磁控溅射SiC薄膜制备及其场发射相关性能研究
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摘要
能源、材料、信息科学是新技术革命的先导和支柱。作为特殊形态材料的固体功能薄膜材料,在纳米电子学、微电子学、光电子学、磁电子学、高灵敏度传感器以及低价、高效、大面积太阳能电池等高新技术领域有着极为广泛的应用。SiC薄膜集力学、电学、热学和光学等优异特性于一身,在高温、高频、大功率、抗辐射等领域极具应用潜力,成为能够在极端条件下应用并具有极端特性的新一代宽带隙半导体薄膜材料与器件的优选。
本文首先对宽禁带SiC半导体材料独特的结构特性、理化及电子学性质进行了简要介绍,对目前国内外有关SiC单晶体及薄膜生长、SiC场发射性能及相关器件的研究现状、取得的成绩及存在的问题进行了概述,确定了课题的主要研究方向、内容和目标。
其次,在充分了解掌握薄膜制备方法手段的基础上,采用磁控溅射法,通过探索磁控溅射SiC薄膜的较好生长工艺条件,使结构致密、纯度较高、附着性良好的SiC薄膜,按照非自发形核、原子团的迁移、连续薄膜生长的机理,在异质Si衬底上实现了层状外延式生长。
然后,在充分了解掌握薄膜材料物性分析表征方法的基础上,采用SEM、AFM、XRD和EDS等先进测试分析手段,对磁控溅射SiC薄膜的物性进行了较为全面的测试和分析,进一步验证了在靶基距55 mm、溅射气压2.0 Pa的情况下,溅射功率在100~150 W、沉积温度在400~600℃应该是磁控溅射法SiC/Si薄膜沉积的较好工艺条件;同时,根据非晶和多晶半导体物理有关理论,对磁控溅射SiC薄膜有关定域态间近程跳跃导电的机理进行了推断和实验分析验证,定域态间声子辅助跳跃的平均电子激活能为? W≈0.015 eV。
最后,基于半导体场致电子发射理论机理,并通过超高真空场发射性能测试设备,对磁控溅射SiC薄膜的场发射性能及相关因素对其的影响进行了较为全面的测试和分析。场发射性能指标最高的磁控溅射SiC薄膜,其场发射电流密度从背景噪声中可靠分辨时的开启电场约为3.5 V/μm,场发射电流密度为0.05 mA/cm2时阈值电场为5.6 V/μm,电场为10 V/μm时的场发射电流密度达到0.71 mA/cm2,磁控溅射SiC薄膜的功函数(势垒高度)约为1.613 eV,具有良好的场发射性能。
Energy Sources, materials and information related science are forerunners and supporters of the new technology revolution. As a kind of special style material, solid functional films are widely applied in high and new technology situation, such as nano-electronics, micro-electronics, photo- electronics, magnetronics, high-sensibility sensors, and economical, high- efficiency, large-area solar cells etc. With the excellent performances of mechanics, electronics, thermodynamics, photonics etc., SiC films have great application potencial in the field of high-temperature, high-frequency, high- power, anti-radiation, etc., which become the prior choice of new generation of wide band gap semiconductor materials and devices with extreme properties and capable applied in extreme situations.
Firstly, the peculiar structural, physi-chemical and electronical characteristics of wide band SiC semiconductor were summary introduced. The international research situation, achievements and existing problems related to SiC bulk and film growth, field emission properties and related devices were summarized. The research direction, contents and goals of the thesis were determined.
Secondly, based on fully comprehending and mastering the film fabrication methods, SiC films with compact structure, high purity, and good adhension were fabricated by magnetron sputtering deposition (MS). The SiC films were layer by layer hetero-epitaxial grown on Si substrates under the optimal MS technique condition, and according to the film growth mechanism of non-spontaneous core formation, atoms transference and continuous growth.
Thirdly, based on fully comprehending and mastering the film characterization methods, the physical characteristics of magnetron sputtered SiC films were generally measured and analyzed by advanced measurements, including SEM, AFM, XRD, EDS, etc. The optimal technique condition for magnetron sputtering SiC/Si film deposition were more verified as 100~ 150W DC sputtering power, and 400~600℃substrate temperature under the situation of 55 mm target-substrate distance and 2.0 Pa sputtering pressure. At the same time, the conducting mechanism of short-range jumping between the fixed-region status related to the MS SiC films were concluded and experimetally analyzed according to the theory of amorphous and polycrystal semiconductor physics. The average electronic activation energy of phonon assised jumping between the fixed-region status was ?W≈0.015 eV.
Finally, based on semiconductor field emission mechanism and theory, and by field emission measurement equipment with super-high vacuum, the field emission properties of and other effects on MS SiC films were com- prehensively measured and analyzed. The optimal field emission parameters for MS SiC films were as follows: The open field (defined as current density reliably identified from the background noise) was 3.5 V/μm. The threshold field (defined as the field when the emission current density is 0.05 mA/cm2) was 5.6 V/μm. The emission current density was achieved to 0.71 mA/cm2 with the applied field of 10 V/μm. Work function (potential height) was about 1.613 eV. The MS SiC films were with excellent field emission capability.
本文首先对宽禁带SiC半导体材料独特的结构特性、理化及电子学性质进行了简要介绍,对目前国内外有关SiC单晶体及薄膜生长、SiC场发射性能及相关器件的研究现状、取得的成绩及存在的问题进行了概述,确定了课题的主要研究方向、内容和目标。
其次,在充分了解掌握薄膜制备方法手段的基础上,采用磁控溅射法,通过探索磁控溅射SiC薄膜的较好生长工艺条件,使结构致密、纯度较高、附着性良好的SiC薄膜,按照非自发形核、原子团的迁移、连续薄膜生长的机理,在异质Si衬底上实现了层状外延式生长。
然后,在充分了解掌握薄膜材料物性分析表征方法的基础上,采用SEM、AFM、XRD和EDS等先进测试分析手段,对磁控溅射SiC薄膜的物性进行了较为全面的测试和分析,进一步验证了在靶基距55 mm、溅射气压2.0 Pa的情况下,溅射功率在100~150 W、沉积温度在400~600℃应该是磁控溅射法SiC/Si薄膜沉积的较好工艺条件;同时,根据非晶和多晶半导体物理有关理论,对磁控溅射SiC薄膜有关定域态间近程跳跃导电的机理进行了推断和实验分析验证,定域态间声子辅助跳跃的平均电子激活能为? W≈0.015 eV。
最后,基于半导体场致电子发射理论机理,并通过超高真空场发射性能测试设备,对磁控溅射SiC薄膜的场发射性能及相关因素对其的影响进行了较为全面的测试和分析。场发射性能指标最高的磁控溅射SiC薄膜,其场发射电流密度从背景噪声中可靠分辨时的开启电场约为3.5 V/μm,场发射电流密度为0.05 mA/cm2时阈值电场为5.6 V/μm,电场为10 V/μm时的场发射电流密度达到0.71 mA/cm2,磁控溅射SiC薄膜的功函数(势垒高度)约为1.613 eV,具有良好的场发射性能。
Energy Sources, materials and information related science are forerunners and supporters of the new technology revolution. As a kind of special style material, solid functional films are widely applied in high and new technology situation, such as nano-electronics, micro-electronics, photo- electronics, magnetronics, high-sensibility sensors, and economical, high- efficiency, large-area solar cells etc. With the excellent performances of mechanics, electronics, thermodynamics, photonics etc., SiC films have great application potencial in the field of high-temperature, high-frequency, high- power, anti-radiation, etc., which become the prior choice of new generation of wide band gap semiconductor materials and devices with extreme properties and capable applied in extreme situations.
Firstly, the peculiar structural, physi-chemical and electronical characteristics of wide band SiC semiconductor were summary introduced. The international research situation, achievements and existing problems related to SiC bulk and film growth, field emission properties and related devices were summarized. The research direction, contents and goals of the thesis were determined.
Secondly, based on fully comprehending and mastering the film fabrication methods, SiC films with compact structure, high purity, and good adhension were fabricated by magnetron sputtering deposition (MS). The SiC films were layer by layer hetero-epitaxial grown on Si substrates under the optimal MS technique condition, and according to the film growth mechanism of non-spontaneous core formation, atoms transference and continuous growth.
Thirdly, based on fully comprehending and mastering the film characterization methods, the physical characteristics of magnetron sputtered SiC films were generally measured and analyzed by advanced measurements, including SEM, AFM, XRD, EDS, etc. The optimal technique condition for magnetron sputtering SiC/Si film deposition were more verified as 100~ 150W DC sputtering power, and 400~600℃substrate temperature under the situation of 55 mm target-substrate distance and 2.0 Pa sputtering pressure. At the same time, the conducting mechanism of short-range jumping between the fixed-region status related to the MS SiC films were concluded and experimetally analyzed according to the theory of amorphous and polycrystal semiconductor physics. The average electronic activation energy of phonon assised jumping between the fixed-region status was ?W≈0.015 eV.
Finally, based on semiconductor field emission mechanism and theory, and by field emission measurement equipment with super-high vacuum, the field emission properties of and other effects on MS SiC films were com- prehensively measured and analyzed. The optimal field emission parameters for MS SiC films were as follows: The open field (defined as current density reliably identified from the background noise) was 3.5 V/μm. The threshold field (defined as the field when the emission current density is 0.05 mA/cm2) was 5.6 V/μm. The emission current density was achieved to 0.71 mA/cm2 with the applied field of 10 V/μm. Work function (potential height) was about 1.613 eV. The MS SiC films were with excellent field emission capability.
引文
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