O_(12)(x=0,0.5,0.75,1.0,1.5,and 2.0).J.Appl.Phys.2002,91:3178-3187
[102]H.N.Lee,D.Hesse.Anisotropic ferroelectric properties of epitaxially twinned Bi_(3.25)La_(0.75)Ti_3O_(12) thin films grown with three different orientations.Appl.Phys.Lett.,2002,80:1040-1042
[103]Y.Shimakawa,Y.Kubo,Y.Tauchi et al.Crystal and electronic structures of Bi_(4-x)La_xTi_3O_(12) ferroelectric materials.Appl.Phys.Lett.,2001,79:2791-2793
[104]K.T.Kim,C.I.Kim.Effect of bismuth excess on the crystallization of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on Pt/Ti/SiO_2/Si substrate.Microelectronic Engineering,2004,71:266-271
[105]J.L.Lin,T.L.Chang,W.T.Lin.Effects of excess Bi concentration,buffered Bi_2O_3layer,and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited Bi_(3.25)La_(0.75)Ti_3O_(12) films.Journal of electronic materials.2004,33:1248-1252.
[106]S.Kojima,S.Shimada.Soft mode spectroscopy of bismuth titanate single crystals Physica B. 1996, 219-220: 617-619
[107] S. Kojima, R. Imaizumi, S. Hamazake, M. Takashige. Raman Scattering Study of Bismuth Layer-Structure Ferroelectrics. Jpn. J. Appl. Phys., Part 1. 1994, 33: 5559-5564
[108] J. F. Meng, P. S. Dobal, R. S. Katiyar, G. T. Zou. Optical phonon modes and phase transition in the Bi_4Ge_(3-x)Ti_xO_(12) ceramic system. J. Raman Spectrosc.1998, 29: 1003-1008
[109] H. Idink, V. Srikanth, W. B. White, E. C. Subbarao. Raman study of low temperature phase transitions in bismuth titanate, Bi_4Ti_3O_(12). J. Appl. Phys. 1994, 76: 1819-1823
[110] N. Sugita, E. Tokuitsu, M. Osada, M. Kakihana. In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_(4-x)La_xTi_3O_(12) Films. Jpn. J. Appl. Phys. Part 2. 2003, 42: L944-L945
[111] S. S. Kim, T. K. Song, J. K. Kim, J. H. Kim. Ferroelectric properties of vanadium-doped Bi_4Ti_3O_(12) thin films deposited by a sol-gel method. J. Appl. Phys. 2002, 92:2213-2215
[112] M. M. Kumar, A. G. Ye. Dielectric and electric properties of donor- and acceptor-doped ferroelectric SrBi_2Ta_2O_9. J. Appl. Phys. 2001, 90: 934-938
[113] C. A. Paz de Araujo, L. D. McMillan, B. M. Melnick, J.D. Cuchiaro, J.F. Scott. Ferroelectric Memories. Ferroelectrics 1990, 104: 241-246
[114] Cheol Seong Hwang et al. A comparative study on the electrical conduction mechanisms of (Ba_(0.5)Sr_(0.5))TiO_3 thin films on Pt and IrO_2 electrodes. J. Appl. Phys. 1998, 83: 3703-6.
[115] Z. L. Liu, C. C. Wang, M. Chen, Y. Wang, K.L. Yao. Effects of Pr_6O_(11) doping on the microstructures and properties of Bi_4Ti_3O_(12) ferroelectric ceramics. Mater. Lett., 2004,58:3648-3651
[116] M. Chen, Z. L. Liu, C. C. Wang, X. S. Yang, K.L. Yao. Ferroelectric properties of Pr_6O_(11)-doped Bi_4Ti_3O_(12) .Solid State Communications. 2004, 130: 735-739
[117] Hirofumi Matsuda, Sachiko Ito, and Takashi Iijima. Uniform field-induced strain in a/b-axes-oriented Bi_(3.9)Pr_(0.1)Ti_3O_(12) thick films on IrO_2/Si substrates for lead-free piezoelectric microdevice applications. Appl. Phys. Lett., 2004, 85: 1220-1222
[118] G. D. Hu, S. H. Fan, X. Cheng. Anisotropy of ferroelectric and piezoelectric properties of Bi_(3.15)Pr_(0.85)Ti_3O_(12) thin films on Pt(100)/Ti/SiO_2/Si substrates. J. Appl. Phys. 2007, 101:054111-054116
[119] P. R.Graves, G. Hua, S. Myhra, J. G. Tompson. The Raman Modes of the Aurivillius Phases: Temperature and Polarization Dependence J Solid State Chem. 1995, 114: 112-122
[120] Y. Wang, G. Xu, X. Zhang, Y. Feng, W. Tang, G. Cheng, Y. Zhu. Structural and optical properties of Bi_(4-x)Nd_xTi_3O_(12) thin films prepared by metal-organic solution deposition. Mater. Lett., 2004, 58: 813-816
[121] C. B. Eom, A. F. Marshall, S. S. Laderman, R. D. Jacowitz, T. H.Geballe. Epitaxial and Smooth Films of a-Axis YBa_2Cu_3O_7. Science. 1990,249: 1549-52
[122] S. E. Cummins, L. E. Cross. Electrical and Optical Properties of Ferroelectric Bi_4Ti_3O_(12) Single Crystals. J. Appl. Phys., 1968, 39: 2268-2274
[123] T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, M. Miyayama. Effect of cosubstitution of La and V in Bi_4Ti_3O_(12) thin films on the low-temperature deposition. Appl. Phys. Lett., 2001, 80: 100-102
[124] K. Kim, M. Miayama, H. Yanagida. Electrica anisotropty and a plausible explanation for dielectric anomaly of Bi_4Ti_3Ti_(12) single crystal. Mater. Res. Bull. 1996,31:121-131
[125] R. E. Melgarejo, M. S. Tomar, S. Bhaskar, P. S. Dobal, R. S. Katiyar. Large ferroelectric response in Bi_(4-x)Nd_xTi_3O_(12) films prepared by sol-gel process. Appl. Phys. Lett., 2002, 81: 2611-2613
[126] D. Wu, A. D. Li, T. Zhu, Z. F. Li, Z. G. Liu, N. B. Ming. J. Mater. Res. 2001, 16: 1325-1329
[127] Y. Noguchi, M. Miyayama. Large remanent polarization of vanadium-doped Bi_4Ti_3O_(12). Appl. Phys. Lett. 2001, 78: 1903-1905
[128] M. Hiroshi, L. Naoya, T. Daichi et al. Electromechanical properties of Nd-doped Bi_4Ti_3O_(12) films: a candidate for lead-free thin-film piezoelectrics. Appl. Phys. Lett., 2002,78: 10-12
[129] U. Hiroshi, Y. Hiroki, O. Isao et al. Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd~(3+)/V~(5+) consubstitution. Appl. Phys. Lett, 2002, 80:2229-2231
[130] X. S. Wang, H. Ishiwara. Polarization enhancement and coercive field reduction in W- and Mo-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. Appl. Phys. Lett., 2003, 82: 2479-2481
[131] S. T. Zhang, Y. F. Chen, J. Wang et al. Ferroelectric properties of La and Zr substituted Bi_4Ti_3O_(12) thin films. Appl. Phys. Lett., 2004, 84: 3660-3662
[132] S. G. Hur, D. H. Park, T. W. Kim et al. Evolution of the chemical bonding nature of ferroelectric bismuth titanate upon cation substitution. Appl. Phys. Lett, 2004, 85: 4130-4132
[133] H. Ohki, X. S. Wang, H. Ishiwara. Ferroelectric Properties of Mo-Doped Bi_(4-x)La_xTi_3O_(12) Films. Integr. Ferroelectr, 2004, 61: 37-42
[134] J. S. Kim, C. W. Ahn, H. J. Lee et al. Retention characteristics of V-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin film. Ceramic International, 2004, 30: 1565-1568
[135] U. Chon and H. Jang. Recovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi_(4-x)La_xTi_3O_(12)/Pt capacitor. Appl. Phys. Lett, 2003, 82: 1577-1579
[136] S. H. Kim, S. H. Kang, I. W. Kim et al. Ferroelectric properties of Ta- and Mn-doped B_(3.3)La_(1.0)Ti_3O_(12) thin films. Ferroelectrics, 2002,271: 167-172
[137] W. Li, Y. Yin, D. Su et al. Ferroelectric properties of polycrystalline bismuth titanate films by Nd~(3+)/W~(6+) cosubstitution. J. Appl. Phys, 2005, 97: 084102
[138] W. Li, J. Gu, C. H. Song et al. B-site doping effect on ferroelectric property of bismuth titanate ceramic. J. Appl. Phys, 2005, 98: 114104
[139] L. P. Lv, S. T. Zhang, J. Wang et al. Effects of Zr substitution on structures and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. J. Phys. D: Appl. Phys, 2005, 38:1355-1360
[140] Y. Ding, J. S. Liu, H. X. Qin. Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes. Appl. Phys. Lett. 2001,78:4175-4177.
[141] S. T. Zhang, C. S. Xiao, A. A. Fang, B. Yang, B. Sun, Y. F. Chen, Z. G Liu, and N. B. Ming. Ferroelectric properties of Sr_2Bi_4Ti_5O_(18) thin films. Appl. Phys. Lett. 2000, 76:3112-3114.
[142] J. F. Scott, C. A. Araujo, B. M. Melnick, L. D. Mcmillan, R. Zuleeg. Quantitative measurement of space-charge effects in lead zirconate-titanate memories. J. Appl. Phys. 1991, 70: 382-388.
[143] L. Baudry. Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO_3 thin film capacitor. J. Appl. Phys. 1999, 86: 1096-1105.
[144] R. D. Shannon. Crystal Physics, Diffraction, Theoretical and General Crystallography. Acta Crystallogr. Sect A: Crystal Physics, Diffraction, Theoretical and General Crystallography. 1976, 32: 751-767
[145] R. E. Melgarelo, M. S. Tomar, S. Bhaskar, P. S. Dobal, R.S Katiyar. Large ferroelectric response in Bi_(4-x)Nd_xTi_3O_(12) films prepared by sol-gel process. Appl. Phys. Lett. 2002, 81:2611-2613
[146] B. S. Kang, B. H. Park, S. D. Bu, S. H. Kang, T. W. Noh. Different fatigue behaviors of SrBi_2Ta_2O_9 and Bi_3TiTaO_9 films: Role of perovskite layers. Appl. Phys. Lett. 1999, 75:2644-2646
[147] Yuji Noguchi, Takahiro Matsumoto and Masaru Miyayama. Impact of Defect Control on the Polarization Properties in Bi_4Ti_3O_(12) Ferroelectric Single Crystals. Jpn. J. Appl. Phys., Part 2. 2005,44: L570-L572
[148] K Yamamoto, Y Kitanaka, M Suzuki, M Miyayama, Y Noguchi, C Moriyoshi, Y Kuroiwa. High-oxygen-pressure crystal growth of ferroelectric Bi_4Ti_3O_(12) single crystals. Appl. Phys. Lett. 2007, 91:162909-162911
[149] Z. H. Bao, Y. Y. Yao, Y. N. Zhu, Y. N. Wang. Study on ferroelectric and dielectric properties of niobium doped Bi_4Ti_3O_(12) ceramics and thin films prepared by PLD... Mater. Lett., 2002, 56: 861-866.
[150] L. N. Zhang, R. Q. Chu, S. C. Zhao, G. R. Li, Q. R. Yin. Microstructure and electrical properties of niobium doped Bi_4Ti_3O_(12) layer-structured piezoelectric ceramics. Materials science and Engineering B. 2005, 116: 99-103
[151] T. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E. H. Poindexter, D. J. Keeble. Vacancy formation in (Pb,La)(Zr,Ti)O_3 capacitors with oxygen deficiency and the effect on voltage offset. Appl. Phys. Lett., 2000. 77: 127-129
[152] L Baudy. Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO_3 thin film capacitor J. Appl. Phys. 1999. 86: 1096-1105
[153] Q. Y. Jiang, E. C. Subbarao, L. E. Cross. Effect of composition and temperature on electric fatigue of La-doped lead zirconate titanate ceramics. J. Appl. Phys. 1994, 75:7433-7743
[154] H. L. Liu, S Yoon, S. L. Cooper, S. W. Cheng, P. D. Han and D.A Payne. Probing anisotropic magnetotransport in manganese perovskites using Raman spectroscopy. Phys. Rev. B. 1998, 58: 10115-10118
[155] T. X. Xu, J. Y. Shen, Z. M. Bo, C. X. Fangand and Y. F. Qu 1993 Electron Ceramic Materials, (Tianjin: Tianjin University Press).
[156] Y. Shimakawa, Y. Kubo, Y. Nakagawa, S. Goto, T. Kamiyama, H. Asano and F. Izumi. Crystal structure and ferroelectric properties of ABi_2Ta_2O_9 (A=Ca, Sr, and Ba). Phys. Rev. B, 2000, 61: 6559-6564
[157] N. K. Singh, R. N. P. Choudhary, A. Panigrahi. Ferroelectric phase transition in Ba_5LaTi_(3-x)Zr_xNb_7O_(30) [x=0, 1, 2, 3] ceramics. Mater. Lett., 2002, 57: 36-42
[158] Y. M. Kan, X. H. Jin, G. J. Zhang, P. L. Wang, Y. B. Cheng and D. S. Yan. Lanthanum modified bismuth titanate prepared by a hydrolysis method. J Mater Chern, 2004,14:3566-3570
[159] S. K. Singh, H. Ishiwara. Improved fatigue endurance in Mn-doped Bi_(3.25)La_(0.75)Ti_3O_(12) thin films. Solid State Communications. 2006,140: 430-434
[160] M. W. Chu, M. Ganne, M. T Caldes, E. Gautier, and L. Brohan. X-ray photoemission spectroscopy characterization of the electrode-ferroelectric interfaces in Pt/Bi_4Ti_3O_(12)/Pt and Pt/Bi_(3.25)La_(0.75)Ti_3O_(12)/Pt capacitors: Possible influence of defect structure on fatigue properties. Phys. Rev. B., 2003, 61: 014102-014113
[161] Y. B. Park, S. M. Jang, J. K. Lee and J. W. Park. Influence of second phases on the ferroelectric properties of SrBi_2TaNbO_9 thin films fabricated by radio-frequency magnetron sputtering. J. Vac. Sci. Technol. A., 2000, 18: 17-22
[162] W. Shin and S. Yoon. Improvement in ferroelectric properties of SrBi_2Ta_2O_9 thin films with Bi_2O_3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition. Appl. Phys. Lett., 2001, 79: 1519-1521
[163] Y. Fujimori, N. Izumi, T. Nakamura, A. Kamisawa and Y. Shigematsu. Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor. Jpn. J. Appl. Phys., 1997, 36: 5935-5938
[164] K. T. Kim, C. I. Kim. The effect of orientation on structure and ferroelectric properties of Bi_(3.25)La_(0.75)Ti_3O_(12) thin films .Surface and Coatings Technology. 2004, 177: 770-773
[165] S. K. Kim, M. Miyayama and H. Yanagida. Electrical anisotropy and a plausible explanation for dielectric anomaly of Bi_4Ti_3O_(12) single crystal Mater. Res. Bull. 1996,31:121-131
[166] O. Hiroshi and I. Hiroshi. Characterization of BLT films formed by using a flash-annealing process on Pt/(Cr,Ti)N/TiN/Ti bottom electrode. Integr. Ferroelectr., 2003,52:215-222
[167] R. Bouregba, G. Poullain, B. Vilquin. Orientation control of textured PZT thin films sputtered on silicon substrate with TiO_x seeding. Mater. Res. Bull., 2000, 35: 1381-1390
[168] K. Aoki, Y. Fukuda, K. Numata. Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique. Jpn. J. Appl. Phys., 1995, 34: 192-195
[169] T. Hase, T. Sakuma, Y. Miyasaka, K. Hirata, Preparation of Pb(Zr,Ti)O_3 Thin Films by Multi-Target Sputtering. Jpn. J. Appl. Phys., 1993, 32: 4061-4064
[170] S. T. Kim, H. H. Kim, M. Y. Lee, et al. Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O_3 films, Jpn. J. Appl. Phys., 1997, 36: 294-300
[171] K. Abe, H. Tomita, H. Toyoda et al. PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering. Jpn. J. Appl. Phys., 1991, 30: 2152-2154.
[172] K. Sreenivas, I. Reaney, T. Maeder et al. Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration, J. Appl. Phys., 1994, 75: 232-239
[173] A. Z. Simoes, R. F. C. Pianno, A. Ries et al. a-b axis-oriented lanthanum doped Bi_4Ti_3O_(12) thin films grown on a TiO_2 buffer layer. J. Appl. Phys., 2006, 100: 084106-084108