栅介质的介电特性对AlGaN/GaN MISHEMTs性能影响研究
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摘要
由于自发极化和压电极化作用，AlGaN/GaN异质结界面具有很高浓度的二维电子气（2DEG），基于AlGaN/GaN异质结的场效应晶体管(heterostructurefiled-effect-transistors, HFETs，也常称为高电子迁移率晶体管，high-electron-mobilitytransistors, HEMTs)具有输出功率大、效率高等优点，被认为是高频、高温、大功率半导体器件的重要候选材料。
由于具有优异的频率特性，针对高频领域应用的AlGaN/GaN HEMTs器件常采用MESHEMTs结构（即：金属-半导体高电子迁移率晶体管，metal-semiconductorhigh-electron-mobility transistors），然而，其严重的电流崩塌效应和较大的栅泄漏电流成为AlGaN/GaN MESHEMTs应用的主要问题，栅介质的引入（即：金属-绝缘体-半导体高电子迁移率晶体管，metal-insulator-semiconductor high-electron-mobilitytransistors，MISHEMTs）成为可行的解决之道，它不仅可以有效抑制电流崩塌，而且可极大地降低栅漏电。然而，目前对AlGaN/GaN MISHEMTs器件的研究主要集中在非极性栅介质材料对器件性能的影响方面，且仅关注和利用了栅介质的绝缘特性，很少涉及极性栅介质在AlGaN/GaN MISHEMTs中的应用，栅介质极化特性对AlGaN/GaN MISHEMTs器件性能的影响研究。
本论文对比研究了非极性栅介质和极性栅介质对AlGaN/GaNMISHEMTs特性的影响，非极性栅介质选择Al_2O_3薄膜作为研究对象，并选用了两种具有代表性的典型极性介电材料，研究极化特性对AlGaN/GaN MISHEMTs性能的影响，一种极性介电薄膜为掺钠的Beta氧化铝（β-Al_2O_3，sodium-beta-aluminium，简写为SBA），该介电材料是在Beta氧化铝骨架结构中插入带正电的钠离子而形成的一种极性介电材料，被归于电解质，也称为钠离子导体（电子的绝缘体）；另一种极性介电材料则为铁电体，考虑到工艺兼容性，本论文选择了一种新的铁电体材料—HfTiO铁电薄膜作为栅介质，因此，整个论文由以下几方面研究工作构成：
1、首先，本论文采用分子束外延方法（MBE）在AlGaN/GaN异质结场效应晶体管源、漏之间沉积Al_2O_3薄膜，并研制MISHEMTs结构的AlGaN/GaN异质结场效应晶体管，测量了MISHEMTs特性以及AlGaN/GaN异质结2DEG浓度、迁移率，对比研究了介电薄膜对MISHEMTs特性以及AlGaN/GaN异质结2DEG输运特性的影响，研究结果显示：Al_2O_3薄膜的沉积使2DEG浓度和迁移率均有所提高，2DEG浓度约增加30%，迁移率约提高23%。器件特性的对比研究也显示：Al_2O_3薄膜的引入使AlGaN/GaN器件直流输出特性得到了显著提高，与传统MESHEMTs相比，栅泄漏电流减小了约2个数量级，器件最大输出电流密度从590mA/mm提高到790mA/mm，约提高了34%；0V栅压下，器件饱和直流输出电流密度从360mA/mm提高到700mA/mm，约提高了94%；器件最大跨导从120mS/mm增加到170mS/mm，约增加了42%。通过高分辨率X射线衍射（HRXRD）对比分析表明：Al_2O_3薄膜的沉积在AlGaN势垒层中引入了张应力，从而导致AlGaN/GaN界面2DEG浓度和迁移率的提高。在实验基础上，论文还进一步采用经验公式及第一性原理计算的方法，对以上的影响因素从理论上进行了解释。
2、在非极性介质（Al_2O_3薄膜）对AlGaN/GaN界面2DEG输运特性及器件性能影响研究基础上，通过在MBE生长过程中引入Na的分子束流，从而在Al_2O_3薄膜中掺入Na。对所生长薄膜的微观结构分析结果显示：所生长薄膜为非晶薄膜，X射线光电子能谱（XPS）对薄膜中的Na1s和Al2p分析，结果显示与SBA的特征峰位相一致；对所生长薄膜的介电特性测量表明：在1MHz频率下，薄膜的介电常数约为50，远高于Al_2O_3薄膜的介电常数，这说明：Na+在电场作用下产生了电极化，且薄膜的绝缘特性良好，适合作为介质材料使用；在此基础上，论文进一步研制了以SBA薄膜为栅介质的AlGaN/GaN MISHEMTs。对器件特性的对比研究显示：当SBA薄膜与AlGaN势垒层之间的界面特性为AlOx/AlGaN时，栅介质对器件特性的影响与Al_2O_3栅介质的影响规律相一致，特别是阈值电压向更加负的方向移动；而当SBA薄膜与AlGaN势垒层之间的界面特性为Na+/AlGaN时，栅介质对器件阈值电压的影响规律却完全不同，界面正电荷使得器件阈值电压向正方向移动了约2V，从而显示出极性介质与半导体的界面特性对器件性能具有重要影响。
3、在初步显示出极性电介质对器件特性影响规律基础上，本论文进一步研究了另一种典型极性电介质——铁电对AlGaN/GaN MISHEMTs器件特性的影响。采用MBE方法制备了HfTiO薄膜，分别从材料特征、器件特性以及影响机理等方面开展了研究。材料介电特性研究显示：HfTiO薄膜具有铁电性，属于铪基铁电体中的一员，并通过铪/钛比的调整、薄膜沉积温度的优化、薄膜氧含量的调控等技术措施优化了HfTiO薄膜的铁电特性。在此基础上，论文进一步研制了以HfTiO铁电薄膜为栅介质的AlGaN/GaN MISHEMTs。对器件特性研究结果显示：HfTiO铁电薄膜的引入使器件阈值电压也发生了向正方向移动，从原来的-4V调节到-0.6V。阈值电压的正向移动与沟道2DEG注入并积聚于HfTiO/AlGaN界面有关。
Due to the spontaneous polarization and piezoelectric polarization, a highconcentration of two-dimensional electron gas (2DEG) exists at the AlGaN/GaN hetero-junction interface. Because of the superior properties of the AlGaN/GaN hetero-structure field-effect transistors (HFETs), AlGaN/GaN hererojunction is considered tobe an important candidate material for high-frequency, high-temperature andhigh-power semiconductor device. The AlGaN/GaN HFETs is also called as high-electron-mobility transistors (HEMTs).
For the excellent frequency characteristics, the high-frequency AlGaN/GaNHEMTs often used to be the metal-semiconductor high-electron-mobility transistors(MESHEMTs) structure. However, the practical application of AlGaN/GaNMESHEMTs was limited by the serious current collapse and large gate leakage current.The gate dielectrics can not only effectively suppress the current collapse, but alsogreatly reduce the gate leakage. The structure of device with gate dielectrics is called asmetal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs).However, the study of AlGaN/GaN MISHEMTs mainly focused on the non-polar gatedielectrics. Little attention was paid to the effect of the polarization of gate dielectricson the performance of AlGaN/GaN MISHEMTs.
This dissertation compares the impacts of non-polar gate dielectrics and polar gatedielectrics on the performance of the AlGaN/GaN MISHEMTs. The Al_2O_3thin filmswere used as the non-polar gate dielectrics. The impacts of the polarizationcharacteristics on the performance of the AlGaN/GaN MISHEMTs were selected tworepresentative typical polar dielectric materials. One was the beta alumina dopedsodium (β-Al_2O_3, sodium-beta-aluminium, abbreviated as SBA). The SBA has aunusual crystal structure that is distinctly two dimensional, with an about1.13nmaluminium ixude layer and a sodium ions. The sodium ions can move freely only indirections parallel to the lattice planes, but restricted to a few angstroms in thedirectiona normal to the planes. Therefore, it’s not only an excellent ionic conductor, butalso an outstanding dielectric. For the polarization of sodium ions, the SBA is also an electrolyte. The other polar dielectric material was the ferroelectric. Considering thecompatibility, a new ferroelectric material—HfTiO ferroelectric thin film was chose as agate dielectric.
The first phase of this work involved the non-polar dielectric—Al_2O_3thin film.The Al_2O_3thin films were deposited between the source and drain of the AlGaN/GaNHFETs by molecular beam epitaxy (MBE). The AlGaN/GaN MISHEMTs structureswere prepared. The performance of the MISHEMTs, as well as the concentration andmobility of2DEG were measured. The results show: the2DEG concentration andmobility were increased by the Al_2O_3thin films. The maximum increase of2DEGconcentration and mobility were30%and23%respectively. The comparative study ofthe device performance show that the DC output characteristics of the AlGaN/GaNMISHEMTs have been significantly improved attributing to the Al_2O_3films. Comparedwith the conventional MESHEMTs, the gate leakage current is reduced by about twoorders of magnitude. The maximum output drain current density was increased from590to790mA/mm, which is about34%improvement. When the gate bias is0V, thesaturation output current densities of the AlGaN/GaN MESHEMTs and MISHEMTswere360and700mA/mm respectively, which is increased by about94%. Themaximum transconductance was increased from120to170mS/mm, which is about42%improvement. The comparative analysis of high-resolution X-ray diffraction(HRXRD) shows that the tensile stress was introduced into the AlGaN barrier layer afterthe deposition of Al_2O_3thin films, resulting in the improvement of2DEG concentrationand mobility. The effect factor was explained by the theoretical results of empiricalformula method and the First Principles.
The second phase of this work involved the SBA electrolyte thin film. The sodiumions were doped into Al_2O_3thin film by the introduction of Na molecular during theMBE growth process. The microstructure analysis of the prepared thin films shows thatthe grown thin films were amorphous. The X-ray photoelectron spectroscopy (XPS)analysis result was consistent with the characteristic peak of SBA. The measurements ofdielectric properties show that the dielectric constant of the film was about50at1MHzfrequency, which is lager than that of Al_2O_3thin film. The result suggests that thesodium ions exhibit the polar property. The result also shows that the SBA thin filmexhibits good insulation characteristic. Therefore, it’s suitable for gate dielectric material. Then, the AlGaN/GaN MISHEMTs with SBA gate dielectrics were prepared.The results show: when it forms the AlOx/AlGaN interface between SBA thin films andAlGaN barrier layer, the impacts on the device performance were the same as Al_2O_3gate dielectric, specially the threshold voltage shifted more negatively. However, whenit forms the Na+/AlGaN interface between SBA thin films and AlGaN barrier layer, theeffect of the gate dielectric on the threshold voltage of MISHEMTs was completelydifferent. The threshold voltage of MISHEMTs shifted positively about2V by theinfluence of the interface positive charge. The results suggest the important influence ofthe interface characteristics of polar dielectrics and semiconductor on the deviceperformance.
The final phase of this work involved the HfTiO ferroelectric thin film. The furtherstudy of the effects of another typical polar dielectric—ferroelectric on thecharacteristics of AlGaN/GaN MISHEMTs was carried out. The HfTiO thin films wereprepared by MBE. The material characteristics studies show that the HfTiO thin filmexhibits ferroelectric properties, which belongs to the class of the HfO_2-basedferroelectrics. The ferroelectric properties of HfTiO thin film were improved byadjusting the ratio of titanium and hafnium in the film, optimizing the film depositiontemperature and regulating the oxygen content of the film. The device performancesstudy results show that the device threshold voltage is also shifted positively from-4to-0.6V. The positively shift of the threshold voltage related to the channel2DEG wereinjected into and accumulation at the interface of HfTiO thin film and AlGaN barrierlayer.
由于具有优异的频率特性，针对高频领域应用的AlGaN/GaN HEMTs器件常采用MESHEMTs结构（即：金属-半导体高电子迁移率晶体管，metal-semiconductorhigh-electron-mobility transistors），然而，其严重的电流崩塌效应和较大的栅泄漏电流成为AlGaN/GaN MESHEMTs应用的主要问题，栅介质的引入（即：金属-绝缘体-半导体高电子迁移率晶体管，metal-insulator-semiconductor high-electron-mobilitytransistors，MISHEMTs）成为可行的解决之道，它不仅可以有效抑制电流崩塌，而且可极大地降低栅漏电。然而，目前对AlGaN/GaN MISHEMTs器件的研究主要集中在非极性栅介质材料对器件性能的影响方面，且仅关注和利用了栅介质的绝缘特性，很少涉及极性栅介质在AlGaN/GaN MISHEMTs中的应用，栅介质极化特性对AlGaN/GaN MISHEMTs器件性能的影响研究。
本论文对比研究了非极性栅介质和极性栅介质对AlGaN/GaNMISHEMTs特性的影响，非极性栅介质选择Al_2O_3薄膜作为研究对象，并选用了两种具有代表性的典型极性介电材料，研究极化特性对AlGaN/GaN MISHEMTs性能的影响，一种极性介电薄膜为掺钠的Beta氧化铝（β-Al_2O_3，sodium-beta-aluminium，简写为SBA），该介电材料是在Beta氧化铝骨架结构中插入带正电的钠离子而形成的一种极性介电材料，被归于电解质，也称为钠离子导体（电子的绝缘体）；另一种极性介电材料则为铁电体，考虑到工艺兼容性，本论文选择了一种新的铁电体材料—HfTiO铁电薄膜作为栅介质，因此，整个论文由以下几方面研究工作构成：
1、首先，本论文采用分子束外延方法（MBE）在AlGaN/GaN异质结场效应晶体管源、漏之间沉积Al_2O_3薄膜，并研制MISHEMTs结构的AlGaN/GaN异质结场效应晶体管，测量了MISHEMTs特性以及AlGaN/GaN异质结2DEG浓度、迁移率，对比研究了介电薄膜对MISHEMTs特性以及AlGaN/GaN异质结2DEG输运特性的影响，研究结果显示：Al_2O_3薄膜的沉积使2DEG浓度和迁移率均有所提高，2DEG浓度约增加30%，迁移率约提高23%。器件特性的对比研究也显示：Al_2O_3薄膜的引入使AlGaN/GaN器件直流输出特性得到了显著提高，与传统MESHEMTs相比，栅泄漏电流减小了约2个数量级，器件最大输出电流密度从590mA/mm提高到790mA/mm，约提高了34%；0V栅压下，器件饱和直流输出电流密度从360mA/mm提高到700mA/mm，约提高了94%；器件最大跨导从120mS/mm增加到170mS/mm，约增加了42%。通过高分辨率X射线衍射（HRXRD）对比分析表明：Al_2O_3薄膜的沉积在AlGaN势垒层中引入了张应力，从而导致AlGaN/GaN界面2DEG浓度和迁移率的提高。在实验基础上，论文还进一步采用经验公式及第一性原理计算的方法，对以上的影响因素从理论上进行了解释。
2、在非极性介质（Al_2O_3薄膜）对AlGaN/GaN界面2DEG输运特性及器件性能影响研究基础上，通过在MBE生长过程中引入Na的分子束流，从而在Al_2O_3薄膜中掺入Na。对所生长薄膜的微观结构分析结果显示：所生长薄膜为非晶薄膜，X射线光电子能谱（XPS）对薄膜中的Na1s和Al2p分析，结果显示与SBA的特征峰位相一致；对所生长薄膜的介电特性测量表明：在1MHz频率下，薄膜的介电常数约为50，远高于Al_2O_3薄膜的介电常数，这说明：Na+在电场作用下产生了电极化，且薄膜的绝缘特性良好，适合作为介质材料使用；在此基础上，论文进一步研制了以SBA薄膜为栅介质的AlGaN/GaN MISHEMTs。对器件特性的对比研究显示：当SBA薄膜与AlGaN势垒层之间的界面特性为AlOx/AlGaN时，栅介质对器件特性的影响与Al_2O_3栅介质的影响规律相一致，特别是阈值电压向更加负的方向移动；而当SBA薄膜与AlGaN势垒层之间的界面特性为Na+/AlGaN时，栅介质对器件阈值电压的影响规律却完全不同，界面正电荷使得器件阈值电压向正方向移动了约2V，从而显示出极性介质与半导体的界面特性对器件性能具有重要影响。
3、在初步显示出极性电介质对器件特性影响规律基础上，本论文进一步研究了另一种典型极性电介质——铁电对AlGaN/GaN MISHEMTs器件特性的影响。采用MBE方法制备了HfTiO薄膜，分别从材料特征、器件特性以及影响机理等方面开展了研究。材料介电特性研究显示：HfTiO薄膜具有铁电性，属于铪基铁电体中的一员，并通过铪/钛比的调整、薄膜沉积温度的优化、薄膜氧含量的调控等技术措施优化了HfTiO薄膜的铁电特性。在此基础上，论文进一步研制了以HfTiO铁电薄膜为栅介质的AlGaN/GaN MISHEMTs。对器件特性研究结果显示：HfTiO铁电薄膜的引入使器件阈值电压也发生了向正方向移动，从原来的-4V调节到-0.6V。阈值电压的正向移动与沟道2DEG注入并积聚于HfTiO/AlGaN界面有关。
Due to the spontaneous polarization and piezoelectric polarization, a highconcentration of two-dimensional electron gas (2DEG) exists at the AlGaN/GaN hetero-junction interface. Because of the superior properties of the AlGaN/GaN hetero-structure field-effect transistors (HFETs), AlGaN/GaN hererojunction is considered tobe an important candidate material for high-frequency, high-temperature andhigh-power semiconductor device. The AlGaN/GaN HFETs is also called as high-electron-mobility transistors (HEMTs).
For the excellent frequency characteristics, the high-frequency AlGaN/GaNHEMTs often used to be the metal-semiconductor high-electron-mobility transistors(MESHEMTs) structure. However, the practical application of AlGaN/GaNMESHEMTs was limited by the serious current collapse and large gate leakage current.The gate dielectrics can not only effectively suppress the current collapse, but alsogreatly reduce the gate leakage. The structure of device with gate dielectrics is called asmetal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs).However, the study of AlGaN/GaN MISHEMTs mainly focused on the non-polar gatedielectrics. Little attention was paid to the effect of the polarization of gate dielectricson the performance of AlGaN/GaN MISHEMTs.
This dissertation compares the impacts of non-polar gate dielectrics and polar gatedielectrics on the performance of the AlGaN/GaN MISHEMTs. The Al_2O_3thin filmswere used as the non-polar gate dielectrics. The impacts of the polarizationcharacteristics on the performance of the AlGaN/GaN MISHEMTs were selected tworepresentative typical polar dielectric materials. One was the beta alumina dopedsodium (β-Al_2O_3, sodium-beta-aluminium, abbreviated as SBA). The SBA has aunusual crystal structure that is distinctly two dimensional, with an about1.13nmaluminium ixude layer and a sodium ions. The sodium ions can move freely only indirections parallel to the lattice planes, but restricted to a few angstroms in thedirectiona normal to the planes. Therefore, it’s not only an excellent ionic conductor, butalso an outstanding dielectric. For the polarization of sodium ions, the SBA is also an electrolyte. The other polar dielectric material was the ferroelectric. Considering thecompatibility, a new ferroelectric material—HfTiO ferroelectric thin film was chose as agate dielectric.
The first phase of this work involved the non-polar dielectric—Al_2O_3thin film.The Al_2O_3thin films were deposited between the source and drain of the AlGaN/GaNHFETs by molecular beam epitaxy (MBE). The AlGaN/GaN MISHEMTs structureswere prepared. The performance of the MISHEMTs, as well as the concentration andmobility of2DEG were measured. The results show: the2DEG concentration andmobility were increased by the Al_2O_3thin films. The maximum increase of2DEGconcentration and mobility were30%and23%respectively. The comparative study ofthe device performance show that the DC output characteristics of the AlGaN/GaNMISHEMTs have been significantly improved attributing to the Al_2O_3films. Comparedwith the conventional MESHEMTs, the gate leakage current is reduced by about twoorders of magnitude. The maximum output drain current density was increased from590to790mA/mm, which is about34%improvement. When the gate bias is0V, thesaturation output current densities of the AlGaN/GaN MESHEMTs and MISHEMTswere360and700mA/mm respectively, which is increased by about94%. Themaximum transconductance was increased from120to170mS/mm, which is about42%improvement. The comparative analysis of high-resolution X-ray diffraction(HRXRD) shows that the tensile stress was introduced into the AlGaN barrier layer afterthe deposition of Al_2O_3thin films, resulting in the improvement of2DEG concentrationand mobility. The effect factor was explained by the theoretical results of empiricalformula method and the First Principles.
The second phase of this work involved the SBA electrolyte thin film. The sodiumions were doped into Al_2O_3thin film by the introduction of Na molecular during theMBE growth process. The microstructure analysis of the prepared thin films shows thatthe grown thin films were amorphous. The X-ray photoelectron spectroscopy (XPS)analysis result was consistent with the characteristic peak of SBA. The measurements ofdielectric properties show that the dielectric constant of the film was about50at1MHzfrequency, which is lager than that of Al_2O_3thin film. The result suggests that thesodium ions exhibit the polar property. The result also shows that the SBA thin filmexhibits good insulation characteristic. Therefore, it’s suitable for gate dielectric material. Then, the AlGaN/GaN MISHEMTs with SBA gate dielectrics were prepared.The results show: when it forms the AlOx/AlGaN interface between SBA thin films andAlGaN barrier layer, the impacts on the device performance were the same as Al_2O_3gate dielectric, specially the threshold voltage shifted more negatively. However, whenit forms the Na+/AlGaN interface between SBA thin films and AlGaN barrier layer, theeffect of the gate dielectric on the threshold voltage of MISHEMTs was completelydifferent. The threshold voltage of MISHEMTs shifted positively about2V by theinfluence of the interface positive charge. The results suggest the important influence ofthe interface characteristics of polar dielectrics and semiconductor on the deviceperformance.
The final phase of this work involved the HfTiO ferroelectric thin film. The furtherstudy of the effects of another typical polar dielectric—ferroelectric on thecharacteristics of AlGaN/GaN MISHEMTs was carried out. The HfTiO thin films wereprepared by MBE. The material characteristics studies show that the HfTiO thin filmexhibits ferroelectric properties, which belongs to the class of the HfO_2-basedferroelectrics. The ferroelectric properties of HfTiO thin film were improved byadjusting the ratio of titanium and hafnium in the film, optimizing the film depositiontemperature and regulating the oxygen content of the film. The device performancesstudy results show that the device threshold voltage is also shifted positively from-4to-0.6V. The positively shift of the threshold voltage related to the channel2DEG wereinjected into and accumulation at the interface of HfTiO thin film and AlGaN barrierlayer.
引文
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