适用于SiC薄膜生长的RTCVD装置及工艺探索
摘要
本文主要探索适用于碳化硅薄膜生长的RTCVD装置，并对生长工艺进行了初步探索。
主要工作包括：
1．针对本课题要求的RTCVD设备的反应腔大、工作温度高和升温速度快的特点，首先对设备升温条件进行能量计算；接着从反射腔材料选择和形状设计等方面出发，利用计算机模拟最终设计出为每根灯管分别反射辐射能的圆柱面形反射罩。通过制作反射罩进行加热试验，最终用14根2000w的碘钨灯在1分钟内将样品加热到1200℃。
2．针对以前气路堵塞的问题设计并制作了气路系统，使氢气在反应后能够通过阀门控制对气路进行冲洗。
3．设计并制作了尾气处理装置，使设备排出的尾气能够经氮气稀释和碱水清洗而除掉其中的SiH_4等易燃有害气体。
4．使用RTCVD装置对生长β-SiC薄膜的工艺进行了初步探索。
In this thesis, the RTCVD equipment that suitable for the growth of SiC thin film was studied, and the SiC thin film growth process was primarily explored.
We primarily do theses works:
First, for the RTCVD equipment that we required has a big chamber, high working temperature and fast temperature ramp rate, the energy that required for the high temperature working conditions was computed; then the reflector material and the shape of the reflector were chosen. Through computer simulation we designed a reflector that can reflect the energy of each lamp individually through each half-cylindrical-face. Through experiments, the susceptor can be heated to a high temperature of 1200癈 within 1 minute by 14 W-halogen lamps of 2000W each at last.
Second, on account of the block of gas channel we designed a gas channel system, through which the hydrogen can flush the gas channel after the reaction by the control of valves.
Third, we designed a waste gas disposing equipment, through which the danger gases such as SiH4 can be get rid of by the nitrogen diluting and the rinsing of alkali solution.
Forth, the growth process of SiC thin film was primarily explored by using of RTCVD equipment.
主要工作包括：
1．针对本课题要求的RTCVD设备的反应腔大、工作温度高和升温速度快的特点，首先对设备升温条件进行能量计算；接着从反射腔材料选择和形状设计等方面出发，利用计算机模拟最终设计出为每根灯管分别反射辐射能的圆柱面形反射罩。通过制作反射罩进行加热试验，最终用14根2000w的碘钨灯在1分钟内将样品加热到1200℃。
2．针对以前气路堵塞的问题设计并制作了气路系统，使氢气在反应后能够通过阀门控制对气路进行冲洗。
3．设计并制作了尾气处理装置，使设备排出的尾气能够经氮气稀释和碱水清洗而除掉其中的SiH_4等易燃有害气体。
4．使用RTCVD装置对生长β-SiC薄膜的工艺进行了初步探索。
In this thesis, the RTCVD equipment that suitable for the growth of SiC thin film was studied, and the SiC thin film growth process was primarily explored.
We primarily do theses works:
First, for the RTCVD equipment that we required has a big chamber, high working temperature and fast temperature ramp rate, the energy that required for the high temperature working conditions was computed; then the reflector material and the shape of the reflector were chosen. Through computer simulation we designed a reflector that can reflect the energy of each lamp individually through each half-cylindrical-face. Through experiments, the susceptor can be heated to a high temperature of 1200癈 within 1 minute by 14 W-halogen lamps of 2000W each at last.
Second, on account of the block of gas channel we designed a gas channel system, through which the hydrogen can flush the gas channel after the reaction by the control of valves.
Third, we designed a waste gas disposing equipment, through which the danger gases such as SiH4 can be get rid of by the nitrogen diluting and the rinsing of alkali solution.
Forth, the growth process of SiC thin film was primarily explored by using of RTCVD equipment.
引文
01．李乃平，《微电子器件工艺》，华中理工大学出版社，1995年8月
02．郝跃，彭军，杨银堂，《碳化硅宽带隙半导体技术》，科学出版社，2000年5月
03．陈治明，王建农，《半导体器件的材料物理学基础》，科学出版社，1999年5月
04．Stsephen A．Campbell 著，曾莹，严利人，王纪民等译，《微电子制造科学原理与工程技术(第二版)》，电子工业出版社，2003年1月
05. A. J. Steckl and J.P. Li, Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon, Thin Solid Films, 216 (1992) 149-154.
06. A. J. Steckl and. J.P. Li, Epitaxial growth of β-SiC on Si by RTCVD with C_3H_8 and SiH_4, IEEE Trans. Electron. Devices, 39(1992) 64-74.
07. Jun-Dar Hwang, Yean-Kuen Fang, You-Joung Song and Dun-Nian Yaung, Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal. Chemical Vapor Deposition, Jpn. J. Appl. Phys, 34(1995) 1447-1450.
08. A. J. Steckl and J.P. Li, Uniform β-SiC thin-film growth on Si by low pressure rapid thermal, chemical vapor deposition, Appl. Phys. Lett. 60(1992) 2107-2109.
09. C. Lee and G. Chizinsky, "Rapid Thermal Processing Using a Continuous Heat Source", Solid State Technol. 32(1):43 (1989)
10. C. Lee, U.S. Patent 4857689(1989)
11. W. DeHart, Microelectronic Man, Technol. 14(7):44 (1991)
12. P.P. Apte, S. Wood, L. Booth, K.C. Saraswat, and M. M. Moslehi, Materials Sci Symp. Proc, 224:209(1991)
13. M.M.Moslehi, J.Kuehne, R. Yeakley, L. Velo, H. Naim, B. Dostalik,
D. Yin and C. J.Davis, "In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing", Materials Sci. Symp.Proc. 224:143 (1991).
14．《半导体器件工艺》，上海科学技术文献出版社，1984年1月
15. H. Nagasawa and Y. Yamaguchi, "Atomic level epitaxy of SC-SiC by low pressure vapor deposition with alternating gas supply", ThinSolid Films. 225 (1993) 230-234
16. Koji Takahashi, Shigehiro Nishino and Junji. Saraie, "Effect of acceptor impurity addition in low temperature growth of 3C-SiC", Journal of Crystal Growth, 115(1991) 617-622.
17. Y. Hattori, T. Suzuki, T. Murata, T. Yabumi, K. Yasuda and M. Saji, "Growth mechanism of 3C-SiC layers at a low temperature region in low-pressure CVD", Journal of Crystal Growth 115(1991) 607-611.
18. Hiroyuki Nagasawa and Yoh-ichi Yamaguchi, "Suppression of etch pit and hillock formation on carbonization of Si substrate and low temperature growth of SiC", Journal of Crystal Growth 115(1991)612-616.
19．徐怀平，《远红外加热炉》，河北人民出版社，1982年4月
20．徐怀平，《远红外加热技术》，河北人民出版社，1979年2月
21．易新建，《太阳电池原理与设计》，华中理工大学出版社，1989年1月
22．桑野幸德，《太阳电池及其应用》，科学出版社，1990年2月
23．安其霖，曹国琛，李国欣，刘宝元和张忠奎，《太阳电池原理与工艺》，上海科学技术出版社，1984年10月
24. Martin A. Creen, Jianhua Zhao, Aihua Wang and Stuart R. Wenham, "Very High Efficiency Silicon Solar Cells-Science and Technology", IEEE TRANSACTIONS ON ELECTRON DEVICES, 46:10
(1999).
25. Marek Lipinski, Piotr Panek and Halina Czternastek, "Application of Porous Silicon for Silicon Solar cell Technology", 25th International Conference and Exhibition IMAPS-Poland 2001
26. Renat R. Bilyalov, Lievon Stalmans, Luigi Schirone, and Claude Levy-Clement, "Use of Porous Silicon Antireflection Coating in Multicrytalline Silicon Solat Cell Processing", IEEE TRANSACTIONS ON ELECTRON DEVICES, 46:10 (1999).
27. Z.N. Adamian, A.R. Hakhoyan, V.M. Aroutiounian, R.S. Barseghian and K. Touryan, "Investisations of solar cells with porous silicon as antireflection layer", Solar Energy Materials & Solar Cells 64(2000) 347-351
28. I. Zubel, M. Kramkowska and P. Msjcher, "Modification of Silicon Anisotropic Etching by Different Alcohol Additions Introduced to KOH Solutions", 25th International Conference and Exhibition IMAPS-Poland 2001
29. Jianhua Zhao, Aihua Wang, Patrick Campbell and Martin A. Green, "A 19.8% Efficient Honeycomb Multicrystalline Silicon Solar Cell with Improved Light Trapping", IEEE TRANSACTION ON ELECTRON DEVICES 46:10 (1999).
30. P. Panek, M. Lipinski and h. Czternastek, "SnO_2 on Porous Silicon as Antireflection Coating in Solar CeLLs" 25th International Conference and Exhibition IMAPS-Poland 2001
31. C.H. Wu, et al, "Epitaxial. growth of single crystalline 3C-SiC on Si from hexamethyldisilane and void formation mechanism", Inst. Phys. Conf. Set. 142(1995)97-100
32. Y. H. Seo, et al, "Epitaxial Growth of 3C-SiC on Si wafer from
tetramethylsilane by rapid thermal chemical vapor deposition: growth mechanism", Inst. Phys. Conf. Ser. 142(1996)
33. V. Cimalla, et al, "Crowth of β-SiC layers by carbonizstion of Si surfaces by rapid thermal processing" Materials Science and Engineering 29(1995) 170-175
34. H. Shimizu, "Low temperature and large-area deposition of 3C-SiC on Si by AC plasma-assisted CVD", Inst. Phys. Conf. Ser. 142(1995)97-100
35．雷天民，新型电力电子材料-SiC晶体薄膜的制备及性能分析，博士论文
02．郝跃，彭军，杨银堂，《碳化硅宽带隙半导体技术》，科学出版社，2000年5月
03．陈治明，王建农，《半导体器件的材料物理学基础》，科学出版社，1999年5月
04．Stsephen A．Campbell 著，曾莹，严利人，王纪民等译，《微电子制造科学原理与工程技术(第二版)》，电子工业出版社，2003年1月
05. A. J. Steckl and J.P. Li, Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon, Thin Solid Films, 216 (1992) 149-154.
06. A. J. Steckl and. J.P. Li, Epitaxial growth of β-SiC on Si by RTCVD with C_3H_8 and SiH_4, IEEE Trans. Electron. Devices, 39(1992) 64-74.
07. Jun-Dar Hwang, Yean-Kuen Fang, You-Joung Song and Dun-Nian Yaung, Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal. Chemical Vapor Deposition, Jpn. J. Appl. Phys, 34(1995) 1447-1450.
08. A. J. Steckl and J.P. Li, Uniform β-SiC thin-film growth on Si by low pressure rapid thermal, chemical vapor deposition, Appl. Phys. Lett. 60(1992) 2107-2109.
09. C. Lee and G. Chizinsky, "Rapid Thermal Processing Using a Continuous Heat Source", Solid State Technol. 32(1):43 (1989)
10. C. Lee, U.S. Patent 4857689(1989)
11. W. DeHart, Microelectronic Man, Technol. 14(7):44 (1991)
12. P.P. Apte, S. Wood, L. Booth, K.C. Saraswat, and M. M. Moslehi, Materials Sci Symp. Proc, 224:209(1991)
13. M.M.Moslehi, J.Kuehne, R. Yeakley, L. Velo, H. Naim, B. Dostalik,
D. Yin and C. J.Davis, "In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing", Materials Sci. Symp.Proc. 224:143 (1991).
14．《半导体器件工艺》，上海科学技术文献出版社，1984年1月
15. H. Nagasawa and Y. Yamaguchi, "Atomic level epitaxy of SC-SiC by low pressure vapor deposition with alternating gas supply", ThinSolid Films. 225 (1993) 230-234
16. Koji Takahashi, Shigehiro Nishino and Junji. Saraie, "Effect of acceptor impurity addition in low temperature growth of 3C-SiC", Journal of Crystal Growth, 115(1991) 617-622.
17. Y. Hattori, T. Suzuki, T. Murata, T. Yabumi, K. Yasuda and M. Saji, "Growth mechanism of 3C-SiC layers at a low temperature region in low-pressure CVD", Journal of Crystal Growth 115(1991) 607-611.
18. Hiroyuki Nagasawa and Yoh-ichi Yamaguchi, "Suppression of etch pit and hillock formation on carbonization of Si substrate and low temperature growth of SiC", Journal of Crystal Growth 115(1991)612-616.
19．徐怀平，《远红外加热炉》，河北人民出版社，1982年4月
20．徐怀平，《远红外加热技术》，河北人民出版社，1979年2月
21．易新建，《太阳电池原理与设计》，华中理工大学出版社，1989年1月
22．桑野幸德，《太阳电池及其应用》，科学出版社，1990年2月
23．安其霖，曹国琛，李国欣，刘宝元和张忠奎，《太阳电池原理与工艺》，上海科学技术出版社，1984年10月
24. Martin A. Creen, Jianhua Zhao, Aihua Wang and Stuart R. Wenham, "Very High Efficiency Silicon Solar Cells-Science and Technology", IEEE TRANSACTIONS ON ELECTRON DEVICES, 46:10
(1999).
25. Marek Lipinski, Piotr Panek and Halina Czternastek, "Application of Porous Silicon for Silicon Solar cell Technology", 25th International Conference and Exhibition IMAPS-Poland 2001
26. Renat R. Bilyalov, Lievon Stalmans, Luigi Schirone, and Claude Levy-Clement, "Use of Porous Silicon Antireflection Coating in Multicrytalline Silicon Solat Cell Processing", IEEE TRANSACTIONS ON ELECTRON DEVICES, 46:10 (1999).
27. Z.N. Adamian, A.R. Hakhoyan, V.M. Aroutiounian, R.S. Barseghian and K. Touryan, "Investisations of solar cells with porous silicon as antireflection layer", Solar Energy Materials & Solar Cells 64(2000) 347-351
28. I. Zubel, M. Kramkowska and P. Msjcher, "Modification of Silicon Anisotropic Etching by Different Alcohol Additions Introduced to KOH Solutions", 25th International Conference and Exhibition IMAPS-Poland 2001
29. Jianhua Zhao, Aihua Wang, Patrick Campbell and Martin A. Green, "A 19.8% Efficient Honeycomb Multicrystalline Silicon Solar Cell with Improved Light Trapping", IEEE TRANSACTION ON ELECTRON DEVICES 46:10 (1999).
30. P. Panek, M. Lipinski and h. Czternastek, "SnO_2 on Porous Silicon as Antireflection Coating in Solar CeLLs" 25th International Conference and Exhibition IMAPS-Poland 2001
31. C.H. Wu, et al, "Epitaxial. growth of single crystalline 3C-SiC on Si from hexamethyldisilane and void formation mechanism", Inst. Phys. Conf. Set. 142(1995)97-100
32. Y. H. Seo, et al, "Epitaxial Growth of 3C-SiC on Si wafer from
tetramethylsilane by rapid thermal chemical vapor deposition: growth mechanism", Inst. Phys. Conf. Ser. 142(1996)
33. V. Cimalla, et al, "Crowth of β-SiC layers by carbonizstion of Si surfaces by rapid thermal processing" Materials Science and Engineering 29(1995) 170-175
34. H. Shimizu, "Low temperature and large-area deposition of 3C-SiC on Si by AC plasma-assisted CVD", Inst. Phys. Conf. Ser. 142(1995)97-100
35．雷天民，新型电力电子材料-SiC晶体薄膜的制备及性能分析，博士论文