准一维半导体纳米结构中量子输运性质的研究
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摘要
介观体系中的量子输运性质的研究是当前凝聚态物理的重要前沿研究方向。特别是电导量子化和热导量子化现象受到了广大科学工作者的关注,这些成果在纳米尺度电子器件和热量子器件方面具有广阔的应用前景。本文针对具有重要理论意义和应用前景的介观、纳米尺度量子结构中的输运机理开展了一系列的研究,获得了一些有意义的成果:
运用模匹配方法研究了非对称T型磁量子结构的电子输运性质。结果表明,结构因子和磁势垒都能改变电子散射模数,电子输运谱因此变得复杂而丰富,散射区域出现了完全局域态和磁边缘态。在特定的结构参数和磁场强度下,能观测到宽谷、尖峰、共振透射和共振反射等电子输运现象,即可以通过调节磁场大小和结构参数来实现波矢过滤。
研究了双磁垒量子结构中,磁场强度和偏压大小对电子自旋极化输运的影响。结果表明:零偏压下,电子在反平行等强磁垒结构中输运不会产生自旋极化;电子传输的阈值能量随磁场强度或偏置电压的增大而增大;在一定的磁场强度和偏压大小下,比较由半导体InAs和GaAs两类材料构成的量子结构中电子输运自旋极化度,发现它们的电子输运自旋极化度都随入射能量的增大而呈振荡衰减趋势,朗德有效因子高的InAs材料比GaAs的自旋极化度高出一个数量级。运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质。结果表明:零偏压下,电子的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子自旋极化度最大值减小,同时自旋极化度振荡衰减也越来越慢。在偏置电压的作用下,电子自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应。
研究了Neumann边界条件和Dirichlet边界条件下,不连续的纳米结构中的声学声子输运性质的影响。结果表明:两种边界条件下,声学声子输运谱呈不同的输运行为,我们能观察到共振透射和禁止频带,这是由于声子模与模的耦合作用。
研究了含侧面端子的非均匀量子线的声子热耦合效应。这里我们考虑了两种典型的边界条件,即弹性自由和硬壁边界条件。研究结果表明:在应力自由边界条件下,我们能观察到热导量子化现象,而在硬壁边界条件下,不能观察到这一现象。两侧端结构之间的耦合效应对热导的影响随边界条件的不同而不同,随着两侧端结构的距离的增加,热导呈振荡衰减现象。这一结果对热调控器件的设计提供了新的思路。
研究了周期性调控的介电量子线的声学声子输运几率和热导。研究结果表明:周期性的散射导致了一些有趣的物理现象:(1)观察到声子谱的峰谷结构,随周期数的增加,某些深谷发展为禁止频带,而且禁带的宽度可以通过改变结构参数和周期数来控制;(2)热导依赖于周期数和结构参数,而且在周期数较少时,热导随结构参数的变化更明显。
Electronic transport and thermal transport in semiconductor quantum structures are important issues in condensed matter physics and have attracted considerable attention in recent years. Many interesting physical properties have been found in those structures such as quantized electronic conductance and thermal conductance, which are very useful properties in device application. In this thesis we present some detailed theoretical investigations on electronic transport and thermal transport in semiconductor quantum structures. The achievements made in this thesis are summaried as:
We investigate transport properties of electrons through an asymmetric T-shaped magnetic quantum structure with the use of the mode-mathcing technique. The results show that the changes of both structural factors and magnetic field can affect the electronic scattering behavior and result in various patterns of electronic transmission. When different magnetic configurations and structural factors are applied, the transmission exhibits various patterns such as wide valley, sharp peak, resonant reflect, resonant transmission, and so on. Our results show that one may control the transmission property to design interferential quantum devices by adjusting magnetic configurations or structural parameters.
The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper。The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage; (ii) the energy threshold of electronic transmission are increase with the increases of magnetic field or bias voltage; (iii) the comparison of the electron spin polarization degree is made between the electron transport through GaAs and through InAs quantum structure, and find that though the spin polarization degree oscillation decrease with the increase of the incidence energy, the spin polarization degree of InAs is an order of magnitude higher than that of GaAs because of the higher Lande effective factor。
By using the scattering matrix method, the properties of two-dimensional electron gas spin polarized transport through step-magnetic barriers structure at different bias voltage are investigated. The results show that the degree of spin polarization (i) is oscillation reduce if the incidence energy increase at zero bias voltage and (ii) reduce slower and the maximum of spin polarization decreases when the number of steps increase in this structure and (iii) enhance significantly in wider energy region at applied bias voltage, and more distinct spin-filtering properties are shown in the step-magnetic barriers.
We investigate the effect of boundary conditions on acoustic phonon transport in a quantum waveguide with structural defects at low temperatures by using the scattering-matrix method. Here both Neumann and Dirichlet boundary conditions are considered. The results indicate that the transmission coefficients versus reduced phonon frequency is qualitatively different for different of boundary conditions. The stop-frequency gap and the transmission resonance can be observed for certain structural parameters due to mode-mode coupling.
By using the scattering matrix method, we investigate the thermal conductance in a double-stub quantum wire at low temperatures. It is found that the quantum structures exhibit oscillatory decaying thermal conductance with the width between two stubs. When the stress-free boundary condition in used for the structures, thr universal quantized thermal conductance can be clearly observed. As the hard-wall boundary condition is considered, the quantized conductance can not be observed. The coupling effect between two stubs is qualitatively different for the different boundary conditions. This appears to be important for applications in devices.
We investigate acoustic phonon transport and thermal conductance at low temperatures in a quantum wire with rectangle scatters periodically placed in the quantum channel. It is found that the transmission spectra of zero mode exhibits a series of resonant peaks-valleys structures, and the transport valley gradually develop into stop-frequency gap with increasing the number of the period. The number of resonant peaks or valleys between two nearest gaps is just twice as large as the number of the period. The result also indicates that the thermal conductance is sensitive to the number of the period and structural parameters, and the change is more pronounced in the structure with smaller number of period.
运用模匹配方法研究了非对称T型磁量子结构的电子输运性质。结果表明,结构因子和磁势垒都能改变电子散射模数,电子输运谱因此变得复杂而丰富,散射区域出现了完全局域态和磁边缘态。在特定的结构参数和磁场强度下,能观测到宽谷、尖峰、共振透射和共振反射等电子输运现象,即可以通过调节磁场大小和结构参数来实现波矢过滤。
研究了双磁垒量子结构中,磁场强度和偏压大小对电子自旋极化输运的影响。结果表明:零偏压下,电子在反平行等强磁垒结构中输运不会产生自旋极化;电子传输的阈值能量随磁场强度或偏置电压的增大而增大;在一定的磁场强度和偏压大小下,比较由半导体InAs和GaAs两类材料构成的量子结构中电子输运自旋极化度,发现它们的电子输运自旋极化度都随入射能量的增大而呈振荡衰减趋势,朗德有效因子高的InAs材料比GaAs的自旋极化度高出一个数量级。运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质。结果表明:零偏压下,电子的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子自旋极化度最大值减小,同时自旋极化度振荡衰减也越来越慢。在偏置电压的作用下,电子自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应。
研究了Neumann边界条件和Dirichlet边界条件下,不连续的纳米结构中的声学声子输运性质的影响。结果表明:两种边界条件下,声学声子输运谱呈不同的输运行为,我们能观察到共振透射和禁止频带,这是由于声子模与模的耦合作用。
研究了含侧面端子的非均匀量子线的声子热耦合效应。这里我们考虑了两种典型的边界条件,即弹性自由和硬壁边界条件。研究结果表明:在应力自由边界条件下,我们能观察到热导量子化现象,而在硬壁边界条件下,不能观察到这一现象。两侧端结构之间的耦合效应对热导的影响随边界条件的不同而不同,随着两侧端结构的距离的增加,热导呈振荡衰减现象。这一结果对热调控器件的设计提供了新的思路。
研究了周期性调控的介电量子线的声学声子输运几率和热导。研究结果表明:周期性的散射导致了一些有趣的物理现象:(1)观察到声子谱的峰谷结构,随周期数的增加,某些深谷发展为禁止频带,而且禁带的宽度可以通过改变结构参数和周期数来控制;(2)热导依赖于周期数和结构参数,而且在周期数较少时,热导随结构参数的变化更明显。
Electronic transport and thermal transport in semiconductor quantum structures are important issues in condensed matter physics and have attracted considerable attention in recent years. Many interesting physical properties have been found in those structures such as quantized electronic conductance and thermal conductance, which are very useful properties in device application. In this thesis we present some detailed theoretical investigations on electronic transport and thermal transport in semiconductor quantum structures. The achievements made in this thesis are summaried as:
We investigate transport properties of electrons through an asymmetric T-shaped magnetic quantum structure with the use of the mode-mathcing technique. The results show that the changes of both structural factors and magnetic field can affect the electronic scattering behavior and result in various patterns of electronic transmission. When different magnetic configurations and structural factors are applied, the transmission exhibits various patterns such as wide valley, sharp peak, resonant reflect, resonant transmission, and so on. Our results show that one may control the transmission property to design interferential quantum devices by adjusting magnetic configurations or structural parameters.
The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper。The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage; (ii) the energy threshold of electronic transmission are increase with the increases of magnetic field or bias voltage; (iii) the comparison of the electron spin polarization degree is made between the electron transport through GaAs and through InAs quantum structure, and find that though the spin polarization degree oscillation decrease with the increase of the incidence energy, the spin polarization degree of InAs is an order of magnitude higher than that of GaAs because of the higher Lande effective factor。
By using the scattering matrix method, the properties of two-dimensional electron gas spin polarized transport through step-magnetic barriers structure at different bias voltage are investigated. The results show that the degree of spin polarization (i) is oscillation reduce if the incidence energy increase at zero bias voltage and (ii) reduce slower and the maximum of spin polarization decreases when the number of steps increase in this structure and (iii) enhance significantly in wider energy region at applied bias voltage, and more distinct spin-filtering properties are shown in the step-magnetic barriers.
We investigate the effect of boundary conditions on acoustic phonon transport in a quantum waveguide with structural defects at low temperatures by using the scattering-matrix method. Here both Neumann and Dirichlet boundary conditions are considered. The results indicate that the transmission coefficients versus reduced phonon frequency is qualitatively different for different of boundary conditions. The stop-frequency gap and the transmission resonance can be observed for certain structural parameters due to mode-mode coupling.
By using the scattering matrix method, we investigate the thermal conductance in a double-stub quantum wire at low temperatures. It is found that the quantum structures exhibit oscillatory decaying thermal conductance with the width between two stubs. When the stress-free boundary condition in used for the structures, thr universal quantized thermal conductance can be clearly observed. As the hard-wall boundary condition is considered, the quantized conductance can not be observed. The coupling effect between two stubs is qualitatively different for the different boundary conditions. This appears to be important for applications in devices.
We investigate acoustic phonon transport and thermal conductance at low temperatures in a quantum wire with rectangle scatters periodically placed in the quantum channel. It is found that the transmission spectra of zero mode exhibits a series of resonant peaks-valleys structures, and the transport valley gradually develop into stop-frequency gap with increasing the number of the period. The number of resonant peaks or valleys between two nearest gaps is just twice as large as the number of the period. The result also indicates that the thermal conductance is sensitive to the number of the period and structural parameters, and the change is more pronounced in the structure with smaller number of period.
引文
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