InAs/GaInSb超晶格的外延生长模拟及微结构设计研究
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摘要
本文采用动力学蒙特卡罗方法(KMC)在SOS(Solid-on-Solid)模型基础上模拟了InAs／Ga_(1-x)In_xSb超晶格的分子束外延(MBE)生长，利用包络函数方法计算了InAs／Ga_(1-x)In_xSb的能带结构，在模拟和计算的基础上设计了特定截止波长的InAs／Ga_(1-x)In_xSb超晶格结构。
模拟研究发现，生长温度为663K时，在GaSb缓冲层上生长InAs层与GaInSb层时粗糙度曲线出现周期性振荡，与典型的RHEED图像相符，表明在该生长温度下生长的InAs／Ga_(1-x)In_xSb能得到较好的薄膜质量。同时发现InSb型界面比GaAs型界面更加适合InAs／Ga_(1-x)In_xSb超晶格的生长。另外，在生长Ga_(1-x)In_xSb材料时，In含量越高，薄膜表面越粗糙。
对InAs／Ga_(1-x)In_xSb超晶格的能带结构计算表明，InAs／Ga_(1-x)In_xSb的能带结构受到周期厚度和In含量的影响。InAs层和GaInSb层厚度都会影响超晶格的子带结构，InAs层变厚，HH1增加而C1下降，使得E_g减小；GaInSb层厚度变厚，C1和HH1均增加，E_g变化很小。In含量的变化由于同时改变了应变和GaInSb的能带参数，对InAs／Ga_(1-x)In_xSb能带结构产生了巨大的影响，随着In含量的增加，C1下降，HH1增加，使得E_g迅速减小。
在外延生长模拟和超晶格能带计算的基础上，选用InAs／Ga_(0．9)In_(0．1)Sb(3nm／2．7nm)结构设计p-i-n型光伏器件，其主要结构为：p+层为40个周期的InAs／GaInSb超晶格(GalnSb:Be 1×10~(17)cm~(-3))；i层为20个周期的非故意掺杂InAs／GaInSb超晶格；n+层为40个周期的InAs／GaInSb超晶格(InAs:Si 5×10~(17)cm~(-3))。计算该光伏器件在77K时的暗电流发现，其扩散电流较小，暗电流主要由复合电流和带间隧穿电流组成。当反向偏压小于16．5mV时，暗电流主要是复合电流；反向偏压超过16．5mV以后带间隧穿电流超过复合电流成为暗电流的主要组成部分。为InAs／GaInSb超晶格的器件设计奠定了基础。
The Kinetic Monte Carlo (KMC) method based on Solid-on-Solid (SOS) model has been used to simulate the growth of InAs/Ga_(1-x)In_xSb superlattice (SL) grown by Molecular Beam Epitaxy (MBE). The band structure of InAs/Ga_(1-x). In_xSb superlattice has been calculated by the Envelope Function method. On the basis of simulation and calculation, a SL photovoltaic deVice was designed.
The simulation shows that, when the substrate temperature is 663K, the Roughness-Time curve of InAs/Ga_(1-x)In_xSb growth on GaSb buffer displays a periodical oscillation, which agrees with the reported RHEED's patterns. It indicates the high quality SLs growth by MBE at this temperature. The InSb-like interface in the InAs/Ga_(1-x)In_xSb SL is smoother than the GaAs-like version. Furthermore, the quality of film degrades as the In content increasing in the Ga_(1-x) In_xSb growth.
In general, the SL period and In content contribute the band structure change of InAs/Ga_(1-x)In_xSb SL. The caulation result exhibits that, the energy of SL HH1 subband rises and C1 declines when InAs layer thickness increases, so band gap E_g decreases; on the other hand, increasing the thickness of GalnSb layer results in both C1 and HH1 rise then E_g has little changes. Because the In content affects on both strain and most band structure parameters of GalnSb, the SL band structure will vary significantly due to the changing content. Besides, the energy of C1 subband declines and HH1 rises with In content increasing, which results in the quick decrease of band gap.
A p-i-n photodiode based on InAs/Ga_(0.9)In_(0.1)Sb (3nm/2.7nm) superlattice has been designed. The active layer consists of 20 periods unintentional doped SLs sandwiched between 40 periods p-type SLs (GalnSb: Be 1×10~(17)cm~(-3)) and 40 periods n-type SLs (InAs: Si 5×10~(17)cm~(-3)). The dark current at 77K mainly make up of the generation-recombination (G-R) current and band-to-band tunneling current. The G-R current dominates the dark current when the re Verse bias lower than 16.5mV, while beyond 16.5mV the band-to-band tunneling current exceeds.
模拟研究发现，生长温度为663K时，在GaSb缓冲层上生长InAs层与GaInSb层时粗糙度曲线出现周期性振荡，与典型的RHEED图像相符，表明在该生长温度下生长的InAs／Ga_(1-x)In_xSb能得到较好的薄膜质量。同时发现InSb型界面比GaAs型界面更加适合InAs／Ga_(1-x)In_xSb超晶格的生长。另外，在生长Ga_(1-x)In_xSb材料时，In含量越高，薄膜表面越粗糙。
对InAs／Ga_(1-x)In_xSb超晶格的能带结构计算表明，InAs／Ga_(1-x)In_xSb的能带结构受到周期厚度和In含量的影响。InAs层和GaInSb层厚度都会影响超晶格的子带结构，InAs层变厚，HH1增加而C1下降，使得E_g减小；GaInSb层厚度变厚，C1和HH1均增加，E_g变化很小。In含量的变化由于同时改变了应变和GaInSb的能带参数，对InAs／Ga_(1-x)In_xSb能带结构产生了巨大的影响，随着In含量的增加，C1下降，HH1增加，使得E_g迅速减小。
在外延生长模拟和超晶格能带计算的基础上，选用InAs／Ga_(0．9)In_(0．1)Sb(3nm／2．7nm)结构设计p-i-n型光伏器件，其主要结构为：p+层为40个周期的InAs／GaInSb超晶格(GalnSb:Be 1×10~(17)cm~(-3))；i层为20个周期的非故意掺杂InAs／GaInSb超晶格；n+层为40个周期的InAs／GaInSb超晶格(InAs:Si 5×10~(17)cm~(-3))。计算该光伏器件在77K时的暗电流发现，其扩散电流较小，暗电流主要由复合电流和带间隧穿电流组成。当反向偏压小于16．5mV时，暗电流主要是复合电流；反向偏压超过16．5mV以后带间隧穿电流超过复合电流成为暗电流的主要组成部分。为InAs／GaInSb超晶格的器件设计奠定了基础。
The Kinetic Monte Carlo (KMC) method based on Solid-on-Solid (SOS) model has been used to simulate the growth of InAs/Ga_(1-x)In_xSb superlattice (SL) grown by Molecular Beam Epitaxy (MBE). The band structure of InAs/Ga_(1-x). In_xSb superlattice has been calculated by the Envelope Function method. On the basis of simulation and calculation, a SL photovoltaic deVice was designed.
The simulation shows that, when the substrate temperature is 663K, the Roughness-Time curve of InAs/Ga_(1-x)In_xSb growth on GaSb buffer displays a periodical oscillation, which agrees with the reported RHEED's patterns. It indicates the high quality SLs growth by MBE at this temperature. The InSb-like interface in the InAs/Ga_(1-x)In_xSb SL is smoother than the GaAs-like version. Furthermore, the quality of film degrades as the In content increasing in the Ga_(1-x) In_xSb growth.
In general, the SL period and In content contribute the band structure change of InAs/Ga_(1-x)In_xSb SL. The caulation result exhibits that, the energy of SL HH1 subband rises and C1 declines when InAs layer thickness increases, so band gap E_g decreases; on the other hand, increasing the thickness of GalnSb layer results in both C1 and HH1 rise then E_g has little changes. Because the In content affects on both strain and most band structure parameters of GalnSb, the SL band structure will vary significantly due to the changing content. Besides, the energy of C1 subband declines and HH1 rises with In content increasing, which results in the quick decrease of band gap.
A p-i-n photodiode based on InAs/Ga_(0.9)In_(0.1)Sb (3nm/2.7nm) superlattice has been designed. The active layer consists of 20 periods unintentional doped SLs sandwiched between 40 periods p-type SLs (GalnSb: Be 1×10~(17)cm~(-3)) and 40 periods n-type SLs (InAs: Si 5×10~(17)cm~(-3)). The dark current at 77K mainly make up of the generation-recombination (G-R) current and band-to-band tunneling current. The G-R current dominates the dark current when the re Verse bias lower than 16.5mV, while beyond 16.5mV the band-to-band tunneling current exceeds.
引文
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3．干福熹．信息材料．天津大学出版社．2000：120-122
4.J. Piotrowski, A. Rogalski. Comment on "Temperature limits on infrareddetectivities of InAs/In_xGa_(1-x)Sb superlattices and bulk Hg_(1-x)Cd_xTe" J. Appl.Phys. 74. 4774 (1993). J. Appl. Phys. 1996. 80: 2542
5.H. Mohseni, E. Michel, Jan Sandoen. Growth and Characterization ofInAs/GaSb photoconductions for long wavelength infrared range. Appl. Phys.Lett. 1997. 71: 1403-1405
6.M. H. Young, D.H. Chow, A. T. Hunter. Recent advances in Ga_(1-x)In_xSb/InAssuperlattice IR detector materials. Applied surface Science.1998.123/124:395-399
7．邱永鑫，李美成，赵连城．InAs／GaInSb应变超晶格材料的界面结构．功 能材料．2005．36(9)：1316-1319，1323
8. Rogalski. Infrared detectors: status and trends. Progress in Quantum Antoni Electronics. 2003. 27: 59-210
9．朱惜辰，程进．红外探测器的进展．光机电信息．2001．10：30-34
10. D. L. Smith, C. Mailhiot. Proposal for strained type II superlattices infrared detectors J. Appl. Phys. 1987. 62: 2545
11. R.H. Miles. Infrared optical characterization of InAs/Ga_(1-x)In_xSb superlattices. Appl. Phys. Lett. 1990. 57: 801
12. D.H.Chow. Growth and characterization of InAs/Ga_(1-x)In_xSb strained-layer superlattices. Appl. Phys. Lett. 1990. 56: 1418
13. F. Fuchs. High performance InAs/Ga_(1-x)In_xSb superlattices infrared potodiodes. Appl. Phys. Lett. 1997.77: 3251
14. A.Y. Lew, S.L. Zou, E.T. Yu. Correlation between atomic-scale structure and mobility anisotropy in InAs/Ga_(1-x)In_xSb superlattices. Phys. ReV. B 1998.57: 6534
15. Y. Wei, A. Gin, M. Razeghi. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications. Appl. Phys. Lett., 2002.80 : 3262
16. R.H. Miles, D. H. Chow, W.J. Hamilton. High structural quality Ga_(1-x) In_xSb/InAs strained-layer superlattices grown on GaSb substrates. J. Appl. Phys. 1992.71:211
17. E. Corbin, M. J. Shaw, M. R. Kitchin. Systematic study of type-Ⅱ Ga_(1-x)In_xSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range. Semicond. Sci. Technol. 2001.16:263-272
18．林春．2μm激光器、探测器材料、器件及物理．中国科学院博士学位研 究生学位论文．2001：3-6，37
19. A.Y. Lew, S.L. Zou, E.T. Yu. Correlation between atomic-scale structure and mobility anisotropy in InAs/Ga_(1-x)In_xSb superlattices. Phys. ReV. B 1998.57: 6534
20. J. Wagner, P. M. Young, M. E. Flatte. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes. J. Appl. Phys. 1995.78
21. J. Schmitz. Electrical and optical of infrared potodiodes using the InAs/Ga_(1-x)In_xSb superlattice in heterojunction with GaSb. J. Appl. Phys. 1996. 80: 1116
22．杨邦朝，王文生．薄膜物理与技术．电子科技大学出版社．1994：148-161
23．杨春，李言荣 薄膜生长模型与计算机模拟．2003．34(3)：247-249
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