纳米ZnO及ZnO/稀土粒子的制备和性能的研究
摘要
ZnO是一种重要的半导体材料,室温下的带隙宽为3.37 eV,激子束缚能高达60 meV。由于其良好的光电性能,可以广泛应用在室温紫外激光器,传感器和光催化等领域。ZnO中存在氧空位、锌间隙等诸多本征点缺陷,对ZnO进行掺杂是改进其性能的方法之一。
本文采用水热法制备了La掺杂ZnO粉体,讨论了pH、掺杂量、反应时间对ZnO复合粒子的粒径和形貌的影响,并通过XRD、SEM、EDS、UV-Vis对产物进行表征。结果表明,掺杂La时,出现抑制ZnO生长的现象,得到粒径为20-40 nm的ZnO/La_2O_3复合粉体;由于La~(3+)离子的半径比Zn~(2+)离子的半径大,当La掺杂进入ZnO晶格中,造成局部晶格的畸变,导致晶胞参数的改变;La掺杂量为3%时提高了ZnO的光催化活性。
采用高分子网络法制备了La、Y、Nd对ZnO掺杂的复合粉体,讨论了掺杂量、烧结温度对粒径和形貌的影响,并通过XRD、SEM、TEM、EDS和FT-IR对产物进行表征。结果表明,La、Y、Nd的掺杂对ZnO的生长产生了抑制的作用,复合粒子的粒径随掺杂量的增加而减小,随烧结温度的升高而增大。
采用微波法和微波水热法制备纳米ZnO粉体,讨论了pH对微波水热法和传统水热法制备粒子尺寸和形貌的影响,并通过XRD和SEM对产物进行表征。结果表明,微波在合成中具有节能高效的特点,可直接合成形貌均一,粒径为37.8 nm的纳米粒子。
采用聚苯胺对ZnO、ZnO/La_2O_3、ZnO/Y_2O_3、ZnO/Nd_2O_3表面修饰制备得到导电复合材料,并通过XRD、SEM进行表征。通过四探针电导率仪测试,ZnO-PANI为2.326 s·m~(-1),比掺杂稀土时高一个数量级。
ZnO is one of the most attractive functional semiconductor materials. It has a wide band gap(3.37 eV) and a high exciton binding energy (60 meV) at room temperature. Due to its good optoelectronic properties, it can be widely applied in the fields of room-temperature ultraviolet lasing, sensor and photocatalysis etc. ZnO has many intrinsic point defects such as oxygen vacancy and zinc interstitial atom. Doping to ZnO is one of the methods to improve its performance.
La-doped ZnO was synthesized by hydrothermal method. The effect of pH, doping content and reaction time on the size and morphology of the particles was evaluated. The products were characterized by XRD, SEM, EDS and UV-Vis. The results indicated that the growth of ZnO crystals was inhibited during the doping process. The ZnO/La_2O_3 composite powders with size of 20～40 nm were obtained; As the radius of La~(3+) is bigger than that of Zn~(2+), the doping with La into ZnO crystal lattice caused the distortion of lattice and the change of lattice parameters; The photocatalysis properties of ZnO were improved when the doping content was 3%.
ZnO composite powers doped with La, Y and Nd were prepared by polymer network method. The influence of doping content and sintering temperature on the particles size and morphology was discussed. The samples were characterized by XRD, SEM, TEM, EDS and FT-IR. The results showed that the doping with La, Y and Nd can suppress the growth of ZnO, the particle size of the composite particles decreased with the increase of doping content, whereas the size increased with the increase of sintering temperature.
ZnO nanometer powders were prepared by microwave method and microwave-hydrothermal method, the influence of pH on the size and morphology of the particles prepared by microwave-hydrothermal method and traditional hydrothermal method was studied. The characterization of the products by XRD and SEM showed that the microwave method had the advantage of energy saving and high efficiency during the reaction, and might directly synthesize homogenous morphology nanoparticle with the size of 37.8 nm.
conducting composite materials were fabricated by using polyaniline to modify the surface of ZnO, ZnO/La_2O_3, ZnO/Y_2O_3 and ZnO/Nd_2O_3. The samples were characterized by XRD and SEM. The conductivity of ZnO-PANI was measured by four probe electrical conductivity instrument and equal to 2.326 s·m~(-1), which was one order higher than that of RE-doped ZnO.
本文采用水热法制备了La掺杂ZnO粉体,讨论了pH、掺杂量、反应时间对ZnO复合粒子的粒径和形貌的影响,并通过XRD、SEM、EDS、UV-Vis对产物进行表征。结果表明,掺杂La时,出现抑制ZnO生长的现象,得到粒径为20-40 nm的ZnO/La_2O_3复合粉体;由于La~(3+)离子的半径比Zn~(2+)离子的半径大,当La掺杂进入ZnO晶格中,造成局部晶格的畸变,导致晶胞参数的改变;La掺杂量为3%时提高了ZnO的光催化活性。
采用高分子网络法制备了La、Y、Nd对ZnO掺杂的复合粉体,讨论了掺杂量、烧结温度对粒径和形貌的影响,并通过XRD、SEM、TEM、EDS和FT-IR对产物进行表征。结果表明,La、Y、Nd的掺杂对ZnO的生长产生了抑制的作用,复合粒子的粒径随掺杂量的增加而减小,随烧结温度的升高而增大。
采用微波法和微波水热法制备纳米ZnO粉体,讨论了pH对微波水热法和传统水热法制备粒子尺寸和形貌的影响,并通过XRD和SEM对产物进行表征。结果表明,微波在合成中具有节能高效的特点,可直接合成形貌均一,粒径为37.8 nm的纳米粒子。
采用聚苯胺对ZnO、ZnO/La_2O_3、ZnO/Y_2O_3、ZnO/Nd_2O_3表面修饰制备得到导电复合材料,并通过XRD、SEM进行表征。通过四探针电导率仪测试,ZnO-PANI为2.326 s·m~(-1),比掺杂稀土时高一个数量级。
ZnO is one of the most attractive functional semiconductor materials. It has a wide band gap(3.37 eV) and a high exciton binding energy (60 meV) at room temperature. Due to its good optoelectronic properties, it can be widely applied in the fields of room-temperature ultraviolet lasing, sensor and photocatalysis etc. ZnO has many intrinsic point defects such as oxygen vacancy and zinc interstitial atom. Doping to ZnO is one of the methods to improve its performance.
La-doped ZnO was synthesized by hydrothermal method. The effect of pH, doping content and reaction time on the size and morphology of the particles was evaluated. The products were characterized by XRD, SEM, EDS and UV-Vis. The results indicated that the growth of ZnO crystals was inhibited during the doping process. The ZnO/La_2O_3 composite powders with size of 20～40 nm were obtained; As the radius of La~(3+) is bigger than that of Zn~(2+), the doping with La into ZnO crystal lattice caused the distortion of lattice and the change of lattice parameters; The photocatalysis properties of ZnO were improved when the doping content was 3%.
ZnO composite powers doped with La, Y and Nd were prepared by polymer network method. The influence of doping content and sintering temperature on the particles size and morphology was discussed. The samples were characterized by XRD, SEM, TEM, EDS and FT-IR. The results showed that the doping with La, Y and Nd can suppress the growth of ZnO, the particle size of the composite particles decreased with the increase of doping content, whereas the size increased with the increase of sintering temperature.
ZnO nanometer powders were prepared by microwave method and microwave-hydrothermal method, the influence of pH on the size and morphology of the particles prepared by microwave-hydrothermal method and traditional hydrothermal method was studied. The characterization of the products by XRD and SEM showed that the microwave method had the advantage of energy saving and high efficiency during the reaction, and might directly synthesize homogenous morphology nanoparticle with the size of 37.8 nm.
conducting composite materials were fabricated by using polyaniline to modify the surface of ZnO, ZnO/La_2O_3, ZnO/Y_2O_3 and ZnO/Nd_2O_3. The samples were characterized by XRD and SEM. The conductivity of ZnO-PANI was measured by four probe electrical conductivity instrument and equal to 2.326 s·m~(-1), which was one order higher than that of RE-doped ZnO.
引文
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