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玻璃基SnO_2透明导电薄膜及低辐射性能研究
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摘要
氟或锑掺杂的氧化锡低辐射涂层玻璃被认为是最经济实用的建筑节能玻璃材料。自1985年英国皮尔金顿公司制造出第一块节能玻璃以来,各国均在低辐射玻璃领域进行了大量的研究,已经成功完善了磁控溅射法制备低辐射玻璃涂层的工艺,然而采用经济实用的喷雾热分解工艺制备低辐射玻璃能够极大地降低生产成本,在今后低辐射玻璃中低端产品领域将占据巨大的市场,因此,本课题着重于采用喷雾热分解法制备大面积低辐射玻璃涂层的研究,以期制备出综合光电性能优良的低辐射玻璃产品。
     本课题在前期研究工作的基础上,进行了深入的理论探索,及产业化小试阶段初步尝试,具体工作如下:
     1、探索氧化锡喷涂液的配制方法,成功配制出了性能优良的氟锑均掺杂的氧化锡喷涂液,利用FT-IR红外分光光度计、PHS-2F数字pH计等仪器对在配制过程中主要阶段的氧化锡喷涂液进行了红外光谱测试分析及pH值测定,研究其化学反应机理。
     2、在生产线上对氟锑掺杂的氧化锡低辐射涂层玻璃制备过程中的各项工艺参数进行了探索,得出在生产线上的最佳制备工艺为:沉积温度700℃、玻璃相对移动速率6.93cm/s、预先喷涂Si02衬底和采用两次喷涂成型的方法。已能成功制备出薄膜的部分部位综合光电性能优良的低辐射玻璃,该部位方阻为23Ω/(?),半球辐射率为0.23,平均可见光透过率达到69%。
     3、为节省成本、提高生产效率,对喷涂液进行改进,在实验室条件下成功制备出综合光电性能优良的氟掺杂的氧化锡薄膜,平均可见光透过率高达80%,半球辐射率低达0.11,说明改进后的喷涂液性能更优于改进前的喷涂液。利用XRD、SEM等仪器对氧化锡低辐射玻璃样品进行了微观结构和性能的测试分析,结果表明:制备的氟掺杂氧化锡薄膜为金红石结构的多晶体,具有单一的氧化锡四方相结构,品粒大小均匀、组织致密,缺陷较少。
The F or Sb doped tin dioxide for low-emissivity glass is one of the most economic and practical building materials. Since the British company Pilkington produced the first low-emissivity glass in 1985, many states have studied the low-emissivity glasses and have successfully improved the magnetron sputtering process. However, the use of economic and practical preparation of spray pyrolysis process can greatly reduce the cost of preparation, and its products will account for a huge market in the field of low-end products for the future. Then this paper focuses on the preparation of large-scale Low-E glass by spray pyrolysis, with a view to the integrated optical and conductive performance of Low-E glass products.
     In preliminary studies of this topic, the basis of a thorough theoretical exploration have been researched and the small trial phase in the industrialization of the initial attempt has been conducted. Concrete work is as follows.
     1. The preparation methods of tin oxide spraying liquid have been explored and the F-Sb doped tin oxide spraying liquid with excellent performance has been prepared successfully. FT-IR and pH value of tin oxide spraying liquid in the preparation of the main stage have been tested by the IR spectra and digital pH value meter, respectively. The chemical reaction mechanism has been explored.
     2. The process parameters in the preparation of F-Sb doped tin dioxide for low-emissivity glasses has been studied on the production line and as the result the optimized preparation process has been obtained:700℃deposition temperature,6.93cm/s relative movement of the rate of glass, SiO2 underlay and two-times spray forming method. The excellent integrated optical and electrical performance of low-emissivity glasses have been obtained by this method, which sheet resistance, hemisphere emissivity and the average transmittance in visible region of the sample had reached 23Ω/□,0.23 and 69%respectively.
     3. In order to save costs and improve productivity, the spraying liquid has been improved. Then the F doped tin dioxide film with excellent property has been prepared, which hemisphere emissivity and the average transmittance in visible region of the sample had reached 0.25 and 80% respectively. All of these have indicated that the improved spray liquid was better than the spraying liquid. The micro-properties of the F doped tin dioxide samples were investigated by XRD, SEM, and so on. The results showed that the film which had uniform crystal grains and compact structure with fewer defects was polycrystal with the tetragonal rutile structure.
引文
[1]杜震宇.低辐射玻璃——21 世纪节能环保玻璃[J].玻璃,2002,5:27-30.
    [2]艾堪奇.低辐射玻璃[J].中国建材,2000,4:22-23.
    [3]郁文红,杨昭.低辐射玻璃的节能性能分析[J].节能,2005,2:32-34.
    [4]龚建华,张浙军.浅谈低辐射玻璃[J].真空与低温,2001,7(2):110-113.
    [5]刘岩,张若京,王占山.单片低辐射玻璃谱带模型及其数值模拟[J].建筑材料学报,2007,10(4):452-458.
    [6]孙永泰.低辐射玻璃[J].能源技术,2003,24(2):61-62.
    [7]负英伟,吴香国,范丰丽.我国建筑节能现状分析及对策[J].重庆科学学院学报(自然科学版),2006,8(1):62-65.
    [8]李蕾等.居住建筑节能评价体系的探讨[J].中国住宅设施,2006,7:50-52.
    [9]李明.深圳胜强公司低辐射玻璃项目的投融资策划与经济评价[D].西安:西安交通大学,2006:11-14.
    [10]邓力,徐美君.低辐射玻璃生产应用及市场[J].玻璃与搪瓷,2003,31(1):56-59.
    [11]涂逢祥,王庆一.建筑节能研究报告[C],建筑节能.北京:中国建筑工业出版社,2004:11-32.
    [12]江亿.我国建筑能耗趋势与节能重点[J].建设科技,2006,7:11-13.
    [13]江亿.我国建筑能耗状况及建筑节能工作中的问题[J].中华建设,2006,2:12-18.
    [14]贺成龙,曹萍.基于CIMS环境的建筑节能集成管理研究[J].建筑经济,2006,11:84-87.
    [15]王荣玲.谈建筑节能在住宅设计中的应用[J].广东科技,2006,3:94-97.
    [16]刘海涛.建筑科技与建筑节能[J].甘肃科技,2006,1:154-158.
    [17]A.S.Ryzhikov, R.B.Vasiliev, M.N.Rumyantseva, L.I.Ryabova, GA.Dosovitsky, A.M.Gilmutdinov, V.F.Kozlovsky, A.M.Gaskov. Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering[J]. Materials Science and Engineering B, 2002,96(3):268-274.
    [18]A.P.Rizzato, C.V.Santilli, and S.H. Pulcinelli. Characterization of Tin Oxide Based Sol-Gel Coatings on Borosilicate Glasses by X-Ray Reflectivity[J]. Journal of Sol-Gel Science and Technology,2000, 19(2):811-816.
    [19]Ja'nos Szanyi. The origin of haze in CVD tin oxide thin films[J]. Applied Surface Science,2002, 185(3-4):161-171.
    [201 E.Elangovan, K.Ramamurthi. A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films[J]. Applied Surface Science,2005,249(4):183-196.
    [21]王承遇,陶瑛.玻璃表面处理技术[M].北京:化学工业出版社,2004:33-42.
    [22]胡赓祥,蔡珣.材料科学基础[M].上海:上海交通大学出版社,2005:37-39.
    [23]杨建广,唐谟堂等.锑掺杂二氧化锡(ATO)导电机理及制备方法研究现状[J].材料导报,2004,18:17-20.
    [24]D.Sumangala Devi Amma, V.K.Vaidyan, et.al. Structural, electrical and optical studies on chemically deposited tin oxide films from inorganic precursors[J]. Materials Chemistry and Physics,2005. 93(1):194-201.
    [25]C.Morales, H.Juarez, T.Diaz, et.al. Low temperature SnO2 films deposited by APCVD[J]. Microelectronics Journal,2008,39(3-4):586-588.
    [26]Liujiang Xi, Dong Qian. High surface area SnO2 nanoparticles:Synthesis and gas sensing properties[J]. Materials Chemistry and Physics,2008,108(2-3):232-236.
    [27]E.Elangovan, K.Ramesh, K.Ramamurthi. Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature[J]. Solid State Communications,2004, 130(8):523-527.
    [28]K.Ravichandran, P.Philominathan. Fabrication of antimony doped tin oxide (ATO) films by an inexpensive, simplified spray technique using perfume atomizer[J]. Materials Letters,2008, 62(17-18): 2980-2983.
    [29]M.Seo, Y.Akutsu, H.Kagemoto. Preparation and properties of Sb-doped SnO2/metal substrates by sol-gel and dip coating[J]. Ceramics International,2007,33(4):625-629.
    [30]徐慢,袁启华,徐建梅.制备Sn02薄膜时原料中水对其成膜和光电性质的影响[J].功能材料,1995,26(6):502-504.
    [31]王乐成,杨民举.Sn02结构[J].太阳能学报,1985,6(4):359-365.
    [32]M.Adnane, H.Cachet, G.Folcher, S.Hamzaoui. Beneficial effects of hydrogen peroxide on growth, structural and electrical properties of sprayed fluorine-doped SnO2 films[J]. Thin Solid Films,2005, 492(1-2):240-247.
    [33]张建荣,高濂,顾达.络合法合成掺杂SnO2 (ATO)纳米粉[J].无机材料学报,2003,18(4):923-928.
    [34]周光辉.喷镀热解制备SnO2:F透明导电热反射膜[J].红外技术,1991,13(4):37-40.
    [35]T.R.GIRALDI, M.T.ESCOTE, et.al. Effect of Thickness on the Electrical and Optical Properties of Sb Doped SnO2(ATO) Thin Films[J]. Journal of Electroceramics,2004,13(5):159-165.
    [36]L.K.Dua, A.Del, S.Chakraborty, P.K.Biswas. Study of spin coated high antimony content Sn-Sb oxide films on silica glass[J]. Material Characterization,2008,59(5):578-586.
    [37]张仿清,王会生等.掺锑Sn02膜XPS和AES分析[J].太阳能学报,1988,9(2):190-195.
    [38]何云.高导电性掺氟二氧化锡FTO纳米材料的制备[D].武汉:华中师范大学,2006:38-40.
    [39]贾晓林,谭伟等.溶胶—凝胶法制备FTO透明导电膜[J].半导体技术,2000,25(6):42-44.
    [40]Clemente Luyo, Ismael Fabregas, L.Reyes. SnO2 thin-films prepared by a spray-gel pyrolysis: Influence of sol properties on film morphologies[J]. Thin Solid Films,2007,516(1):25-33.
    [41]包学诚.椭偏仪的结构原理与发展[J].现代科学仪器,1999,3:58-61.
    [42]余平,张晋敏.椭偏仪的原理和应用[J].合肥学院学报(自然科学版),2007,17(1):87-90.
    [43]施卫,李琦.超声喷雾法制备SnO2:F薄膜及其性能研究[J].西安理工大学学报,1998,14(1):48-53.
    [44]张聚宝,候春,温文剑等.喷雾热解法制备SnO2:Sb透明导电薄膜[J].硅酸盐学报,2003,31(11):1063-1068.
    [45]史金涛.溶胶凝胶法Sb掺杂Sn02薄膜的制备性能及新型节能镀膜玻璃的研究[D].杭州:浙江大学,2002:34-35.
    [46]赵岚.Sb掺杂Sn02薄膜的溶胶-凝胶法制备及性能研究[D].武汉:华中科技大学,2004:32-33.
    [47]冯金城.有机化合物结构分析与鉴定[M].北京:国防工业出版社,2003:19-42.
    [48]陈洁,宋启泽.有机波谱分析[M].北京:北京理工大学出版社,2006:55-69.
    [49]吴春春,杨辉,陆文伟.sol-gel法制备ATO透明导电薄膜[J].电子元件与材料,2006,24(3):44-46.
    [50]Songwang Yang, Lian Gao. Facile and Surfactant-Free Route to Nanocrystalline Mesoporous Tin Oxide[J]. J.Am.Ceram. Soc,2006,89(5):1742-1744.
    [51]E.Horvath, J.Kristof, R.L.Frost, N.Heider and V.Vagvolgyi. Investigation of IrO2/SnO2 thin film evolution by thermoanalytical and spectroscopic methods[J]. Journal of Thermal Analysis and Calorimetry, 2004,78:687-695.
    [52]张聚宝,翁文剑,杜不一.喷雾热分解法玻璃镀膜[J].玻璃与搪瓷,2002,30(2):46-50.
    [53]马瑾,郝晓涛,马洪磊.有机衬底Sn02:Sb透明导电膜的研究[J].半导体学报,2002,23(6):599-603.
    [54]黄水平,王利.在线Low-E玻璃光学特性机理及其功能层光学常数的确定[J].光学仪器,2006,28(4):129-132.
    [55]B.Thangaraju. Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped SnO2 thin films from SnCl2 precursor[J]. Thin Solid Films,2002,402(1-2):71-78.
    [56]杜刚.ATO导电薄膜的溶胶凝胶法制备及机理研究[D].武汉:华中科技大学,2005:45.
    [57]张建荣,顾达,杨云霞.Sb掺杂SnO2纳米粉体的结晶行为和电学性能[J].应用化学,2002,6:553-554.
    [58]W.Spence, The uv Absorption Edge of Tin Oxide Thin Films[J]. Journal of Applied Physics,1967, 38:3767-3770.
    [59]陈国平.薄膜物理与技术[M].南京:东南大学出版社,1993:118-128.
    [60]朱涛.氟锑掺杂氧化锡低辐射涂层玻璃的制备与性能研究[D].西安:西安理工大学,2008:25-26.
    [61]Dan Qin, Peng Yan, Guangzhong Li. Juan Xing, Yukuan An. Self-construction of SnO2 cubes based onaggration of nanorods[J]. Materials Letters,2008,62(16):2411-2414.
    [62]R.Y.Korotkov, R.Gupta, P.Ricou, R.Smith, G.Silverman. Atmospheric plasma discharge chemical vapor deposition of SnOx thin films using various tin precursors[J]. Thin Solid Films,2008,516(15): 4720-4727.
    [63]Terrier C, Chatelon P, Berjoan R, et al. Sb-doped SnO2 transparent conducting oxide from the sol-gel dip-coating technique[J]. Thin Solid Films,1995,263(1):37-41.
    [64]薄占满.掺Sb二氧化锡半导体导电机理的实验探讨[J].无机材料学报,1990,5(4):324-329.
    [65]Li Lili, Mao Liming, Duan Xuechen. Solvothermal synthesis and characterization of Sb-doped SnO2 nanoparticles used as transparent conductive films[J]. Materials Research Bulletin,2006,41(3):541-546.
    [66]张君.预先镀Si02膜玻璃基片SnO2:Sb薄膜的溶胶凝胶法制备及表征[D].武汉:武汉理工大学,2005:45-47.
    [67]张克从.晶体生长[M].北京:科学出版社,1981:220-223.
    [68]马黎君,魏京花.掺杂与Sn02薄膜性能影响研究[J].北京建筑工程学院学报,2001,17(2):70-73.
    [69]E.Shanthi, V.Dutta, A.Banerjee, K.L.Chopra. Electriacal and optical properties of undoped and antimony-doped tin oxide films[J]. Journal of Applied Physics,1980,51:6243-6251.
    [70]方俊鑫,陆栋主编.固体物理学(下册)[M].上海:上海科技出版社,1980:97-101.

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