高功率LED封装的可靠性研究
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摘要
出于节约能源的需求以及半导体照明的优点,以高功率LED为代表的半导体照明器件在近年来得到了飞速的发展,并且已经发展成为下一代通用照明应用的有力候选者。高功率LED器件上过高的温度,对LED的稳定性、发光效率和寿命等会造成非常大的影响。因此,LED可靠性的研究将对LED照明的普及和绿色照明的真正实现起到至关重要的作用。
本文从封装材料对高功率LED器件结构的热应力分布影响出发,对高功率LED封装的某些可靠性问题进行了分析和讨论。并且通过实验和有限元分析,模拟了不同的荧光粉封装工艺的温度分布情况。这种预估计方法,对高功率LED器件封装材料的选择和封装工艺的调整都有十分有效的指导作用,缩短了设计和制造周期,提高了经济效率。
文中首先对某公司的高功率LED的封装工艺过程进行了叙述,并且对该高功率LED产品在使用过程中出现的某些失效形式进行了讨论。然后利用有限元分析手段,研究了高功率LED器件正常点亮和高温回流条件下,金锡合金焊层上的热应力分布变化。结果表明热膨胀系数不同的封装材料对高功率LED器件结构上的应力分布有着不同的影响。更加深入的了解发现,不同环境条件的加速老化实验后,共晶焊层Au80Sn作为固晶材料依然有着优良的可靠性。
在本文的最后,对荧光粉涂敷工艺方法进行了研究,并且成功地控制了荧光层体积和外形。利用理想化的有限元数值分析技术对荧光粉颗粒上的温度进行评估,为最终的荧光粉工艺的选择提供了方向性指导。
Based on the demand of the energy saving in the world-around and the excellent characteristics of the semiconductor illumination, high power light emitting diodes(HP-LED), which improves quickly in recent years as the representative of semiconductor illumination is a strong candidate for the next generation general illumination. The quality of LED including stability、illuminant efficiency and lifetime will be seriously affected while the high power LED run up to a ultra-high temperature. The research of LED reliability plays an important role in its prevalence and the complete realization of green illumination.
Because of problems caused by the thermal stress on the structure of the high power LED, which due to the CTE of the packaging materials, many kinds of reliability issues of the high power LED packaging are discussed and analyzed. The temperature distribution of the phosphor particles of different phosphor coating methods are simulated by the FEA. The method is a pre-estimating one, which can help to make an effective instruction for the choice of packaging materials and methods. It not only reduces the period of design and manufacture but also enhances the economic benefits.
There is a description on the technical processes and failure mode of one high power LED. Furthermore, FEA is used to research the variety of thermal stress on the gold-tin eutectic solder layer between the normal power dissipation and the high temperature reflow process. It shows that different packaging materials have different effects on the eutectic solder layer of the high power LED. More practical experiments prove that Au80Sn solder layer as the die bonding material have the excellent reliability after acceleration aging.
Finally, experiments are exerted on the technique of phosphor coating and the phosphor layer is molded successfully. Idealized numerical models are created to evaluate the temperature of phosphor particles and layers. Synthetic regarding, the layer of phosphor coating may be the most excellent phosphor technique at current technical level.
本文从封装材料对高功率LED器件结构的热应力分布影响出发,对高功率LED封装的某些可靠性问题进行了分析和讨论。并且通过实验和有限元分析,模拟了不同的荧光粉封装工艺的温度分布情况。这种预估计方法,对高功率LED器件封装材料的选择和封装工艺的调整都有十分有效的指导作用,缩短了设计和制造周期,提高了经济效率。
文中首先对某公司的高功率LED的封装工艺过程进行了叙述,并且对该高功率LED产品在使用过程中出现的某些失效形式进行了讨论。然后利用有限元分析手段,研究了高功率LED器件正常点亮和高温回流条件下,金锡合金焊层上的热应力分布变化。结果表明热膨胀系数不同的封装材料对高功率LED器件结构上的应力分布有着不同的影响。更加深入的了解发现,不同环境条件的加速老化实验后,共晶焊层Au80Sn作为固晶材料依然有着优良的可靠性。
在本文的最后,对荧光粉涂敷工艺方法进行了研究,并且成功地控制了荧光层体积和外形。利用理想化的有限元数值分析技术对荧光粉颗粒上的温度进行评估,为最终的荧光粉工艺的选择提供了方向性指导。
Based on the demand of the energy saving in the world-around and the excellent characteristics of the semiconductor illumination, high power light emitting diodes(HP-LED), which improves quickly in recent years as the representative of semiconductor illumination is a strong candidate for the next generation general illumination. The quality of LED including stability、illuminant efficiency and lifetime will be seriously affected while the high power LED run up to a ultra-high temperature. The research of LED reliability plays an important role in its prevalence and the complete realization of green illumination.
Because of problems caused by the thermal stress on the structure of the high power LED, which due to the CTE of the packaging materials, many kinds of reliability issues of the high power LED packaging are discussed and analyzed. The temperature distribution of the phosphor particles of different phosphor coating methods are simulated by the FEA. The method is a pre-estimating one, which can help to make an effective instruction for the choice of packaging materials and methods. It not only reduces the period of design and manufacture but also enhances the economic benefits.
There is a description on the technical processes and failure mode of one high power LED. Furthermore, FEA is used to research the variety of thermal stress on the gold-tin eutectic solder layer between the normal power dissipation and the high temperature reflow process. It shows that different packaging materials have different effects on the eutectic solder layer of the high power LED. More practical experiments prove that Au80Sn solder layer as the die bonding material have the excellent reliability after acceleration aging.
Finally, experiments are exerted on the technique of phosphor coating and the phosphor layer is molded successfully. Idealized numerical models are created to evaluate the temperature of phosphor particles and layers. Synthetic regarding, the layer of phosphor coating may be the most excellent phosphor technique at current technical level.
引文
[1]张万生,梁春广.可见光LED的进展:发展趋势及蓝色LED(一).半导体情报, 1997, 34(3): 1-9.
[2] Hewlett-Packard Co. Benefits of Lumileds Solid State Lighting Solutions vs. Conventional Lighting . Application Note, 1998, 1149(6).
[3] Mach R, Mueller G. White light emitting diodes for illumination. SPIE, 2000, 39(3):30-41.
[4] Barbara G. Ashdown, David J. Bjormstad, Gabrielle Boudreau. Assessing Consumer Values and Supply-Chain Relationships for Solid-State Lighting Technologies. ORNL/TM-2004/80.
[5]李卓,朱崇恩,刘小鸿.固态发光器件前景光明.中国照明电器,2003, 7:11- 13.
[6]中国绿色照明项目促进办公室.中国绿色照明工程实施展望.中国能源, 2004, 26(7):36-39.
[7]白杉,子萌.半导体灯掀起照明的绿色革命.照明与光源,NO.1,p42-43(2004).
[8]易安.半导体照明-21世纪的节能新光源.中国创业投资与新科技(2004.8)
[9]吴玲.中国半导体照明产业发展报告.北京:机械工业出版社, 2005, 38～39.
[10] Jeff Y. Tsao.“Light Emitting Diodes(LEDs) for General Illumination”. Optoelectronics Industry Development Association. 2002, Washington DC, http://www.oida.org.
[11] Mehmet Arik, James petroskl, Stanton Weaver. Thermal challenge in the future generation solid state light applications: light emitting diodes. 2002 Intel Society Conference on Thermal Phenomena.
[12] Shatil Haque, Dan Steigerwald, Serge Rudaz et al. Packaging Challenging of High Power LEDs for Solid State Lighting. 2003, available at www.imaps.org.
[13] Mehmet Arik, Stanton Weaver. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes. Optical Engineering, 2005,44(11).
[14]李卫红. LED与荧光粉知识. http://phosphor.home.sunbo.net/show_hdr.php. xname=RJT4F21&dname=NATAF21&xpos=18
[15]钱可元,胡飞,吴慧颖,罗毅.大功率白光LED封装技术的研究.半导体光电, Vol.26 NO.2, Apr, 2005.
[16] LUXEON Reliability. www.luxeon.com
[17]李炳乾,布良基,甘雄文等. LED正向压降随温度的变化关系研究,光子学报, 2003, 32(11):1349～1351.
[18]大功率固态照明热处理进展(一). http://info.lamp.hc360.com/Html/001/002/ 7355-2 .htm
[19] C. Tsou, Y. S. Huang, G. W. Lin. Silicon-based Packaging Platform for Light Emitting Diode. 2005 IEEE, 2005 6th International Conference on Electronic Packaging Technology.
[20] Rafael C. Jordan, Jorg Bauer, Hermann Oppermann. Optimized heat transfer and homogeneous color converting for Ultra High Brightness LED Package. Proc.of SPIE Vol.61980B-1.
[21] Frank Wall, Paul S. Martin, Gerard Harbers. HIGH POWER LED PACKAGE REQUIREMENTS. Proc. SPIE,Vol.5187,2002.
[22] Jen-Hau Cheng, Chun-Kai Liu, Yu-Lin Chao, Ra-Min Tain. Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED. 2005 InternationalConference on Thermoelectrics
[23]雷勇,范广涵,廖常俊等.功率型白光LED的热特性研究.光电子·激光, Vol. 17 NO.8, AUG, 2006.
[24] Mehmet Arik, Charles Becker, Stanton Weaver, and James Petroski,“Thermal Management of LEDs: Package to System”, Proc. SPIE, 2004,5187,64~75.
[25] M. Arik, S. Weaver, C. Becker, M. Hsing, and A. Srivastava.“Effects of Localized Heat Generations Due to the Color Conversion in Phosphor Particles and Layers of High Brightness Light Emitting Diodes”. ASME/IEEE InterPack2003-35015, July 6-11,2003.
[26] Mehmet Arik, Stanton Weaver. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes. Optical Engineering 44(11), 111305(1~8) , November 2005
[27]王富耻,张朝晖. ANSYS10.0有限元分析理论与工程应用.北京:电子工艺出版社, 2006:1~16, 171~199.
[28] Gu YM, Narendran N. 2004. A non-contact method for determining junction temperature of phosphor-converted white LEDs. Proceedings of SPIE 5187 , Third International Conference on Solid State Lighting. San Diego , CA , 2003. 107.
[29]国家新材料行业生产力促进中心.中国半导体照明产业发展报告.北京:机械工业出版社, 2005.
[30]甘彬,冯红年,金尚忠.大功率白色发光二极管的特性研究.光学仪器, 2005, 27(5):33-37.
[31] C. Basaran, H. Ye, D. C. Hopkins et al. Failure Modes of Flip Chip Solder Joints Under High Electric Current Density. Journal of Electronic Packaging, 2005, 127: 157-163.
[32] Shatil Haque, Dan Steigerwald, Serge Rudaz et al. Packaging Challenging of High Power LEDs for Solid State Lighting. 2003, available at www.imaps.org.
[33]吴海彬,叶光,王昌龄.多芯片集成大功率白光LED照明光源.液晶与显示, Vol.20, NO.3, July, 2005.
[34] Oliver Kückmann. High power LED arrays Special requirements on packaging technology. Proc. of SPIE Vol. 6134,2006,613404-1～613404-8.
[35]李炳乾,布良基,范广涵.芯片键合材料对功率型LED热阻的影响.半导体光电, 2003, 24(6):422~424.
[36]周孑民,王锡范,黄学章等.高密度电子封装器件的温度分布研究.株洲工学院学报, 2002, 16(6): 61~65.
[37] J. T. Hsu, W. K. Han, C. Chen et al. Design of multi-chips LED for lighting application. Proc. SPIE, 2002, 4776: 26-33.
[38] N. Narendan, Y. Gu, J. P. Freyssinier et al. Solid-state lighting: Failure analysis of white LEDs. Journal of Crystal Growth, 2004, 268(3-4): 449-456.
[39]李炳乾. 1W级大功率白光LED发光效率研究.光电器件, 2005, 26(4):314～318.
[40]金尚忠,张在宣,侯民贤,郭志军.白光照明LED等温度特性的研究.发光学报, 2002, 23(4).399～403.
[41] Atsushi Okuno, Yoshiteru Miyawaki, Noritaka Oyama, and Wang Dongxu. Unique White LED Packaging Systems. IEEE, 2003 Electronic Components and Technology Conference.
[42]张朝晖. ANSYS8.0热分析教程与实例解析.北京:中国铁道出版社., 2005:1～201.
[43] Yimin Gu, Nadarajah Narendran, Jean Paul Freyssinier, White LED performance.Proc SPIE, 2004, 5530: 119.
[44] Hewlett-Packard Co. Secondary Optics Design Considerations for Super Flux LEDs. Application Note, 1998, 1149(5).
[45] L. K. Cheah, Y. M. Tan, J. Wei, and C. K. Wong. Gold to Gold Thermosonic Flip-Chip Bonding. IEEE, 2004 Electronic Components and Technology Conference.
[46] Wire Bonding Shear test methods. EIA/JESD22-B116, JULY, 1998
[47] Isamu Niki, Yukio Narukawa, Daisuke Morita et al. White LEDs for solid state lighting, Proc. SPIE, 2004, 5187: 1.
[48] Adrian Wilson, Malcolm Cox, and Lisa Gerbracht. Bond Test Fundamentals for Successful Advanced Applications. Advanced Packaging, Aug, 2004.
[49] Hong E, Narendran N. A method for projecting useful life of LED lighting systems. Third International Conference on Solid State Lighting, Proc. Of SPIE. 2004, 5187: 93-99.
[50] F. K. Yam, Z. Hassan. Innovative advances in LED technology. Microelectronics Journal, 36 (2005) 129-137.
[2] Hewlett-Packard Co. Benefits of Lumileds Solid State Lighting Solutions vs. Conventional Lighting . Application Note, 1998, 1149(6).
[3] Mach R, Mueller G. White light emitting diodes for illumination. SPIE, 2000, 39(3):30-41.
[4] Barbara G. Ashdown, David J. Bjormstad, Gabrielle Boudreau. Assessing Consumer Values and Supply-Chain Relationships for Solid-State Lighting Technologies. ORNL/TM-2004/80.
[5]李卓,朱崇恩,刘小鸿.固态发光器件前景光明.中国照明电器,2003, 7:11- 13.
[6]中国绿色照明项目促进办公室.中国绿色照明工程实施展望.中国能源, 2004, 26(7):36-39.
[7]白杉,子萌.半导体灯掀起照明的绿色革命.照明与光源,NO.1,p42-43(2004).
[8]易安.半导体照明-21世纪的节能新光源.中国创业投资与新科技(2004.8)
[9]吴玲.中国半导体照明产业发展报告.北京:机械工业出版社, 2005, 38～39.
[10] Jeff Y. Tsao.“Light Emitting Diodes(LEDs) for General Illumination”. Optoelectronics Industry Development Association. 2002, Washington DC, http://www.oida.org.
[11] Mehmet Arik, James petroskl, Stanton Weaver. Thermal challenge in the future generation solid state light applications: light emitting diodes. 2002 Intel Society Conference on Thermal Phenomena.
[12] Shatil Haque, Dan Steigerwald, Serge Rudaz et al. Packaging Challenging of High Power LEDs for Solid State Lighting. 2003, available at www.imaps.org.
[13] Mehmet Arik, Stanton Weaver. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes. Optical Engineering, 2005,44(11).
[14]李卫红. LED与荧光粉知识. http://phosphor.home.sunbo.net/show_hdr.php. xname=RJT4F21&dname=NATAF21&xpos=18
[15]钱可元,胡飞,吴慧颖,罗毅.大功率白光LED封装技术的研究.半导体光电, Vol.26 NO.2, Apr, 2005.
[16] LUXEON Reliability. www.luxeon.com
[17]李炳乾,布良基,甘雄文等. LED正向压降随温度的变化关系研究,光子学报, 2003, 32(11):1349～1351.
[18]大功率固态照明热处理进展(一). http://info.lamp.hc360.com/Html/001/002/ 7355-2 .htm
[19] C. Tsou, Y. S. Huang, G. W. Lin. Silicon-based Packaging Platform for Light Emitting Diode. 2005 IEEE, 2005 6th International Conference on Electronic Packaging Technology.
[20] Rafael C. Jordan, Jorg Bauer, Hermann Oppermann. Optimized heat transfer and homogeneous color converting for Ultra High Brightness LED Package. Proc.of SPIE Vol.61980B-1.
[21] Frank Wall, Paul S. Martin, Gerard Harbers. HIGH POWER LED PACKAGE REQUIREMENTS. Proc. SPIE,Vol.5187,2002.
[22] Jen-Hau Cheng, Chun-Kai Liu, Yu-Lin Chao, Ra-Min Tain. Cooling Performance of Silicon-Based Thermoelectric Device on High Power LED. 2005 InternationalConference on Thermoelectrics
[23]雷勇,范广涵,廖常俊等.功率型白光LED的热特性研究.光电子·激光, Vol. 17 NO.8, AUG, 2006.
[24] Mehmet Arik, Charles Becker, Stanton Weaver, and James Petroski,“Thermal Management of LEDs: Package to System”, Proc. SPIE, 2004,5187,64~75.
[25] M. Arik, S. Weaver, C. Becker, M. Hsing, and A. Srivastava.“Effects of Localized Heat Generations Due to the Color Conversion in Phosphor Particles and Layers of High Brightness Light Emitting Diodes”. ASME/IEEE InterPack2003-35015, July 6-11,2003.
[26] Mehmet Arik, Stanton Weaver. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes. Optical Engineering 44(11), 111305(1~8) , November 2005
[27]王富耻,张朝晖. ANSYS10.0有限元分析理论与工程应用.北京:电子工艺出版社, 2006:1~16, 171~199.
[28] Gu YM, Narendran N. 2004. A non-contact method for determining junction temperature of phosphor-converted white LEDs. Proceedings of SPIE 5187 , Third International Conference on Solid State Lighting. San Diego , CA , 2003. 107.
[29]国家新材料行业生产力促进中心.中国半导体照明产业发展报告.北京:机械工业出版社, 2005.
[30]甘彬,冯红年,金尚忠.大功率白色发光二极管的特性研究.光学仪器, 2005, 27(5):33-37.
[31] C. Basaran, H. Ye, D. C. Hopkins et al. Failure Modes of Flip Chip Solder Joints Under High Electric Current Density. Journal of Electronic Packaging, 2005, 127: 157-163.
[32] Shatil Haque, Dan Steigerwald, Serge Rudaz et al. Packaging Challenging of High Power LEDs for Solid State Lighting. 2003, available at www.imaps.org.
[33]吴海彬,叶光,王昌龄.多芯片集成大功率白光LED照明光源.液晶与显示, Vol.20, NO.3, July, 2005.
[34] Oliver Kückmann. High power LED arrays Special requirements on packaging technology. Proc. of SPIE Vol. 6134,2006,613404-1～613404-8.
[35]李炳乾,布良基,范广涵.芯片键合材料对功率型LED热阻的影响.半导体光电, 2003, 24(6):422~424.
[36]周孑民,王锡范,黄学章等.高密度电子封装器件的温度分布研究.株洲工学院学报, 2002, 16(6): 61~65.
[37] J. T. Hsu, W. K. Han, C. Chen et al. Design of multi-chips LED for lighting application. Proc. SPIE, 2002, 4776: 26-33.
[38] N. Narendan, Y. Gu, J. P. Freyssinier et al. Solid-state lighting: Failure analysis of white LEDs. Journal of Crystal Growth, 2004, 268(3-4): 449-456.
[39]李炳乾. 1W级大功率白光LED发光效率研究.光电器件, 2005, 26(4):314～318.
[40]金尚忠,张在宣,侯民贤,郭志军.白光照明LED等温度特性的研究.发光学报, 2002, 23(4).399～403.
[41] Atsushi Okuno, Yoshiteru Miyawaki, Noritaka Oyama, and Wang Dongxu. Unique White LED Packaging Systems. IEEE, 2003 Electronic Components and Technology Conference.
[42]张朝晖. ANSYS8.0热分析教程与实例解析.北京:中国铁道出版社., 2005:1～201.
[43] Yimin Gu, Nadarajah Narendran, Jean Paul Freyssinier, White LED performance.Proc SPIE, 2004, 5530: 119.
[44] Hewlett-Packard Co. Secondary Optics Design Considerations for Super Flux LEDs. Application Note, 1998, 1149(5).
[45] L. K. Cheah, Y. M. Tan, J. Wei, and C. K. Wong. Gold to Gold Thermosonic Flip-Chip Bonding. IEEE, 2004 Electronic Components and Technology Conference.
[46] Wire Bonding Shear test methods. EIA/JESD22-B116, JULY, 1998
[47] Isamu Niki, Yukio Narukawa, Daisuke Morita et al. White LEDs for solid state lighting, Proc. SPIE, 2004, 5187: 1.
[48] Adrian Wilson, Malcolm Cox, and Lisa Gerbracht. Bond Test Fundamentals for Successful Advanced Applications. Advanced Packaging, Aug, 2004.
[49] Hong E, Narendran N. A method for projecting useful life of LED lighting systems. Third International Conference on Solid State Lighting, Proc. Of SPIE. 2004, 5187: 93-99.
[50] F. K. Yam, Z. Hassan. Innovative advances in LED technology. Microelectronics Journal, 36 (2005) 129-137.
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