ZnO薄膜的制备与性能研究
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摘要
ZnO薄膜是一种具优良的压电、光电、气敏、压敏等性质的材料，在透明导体、发光元件、太阳能电池窗口材料、光波导器、单色场发射显示器材料、高频压电转换、表面声波元件、微传感器以及低压压敏电阻器等方面具有广泛的用途。ZnO薄膜的制备方法多样，各具优缺点，而薄膜性质的差异不仅取决于不同的掺杂组分，并与制备工艺紧密相关。本文研究采用两种不同的方法制备ZnO薄膜：一是采用射频磁控溅射制备ZnO薄膜；二是采用离子束溅射锌膜然后在氧气氛炉中退火氧化制备ZnO薄膜。
第一章介绍了ZnO薄膜的晶体结构、制备方法、性能以及关于ZnO薄膜的国内外的研究进展概况。
第二章研究射频磁控溅射和离子束溅射制备ZnO薄膜。内容包括射频磁控溅射的基本原理和离子束溅射的基本原理，射频磁控溅射ZnO薄膜制备的基本过程，离子束溅射制备ZnO薄膜的过程。
第三章研究射频磁控溅射工艺参数以及退火工艺对ZnO薄膜结构、形貌的影响。工艺参数方面主要是通过对沉积时间分别为30min和60min的ZnO薄膜的结构与形貌进行对比分析，发现随着溅射时间的增加，薄膜的结晶性得到改善，颗粒尺寸增加，薄膜表面粗糙度降低，其次退火工艺方面研究了未退火的ZnO薄膜和经600℃退火的ZnO薄膜结构与形貌上的区别，发现经退火处理的ZnO薄膜结构致密，颗粒尺寸均匀化，表面粗糙度降低。
第四章研究了采用离子束溅射法制备ZnO薄膜。研究了工艺参数，退火温度，保温时间，衬底，单枪溅射以及二次溅射处理对ZnO薄膜结构、形貌、导电性的影响。工艺参数方面主要对溅射时间分别为30，60，120min的ZnO薄膜结构与形貌进行分析，发现随着溅射时间增加，薄膜的结晶性得到改善，颗粒尺寸变大，表面粗糙度下降；分析了在石英玻璃衬底上的ZnO薄膜在不同温度下退火的结晶性，发现随着退火温度的改变，薄膜的生长取向有所改变；退火工艺中保温时间增加导致薄膜的颗粒尺寸变大，薄膜表面粗糙度下降；不同的衬底导致薄膜的生长情况也不一样；通过对比单枪溅射和二次溅射制备的ZnO薄膜的结构与形貌，发现二次溅射后的薄膜XRD峰强度减弱，但是二次溅射后的ZnO薄膜的表面粗糙度降低。
第五章通过对比射频和离子束溅射两种方法制备的ZnO薄膜的结构，表面形貌以及导电性，发现射频磁控溅射制备的ZnO薄膜在取向性，表面粗糙度以及电阻率方面的表现优于离子束溅射制备的ZnO薄膜。
ZnO thin films are the materials with many excellent properties such as piezoelectricity, conductivity, optical absorption and emission, gas-sensitivity,and highly nolinear voltage-current characteristics. They have a wide variety of applications such as transparent conductors, luminescence diode, window materials for solar cells, optical wave guides, phosphor for monochrome field emission displays, piezoelectric transducers in the GHz range, surface acoustic wave devices, micro-sensors and micro-actuators, and low-voltage varistors.There are many methods for the preparation of ZnO thin films, and each has its advantages and disadvantages. The properties of ZnO thin films depend on the dopants and the preparating conditions. This paper reviews the prepartion and properties of ZnO thin films by two different methods: One is that Zn film was first prepared by ion beam sputtering and then annealed in O_2. Another is that ZnO was prepared by RF magnetron sputtering . The structures , morphologies , and electrical resistivities of the ZnO films prepared by two methods were investigated and compared.
In chapter 1, we briefly review crystalline structure, all kinds of preparating methods , properties , the potential applications and progress about ZnO thin films .
In chapter 2 we studied the preparations of ZnO thin films by RF magnetron sputtering and ion beam sputtering . The major content included the theory of RF magnetron sputtering and ion beam sputtering, processing of ZnO thin films preparations by RF sputtering and ion beam sputtering.
In chapter 3, we discussed the influence factors including sputtering time and annealing treatment on structures and morphologies of ZnO films.The results indicated that the structure and roughness average of these samples were impoved with the sputtering time added, annealing treatment also improved the structure and roughness average.
In chapter 4 , We also studied the influence including the sputtering time , differern substrates, ion beam sputtering and second sputtering , annealing temperature, heating time on structure , morphologies, electric properties of ZnO thin films by ion beam sputtering. The structure and roughness average of films were improved with sputtering time and heating time added. The structure and morphologies of films treated by ion sputtering and second sputtering variated . Through second sputtering treatment ,the particles size turned great and roughness average descended. Differernt substrates had different influence on structuer and morophologies of films.
In chappter 5, ZnO films were prepared by IBD(ion beamsputtering depostion)and RF magnetron sputtering. Comparea with RF magnetron method , ZnO films prepared by IBD had a littery growth oriention ,its average surface roughness average is bigger and its electrical resistivity is higher too.
第一章介绍了ZnO薄膜的晶体结构、制备方法、性能以及关于ZnO薄膜的国内外的研究进展概况。
第二章研究射频磁控溅射和离子束溅射制备ZnO薄膜。内容包括射频磁控溅射的基本原理和离子束溅射的基本原理，射频磁控溅射ZnO薄膜制备的基本过程，离子束溅射制备ZnO薄膜的过程。
第三章研究射频磁控溅射工艺参数以及退火工艺对ZnO薄膜结构、形貌的影响。工艺参数方面主要是通过对沉积时间分别为30min和60min的ZnO薄膜的结构与形貌进行对比分析，发现随着溅射时间的增加，薄膜的结晶性得到改善，颗粒尺寸增加，薄膜表面粗糙度降低，其次退火工艺方面研究了未退火的ZnO薄膜和经600℃退火的ZnO薄膜结构与形貌上的区别，发现经退火处理的ZnO薄膜结构致密，颗粒尺寸均匀化，表面粗糙度降低。
第四章研究了采用离子束溅射法制备ZnO薄膜。研究了工艺参数，退火温度，保温时间，衬底，单枪溅射以及二次溅射处理对ZnO薄膜结构、形貌、导电性的影响。工艺参数方面主要对溅射时间分别为30，60，120min的ZnO薄膜结构与形貌进行分析，发现随着溅射时间增加，薄膜的结晶性得到改善，颗粒尺寸变大，表面粗糙度下降；分析了在石英玻璃衬底上的ZnO薄膜在不同温度下退火的结晶性，发现随着退火温度的改变，薄膜的生长取向有所改变；退火工艺中保温时间增加导致薄膜的颗粒尺寸变大，薄膜表面粗糙度下降；不同的衬底导致薄膜的生长情况也不一样；通过对比单枪溅射和二次溅射制备的ZnO薄膜的结构与形貌，发现二次溅射后的薄膜XRD峰强度减弱，但是二次溅射后的ZnO薄膜的表面粗糙度降低。
第五章通过对比射频和离子束溅射两种方法制备的ZnO薄膜的结构，表面形貌以及导电性，发现射频磁控溅射制备的ZnO薄膜在取向性，表面粗糙度以及电阻率方面的表现优于离子束溅射制备的ZnO薄膜。
ZnO thin films are the materials with many excellent properties such as piezoelectricity, conductivity, optical absorption and emission, gas-sensitivity,and highly nolinear voltage-current characteristics. They have a wide variety of applications such as transparent conductors, luminescence diode, window materials for solar cells, optical wave guides, phosphor for monochrome field emission displays, piezoelectric transducers in the GHz range, surface acoustic wave devices, micro-sensors and micro-actuators, and low-voltage varistors.There are many methods for the preparation of ZnO thin films, and each has its advantages and disadvantages. The properties of ZnO thin films depend on the dopants and the preparating conditions. This paper reviews the prepartion and properties of ZnO thin films by two different methods: One is that Zn film was first prepared by ion beam sputtering and then annealed in O_2. Another is that ZnO was prepared by RF magnetron sputtering . The structures , morphologies , and electrical resistivities of the ZnO films prepared by two methods were investigated and compared.
In chapter 1, we briefly review crystalline structure, all kinds of preparating methods , properties , the potential applications and progress about ZnO thin films .
In chapter 2 we studied the preparations of ZnO thin films by RF magnetron sputtering and ion beam sputtering . The major content included the theory of RF magnetron sputtering and ion beam sputtering, processing of ZnO thin films preparations by RF sputtering and ion beam sputtering.
In chapter 3, we discussed the influence factors including sputtering time and annealing treatment on structures and morphologies of ZnO films.The results indicated that the structure and roughness average of these samples were impoved with the sputtering time added, annealing treatment also improved the structure and roughness average.
In chapter 4 , We also studied the influence including the sputtering time , differern substrates, ion beam sputtering and second sputtering , annealing temperature, heating time on structure , morphologies, electric properties of ZnO thin films by ion beam sputtering. The structure and roughness average of films were improved with sputtering time and heating time added. The structure and morphologies of films treated by ion sputtering and second sputtering variated . Through second sputtering treatment ,the particles size turned great and roughness average descended. Differernt substrates had different influence on structuer and morophologies of films.
In chappter 5, ZnO films were prepared by IBD(ion beamsputtering depostion)and RF magnetron sputtering. Comparea with RF magnetron method , ZnO films prepared by IBD had a littery growth oriention ,its average surface roughness average is bigger and its electrical resistivity is higher too.
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