InP基HEMT器件及毫米波单片放大电路研究
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摘要
InP基高电子迁移率晶体管（HEMT）具有电子迁移率高、噪声低、功耗低及增益高等特点，是毫米波段最具竞争力的半导体器件之一，在高速、高频等应用领域中占据着重要的地位。本文重点围绕InP基HEMT器件关键工艺、器件制备、单片集成电路设计等方面展开工作，取得的主要研究成果如下：
1.开发了InP基HEMT器件关键工艺：A)通过PMGI/ZEP520A/PMGI/ZEP520A自对准曝光工艺，成功开发出69nm栅线条，避免了两次曝光套刻偏差、减少了曝光时间并提高了抗干法刻蚀能力；B)采用Ti/Pt/Au非合金欧姆接触金属，保证了良好的热稳定性和光滑平整的表面形貌，欧姆接触电阻Rc为0.058Ω·mm；C)开展了InP基HEMT器件功能材料腐蚀和刻蚀实验：调节丁二酸腐蚀溶液配比，实现了InGaAs帽层材料与InAlAs势垒层材料腐蚀选择比大于100；ICP低速低损伤刻蚀InP腐蚀截止层工艺，保证了横向上InP材料对器件的大面积保护及纵向上薄栅沟间距对跨导的有利影响。
2.对关键工艺进行整合，在自行设计的晶格匹配型外延材料上，研制出高性能InP基HEMT器件，基本满足W波段MMIC设计要求。不带InP截止层HEMT器件，电流增益截止频率(fT)为150GHz，最高振荡频率(fmax)为201GHz；带InP截止层HEMT器件，钝化前：fT=164GHz，fmax=389GHz；钝化后：fT=135GHz，fmax=325GHz。
3.在InP基HEMT器件工艺的基础上，建立了整套MMIC工艺流程。MMIC整套工艺中集成了InP基HEMT晶体管、TaN薄膜电阻、Si3N4MIM电容、CPW传输线和空气桥，完全满足毫米波集成电路的设计与制作。
4.根据工艺实验和测试数据结果，分析了横向栅槽腐蚀宽度和钝化工艺对器件交直流特性的影响，从理论上对器件工艺的优化进行指导；其次分析了栅宽对器件增益和功率特性的影响，并对器件频率和噪声性能随着器件偏置的变化关系进行分析，为电路设计挑选出最佳器件尺寸和偏置。
5.采用原理图与电磁场联合仿真的方法设计了一款W波段单级LNA和一款两级Cascode放大器，并利用开发的InP基HEMT MMIC工艺流程进行流片、测试。W波段单级LNA芯片面积为900μm×975μm, Gain=15.2dB@95GHz，NF=4.3dB@87.5GHz，Psat,out=8.05dBm@88GHz。W波段Cascode放大器芯片面积为1.85mm×0.932mm, Gain=26.2dB@106GHz。级间采用叉指电容进行耦合，提高了电路稳定性。两款MMIC的研制成功，表明了所开发的InP基HEMT工艺对W波段电路的应用潜力。
InP-based high electron mobility transistors (HEMTs) have shown extremely highelectron mobility, superior noise figure, low power consumption and high gainperformance, making them as the competitive candidates for millimeter waveapplications. In this dissertation, critical process, device fabrication and monolithicamplifier circuits for InP-based HEMTs have been studied. The main results aresummarized as follows:
1. Critical fabrication technologies for InP-based HEMT have been developed: A)69nm T-shapped gate is successfully developed in PMGI/ZEP520A/PMGI/ZEP520Aby self-aligned exposure method, which avoids alignment deviation, decreases exposuretime and improves etch-resistant ability. B) Comparative experiments suggest thatTi/Pt/Au non-alloyed ohimic contact exhibits superior thermal stability and surfacemorphology, and the non-alloyed contact resistance is0.058Ω·mm. C) A series ofetching experiments have been carried out. The gate recess was formed by selective wetchemical etching. Etching selectivity ratio of InGaAs over InAlAs can exceed to100byadjusting the mixing proportion of succinic acid and hydrogen peroxide. The lowdamage dry-etching of InP stopper layer by ICP is explored to decrease gate-channelvertical distance and simultaneously ensure the protective effect of InP layer to theexposed gate-recess region.
2. Based on the developed critical technologies, InP-based HEMTs have beensuccessfully fabricated on the lattice-matched epitaxial layer designed and optimized byourselves, which are quite suitable for W-band circuits. The current gain cutofffrequency (fT) and the maximum oscillation frequency (fmax) are150GHz and201GHzfor devices without InP etching-stop layer. With regard to ones with InP etching-stopperlayer, fTand fmaxare164GHz and389GHz, but decrease to135GHz and325GHzafter passivation.
3. A full set of3inch InP-based HEMT MMIC process has been established,which includes: InP-based HEMT, TaN thin film resistance, Si3N4MIM capacitance,CPW transmission line and airbridges. It is suitable for the design and fabrication ofmillimeter wave integrated circuits.
4. The impact of gate-recess lateral width and Si3N4passivation process on the DC and RF characteristics of InP-based HEMTs have been discussed to providetheoretical guidance for the optimization of device. The dependence of frequency andnoise characteristics on dimension and bias condition has been investigated to directchoosing the appropriate device and bias condition for millimeter-wave circuit design.
5. Two chips of W-band monolithic amplifier circuits have been designed andfabricated in InP-based HEMT MMIC technology. The designed W-band low noiseamplifier is realized in cascode configuration and coplanar waveguid topology, leadingto a compact chip-size of0.992mm0.987mm and an excellent small-signal gain of15.2dB at95GHz. The noise figure is4.3dB at87.5GHz, and the saturated outputpower is8.05dBm at88GHz. The two-stage W-band cascode amplifier has a chip-sizeof1.85mm×0.932mm and a small-signal gain of25.7GHz at106GHz. Inter-digitalcoupling capacitor blocks low frequency signal, thus enhancing the stability of amplifier.The successful design experiments indicate that the InP-based HEMT technology has agreat potential for W-band applications.
1.开发了InP基HEMT器件关键工艺：A)通过PMGI/ZEP520A/PMGI/ZEP520A自对准曝光工艺，成功开发出69nm栅线条，避免了两次曝光套刻偏差、减少了曝光时间并提高了抗干法刻蚀能力；B)采用Ti/Pt/Au非合金欧姆接触金属，保证了良好的热稳定性和光滑平整的表面形貌，欧姆接触电阻Rc为0.058Ω·mm；C)开展了InP基HEMT器件功能材料腐蚀和刻蚀实验：调节丁二酸腐蚀溶液配比，实现了InGaAs帽层材料与InAlAs势垒层材料腐蚀选择比大于100；ICP低速低损伤刻蚀InP腐蚀截止层工艺，保证了横向上InP材料对器件的大面积保护及纵向上薄栅沟间距对跨导的有利影响。
2.对关键工艺进行整合，在自行设计的晶格匹配型外延材料上，研制出高性能InP基HEMT器件，基本满足W波段MMIC设计要求。不带InP截止层HEMT器件，电流增益截止频率(fT)为150GHz，最高振荡频率(fmax)为201GHz；带InP截止层HEMT器件，钝化前：fT=164GHz，fmax=389GHz；钝化后：fT=135GHz，fmax=325GHz。
3.在InP基HEMT器件工艺的基础上，建立了整套MMIC工艺流程。MMIC整套工艺中集成了InP基HEMT晶体管、TaN薄膜电阻、Si3N4MIM电容、CPW传输线和空气桥，完全满足毫米波集成电路的设计与制作。
4.根据工艺实验和测试数据结果，分析了横向栅槽腐蚀宽度和钝化工艺对器件交直流特性的影响，从理论上对器件工艺的优化进行指导；其次分析了栅宽对器件增益和功率特性的影响，并对器件频率和噪声性能随着器件偏置的变化关系进行分析，为电路设计挑选出最佳器件尺寸和偏置。
5.采用原理图与电磁场联合仿真的方法设计了一款W波段单级LNA和一款两级Cascode放大器，并利用开发的InP基HEMT MMIC工艺流程进行流片、测试。W波段单级LNA芯片面积为900μm×975μm, Gain=15.2dB@95GHz，NF=4.3dB@87.5GHz，Psat,out=8.05dBm@88GHz。W波段Cascode放大器芯片面积为1.85mm×0.932mm, Gain=26.2dB@106GHz。级间采用叉指电容进行耦合，提高了电路稳定性。两款MMIC的研制成功，表明了所开发的InP基HEMT工艺对W波段电路的应用潜力。
InP-based high electron mobility transistors (HEMTs) have shown extremely highelectron mobility, superior noise figure, low power consumption and high gainperformance, making them as the competitive candidates for millimeter waveapplications. In this dissertation, critical process, device fabrication and monolithicamplifier circuits for InP-based HEMTs have been studied. The main results aresummarized as follows:
1. Critical fabrication technologies for InP-based HEMT have been developed: A)69nm T-shapped gate is successfully developed in PMGI/ZEP520A/PMGI/ZEP520Aby self-aligned exposure method, which avoids alignment deviation, decreases exposuretime and improves etch-resistant ability. B) Comparative experiments suggest thatTi/Pt/Au non-alloyed ohimic contact exhibits superior thermal stability and surfacemorphology, and the non-alloyed contact resistance is0.058Ω·mm. C) A series ofetching experiments have been carried out. The gate recess was formed by selective wetchemical etching. Etching selectivity ratio of InGaAs over InAlAs can exceed to100byadjusting the mixing proportion of succinic acid and hydrogen peroxide. The lowdamage dry-etching of InP stopper layer by ICP is explored to decrease gate-channelvertical distance and simultaneously ensure the protective effect of InP layer to theexposed gate-recess region.
2. Based on the developed critical technologies, InP-based HEMTs have beensuccessfully fabricated on the lattice-matched epitaxial layer designed and optimized byourselves, which are quite suitable for W-band circuits. The current gain cutofffrequency (fT) and the maximum oscillation frequency (fmax) are150GHz and201GHzfor devices without InP etching-stop layer. With regard to ones with InP etching-stopperlayer, fTand fmaxare164GHz and389GHz, but decrease to135GHz and325GHzafter passivation.
3. A full set of3inch InP-based HEMT MMIC process has been established,which includes: InP-based HEMT, TaN thin film resistance, Si3N4MIM capacitance,CPW transmission line and airbridges. It is suitable for the design and fabrication ofmillimeter wave integrated circuits.
4. The impact of gate-recess lateral width and Si3N4passivation process on the DC and RF characteristics of InP-based HEMTs have been discussed to providetheoretical guidance for the optimization of device. The dependence of frequency andnoise characteristics on dimension and bias condition has been investigated to directchoosing the appropriate device and bias condition for millimeter-wave circuit design.
5. Two chips of W-band monolithic amplifier circuits have been designed andfabricated in InP-based HEMT MMIC technology. The designed W-band low noiseamplifier is realized in cascode configuration and coplanar waveguid topology, leadingto a compact chip-size of0.992mm0.987mm and an excellent small-signal gain of15.2dB at95GHz. The noise figure is4.3dB at87.5GHz, and the saturated outputpower is8.05dBm at88GHz. The two-stage W-band cascode amplifier has a chip-sizeof1.85mm×0.932mm and a small-signal gain of25.7GHz at106GHz. Inter-digitalcoupling capacitor blocks low frequency signal, thus enhancing the stability of amplifier.The successful design experiments indicate that the InP-based HEMT technology has agreat potential for W-band applications.
引文
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