纳米ZnO复合薄膜制备与光学特性研究
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摘要
ZnO是重要的Ⅱ-Ⅵ族半导体氧化物,属宽能隙直接带材料,因其激子结合能(60meV)比GaN(25 meV)、ZnSe(22 meV)高,能有效工作于室温(26 meV)及更高温度,而且光增益系数(300 cm~(-1))高于GaN(100 cm~(-1)),使得ZnO迅速成为短波长半导体激光器材料研究的国际热点,相关文献在Nature、Physical Review Letters、Applied Physics Letters等著名刊物上屡见不鲜,例如意大利著名教授Wiersma在Nature上对ZnO随机激光器做了专题评论,美国西北大学的H.Cao等在ZnO半导体粉末的荧光实验中观察到了随机激光辐射。
为了寻求低成本制备高质量ZnO薄膜的方法并进一步探讨其在光电子器件中的应用,本文用TiO_2及SiO_2作为缓冲层,利用电子束蒸发法制备了高质量的ZnO薄膜,成功地解决了ZnO薄膜与基底之间存在的晶格失配及热失配问题,并对其发光特性进行了研究。从理论上采用时域有限差分法(FDTD)分析了随机激光器中环形随机腔的谐振特性,并提出了适合随机激光系统的Maxwell-Bloch方程,研究了随机激光器的阈值及饱和模式数特性。研究发现,在石英玻璃基底上以TiO_2为缓冲层生长的ZnO薄膜,其晶体质量显著提高,实现了强的紫外光(UV)、强的紫光和弱的绿光的共发射;而在Si基底上同样采用TiO_2作为缓冲层则成功制备了非晶态的ZnO薄膜,实现了非晶ZnO薄膜的高质量发光,从而降低了制备工艺要求,节约了生产成本;以非晶SiO_2作为缓冲层,在Si基底上采用保温处理的方法制备了高质量的ZnO薄膜,观察到了稳定单一紫外发光的新现象,使得其在光电子器件,特别是在紫外发光器件及紫外激光器中存在广阔的应用前景;线偏振光在ZnO薄膜背散射方向存在退偏振行为,同时发现其存在最佳退偏振角,等于对应的有效布儒斯特角,为研究无序系统中的多散射行为提供了一定的参考;得到了随机激光器中环形随机腔的构成、形成条件以及模式特点,为随机激光器的设计提供了一定的理论基础;通过时域有限差分法对Maxwell-Bloch方程的求解,得到了随机激光器中光的局域模式和饱和模式数等,为随机激光器的振荡频谱分布研究提供了有价值的参考。
Zinc oxide(ZnO)is an importantⅡ-Ⅵsemiconductor oxide with wide band gap. Its exciton binding energy(60 meV)is larger than that of GaN(25 meV)or ZnSe(22 meV).It is able to work effectively at room temperature(26 meV),and even at higher temperature.Its gain coefficient(300 cm~(-1))is larger than that of GaN(100 cm~(-1)).The properties of ZnO as above stimulate a wide research interest in the study of short wave semiconductor laser material.Papers about ZnO are abounding in famous publications, such as Nature,Physical Review Letters and Applied Physics Letters.Professor Wiersma has token a special topic about ZnO random laser in NatUre.Professor Cao has observed the random lasing of ZnO semiconductor powder at the fluorescence experiment.
In order to find high-quality low-cost ZnO film preparative methods,and further study on the applications of ZnO in optoelectronic devices,high-quality ZnO films have been deposited using TiO_2 and SiO_2 buffer layers by E-beam evaporation.The lattice mismatch and thermal mismatch were decreased by using buffer layer.And the luminescence characteristic of ZnO film was studied in this dissertation.Theoretically,a finite-difference time-domain(FDTD)method is used to study the resonance of loop random cavities of random laser.Maxwell-Bloch equations adaptive to random laser are presented.The threshold and number of saturation mode are studied.The results are as follows:The crystallinity of ZnO film deposited on quartz glass is considerably improved by using a TiO_2 buffer layer.The co-emission of UV,violet and green luminescence is observed from ZnO/TiO_2 film.When the Si was used as substrates,the ZnO films are amorphous.And the high-quality luminescence of amorphous ZnO film was observed. ZnO films have been deposited on Si substrates using amorphous SiO_2 as buffer layers, and thermal retardation was used to increase the optical quality of the ZnO film.PL spectroscopy showed that UV luminescence at only 374 nm was firstly observed.There are broad prospects for applications of ZnO in optoelectronic devices,especially in the UV light emitting devices and UV laser.The depolarization behavior of backscattered linearly polarized light from ZnO thin film was investigated experimentally.There is an optimal incident angle for depolarization of linearly polarized light with different wavelength,which is equal to their each effective Brewster's angle,respectively.It provides some references for studying the multi-scattering in disorder media.A finite-difference time-domain(FDTD)method is used to study the structure,consition of formation and mode characteristic of loop random cavities of random laser.It provides some theoretical basis for the design of random laser.A finite-difference time-domain method is used to solve Maxwell-Bloch equations.The localized modes and number of lasing modes are obtained.It provides some valuable references for studying the distribution of the spectrum of random laser.
为了寻求低成本制备高质量ZnO薄膜的方法并进一步探讨其在光电子器件中的应用,本文用TiO_2及SiO_2作为缓冲层,利用电子束蒸发法制备了高质量的ZnO薄膜,成功地解决了ZnO薄膜与基底之间存在的晶格失配及热失配问题,并对其发光特性进行了研究。从理论上采用时域有限差分法(FDTD)分析了随机激光器中环形随机腔的谐振特性,并提出了适合随机激光系统的Maxwell-Bloch方程,研究了随机激光器的阈值及饱和模式数特性。研究发现,在石英玻璃基底上以TiO_2为缓冲层生长的ZnO薄膜,其晶体质量显著提高,实现了强的紫外光(UV)、强的紫光和弱的绿光的共发射;而在Si基底上同样采用TiO_2作为缓冲层则成功制备了非晶态的ZnO薄膜,实现了非晶ZnO薄膜的高质量发光,从而降低了制备工艺要求,节约了生产成本;以非晶SiO_2作为缓冲层,在Si基底上采用保温处理的方法制备了高质量的ZnO薄膜,观察到了稳定单一紫外发光的新现象,使得其在光电子器件,特别是在紫外发光器件及紫外激光器中存在广阔的应用前景;线偏振光在ZnO薄膜背散射方向存在退偏振行为,同时发现其存在最佳退偏振角,等于对应的有效布儒斯特角,为研究无序系统中的多散射行为提供了一定的参考;得到了随机激光器中环形随机腔的构成、形成条件以及模式特点,为随机激光器的设计提供了一定的理论基础;通过时域有限差分法对Maxwell-Bloch方程的求解,得到了随机激光器中光的局域模式和饱和模式数等,为随机激光器的振荡频谱分布研究提供了有价值的参考。
Zinc oxide(ZnO)is an importantⅡ-Ⅵsemiconductor oxide with wide band gap. Its exciton binding energy(60 meV)is larger than that of GaN(25 meV)or ZnSe(22 meV).It is able to work effectively at room temperature(26 meV),and even at higher temperature.Its gain coefficient(300 cm~(-1))is larger than that of GaN(100 cm~(-1)).The properties of ZnO as above stimulate a wide research interest in the study of short wave semiconductor laser material.Papers about ZnO are abounding in famous publications, such as Nature,Physical Review Letters and Applied Physics Letters.Professor Wiersma has token a special topic about ZnO random laser in NatUre.Professor Cao has observed the random lasing of ZnO semiconductor powder at the fluorescence experiment.
In order to find high-quality low-cost ZnO film preparative methods,and further study on the applications of ZnO in optoelectronic devices,high-quality ZnO films have been deposited using TiO_2 and SiO_2 buffer layers by E-beam evaporation.The lattice mismatch and thermal mismatch were decreased by using buffer layer.And the luminescence characteristic of ZnO film was studied in this dissertation.Theoretically,a finite-difference time-domain(FDTD)method is used to study the resonance of loop random cavities of random laser.Maxwell-Bloch equations adaptive to random laser are presented.The threshold and number of saturation mode are studied.The results are as follows:The crystallinity of ZnO film deposited on quartz glass is considerably improved by using a TiO_2 buffer layer.The co-emission of UV,violet and green luminescence is observed from ZnO/TiO_2 film.When the Si was used as substrates,the ZnO films are amorphous.And the high-quality luminescence of amorphous ZnO film was observed. ZnO films have been deposited on Si substrates using amorphous SiO_2 as buffer layers, and thermal retardation was used to increase the optical quality of the ZnO film.PL spectroscopy showed that UV luminescence at only 374 nm was firstly observed.There are broad prospects for applications of ZnO in optoelectronic devices,especially in the UV light emitting devices and UV laser.The depolarization behavior of backscattered linearly polarized light from ZnO thin film was investigated experimentally.There is an optimal incident angle for depolarization of linearly polarized light with different wavelength,which is equal to their each effective Brewster's angle,respectively.It provides some references for studying the multi-scattering in disorder media.A finite-difference time-domain(FDTD)method is used to study the structure,consition of formation and mode characteristic of loop random cavities of random laser.It provides some theoretical basis for the design of random laser.A finite-difference time-domain method is used to solve Maxwell-Bloch equations.The localized modes and number of lasing modes are obtained.It provides some valuable references for studying the distribution of the spectrum of random laser.
引文
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