ZnO基薄膜的生长及其紫外光敏电阻器的研制
摘要
紫外光敏电阻器在光谱分析、火焰检测、臭氧检测、导弹预警、外太空技术和生物医药等领域有着巨大的应用前景,尤其是日盲光敏电阻器可以不受太阳光的干扰,具有较高的准确度。但是目前紫外光敏电阻器的暗光电阻比还不是很高,而且还没有日盲光敏电阻器的相关报道。本文主要是针对高暗光电阻比ZnO基光敏电阻器和MgZnO基日盲光敏电阻器做了系统性的研究,内容分如下几个部分：
1.制备了高暗光电阻比的ZnO基紫外光敏电阻器。用rf-MBE在c面蓝宝石衬底上生长了ZnO薄膜,研究了MgO缓冲层对于薄膜结构、光学和电学性能的影响,在此基础上制作了ZnO基紫外光敏电阻器。结果表明,MgO缓冲层可以极大地调节晶格失配,改善薄膜结构和光学、电学性能。紫外光敏电阻器的暗光电阻比高达2.3×105,在波长小于360nm的范围内,响应度超过1Ω-1·W-1。
2.用rf-MBE在r面蓝宝石衬底低温ZnO缓冲层上生长出了非极性高质量的α面ZnO薄膜。研究了衬底温度和缓冲层厚度对于薄膜质量的影响,并对a面ZnO薄膜的晶格振动和发光机理进行了系统的研究。结果表明：通过调节外延生长温度(630-C)和适当厚度(5nm)的LT-ZnO缓冲层,ZnO薄膜质量得以显著提高。
3.制作了低Mg组份的极性和非极性MgZnO紫外光敏电阻器。用rf-MBE在c面和r面蓝宝石衬底上生长了低Mg组份c面和a面MgZnO合金薄膜,制备了MgZnO紫外光敏电阻器。c面MgZnO紫外光敏电阻器的暗光电阻比高达105,波长小于310nm范围内响应度大于0.31Ω-1·W-1；a面MgZnO紫外光敏电阻器的暗光电阻比为三个数量级,336nm处响应度最大,为1.4×10-31Ω-1·W-1。
4.提出并实现了高性能的MgZnO日盲紫外光敏电阻器。用rf-MBE在r面蓝宝石衬底上采用双Mg组份渐进的低Mg组份MgZnO缓冲层,生长了单相纤锌矿非极性α面Mg0.48Zno.52O薄膜,并制备了日盲光敏电阻器。日盲光敏电阻器的响应度超过7.5×1041Ω-·W-1,暗光电阻比为1.7×104,这与目前的可见和红外光敏电阻器暗光电阻比相当,有关工作还没有见到报道。
5.用rf-MBE在蓝宝石衬底MgO缓冲层上研制了高声表面波传播速度的IDTs/ZnO/LT-ZnO/MgO/Al2O3结构的ZnO基声表面波滤波器。声传播速度最高达5010m/s,这是蓝宝石衬底上制备的ZnO基SAW器件文献报道中速度较高的。
UV photoresistors have been attracting more and more attention due to their huge potential in many applications, such as spectral analysis, flame detection, ozone detection, missile warning, out space technology and chemical/biological agent sensing systems. Especially, the solar-blind photoresistors have high accuracy because of without sunlight interference. However, the photosensitivity of the UV photoresistors is not high, and the research on photoresistors sensitive in the solar-blind region (240-287nm) is still rarely reported. In this thesis, UV photoresistors based on ZnO thin flims with high photosensitivity and solar-blind photoresistors based on MgZnO thin films were systematically studied. The main contents are as follows:
1. Fabrication of the high photosensitivity ZnO-based UV photoresistors
Ultraviolet photoresistors based on ZnO thin films were fabricated on sapphire substrates with MgO and LT-ZnO buffer layers by plasma-assisted molecular beam epitaxy. An extremely large dark/photo resistance ratio up to2.3×105was obtained with the light intensity of1.3mW/cm2at370nm. The spectral response shows a large responsivity of more than1Ω-1W-1in the UV region.
2. Growth of high quality non-polar a-plane ZnO thin films
High quality non-polar a-plane ZnO thin films were grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy with low-temperature ZnO buffer layer. The influence of the growth temperature and the thickness of the LT-ZnO buffer layer to the ZnO thin films'quality were studied, and the lattice vibrations and the luminescence mechanism were also studied. The results show that the quality of the non-polar a-plane ZnO thin films can be improved by adopting the appropriate temperature (630℃) and appropriate thickness (5nm) of the LT-ZnO buffer layer.
3. Fabrication of the UV photoresistors based on low-Mg-component polar and non-polar MgZnO thin films
Low-Mg-component c-plane and a-plane wurtzite MgZnO alloy films were grown on c-plane and r-plane sapphire substrate, and MgZnO-based UV photoresistors were fabricated. The photosensitivity of the c-plane MgZnO UV photoresistors is up to105, and the responsivity is over0.3Ω-1·W-1at the wavelength less than310nm. The photosensitivity of the a-plane MgZnO UV photoresistors is about103, and the maximum responsivity is1.4×10-3Ω-1·W-1at336nm.
4. Fabrication of the solar-blind photoresistors based on non-polar a-plane Mg0.48Zn0.52O thin films
Solar-blind photoresistors based on single phase wurtzite a-plane Mg0.48Zn0.52O thin films were achieved on r-plane sapphire substrates by radio-frequency plasma assisted molecular beam epitaxy with two low-Mg-component MgZnO buffer layers. The MgZnO photoresistors exhibit a large dark/photo resistance ratio up to1.7×104with the light intensity of0.61mW/cm2at260nm, which is compareable with the photosensitivity of the visible and IR photoresistors. The spectral response shows a sharp response peak in the solar-blind region with a maximum responsivity of1.5×10-3Ω-1·W-1.
5. Fabrication of SAW filters with high velocity based on ZnO films grown by rf-MBE
The SAW filters were fabricated with a structure of IDTs/ZnO/LT-ZnO/MgO/Al2O3. The SAW propagation velocity is up to5010m/s, which is one of the highest speed reported in the literature of ZnO-based SAW devices on the sapphire substrates.
1.制备了高暗光电阻比的ZnO基紫外光敏电阻器。用rf-MBE在c面蓝宝石衬底上生长了ZnO薄膜,研究了MgO缓冲层对于薄膜结构、光学和电学性能的影响,在此基础上制作了ZnO基紫外光敏电阻器。结果表明,MgO缓冲层可以极大地调节晶格失配,改善薄膜结构和光学、电学性能。紫外光敏电阻器的暗光电阻比高达2.3×105,在波长小于360nm的范围内,响应度超过1Ω-1·W-1。
2.用rf-MBE在r面蓝宝石衬底低温ZnO缓冲层上生长出了非极性高质量的α面ZnO薄膜。研究了衬底温度和缓冲层厚度对于薄膜质量的影响,并对a面ZnO薄膜的晶格振动和发光机理进行了系统的研究。结果表明：通过调节外延生长温度(630-C)和适当厚度(5nm)的LT-ZnO缓冲层,ZnO薄膜质量得以显著提高。
3.制作了低Mg组份的极性和非极性MgZnO紫外光敏电阻器。用rf-MBE在c面和r面蓝宝石衬底上生长了低Mg组份c面和a面MgZnO合金薄膜,制备了MgZnO紫外光敏电阻器。c面MgZnO紫外光敏电阻器的暗光电阻比高达105,波长小于310nm范围内响应度大于0.31Ω-1·W-1；a面MgZnO紫外光敏电阻器的暗光电阻比为三个数量级,336nm处响应度最大,为1.4×10-31Ω-1·W-1。
4.提出并实现了高性能的MgZnO日盲紫外光敏电阻器。用rf-MBE在r面蓝宝石衬底上采用双Mg组份渐进的低Mg组份MgZnO缓冲层,生长了单相纤锌矿非极性α面Mg0.48Zno.52O薄膜,并制备了日盲光敏电阻器。日盲光敏电阻器的响应度超过7.5×1041Ω-·W-1,暗光电阻比为1.7×104,这与目前的可见和红外光敏电阻器暗光电阻比相当,有关工作还没有见到报道。
5.用rf-MBE在蓝宝石衬底MgO缓冲层上研制了高声表面波传播速度的IDTs/ZnO/LT-ZnO/MgO/Al2O3结构的ZnO基声表面波滤波器。声传播速度最高达5010m/s,这是蓝宝石衬底上制备的ZnO基SAW器件文献报道中速度较高的。
UV photoresistors have been attracting more and more attention due to their huge potential in many applications, such as spectral analysis, flame detection, ozone detection, missile warning, out space technology and chemical/biological agent sensing systems. Especially, the solar-blind photoresistors have high accuracy because of without sunlight interference. However, the photosensitivity of the UV photoresistors is not high, and the research on photoresistors sensitive in the solar-blind region (240-287nm) is still rarely reported. In this thesis, UV photoresistors based on ZnO thin flims with high photosensitivity and solar-blind photoresistors based on MgZnO thin films were systematically studied. The main contents are as follows:
1. Fabrication of the high photosensitivity ZnO-based UV photoresistors
Ultraviolet photoresistors based on ZnO thin films were fabricated on sapphire substrates with MgO and LT-ZnO buffer layers by plasma-assisted molecular beam epitaxy. An extremely large dark/photo resistance ratio up to2.3×105was obtained with the light intensity of1.3mW/cm2at370nm. The spectral response shows a large responsivity of more than1Ω-1W-1in the UV region.
2. Growth of high quality non-polar a-plane ZnO thin films
High quality non-polar a-plane ZnO thin films were grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy with low-temperature ZnO buffer layer. The influence of the growth temperature and the thickness of the LT-ZnO buffer layer to the ZnO thin films'quality were studied, and the lattice vibrations and the luminescence mechanism were also studied. The results show that the quality of the non-polar a-plane ZnO thin films can be improved by adopting the appropriate temperature (630℃) and appropriate thickness (5nm) of the LT-ZnO buffer layer.
3. Fabrication of the UV photoresistors based on low-Mg-component polar and non-polar MgZnO thin films
Low-Mg-component c-plane and a-plane wurtzite MgZnO alloy films were grown on c-plane and r-plane sapphire substrate, and MgZnO-based UV photoresistors were fabricated. The photosensitivity of the c-plane MgZnO UV photoresistors is up to105, and the responsivity is over0.3Ω-1·W-1at the wavelength less than310nm. The photosensitivity of the a-plane MgZnO UV photoresistors is about103, and the maximum responsivity is1.4×10-3Ω-1·W-1at336nm.
4. Fabrication of the solar-blind photoresistors based on non-polar a-plane Mg0.48Zn0.52O thin films
Solar-blind photoresistors based on single phase wurtzite a-plane Mg0.48Zn0.52O thin films were achieved on r-plane sapphire substrates by radio-frequency plasma assisted molecular beam epitaxy with two low-Mg-component MgZnO buffer layers. The MgZnO photoresistors exhibit a large dark/photo resistance ratio up to1.7×104with the light intensity of0.61mW/cm2at260nm, which is compareable with the photosensitivity of the visible and IR photoresistors. The spectral response shows a sharp response peak in the solar-blind region with a maximum responsivity of1.5×10-3Ω-1·W-1.
5. Fabrication of SAW filters with high velocity based on ZnO films grown by rf-MBE
The SAW filters were fabricated with a structure of IDTs/ZnO/LT-ZnO/MgO/Al2O3. The SAW propagation velocity is up to5010m/s, which is one of the highest speed reported in the literature of ZnO-based SAW devices on the sapphire substrates.
引文
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