掺硅类金刚石薄膜的制备、结构及光学性质
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摘要
本文采用直流磁控溅射方法,以普通光学玻璃和单晶硅为基底,Ar为工作气体和石墨以及硅片为靶材,制备无氢类金刚石薄膜和掺硅类金刚石薄膜。采用紫外-可见光光谱仪和荧光光谱仪对薄膜的光学性质进行了分析;薄膜的成分、结构和表面形貌分别通过X射线光电子能谱(XPS),X射线衍射(XRD),拉曼光谱仪,原子力显微镜(AFM)分析。并测量了薄膜的透过率,光学带隙和表面的粗糙度等性能,研究了不同基底及不同工艺条件对薄膜结构和性能的影响,找出最佳的沉积条件,重点分析了不同硅含量对薄膜的结构性能的影响。
研究结果表明,采用直流磁控溅射方法,以石墨和硅片为靶材,Ar为工作气体可成功制备无氢类金刚石薄膜和掺硅类金刚石薄膜。随着硅含量的增加,薄膜的光学透过率提高,膜的光学带隙也先变宽后有所下降;光致发光光谱分析表明发光中心随着硅的增加发光中光蓝移并且强度增强。XRD和AFM测量结果表明薄膜为硅、碳原子层状交织的非晶态共价网络结构。XPS光谱分析表明随着硅片占靶的面积增大,薄膜中含硅量从6.35at.%增加到24.55at.%,从薄膜中的价键所占的比例推断出膜中sp~3/sp~2随着硅量的增多而增加。薄膜的拉曼光谱中D峰和G峰都移向高频方向。
最后,文章详细探讨了制备参数对无氢类金刚石薄膜的表面形貌,沉积速率,紫外-可见光透射光谱及光学带隙的影响和机理分析。
Hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas, graphite and silicon chips on the single-crystal silicon and optical glass substrates. Influence of different silicon concentration on optical properties, surface morphology, microstructure and electronic structure of DLC films were investigated by UV/VIS transmittance spectrometer, atomic force microscope(AFM), atomic fluorescence spectrometer(AFS), X-ray photoelectron spectroscopic (XPS), X-ray diffraction, raman microscope respectively, and inspected the transmittance, the optical band gap, the roughness of surface. We studied that how the different substrates and various conditions influenced the properties of films in order to deposit the best films on the better conditions. We found more details on influence of different silicon concentration on films.
The results show that hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas graphite and silicon chips. The transmittance ratio in visible and infrared distracts increases quickly when the silicon contained DLC films. The optical band gap of films firstly increased then decreased with silicon content increasing. The photoluminescence measurement reveals that the light emission centre "blue" shift and the intensity enhanced. XRD and AFM show that the films are amorphous with the atom of carbon and silicon interacting. XPS analyses reveal that the silicon concentration increased from 6.35at.% to 24.55at.% with the silicon area enhancing. We concluded that addition of silicon into the films leads to an increase in the sp~3/sp~2 ratio from different bond. The D and G modes of their Raman spectroscopy of the silicon incorporated diamond-like carbon move to higher energy.
At last we discussed details that deposition parameters influenced on the deposition rate, the surface morphology, the transmittance ratio in visible and infrared distracts and the optical band gap, meanwhile the theories of the DLC growth were investigated.
研究结果表明,采用直流磁控溅射方法,以石墨和硅片为靶材,Ar为工作气体可成功制备无氢类金刚石薄膜和掺硅类金刚石薄膜。随着硅含量的增加,薄膜的光学透过率提高,膜的光学带隙也先变宽后有所下降;光致发光光谱分析表明发光中心随着硅的增加发光中光蓝移并且强度增强。XRD和AFM测量结果表明薄膜为硅、碳原子层状交织的非晶态共价网络结构。XPS光谱分析表明随着硅片占靶的面积增大,薄膜中含硅量从6.35at.%增加到24.55at.%,从薄膜中的价键所占的比例推断出膜中sp~3/sp~2随着硅量的增多而增加。薄膜的拉曼光谱中D峰和G峰都移向高频方向。
最后,文章详细探讨了制备参数对无氢类金刚石薄膜的表面形貌,沉积速率,紫外-可见光透射光谱及光学带隙的影响和机理分析。
Hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas, graphite and silicon chips on the single-crystal silicon and optical glass substrates. Influence of different silicon concentration on optical properties, surface morphology, microstructure and electronic structure of DLC films were investigated by UV/VIS transmittance spectrometer, atomic force microscope(AFM), atomic fluorescence spectrometer(AFS), X-ray photoelectron spectroscopic (XPS), X-ray diffraction, raman microscope respectively, and inspected the transmittance, the optical band gap, the roughness of surface. We studied that how the different substrates and various conditions influenced the properties of films in order to deposit the best films on the better conditions. We found more details on influence of different silicon concentration on films.
The results show that hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas graphite and silicon chips. The transmittance ratio in visible and infrared distracts increases quickly when the silicon contained DLC films. The optical band gap of films firstly increased then decreased with silicon content increasing. The photoluminescence measurement reveals that the light emission centre "blue" shift and the intensity enhanced. XRD and AFM show that the films are amorphous with the atom of carbon and silicon interacting. XPS analyses reveal that the silicon concentration increased from 6.35at.% to 24.55at.% with the silicon area enhancing. We concluded that addition of silicon into the films leads to an increase in the sp~3/sp~2 ratio from different bond. The D and G modes of their Raman spectroscopy of the silicon incorporated diamond-like carbon move to higher energy.
At last we discussed details that deposition parameters influenced on the deposition rate, the surface morphology, the transmittance ratio in visible and infrared distracts and the optical band gap, meanwhile the theories of the DLC growth were investigated.
引文
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